Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulate Transistors 2SB1424 SOT-89 TRANSISTOR (PNP) 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 600 1 mW (Tamb=25℃) 2 3. EMITTER Collector current -3 A ICM: Collector-base voltage -20 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-50µA, IE=0 -20 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA, IB=0 -20 V Emitter-base breakdown voltage V(BR)EBO IE=-50µA, IC=0 -6 V Collector cut-off current ICBO VCB=-20V, IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 µA DC current gain hFE(1) VCE=-2V, IC=-100mA VCE(sat) IC=-2A, IB=-100mA fT VCE=-2V, IC=-500mA, f=100MHz 240 MHz Cob VCB=-10V, IE=0, f=1MHz 35 pF Collector-emitter saturation voltage Transition frequency Collector output capacitance 120 390 -0.5 CLASSIFICATION OF hFE(1) Rank Range Marking Q R 120-270 180-390 AEQ AER V