ACT5101-1 High Voltage 3-Phase Brushless DC Motor Driver

Standard Products
ACT5101-1 Brushless DC Motor Drive
High Voltage 3-Phase
www.aeroflex.com/Power
March 29, 2006
FEATURES
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500VDC Rating
50Amp DC Rating
Package Size 3.0" x 2.1" x 0.39"
4 Quadrant Control
6 Step Trapezoidal Drive Capability
Military Processing Available
Isolated Upper and Lower Gate Drivers
Temperature Range -55°C TO +125°C
Designed for commercial, industrial and aerospace applications
Aeroflex-Plainview is a Class H & K MIL-PRF-38534 manufacturer
DESCRIPTION
The Aeroflex-Plainview ACT5101-1 is a high voltage 3 phase brushless DC motor drive that combines a 500VDC,
50A high power output stage along with a low power digital input and gate drive stages. A digital lock-out feature
protects the output stage from accidental cross-conduction thus preventing shoot-through conditions. The
ACT5101-1 also includes a floating gate drive design for each upper and lower transistor. On-board gate drive
supplies provide a continuous floating voltage for each upper and lower transistor, even during a motor stall.
The high power output stage rated at 500VDC, 50A is capable of delivering over 25KW to the load. This is
accomplished through the use of high power IGBTs with ultra-fast recovery rectifiers in parallel.
The ACT5101-1 utilizes power hybrid technology to provide the highest levels of reliability and lightest weight
while requiring the smallest amount of board space. The ACT5101-1 is available with military processing and
operates over the -55 to +125°C temperature range.
This makes the ACT5101-1 ideal for all military, space, and commercial avionics applications. These include
electro-hydrostatic actuators (EHA's) and electro-mechanical actuators (EMA's) for flight surface control, missile
fin actuators, thrust vector control, electric brakes, fuel and cooling pumps. Additional applications include
environmental conditioning blowers, radar positioning, solar panel positioning, and cryogenic cooler pumps. The
ACT5101-1 is therefore especially suitable for use in applications for all military tank upgrades, helicopters, planes
and new commercial avionics using 270VDC as the main power.
SCD5101-1 Rev M
VCC
Isolation
VCC
DC / AC
Converter
Phase V+
SD
Isolation
VCC
XFMR
&
Rect
Ux
Phase OUT
VCC
500V
Optical
Isolation
Isolation
XFMR
&
Rect
Lx
Phase RTN
To Other Sections
FIGURE 1 – BLOCK DIAGRAM
SCD5101-1 Rev M 329/06
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2
TABLE I – ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RANGE
UNITS
V+A, V+B, V+C
500 Max 1/
VDC
Input Supply Voltage (Pin 12)
VCC
+18 Max
VDC
Output Current (Refer to Figure 2)
Continuous
Pulsed
lOF
lOFP
50 Max 1/
90 Max 2/
A
A
Junction-Case Thermal Resistance (IGBT) each transistor
θJCIGBT
.45 Max
°C/W
Junction-Case Thermal Resistance (DIODE) each Diode
θJCDIODE
.85 Max
°C/W
TS
250 Max
°C
Junction Temperature Range
TJ
-55 to 150
°C
Case Operating Temperature
TC
-55 to 125
°C
Case Storage Temperature Range
TCS
-55 to 150
°C
Output Supply Voltage (Pins 3,7,11)
Maximum Lead Soldering Temp
3/
Notes:
1/ Tc = +25°C.
2/ Pulse Width < 10ms, Duty Cycle < 10%. Guaranteed, not tested.
3/ Solder 1/8" from case for 5 seconds maximum.
TABLE II – NORMAL OPERATING CONDITIONS
TC = +25°C unless otherwise specified
SYMBOL
TEST
CONDITIONS
MIN
Input Supply Current
lS
Vcc = +15V
-
100
115
mA
Input Supply Voltage
VCC
-
14.25
15
15.75
VDC
Input Voltage Low
VINL
-
-
4
VDC
Input Voltage High
VINH
11.0
-
-
VDC
Input Current Low
IINH
NOTE:
Internally pulled
up to
Vcc = +15V
-
-
3.75
mA
lOF
-
-
-
50
A
V+ A,V+ B,V+ C
-
15
270
500
VDC
VDROPF 3/
lOF = 40A
-
2.2
2.5
VDC
VDROPF
lOF = 6.5A
-
-
1.85
VDC
VDROPR 1/ 3/
lOR = 40A
-
1.3
1.6
VDC
VDROPR 1/ 3/
lOR = 6.5A
-
-
1.0
VDC
tRR
-
-
-
35
nsec
lR25
lR125
V+ = 500V
V+ = 480V
-
-
500
8.0
µA
mA
PARAMETERS
TYP MAX
UNIT
INPUT STAGE
POWER OUTPUT STAGE
Output Current Continuous (Refer to Figure 2) 3/
Output Supply Voltage
Output Voltage Drop (Each IGBT)
NOTE: VDROPF = VPHASE V+ - VPHASE Out
or
VDROPF = VPHASE Out - VPHASE RTN
Instantaneous Forward Voltage (Flyback Diode)
NOTE: VDROPR = VPHASE Out - VPHASE V+
or
VDROPR = VPHASE RTN - VPHASE Out
Reverse Recovery Time (Flyback Diode)
Reverse Leakage Current (VIN High)
Tc = 25°C 3/
Tc = 125°C 1/ 3/ 4/
3/
SCD5101-1 Rev M 329/06
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TABLE II – NORMAL OPERATING CONDITIONS (con’t)
TC = +25°C unless otherwise specified
SYMBOL
TEST
CONDITIONS
MIN
VISO
-
500
-
-
V
Turn-on propagation delay
td (on)
-
-
-
700
nsec
Turn-off propagation delay
td (off)
-
-
-
2
µsec
tSDU
-
-
-
3.5
µsec
Turn-on Transition Time
tr
-
-
-
250
nsec
Turn-off Transition Time
tf
-
-
-
250
nsec
Turn-on propagation delay
td (on)
-
-
-
700
nsec
Turn-off propagation delay
td (off)
-
-
-
2
µsec
tSDL
-
-
-
3.5
µsec
Turn-on Transition Time
tr
-
-
-
250
nsec
Turn-off Transition Time
tf
-
-
-
250
nsec
Turn-on Energy
Eon
TC = +125°C
-
-
0.5
mJ
Turn-off Energy
Eoff
-
-
3.0
mJ
500
-
-
nsec
PARAMETERS
TYP MAX
UNIT
ISOLATION CHARACTERISTICS
Isolation Voltage
SWITCHING CHARACTERISTICS 2/
UPPER DRIVE (See Figure 3 – Timing Diagram):
Shut-down propagation delay
LOWER DRIVE (See Figure 3 – Timing Diagram):
2/
Shut-down propagation delay
SWITCHING ENERGY LOSSES (At IOF = 40A, V = 270V) 3/
DEAD TIME (See Digital Input Stage Description herein)
tdt
-
Notes:
1/ Pulse width ≤ 300usec duty cycle ≤2%.
2/ Tested @ 6.5Amps.
3/ Guaranteed, not tested.
4/ Not to exceed TJ of +150°C. See Mechanical Applications for Case Interface Temperature Description herein.
SCD5101-1 Rev M 329/06
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DIGITAL INPUT STAGE
The ACT5101-1 offers complete flexibility by allowing the user to turn on/off each of the 6 IGBTs in any order or
combination desired which enables the hybrid to be commutated in a 6 step trapezoidal mode. The only unacceptable
combination would be to turn on an upper and lower transistor of the same phase. This is not a desirable condition for
normal operation and is therefore not allowed. The ACT5101-1 has a digital lockout feature that prevents turn-on of
two in-line transistors. Damage to one or both of the transistors would occur if this protection circuitry was not present
in the hybrid. As a safety precaution, it is still recommended that a 500nsec dead time be installed between commands
at the inputs of the upper and lower transistors of the same phase. This will compensate for any lag in transistor turn-off
due to the inductive load.
The SD input allows the user to enable/disable the drive stage of the ACT5101-1 on demand. This input can be
incorporated into the user's temperature or current monitoring circuitry to shutdown the hybrid if excessive current or
case temperatures are sensed.
The digital input circuits are of the Schmitt trigger type with hysteresis, thus greatly enhancing the input noise
immunity. The inputs are internally pulled up to 15 volts so that an uncommitted input is sensed as "OFF", providing a
measure of protection against an accidental input disconnect.
GATE DRIVE
The ACT5101-1 includes a gate drive supply which provides a floating voltage for each upper and lower transistor.
This constant voltage allows the motor to be operated at very low duty cycles or driven into a stall without any loss of
upper or lower gate drive. This performance could not be obtained with only a conventional boot strap design.
POWER OUTPUT STAGE
IGBTs (insulated gate bipolar transistors) are technically similar to bipolars and MOSFETS. An IGBT is a composite
of a transistor with an N-channel MOSFET connected to the base of a PNP transistor. Like the MOSFET, it offers high
input impedance and requires low input drive current. IGBT conduction losses are low, as with bipolar technology, and
IGBT voltage drops are much lower compared with those of MOSFETs. Consequently, the IGBT offers a high current
density. With a smaller die size than the MOSFET, it can handle the same current rating. Unlike MOSFETS, IGBTs
have no intrinsic body diode. The ACT5101-1 includes 35nsec fast recovery rectifiers in parallel across each of the 6
IGBTs to carry the reverse current when the IGBT is turned off.
It is important for the user to observe the Absolute Maximum ratings of the ACT5101-1 so that the voltage and current
rating is not exceeded. If over-voltage/over-current protection is desired it must be implemented external to the
ACT5101-1. Figure 2 shows the ACT5101-1 output current capability vs. case temperature.
Motor Running
Total Motor Current IO (A)
120
100
80
Motor Running,
PWM = 10KHz
60
Motor Running,
PWM = 20KHz
40
20
0
0
20
40
60
80
100
120
140
Case Temperature TC (°C)
FIGURE 2A - OUTPUT CURRENT vs CASE TEMPERATURE – MOTOR RUNNING
SCD5101-1 Rev M 329/06
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5
Locked Rotor
80
Phase Current IO (A)
70
60
50
Locked Rotor,
PWM = 20KHz
40
Locked Rotor,
PWM = 10KHz
30
20
10
0
0
20
40
60
80
100
120
140
Case Temperature TC (°C)
FIGURE 2B - OUTPUT CURRENT vs CASE TEMPERATURE – LOCKED ROTOR
Locked Rotor, No PWM
100
90
Phase Current IO (A)
80
70
60
Locked Rotor,
No PWM (DC)
50
40
30
20
10
0
0
20
40
60
80
100
120
140
Case Temperature TC (°C)
FIGURE 2C - OUTPUT CURRENT vs CASE TEMPERATURE – LOCKED ROTOR, NO PWM
SCD5101-1 Rev M 329/06
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MECHANICAL
The ACT5101-1 construction utilizes only the highest quality materials and manufacturing available to ensure a high
reliability, robust power hybrid design. The case is selected for best thermal conductivity, hermeticity, and
voltage/current carrying capability. The case is electrically isolated from the circuit and can withstand 1500VAC from
pin to case, therefore no insulating pads or washers are required for mounting.
In order to remove the heat being generated from the ACT5101-1, it must be bolted down to the motor, a heat sink or
the actual system chassis such as a missile structure or aircraft wing rib for example. Thermally conductive grease or a
"Sil-pad" is recommended between the hybrid case baseplate and its mounting surface to fill in any surface
imperfections and improve the heat transfer from case-to-heat sink. It is important to keep the temperature at this
interface no greater than +125°C in order to maintain safe semi-conductor junction temperatures.
The leads of the ACT5101-1 can be formed upward, away from the baseplate, so that a PC board can be mounted
directly above it. A wiring harness can also be hand-wired and soldered directly to the leads of the ACT5101-1 if this is
preferred.
TABLE III – INPUT / OUTPUT TRUTH TABLE
INPUTS
OUTPUTS
UA
UB
UC
LA
LB
LC
SD
PHASE A
PHASE B
PHASE C
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
1
1
1
0
0
0
0
0
0
1
1
1
1
1
1
0
0
0
0
0
0
1
1
1
0
0
0
1
1
1
0
0
0
1
1
1
1
0
0
1
0
0
0
0
0
1
1
1
1
1
0
1
1
0
0
1
0
1
1
1
1
1
0
1
0
0
0
0
0
1
0
1
1
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Z
L
L
Z
L
L
L
L
L
H
H
H
H
H
Z
H
H
Z
L
Z
L
H
H
H
H
H
Z
Z
L
L
L
L
L
H
Z
H
H
H
H
L
Z
L
H
Z
H
L
Z
L
H
Z
H
L
L
L
1
1
0
1
1
0
1
1
0
1
0
1
1
0
1
1
0
1
0
0
0
Z
L
H
Z
L
H
Z
L
H
X
X
X
X
X
X
1
Z
Z
Z
H=high level, L=low level, X=irrelevant, Z=high impedance (off)
SCD5101-1 Rev M 329/06
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7
Ux INPUTS
50%
50%
Lx INPUTS
td on
td off
td off
td on
90%
PHASE
OUTPUTS 50%
10%
tr
tf
tr
tf
50%
SD
tSDU
H
PHASE
OUTPUTS
Z
tSDL
UPPER TRANSISTOR
BEING SHUTDOWN
LOWER TRANSISTOR
BEING SHUTDOWN
Z
L
FIGURE 3 – TIMING DIAGRAM
SCD5101-1 Rev M 329/06
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8
TABLE IV – FUNCTION vs PIN NUMBERS / DESCRIPTION
FUNCTION
PIN #
DESCRIPTION
V+ A
11
High Voltage D.C. Bus, Phase A
V+ B
7
High Voltage D.C. Bus, Phase B
V+ C
3
High Voltage D.C. Bus, Phase C
VCC
12
+15VDC input required to power gate drive supply and gate drive
circuitry of all three phases.
GND
19,22,26
RTN A
8
Return for High Voltage Bus, Phase A.
RTN B
5
Return for High Voltage Bus, Phase B
RTN C
1
Return for High Voltage Bus, Phase C
PHASE A
9
Output to motor winding Phase A
PHASE B
6
Output to motor winding Phase B
PHASE C
2
Output to motor winding Phase C
UA
18
Digital input to Phase A upper transistor
LA
17
Digital input to Phase A lower transistor
UB
21
Digital input to Phase B upper transistor
LB
20
Digital input to Phase B lower transistor
UC
25
Digital input to Phase C upper transistor
LC
24
Digital input to Phase C lower transistor
SD
23
Digital shut-down input to enable / disable all six gate drives
N/C
4,10,13-16
Reference for LOGIC supply, +15V supply, and digital inputs.
No connection Internally
TABLE V – PIN NUMBERS vs FUNCTION
PIN #
FUNCTION
PIN #
FUNCTION
1
RTN C
26
GND
2
PHASE C
25
UC
3
V+ C
24
LC
4
N/C
23
SD
5
RTN 4B
22
GND
6
PHASE B
21
UB
7
V+ B
20
LB
8
RTN A
19
GND
9
PHASE A
18
UA
10
N/C
17
LA
11
V+ A
16
N/C
12
VCC
15
N/C
13
N/C
14
N/C
SCD5101-1 Rev M 329/06
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9
POWER PACKAGE OUTLINE
Chamfer
.035-.065 X 45°
4X .128 -.005,+.002 THRU
26
1
3.000
2.750
See note 3
12X .200
13
14
.300
.120
.125
1.860
.250
1.600
2.100
2.010
26X
.048 - .052
.057
±.020
.003IN/IN
.050
.54-.58
.330
.003IN/IN
.165
R .110
Notes:
1. Package contains BeO substrate.
2. Dimensions Tolerance: ±.005, unless otherwise noted.
3. Pin Tolerance: non-cumulative
SCD5101-1 Rev M 329/06
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10
ORDERING INFORMATION
MODEL NUMBER
SCREENING
ACT5101-1
Operating Temperature Range -55°C to +125°C.
Screened to the individual test methods of MIL-STD-883.
Class H DSCC QML Pending.
ACT5101-1-7
Commercial Flow, 25°C testing only
PLAINVIEW, NEW YORK
Toll Free: 800-THE-1553
Fax: 516-694-6715
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Tel: 805-778-9229
Fax: 805-778-1980
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Tel: 603-888-3975
Fax: 603-888-4585
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Tel: 321-951-4164
Fax: 321-951-4254
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Tel: 949-362-2260
Fax: 949-362-2266
CENTRAL
Tel: 719-594-8017
Fax: 719-594-8468
www.aeroflex.com
info-ams@aeroflex.com
Aeroflex Microelectronic Solutions reserves the right to
change at any time without notice the specifications, design,
function, or form of its products described herein. All
parameters must be validated for each customer's application
by engineering. No liability is assumed as a result of use of
this product. No patent licenses are implied.
Our passion for performance is defined by three
attributes represented by these three icons:
solution-minded, performance-driven and customer-focused
SCD5101-1 Rev M 329/06
11