2SA1862 Transistors High-voltage Switching Transistor (−400V, −2A) 2SA1862 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage. (BVCEO = −400V) 2) Low saturation voltage. (Max. VCE (sat) = −0.5V at IC / IB = −500mA / −100mA) 3) High switching speed, typically tf = 0.4µs at IC = −1A. 4) Wide SOA (safe operating area). CPT3 6.5 5.1 2.3 Symbol 0.65 Collector-base voltage Collector-emitter voltage VCBO VCEO −400 −400 V V Emitter-base voltage VEBO −7 −2 −4 V A (DC) A (Pulse) 1 W W (Tc=25°C) Collector current IC Collector power dissipation PC Junction temperature Tj 10 150 Storage temperature Tstg −55 to +150 0.9 Unit Limits (1)Base (Gate) (2)Collector (Drain) (3)Emitter (Source) (1) 2.3 (2) (3) 2.3 9.5 0.8Min. 0.75 zAbsolute maximum ratings (Ta=25°C) Parameter 2.5 0.9 1.5 5.5 1.5 0.5 0.5 1.0 Abbreviated symbol : A1862 ∗ °C °C ∗ Single pulse, Pw=10ms zPackaging specifications and hFE Type 2SA1862 Package hFE CPT3 P Code Basic ordering unit (pieces) TL 2500 zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage BVCBO BVCEO −400 −400 − − Emitter-base breakdown voltage Collector cutoff current BVEBO −7 − − − − − − −10 V V V − − − −10 − −0.5 µA V −1.2 180 − V − MHz − pF ICBO Emitter cutoff current Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) IEBO µA Conditions IC= −50µA IC= −1mA IE= −50µA VCB= −400V VEB= −5V IC/IB= −0.5A/ −0.1A fT − 82 − Cob − − − 18 30 Turn-on time ton − 0.2 − µs Storage time Fall time tstg − 1.8 − µs IC=−1A, RL=150Ω IB1=−IB2= −0.2A tf − 0.4 − µs VCC DC current transfer ratio Transition frequency Output capacitance hFE IC/IB= −0.5A/ −0.1A VCE= −5V, IC= −0.1A VCB= −10V, IE=0.1A, f=5MHz VCE= −10V, IE=0A, f=1MHz −150V Rev.B 1/2 2SA1862 Transistors −0.4 −3.5mA −3.0mA −0.3 −2.5mA −2.0mA −0.2 −1.5mA −1.0mA −0.1 IB= −0.5mA 0 0 −2 −4 −6 −8 −10 −5 −2 −1 −0.5 −0.2 −0.1 −0.05 −0.02 −0.01 −0.005 −0.002 −0.001 0 −10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) −10 Ta=25°C −5 IC/IB=5 −2 −1 −0.5 VBE(sat) −0.2 −0.1 −0.05 VCE(sat) −0.02 −0.01 −0.001 −0.002 −0.005 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −2 −1 −0.5 100ms∗ −0.2 −0.1 −0.05 −0.02 −0.01 −1 Tc=25°C ∗Single nonrepetitive pulse −2 −5 −10 −20 −50 −100 −200 −500 −1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Safe operating area 50 20 10 5 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 1 −0.001 −0.002 −0.005 −0.01 −0.02 −0.05 −0.1 −0.2 -1.4 −0.5 −1 −2 −5 −10 Fig.2 Grounded emitter propagation characteristics Fig.3 DC current gain vs. collector current 1000 500 Ta=25°C VCE= −10V 200 100 50 20 10 5 2 1 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 Fig.5 Gain bandwidth product vs. emitter current 10000 10000 5000 Ta=25°C f=1MHz IE=0A 2000 1000 500 Cib 200 100 Cob 50 20 10 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) EMITTER CURRENT : IE (A) TRANSIENT THERMAL RESISTENCE : Rth (°C/W) Pw=10ms∗ DC COLLECTOR CURRENT : IC (A) IC Max.(Pulse)∗ 100 2 COLLECTOR CURRENT : IC (A) −10 −5 200 COLLECTOR CURRENT : IC (A) −5 −10 Fig.4 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage vs. collector current Ta=25°C VCE= −5V BASE TO EMITTER VOLTAGE : VBE (V) TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SAURATION VLTAGE : VBE(sat) (V) Fig.1 Ground emitter output characteristics 1000 500 Ta=25°C VCE= −5V DC CURRENT GAIN : hEF −5.0mA −4.5mA −4.0mA Ta=25°C COLLECTOR OUTPUT SATURATION : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR CURRENT : IC (A) −0.5 COLLECTOR CURRENT : IC (mA) zElectrical characteristic curves Fig.6 Collector output capacitance vs. collector-bass voltage Emitter input capacitance vs. emitter-base voltage (1)Using infinite heat sink (2)Unmounted 1000 (2) 100 (1) 10 1 0.1 0.01 0.001 0.01 0.1 1 10 100 1000 TIME : t (s) Fig.8 Transient thermal resistance Rev.B 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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