A Business Partner of Renesas Electronics Corporation. Data Sheet NE3520S03 R09DS0029EJ0100 Rev.1.00 Oct 18, 2011 N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain FEATURES • Low noise figure and high associated gain: NF = 0.65 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz, VDS = 2 V, ID = 10 mA • K band Micro-X plastic (S03) package APPLICATIONS • 20 GHz band DBS LNB • Other K band communication system ORDERING INFORMATION Part Number NE3520S03-T1C Order Number NE3520S03-T1C-A NE3520S03-T1D NE3520S03-T1D-A Package S03 package (Pb-Free) Quantity 2 kpcs/reel Marking J Supplying Form • Embossed tape 8 mm wide • Pin 4 (Gate) face the perforation side of the tape 10 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: NE3520S03-A ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4.0 V Gate to Source Voltage VGS –3.0 V ID IDSS mA IG 100 μA Ptot 165 mW Tch +125 °C Drain Current Gate Current Total Power Dissipation Note Channel Temperature Storage Temperature Tstg –65 to +125 Note: Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB °C CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. R09DS0029EJ0100 Rev.1.00 Oct 18, 2011 Page 1 of 8 NE3520S03 RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified) Parameter Symbol MIN. TYP. MAX. Unit VDS +1 +2 +3 V Drain Current ID 5 10 15 mA Input Power Pin – – 0 dBm Drain to Source Voltage ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) MIN. TYP. MAX. Unit Gate to Source Leak Current Parameter IGSO VGS = –3.0 V – 0.5 10 μA Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 25 40 70 mA Gate to Source Cut-off Voltage Symbol Test Conditions VGS (off) VDS = 2 V, ID = 100 μA –0.2 –0.7 –1.3 V Transconductance gm VDS = 2 V, ID = 10 mA 50 65 – mS Noise Figure NF VDS = 2 V, ID = 10 mA, f = 20 GHz – 0.65 0.90 dB Associated Gain Ga 11.5 13.5 – dB R09DS0029EJ0100 Rev.1.00 Oct 18, 2011 Page 2 of 8 NE3520S03 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation Ptot (mW) 250 Mounted on Glass Epoxy PCB (1.08 cm2 × 1.0 mm (t) ) 200 150 100 50 0 50 100 150 200 250 Ambient Temperature TA (°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 80 80 70 70 60 60 VGS = 0 V 40 –0.1 V 30 –0.2 V 20 –0.3 V 10 –0.4 V –0.5 V 1.0 2.0 40 30 20 10 3.0 0 –0.8 4.0 –0.6 –0.4 –0.2 0 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT 20 1.1 VDS = 2 V ID = 10 mA 19 1.0 18 0.9 17 0.8 16 0.7 15 0.6 14 Ga 13 0.5 12 0.4 0.3 0.2 10 NFmin 11 15 20 25 16 1.5 10 Frequency f (GHz) Minimum Noise Figure NFmin (dB) 1.2 Minimum Noise Figure NFmin (dB) 50 1.4 f = 20 GHz VDS = 2 V 15 1.3 14 Ga 1.2 13 1.1 12 1.0 11 0.9 0.8 10 NFmin 9 0.7 8 0.6 7 0.5 0 5 10 15 20 Associated Gain Ga (dB) 0 0.0 Drain Current ID (mA) 50 Associated Gain Ga (dB) Drain Current ID (mA) VDS = 2 V 6 25 Drain Current ID (mA) Remark The graphs indicate nominal characteristics. R09DS0029EJ0100 Rev.1.00 Oct 18, 2011 Page 3 of 8 NE3520S03 S-PARAMETERS S-parameters/Noise-parameters are provided on our web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www2.renesas.com/microwave/ R09DS0029EJ0100 Rev.1.00 Oct 18, 2011 Page 4 of 8 NE3520S03 RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm) 2.80 2.60 2.06 0.64 Reference Plane (Calibration Plane) 13.0 0.54 0.74 1.60 2.2 S–S2.2mm 1.7 1.7 Reference Plane (Calibration Plane) φ 0.3 TH 6.0 RT/duroid 5880/ROGERS t = 0.254 mm εr = 2.20 tan delta = 0.0009 @10 GHz Au-flash plate R09DS0029EJ0100 Rev.1.00 Oct 18, 2011 Page 5 of 8 NE3520S03 PACKAGE DIMENSIONS S03 (UNIT: mm) (Top View) (Bottom View) 3.2±0.2 0.65 TYP. 2.2±0.2 1 2.2±0.2 0.5 TYP. 2.6±0.1 1 J 2 4 4 2 3 3 (Side View) 2.2±0.2 0.15±0.05 1.5 MAX. 1.7 3.2±0.2 PIN CONNECTIONS 1. 2. 3. 4. R09DS0029EJ0100 Rev.1.00 Oct 18, 2011 Source Drain Source Gate Page 6 of 8 NE3520S03 RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Partial Heating Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2% (Wt.) or below Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below Condition Symbol IR260 HS350 CAUTION Do not use different soldering methods together (except for partial heating). R09DS0029EJ0100 Rev.1.00 Oct 18, 2011 Page 7 of 8 NE3520S03 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. R09DS0029EJ0100 Rev.1.00 Oct 18, 2011 Page 8 of 8 Revision History Rev. 1.00 Date Oct 18, 2011 NE3520S03 Data Sheet Description Summary Page - First edition issued All trademarks and registered trademarks are the property of their respective owners. C-1 NOTICE 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does not warrant that such information is error free. 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