A Business Partner of Renesas Electronics Corporation. NESG7030M04 Data Sheet R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 NPN Silicon Germanium Carbon RF Transistor FEATURES OUTLINE IN U ED • The device is an ideal choice for low noise, high gain amplification. NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz Ga = 14 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz • PO (1 dB) = 4.5 dBm TYP. @ VCE = 2 V, IC (set) = 10 mA, f = 2 GHz • Maximum stable power gain: MSG =16.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 5.8 GHz • SiGe: C HBT technology • This product is improvement of ESD. • Flat-lead 4-pin thin-type super minimold (M04 PKG) RENESAS Package code : M04 (Package name : Flat-lead 4-pin thin-type super minimold (M04 PKG)) 4 NT 3 1 2 1. 2. 3. 4. SC O Note : Marking is "T1R." Emitter Collector Emitter Base ORDERING INFORMATION Part Number NESG7030M04 Order Number NESG7030M04-A NESG7030M04-T2 NESG7030M04-T2B NESG7030M04-T2-A NESG7030M04-T2B-A Package Flat-lead 4-pin thintype super minimold (M04 PKG) (Pb-Free) Quantity 50 pcs (Non reel) 3 kpcs/reel 15kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 1(Emitter), Pin 2 (Collector) face the perforation side of the tape DI Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 Page 1 of 9 A Business Partner of Renesas Electronics Corporation. NESG7030M04 ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Symbol VCBO VCEO IB Note1 IC Ptot Note2 Tj Tstg Ratings 10 4.3 2 30 125 150 −65 to +150 Notes: 1. Depend on the ESD protect device. 2 2. Mounted on 1.08 cm ×1.0 mm (t) glass epoxy PWB ELECTRICAL CHARACTERISTICS (TA = +25°C) Symbol ICBO Emitter Cut-off Current DC Current Gain RF Characteristics Reverse Transfer Capacitance Insertion Power Gain Maximum Stable Power Gain Noise Figure (1) IEBO hFE Note 1 VCB = 4.3 V, IE = 0 Associated Gain (1) Ga1 Noise Figure (2) NF2 Associated Gain (2) Ga2 PO (1 dB) TYP. MAX. Unit − − 100 − 320 100 500 nA − 200 VCB = 2 V, IE = 0, f = 1 MHz VCE = 2 V, IC = 15 mA, f = 5.8 GHz VCE = 2 V, IC = 15 mA, f = 5.8 GHz − 11.0 − 50 13.0 16.5 80 − − fF dB dB VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 5 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 5 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC (set) = 10 mA, f = 2 GHz, ZS = ZSopt, ZL = ZLopt SC O Gain 1 dB Compression Output Power MIN. VEB = 0.4 V, IC = 0 VCE = 2 V, IC = 5 mA NT Cre Note 2 ⏐S21e⏐2 MSG Note 3 NF1 Test Conditions IN U Parameter DC Characteristics Collector Cut-off Current Unit V V mA mA mW °C °C ED Parameter Collector to Base Voltage Collector to Emitter Voltage Base Current Collector Current Total Power Dissipation Junction Temperature Storage Temperature nA − − 0. 5 − dB − 21.0 − dB − 0.75 1.15 dB 12.0 14.0 − dB − 4.5 − dBm Notes: 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded. S21 3. MSG = S12 hFE CLASSIFICATION YFB Marking T1R hFE Value 200 to 500 DI Rank R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 Page 2 of 9 A Business Partner of Renesas Electronics Corporation. NESG7030M04 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Mounted on Glass Eploxy PWB (1.08 cm2 × 1.0 mm (t) ) 200 150 125 100 50 0 0 25 50 75 100 125 150 Ambient Temperature TA (°C) 0.6 50 40 30 20 10 0 0 0.8 1 2 3 4 5 IN U Collector Current IC (mA) 1 0.0001 0.4 60 15 10 0.001 70 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE VCE = 2.0 V 0.01 80 Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 0.1 f = 1 MHz 90 1.0 16 μA 5 0 0 12 μA 8 μA IB = 4 μA 1 2 3 4 5 Collector to Emitter Voltage VCE (V) SC O Base to Emitter Voltage VBE (V) 40 μA 36 μA 32 μA 28 μA 24 μA 20 μA 10 NT Collector Current IC (mA) 100 100 ED Total Power Dissipation Ptot (mW) 250 Reverse Transfer Capacitance Cre (pF) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE VCE = 2.0 V 100 DI DC Current Gain hFE 1 000 DC CURRENT GAIN vs. COLLECTOR CURRENT 10 0.1 1 10 100 Collector Current IC (mA) Remark The graph indicates nominal characteristics. R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 Page 3 of 9 A Business Partner of Renesas Electronics Corporation. NESG7030M04 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 40 35 30 25 20 15 10 5 0 1 10 30 25 20 15 10 5 0 100 VCE = 2 V f = 2 GHz 35 1 Collector Current IC (mA) 25 20 15 10 5 1 10 100 MSG 25 MAG MSG |S21e|2 10 5 DI Insertion Power Gain |S21e|2 (dB) Maximum Available Gain MAG (dB) Maximum Stable Gain MSG (dB) 30 0.1 20 MAG MSG |S21e|2 15 10 5 0 0.1 1 10 100 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 35 0 MSG 25 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY VCE = 2 V IC = 5 mA 15 30 Frequency f (GHz) 40 20 VCE = 1 V IC = 5 mA 35 Collector Current IC (mA) SC O 0 40 1 10 100 Frequency f (GHz) 40 Insertion Power Gain |S21e|2 (dB) Maximum Available Gain MAG (dB) Maximum Stable Gain MSG (dB) 30 IN U VCE = 3 V f = 2 GHz 35 100 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY NT Gain Bandwidth Product fT (GHz) 40 10 Collector Current IC (mA) Insertion Power Gain |S21e|2 (dB) Maximum Available Gain MAG (dB) Maximum Stable Gain MSG (dB) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT ED VCE = 1 V f = 2 GHz Gain Bandwidth Product fT (GHz) Gain Bandwidth Product fT (GHz) 40 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT VCE = 3 V IC = 5 mA 35 30 MSG 25 20 MAG MSG |S21e|2 15 10 5 0 0.1 1 10 100 Frequency f (GHz) Remark The graph indicates nominal characteristics. R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 Page 4 of 9 A Business Partner of Renesas Electronics Corporation. NESG7030M04 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY MSG 30 MAG MSG 25 20 |S21e|2 15 MAG 10 5 0 0.1 1 10 100 35 MSG 30 20 |S21e|2 15 10 5 0 0.1 VCE = 3 V IC = 15 mA MSG 25 20 |S21e|2 15 10 5 0 0.1 1 100 IN U MAG 10 NT Insertion Power Gain |S21e|2 (dB) Maximum Available Gain MAG (dB) Maximum Stable Gain MSG (dB) MSG 30 1 Frequency f (GHz) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 35 MSG 25 Frequency f (GHz) 40 MAG VCE = 2 V IC = 15 mA ED 35 40 VCE = 1 V IC = 15 mA Insertion Power Gain |S21e|2 (dB) Maximum Available Gain MAG (dB) Maximum Stable Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Gain MAG (dB) Maximum Stable Gain MSG (dB) 40 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 10 100 SC O Frequency f (GHz) DI Remark The graph indicates nominal characteristics. R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 Page 5 of 9 A Business Partner of Renesas Electronics Corporation. MSG 25 MAG 20 15 |S21e|2 10 5 VCE = 1 V, f = 2 GHz 0 1 10 25 20 15 10 5 0 1 100 5 VCE = 2 V, f = 2 GHz 0 1 20 MAG 15 10 |S21e|2 10 5 25 20 15 |S21e|2 10 5 DI 0 1 VCE = 3 V, f = 2 GHz 10 100 Collector Current IC (mA) Insertion Power Gain |S21e|2 (dB) Maximum Available Gain MAG (dB) Maximum Stable Gain MSG (dB) SC O Insertion Power Gain |S21e|2 (dB) Maximum Available Gain MAG (dB) Maximum Stable Gain MSG (dB) MAG 10 100 Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT MSG VCE = 2 V, f = 5.8 GHz 0 1 100 Collector Current IC (mA) 30 100 IN U |S21e|2 Insertion Power Gain |S21e|2 (dB) Maximum Available Gain MAG (dB) 20 10 10 25 NT Insertion Power Gain |S21e|2 (dB) Maximum Available Gain MAG (dB) Maximum Stable Gain MSG (dB) MAG 25 15 VCE = 1 V, f = 5.8 GHz INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT MSG |S21e| Collector Current IC (mA) Collector Current IC (mA) 30 MAG ED 30 INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Gain MAG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Gain MAG (dB) Maximum Stable Gain MSG (dB) NESG7030M04 25 20 MSG MAG 15 10 |S21e|2 5 0 1 VCE = 3 V, f = 5.8 GHz 10 100 Collector Current IC (mA) Remark The graph indicates nominal characteristics. R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 Page 6 of 9 A Business Partner of Renesas Electronics Corporation. NESG7030M04 2 3 25 20 15 10 1 NF 5 10 100 Ga 2 9 1 3 0 0 1 –10 –35 40 10 30 Pout 20 IC –30 –25 OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER IN U 15 Output Power Pout (dBm) 5 50 Collector Current IC (mA) VCE = 2 V, IC (set) = 10 mA, f = 2 GHz –5 10 –20 0 100 10 Collector Current IC (mA) OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 0 6 NF –15 –10 0 Input Power Pin (dBm) 50 VCE = 2 V, IC (set) = 10 mA, f = 5.8 GHz 5 40 30 Pout 0 NT Output Power Pout (dBm) 10 15 12 Collector Current IC (mA) 15 18 –5 –10 –20 20 10 IC –15 –10 –5 –0 5 Collector Current IC (mA) 0 1 VCE = 2 V, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt Associated Gain Ga (dB) Ga 30 ED VCE = 2 V, f = 2 GHz, ZS = ZSopt, ZL = ZLopt Noise Figure NF (dB) Noise Figure NF (dB) 3 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT Associated Gain Ga (dB) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 0 Input Power Pin (dBm) DI SC O Remark The graph indicates nominal characteristics. R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 Page 7 of 9 A Business Partner of Renesas Electronics Corporation. NESG7030M04 S-PARAMETERS S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import to microwave circuit simulators without keyboard inputs. Click here to download S-parameters. [Products] → [RF Devices] → [Device Parameters] DI SC O NT IN U ED URL http://www.renesas.com/products/microwave/download/parameter/ R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 Page 8 of 9 A Business Partner of Renesas Electronics Corporation. NESG7030M04 PACKAGE DIMENSIONS 2.0±0.1 IN U 1 1.25 2 3 4 1.30 1.30 0.65 4 0.30+0.1 –0.05 0.11+0.1 –0.05 0.59±0.05 0.30+0.1 –0.05 1 0.65 0.60 0.65 1.25 2.0±0.1 ED (1.05) 0.30+0.1 –0.05 (Bottom View) 1.25±0.1 3 2.05±0.1 2 0.40+0.1 –0.05 FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04 PKG) (UNIT: mm) NT PIN CONNECTIONS Emitter Collector Emitter Base DI SC O 1. 2. 3. 4. R09DS0037EJ0100 Rev.1.00 Apr 18, 2012 Page 9 of 9 Revision History Rev. Apr 18, 2012 Description Summary Page − First edition issued DI SC O NT IN U ED 1.00 Date NESG7030M04 Data Sheet All trademarks and registered trademarks are the property of their respective owners. C-1