NE85618

NPN SILICON RF TRANSISTOR
NE85618 / 2SC5011
JEITA
Part No.
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
4-PIN SUPER MINIMOLD
FEATURES
• High Gain Bandwidth Product (fT = 6.5 GHz TYP.)
• Low Noise, High Gain
• Low Voltage Operation
• 4-pin super mini mold Package
ORDERING INFORMATION
Part Number
Quantity
NE85618-A
2SC5011-A
50 pcs (Non reel)
NE85618-T1-A
2SC5011-T1-A
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T A = +25C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3
V
IC
100
mA
150
mW
Collector Current
Total Power Dissipation
Ptot
Note
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150
C
Note Free air
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10515EJ01V0DS (1st edition)
(Previous No. P10399EJ2V0DS00)
Date Published August 2004 CP(K)
The mark  shows major revised points.
NE85618 / 2SC5011
ELECTRICAL CHARACTERISTICS (T A = +25C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 10 V, IE = 0 mA


1.0
A
Emitter Cut-off Current
IEBO
DC Current Gain
hFE
VEB = 1 V, IC = 0 mA


1.0
A
Note 1
VCE = 10 V, IC = 20 mA
50
120
250

fT
VCE = 10 V, IC = 20 mA

6.5
–
GHz
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
11
13

dB
VCE = 10 V, IC = 7 mA, f = 1.0 GHz

1.1
2.0
dB
VCB = 10 V, IE = 0 mA, f = 1.0 MHz

0.5
0.9
pF
RF Characteristics
Gain Bandwidth Product
S21e
Insertion Power Gain
Noise Figure
2
NF
Reverse Transfer Capacitance
Cre
Note 2
Notes 1. Pulse measurement: PW  350 s, Duty Cycle  2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
2
Rank
EB
FB
GB
Marking
R26
R27
R28
hFE Value
50 to 100
80 to 160
125 to 250
Data Sheet PU10515EJ01V0DS
NE85618 / 2SC5011
TYPICAL CHARACTERISTICS (T A = +25C, unless otherwise specified)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10515EJ01V0DS
3
NE85618 / 2SC5011
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
4
Data Sheet PU10515EJ01V0DS
NE85618 / 2SC5011
PACKAGE DIMENSIONS
4-PIN SUPER MINIMOLD (UNIT: mm)
Data Sheet PU10515EJ01V0DS
5
NOTICE
1.
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application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California
Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits,
software, or information.
2.
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not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
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You should use the Renesas Electronics products described in this document within the range specified by California Eastern Laboratories, especially with
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beyond such specified ranges.
7.
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the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation
resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by
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8.
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NOTE 3: Products and product information are subject to change without notice.
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