UPC8172TB-A

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC8172TB
SILICON MMIC 2.5 GHz FREQUENCY UP-CONVERTER
FOR WIRELESS TRANSCEIVER
DESCRIPTION
The µPC8172TB is a silicon monolithic integrated circuit designed as frequency up-converter for wireless
transceiver transmitter stage.
This IC is as same circuit current as conventional µPC8106TB, but operates at higher frequency, higher gain and
lower distortion. Consequently this IC is suitable for mobile communications.
FEATURES
• Recommended operating frequency : fRFout = 0.8 to 2.5 GHz
• Higher IP3
: CG = 9.5 dB TYP., OIP3 = +7.5 dBm TYP. @ fRFout = 0.9 GHz
• High-density surface mounting
: 6-pin super minimold package
• Supply voltage
: VCC = 2.7 to 3.3 V
APPLICATIONS
• PCS1900M
• 2.4 GHz band transmitter/receiver system (wireless LAN etc.)
ORDERING INFORMATION
Part Number
µPC8172TB-E3
Remark
Package
Marking
6-pin super minimold
C3A
Supplying Form
• Embossed tape 8 mm wide.
• Pin 1, 2, 3 face the tape perforation side.
• Qty 3 kpcs/reel.
To order evaluation samples, please contact your nearby sales office.
(Part number for sample order: µPC8172TB-A)
Caution Electro-static sensitive devices
Document No. P14729EJ2V0DS00 (2nd edition)
Date Published September 2000 N CP(K)
The mark
shows major revised points.
µPC8172TB
PIN CONNECTIONS
3
2
1
Pin No.
Pin Name
1
IFinput
2
GND
3
LOinput
4
PS
5
VCC
6
RFoutput
(Bottom View)
C3A
(Top View)
4
4
3
5
5
2
6
6
1
SERIES PRODUCTS (TA = +25°C, VCC = VRFout = 3.0 V, ZS = ZL = 50 Ω)
CG (dB)
ICC
(mA)
fRFout
(GHz)
µPC8172TB
9
0.8 to 2.5
µPC8106TB
9
µPC8109TB
µPC8163TB
Part Number
@RF 0.9 GHz
Note
@RF 1.9 GHz
@RF 2.4 GHz
9.5
8.5
8.0
0.4 to 2.0
9
7
−
5
0.4 to.2.0
6
4
−
16.5
0.8 to 2.0
9
5.5
−
PO(sat) (dBm)
Part Number
@RF 0.9 GHz
Note
OIP3 (dBm)
@RF 1.9 GHz
@RF 2.4 GHz
@RF 0.9 GHz
Note
@RF 1.9 GHz
@RF 2.4 GHz
µPC8172TB
+0.5
0
−0.5
+7.5
+6.0
+4.0
µPC8106TB
−2
−4
−
+5.5
+2.0
−
µPC8109TB
−5.5
−7.5
−
+1.5
−1.0
−
µPC8163TB
+0.5
−2
−
+9.5
+6.0
−
Note fRFout = 0.83 GHz @ µPC8163TB
Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
To know the associated product, please refer to each latest data sheet.
BLOCK DIAGRAM (FOR THE µPC8172TB)
(Top View)
LOinput
PS
GND
VCC
RFoutput
IFinput
2
Data Sheet P14729EJ2V0DS00
µPC8172TB
SYSTEM APPLICATION EXAMPLES (SCHEMATICS OF IC LOCATION IN THE SYSTEM)
Wireless Transceiver
Low Noise Tr.
DEMOD.
RX
÷N
VCO
SW
I
Q
PLL
PLL
I
0°
Phase
shifter
TX
PA
µPC8172TB
90°
Q
To know the associated products, please refer to each latest data sheet.
Data Sheet P14729EJ2V0DS00
3
µPC8172TB
CONTENTS
1. PIN EXPLANATION ..........................................................................................................................
5
2. ABSOLUTE MAXIMUM RATINGS ..................................................................................................
6
3. RECOMMENDED OPERATING CONDITIONS...............................................................................
6
4. ELECTRICAL CHARACTERISTICS ................................................................................................
6
5. OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY......................................
7
6. TEST
6.1
6.2
6.3
CIRCUIT .................................................................................................................................. 8
TEST CIRCUIT 1 (fRFout = 900 MHz).................................................................................... 8
TEST CIRCUIT 2 (fRFout = 1.9 GHz)..................................................................................... 9
TEST CIRCUIT 3 (fRFout = 2.4 GHz)..................................................................................... 10
7. TYPICAL CHARACTERISTICS........................................................................................................ 12
8. PACKAGE DIMENSIONS ................................................................................................................. 24
9. NOTE ON CORRECT USE ............................................................................................................. 25
10. RECOMMENDED SOLDERING CONDITIONS............................................................................... 25
4
Data Sheet P14729EJ2V0DS00
µPC8172TB
1. PIN EXPLANATION
Pin
No.
1
2
Pin
Name
IFinput
GND
Applied
Voltage
(V)
Pin
Voltage
(V)Note
−
1.4
GND
−
Function and Explanation
This pin is IF input to double balanced mixer (DBM). The input is
designed as high impedance.
The circuit contributes to suppress spurious signal. Also this
symmetrical circuit can keep
specified performance insensitive
to process-condition distribution.
For above reason, double balanced mixer is adopted.
GND pin. Ground pattern on the
board should be formed as wide
as possible. Track Length should
be kept as short as possible to
minimize ground impedance.
−
2.3
VCC
2.7 to 3.3
−
Supply voltage pin.
6
RFoutput
Same
bias as
VCC
through
external
inductor
−
This pin is RF output from DBM.
This pin is designed as open
collector. Due to the high impedance output, this pin should be
externally equipped with LC
matching circuit to next stage.
4
PS
VCC/GND
−
Power save control pin. Bias
controls operation as follows.
3
LOinput
5
Equivalent Circuit
5
6
3
1
Local input pin. Recommendable
input level is −10 to 0 dBm.
Pin bias
2
VCC
5
Control
4
VCC
Operation
GND
Power Save
GND
2
Note Each pin voltage is measured with VCC = VPS = VRFout = 3.0 V.
Data Sheet P14729EJ2V0DS00
5
µPC8172TB
2. ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Test Conditions
Rating
Unit
Supply Voltage
VCC
TA = +25°C
3.6
V
PS pin Input Voltage
VPS
TA = +25°C
3.6
V
Power Dissipation of Package
PD
Mounted on double-side copperclad 50 × 50 × 1.6
mm epoxy glass PWB
(TA = +85°C)
270
mW
Operating Ambient Temperature
TA
−40 to +85
°C
Storage Temperature
Tstg
−55 to +150
°C
Input Power
Pin
+10
dBm
3. RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Supply Voltage
VCC
The same voltage should be applied
to pin 5 and 6
2.7
3.0
3.3
V
Operating Ambient Temperature
TA
−40
+25
+85
°C
Local Input Level
PLOin
ZS = 50 Ω (without matching)
−10
−5
0
dBm
RF Output Frequency
fRFout
With external matching circuit
0.8
−
2.5
GHz
50
−
400
MHz
IF Input Frequency
fIFin
4. ELECTRICAL CHARACTERISTICS
(TA = +25°C, VCC = VRFout = 3.0 V, fIFin = 240 MHz, PLOin = −5 dBm, and VPS ≥ 2.7 V unless otherwise specified)
Parameter
Symbol
Circuit Current
Test Conditions
Note
TYP.
MAX.
Unit
ICC
No Signal
5.5
9.0
13
mA
Circuit Current In Power Save
Mode
ICC(PS)
VPS = 0 V
−
−
2
µA
Conversion Gain
CG1
fRFout = 0.9 GHz, PIFin = −30 dBm
6.5
9.5
12.5
dB
CG2
fRFout = 1.9 GHz, PIFin = −30 dBm
5.5
8.5
11.5
dB
CG3
fRFout = 2.4 GHz, PIFin = −30 dBm
5
8.0
11.0
dB
Saturated RF Output Power
PO(sat)1
fRFout = 0.9 GHz, PIFin = 0 dBm
−2.5
+0.5
−
dBm
PO(sat)2
fRFout = 1.9 GHz, PIFin = 0 dBm
−3.5
0
−
dBm
PO(sat)3
fRFout = 2.4 GHz, PIFin = 0 dBm
−4
−0.5
−
dBm
Note fRFout < fLoin @ fRFout = 0.9 GHz
fLoin < fRFout @ fRFout = 1.9 GHz/2.4 GHz
6
MIN.
Data Sheet P14729EJ2V0DS00
µPC8172TB
5. OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY
(TA = +25°C, VCC = VRFout = 3.0 V, PLOin = −5 dBm, and VPS ≥ 2.7 V unless otherwise specified)
Parameter
Output Third-Order Distortion
Intercept Point
Input Third-Order Distortion
Intercept Point
SSB Noise Figure
Power Save
Response Time
Test Conditions
Symbol
OIP31
Note
fRFout = 0.9 GHz
OIP32
fRFout = 1.9 GHz
OIP33
fRFout = 2.4 GHz
IIP31
fRFout = 0.9 GHz
fIFin1 = 240 MHz
fIFin2 = 241 MHz
fIFin1 = 240 MHz
fIFin2 = 241 MHz
Data
Unit
+7.5
dBm
+6.0
dBm
+4.0
dBm
−2.0
dBm
−2.5
dBm
IIP32
fRFout = 1.9 GHz
IIP33
fRFout = 2.4 GHz
−4.0
dBm
SSB•NF1
fRFout = 0.9 GHz, fIFin = 240 MHz
9.5
dB
SSB•NF2
fRFout = 1.9 GHz, fIFin = 240 MHz
10.4
dB
SSB•NF3
fRFout = 2.4 GHz, fIFin = 240 MHz
10.6
dB
Rise time
TPS(rise)
VPS: GND → VCC
1
µs
Fall time
TPS(fall)
VPS: VCC → GND
1.5
µs
Note fRFout < fLOin @ fRFout = 0.9 GHz
fLOin < fRFout @ fRFout = 1.9 GHz/2.4 GHz
Data Sheet P14729EJ2V0DS00
7
µPC8172TB
6. TEST CIRCUIT
6.1 TEST CIRCUIT 1 (fRFout = 900 MHz)
Strip Line
Spectrum Analyzer
6
50 Ω
C3
C8
Signal Generator
100 pF
100 pF 1 pF
L
RFoutput IFinput
1
50 Ω
C1
10 nH
5
VCC
GND
2
Signal Generator
100 pF
1 000 pF
VCC
C5
4
C7
C4
C6
PS
LOinput
3
50 Ω
C2
1 000 pF
1 µF 68 pF 1 µF
EXAMPLE OF TEST CIRCUIT 1 ASSEMBLED ON EVALUATION BOARD
LOinput
PS bias
C4
C2
PS
VCC
GND
C5
C7
C6
L
Voltage Supply
C
8
IFinput
C3
C1
RFoutput
µ PC8172TB
COMPONENT LIST
Form
Chip capacitor
Chip inductor
Symbol
Value
(∗1) 35 × 42 × 0.4 mm polyimide board, double-sided copper clad
C1, C2, C3
100 pF
(∗2) Ground pattern on rear of the board
C4
1 000 pF
C5, C6
1 µF
C7
68 pF
C8
1 pF
L
10 nH
(∗3) Solder plated patterns
(∗4)
: Through holes
Note
Note 10 nH: LL1608-FH10N (TOKO Co., Ltd.)
8
Data Sheet P14729EJ2V0DS00
µPC8172TB
6.2 TEST CIRCUIT 2 (fRFout = 1.9 GHz)
Strip Line
Spectrum Analyzer
50 Ω
2.75 pF
C8
Signal Generator
100 pF
100 pF
C3
6
L
RFoutput IFinput
1
50 Ω
C1
470 nH
5
GND
VCC
2
Signal Generator
100 pF
1 000 pF
4
PS
LOinput
3
50 Ω
C2
VCC
C5
C7
C6
C4
1 000 pF
1 µF 30 pF 1 µF
EXAMPLE OF TEST CIRCUIT 2 ASSEMBLED ON EVALUATION BOARD
LOinput
C4
C2
PS bias
PS
GND
L
VCC
C5
C7
C6
Voltage Supply
IFinput
C3
C1
C8
RFoutput
µ PC8172TB
COMPONENT LIST
Form
Chip capacitor
Symbol
Value
(∗1) 35 × 42 × 0.4 mm polyimide board, double-sided copper clad
C1, C2, C3
100 pF
(∗2) Ground pattern on rear of the board
C4
1 000 pF
C5, C6
1 µF
C7
30 pF
C8
Chip inductor
L
(∗3) Solder plated patterns
(∗4)
: Through holes
2.75 pF
Note
470 nH
Note 470 nH: LL2012-FR47 (TOKO Co., Ltd.)
Data Sheet P14729EJ2V0DS00
9
µPC8172TB
6.3 TEST CIRCUIT 3 (fRFout = 2.4 GHz)
Strip Line
Spectrum Analyzer
50 Ω
1.75 pF
Signal Generator
100 pF
100 pF
C3
6
C8
L
RFoutput IFinput
1
50 Ω
C1
470 nH
5
GND
VCC
2
Signal Generator
100 pF
1 000 pF
4
PS
LOinput
3
50 Ω
C2
VCC
C5
C7
C6
C4
1 000 pF
1 µF 10 pF 1 µF
EXAMPLE OF TEST CIRCUIT 3 ASSEMBLED ON EVALUATION BOARD
LOinput
C4
C2
PS bias
PS
GND
L
VCC
C5
C7
C6
Voltage Supply
IFinput
C1
C8
C3
RFoutput
µ PC8172TB
COMPONENT LIST
Form
Chip capacitor
Chip inductor
Symbol
Value
(∗1) 35 × 42 × 0.4 mm polyimide board, double-sided copper clad
C1, C2, C3
100 pF
(∗2) Ground pattern on rear of the board
C4
1 000 pF
C5, C6
1 µF
C7
10 pF
C8
1.75 pF
L
(∗3) Solder plated patterns
(∗4)
: Through holes
Note
470 nH
Note 470 nH: LL2012-FR47 (TOKO Co., Ltd.)
10
Data Sheet P14729EJ2V0DS00
µPC8172TB
Caution The test circuits and board pattern on data sheet are for performance evaluation use only (They
are not recommended circuits). In the case of actual design-in, matching circuit should be determined using S-parameter of desired frequency in accordance to actual mounting pattern.
Data Sheet P14729EJ2V0DS00
11
µPC8172TB
7. TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°C, VCC = VRFout)
CIRCUIT CURRENT vs.
OPERATING AMBIENT TEMPERATURE
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
12
12
10
10
Circuit Current ICC (mA)
Circuit Current ICC (mA)
VCC = 3.3 V
TA = +85°C
8
6
TA = +25°C
4
TA = –40°C
2
0
1
2
3
6
4
no signal
VCC = VPS
0
–40
4
Supply Voltage VCC (V)
–20
Circuit Current ICC (mA)
10
8
6
4
2
VCC = 3.0 V
0
1
2
3
4
PS Pin Input Voltage VPS (V)
PS PIN CONTROL RESPONSE TIME
REF LVL = 0 dBm
ATT = 10 dB
10 dB/DIV (Vertical axis)
CENTER = 0.9 GHz
SPAN = 0 Hz
RBW = 3 MHz
VBW = 3 MHz
SWP = 50 µ sec
5 µ sec/DIV (Horizontal axis)
12
0
20
40
60
Operating Ambient Temperature TA (°C)
CIRCUIT CURRENT vs. PS PIN INPUT VOLTAGE
12
0
VCC = 3.0 V
VCC = 2.7 V
2
no signal
VCC = VPS
0
8
Data Sheet P14729EJ2V0DS00
80
µPC8172TB
S-PARAMETERS FOR EACH PORT (VCC = VPS = VRFout = 3.0 V)
(The parameters are monitored at DUT pins)
LO port
RF port (without matching)
Z
S11
REF 1.0 Units
200.0 mUnits/
1
21.625 Ω –91.148 Ω
hp
Z
S22
REF 1.0 Units
200.0 mUnits/
1
71.5 Ω –240.34 Ω
hp
MARKER 1
1.15 GHz
MARKER 1
900.0 MHz
MARKER 2
1.65 GHz
MARKER 2
1.9 GHz
MARKER 3
2.15 GHz
MARKER 3
2.5 GHz
1
1
3
2
3
2
START 0.400000000 GHz
STOP 2.500000000 GHz
START
STOP
0.400000000 GHz
2.500000000 GHz
IF port
Z
S11
REF 1.0 Units
200.0 mUnits/
1
332.63 Ω –601.34 Ω
hp
MARKER 1
240.0 MHz
1
START
STOP
0.100000000 GHz
1.000000000 GHz
Data Sheet P14729EJ2V0DS00
13
µPC8172TB
S-PARAMETERS FOR MATCHED RF OUTPUT (VCC = VPS = VRFout = 3.0 V) −ON EVALUATION BOARD−
−
(S22 data are monitored at RF connector on board)
900 MHz (matched in test circuit 1)
1.9 GHz (matched in test circuit 2)
S22
Z
REF 1.0 Units
200.0 mUnits/
1
55.615 Ω 2.2849 Ω
hp
C
MARKER 1
900.0 MHz
D
S22
Z
REF 1.0 Units
200.0 mUnits/
1
38.584 Ω –2.2656 Ω
hp
C
MARKER 1
1.9 GHz
D
1
1
START 0.400000000 GHz
STOP 1.400000000 GHz
START
STOP
log MAG.
S22
REF 0.0 dB
10.0 dB/
1
–24.754 dB
hp
C
1.400000000 GHz
2.400000000 GHz
log MAG.
S22
REF 0.0 dB
10.0 dB/
1
–18.196 dB
hp
C
MARKER 1
900.0 MHz
D
MARKER 1
1.9 GHz
D
1
1
1
START
STOP
14
0.400000000 GHz
1.400000000 GHz
START
STOP
Data Sheet P14729EJ2V0DS00
1.400000000 GHz
2.400000000 GHz
µPC8172TB
S-PARAMETERS FOR MATCHED RF OUTPUT (VCC = VPS = VRFout = 3.0 V) −ON EVALUATION BOARD−
−
(S22 data are monitored at RF connector on board)
2.4 GHz (matched in test circuit 3)
S22
Z
REF 1.0 Units
200.0 mUnits/
1
47.975 Ω –7.1113 Ω
hp
C
MARKER 1
2.4 GHz
D
1
START 1.900000000 GHz
STOP 2.900000000 GHz
log MAG.
S22
REF 0.0 dB
10.0 dB/
1
–22.326 dB
hp
C
MARKER 1
2.4 GHz
D
1
1
START 1.900000000 GHz
STOP 2.900000000 GHz
Data Sheet P14729EJ2V0DS00
15
µPC8172TB
CONVERSION GAIN vs. LOCAL INPUT LEVEL
RF OUTPUT LEVEL vs. IF INPUT LEVEL
15
5
VCC = 3.3 V
10
VCC = 3.0 V
5
VCC = 2.7 V
0
–5
fRFout = 900 MHz
fLOin = 1 140 MHz
PIFin = –30 dBm
VCC = VPS
–10
–15
–30
–25
–20
–15
–10
–5
0
5
RF Output Level PRFout (dBm)
Conversion Gain CG (dB)
VCC = 3.3 V
0
VCC = 3.0 V
–5
–10
–15
fRFout = 900 MHz
fLOin = 1 140 MHz
PLOin = –5 dBm
VCC = VPS
–20
–25
–30
10
VCC = 2.7 V
–25
Local Input Level PLOin (dBm)
CONVERSION GAIN vs. LOCAL INPUT LEVEL
–10
–5
0
5
10
RF OUTPUT LEVEL vs. IF INPUT LEVEL
5
10
TA = –40°C
5
TA = +85°C
0
TA = +25°C
–5
fRFout = 900 MHz
fLOin = 1 140 MHz
PIFin = –30 dBm
VCC = VPS = 3.0 V
–10
–15
–30
–25
–20
–15
–10
–5
0
5
10
RF Output Level PRFout (dBm)
Conversion Gain CG (dB)
–15
IF Input Level PIFin (dBm)
15
0
–5
TA = –40°C
TA = +85°C
–10
–15
fRFout = 900 MHz
fLOin = 1 140 MHz
PLOin = –5 dBm
VCC = VPS = 3.0 V
TA = +25°C
–20
–25
–30
Local Input Level PLOin (dBm)
16
–20
–25
–20
–15
–10
–5
0
IF Input Level PIFin (dBm)
Data Sheet P14729EJ2V0DS00
5
10
µPC8172TB
CONVERSION GAIN vs. LOCAL INPUT LEVEL
RF OUTPUT LEVEL vs. IF INPUT LEVEL
15
5
VCC = 3.3 V
10
VCC = 3.0 V
5
VCC = 2.7 V
0
–5
–10
–15
–30
–25
–20
–15
–10
fRFout = 1.9 GHz
fLOin = 1 660 MHz
PIFin = –30 dBm
VCC = VPS
–5
0
5
10
RF Output Level PRFout (dBm)
Conversion Gain CG (dB)
VCC = 3.3 V
0
VCC = 3.0 V
–5
VCC = 2.7 V
–10
–15
fRFout = 1.9 GHz
fLOin = 1 660 MHz
PLOin = –5 dBm
VCC = VPS
–20
–25
–30
–25
Local Input Level PLOin (dBm)
–15
–10
–5
0
5
10
IF Input Level PIFin (dBm)
CONVERSION GAIN vs. LOCAL INPUT LEVEL
RF OUTPUT LEVEL vs. IF INPUT LEVEL
5
10
TA = –40°C
5
0
TA = +25°C
–5
TA = +85°C
fRFout = 1.9 GHz
fLOin = 1 660 MHz
PIFin = –30 dBm
VCC = VPS = 3.0 V
–10
–15
–30
–25
–20
–15
–10
–5
0
5
10
RF Output Level PRFout (dBm)
15
Conversion Gain CG (dB)
–20
0
–5
TA = –40°C
–10
TA = +25°C
–15
TA = +85°C
–20
–25
–30
Local Input Level PLOin (dBm)
–25
–20
–15
–10
fRFout = 1.9 GHz
fLOin = 1 660 MHz
PLOin = –5 dBm
VCC = VPS = 3.0 V
–5
0
5
10
IF Input Level PIFin (dBm)
Data Sheet P14729EJ2V0DS00
17
µPC8172TB
CONVERSION GAIN vs. LOCAL INPUT LEVEL
RF OUTPUT LEVEL vs. IF INPUT LEVEL
15
5
RF Output Level PRFout (dBm)
Conversion Gain CG (dB)
VCC = 3.3 V
10
VCC = 3.0 V
5
VCC = 2.7 V
0
–5
fRFout = 2.4 GHz
fLOin = 2 160 MHz
PIFin = –30 dBm
VCC = VPS
–10
–15
–30
–25
–20
–15 –10
–5
0
5
0
VCC = 3.0 V
–5
VCC = 2.7 V
–10
–15
fRFout = 2.4 GHz
fLOin = 2 160 MHz
PLOin = –5 dBm
VCC = VPS
–20
–25
–30
10
VCC = 3.3 V
–25
Local Input Level PLOin (dBm)
CONVERSION GAIN vs. LOCAL INPUT LEVEL
0
5
10
RF OUTPUT LEVEL vs. IF INPUT LEVEL
10
TA = –40°C
0
TA = +25°C
–5
TA = +85°C
–10
–25
–20
–15 –10
fRFout = 2.4 GHz
fLOin = 2 160 MHz
PIFin = –30 dBm
VCC = VPS = 3.0 V
–5
0
5
10
RF Output Level PRFout (dBm)
Conversion Gain CG (dB)
–5
5
–15
–30
0
–5
TA = –40°C
–10
TA = +25°C
–15
TA = +85°C
–20
–25
–30
Local Input Level PLOin (dBm)
18
–15 –10
IF Input Level PIFin (dBm)
15
5
–20
–25
–20
–15 –10
fRFout = 2.4 GHz
fLOin = 2 160 MHz
PLOin = –5 dBm
VCC = VPS = 3.0 V
–5
0
IF Input Level PIFin (dBm)
Data Sheet P14729EJ2V0DS00
5
10
IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL
10
0
–10
–20
–30
TA = +25°C
VCC = VPS = 2.7 V
fRFout = 900 MHz
fIFin1 = 240 MHz
fIFin2 = 241 MHz
fLOin = 1 140 MHz
PLOin = –5 dBm
–40
–50
–60
–70
–80
–30
–25
–20
–15
–10
–5
0
5
3rd Order Intermodulation Distortion IM3 (dBm)
RF Output Level of Each Tone PRFout (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
RF Output Level of Each Tone PRFout (dBm)
µPC8172TB
IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL
10
0
–10
–20
–30
TA = –40°C
VCC = VPS = 3.0 V
fRFout = 900 MHz
fIFin1 = 240 MHz
fIFin2 = 241 MHz
fLOin = 1 140 MHz
PLOin = –5 dBm
–40
–50
–60
–70
–80
–30
–25
IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL
10
0
–10
–20
–30
TA = +25°C
VCC = VPS = 3.0 V
fRFout = 900 MHz
fIFin1 = 240 MHz
fIFin2 = 241 MHz
fLOin = 1 140 MHz
PLOin = –5 dBm
–40
–50
–60
–70
–80
–30
–25
–20
–15
–10
–5
0
5
0
–10
–20
–30
TA = +25°C
VCC = VPS = 3.3 V
fRFout = 900 MHz
fIFin1 = 240 MHz
fIFin2 = 241 MHz
fLOin = 1 140 MHz
PLOin = –5 dBm
–70
–80
–30
–25
–20
–15
–10
–5
0
5
3rd Order Intermodulation Distortion IM3 (dBm)
RF Output Level of Each Tone PRFout (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
RF Output Level of Each Tone PRFout (dBm)
IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL
–60
–5
0
5
IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL
0
–10
–20
–30
–40
TA = +25°C
VCC = VPS = 3.0 V
fRFout = 900 MHz
fIFin1 = 240 MHz
fIFin2 = 241 MHz
fLOin = 1 140 MHz
PLOin = –5 dBm
–50
–60
–70
–80
–30
–25
–20
–15
–10
–5
0
5
IF Input Level PIFin (dBm)
10
–50
–10
10
IF Input Level PIFin (dBm)
–40
–15
IF Input Level PIFin (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
RF Output Level of Each Tone PRFout (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
RF Output Level of Each Tone PRFout (dBm)
IF Input Level PIFin (dBm)
–20
IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL
10
0
–10
–20
–30
TA = +85°C
VCC = VPS = 3.0 V
fRFout = 900 MHz
fIFin1 = 240 MHz
fIFin2 = 241 MHz
fLOin = 1 140 MHz
PLOin = –5 dBm
–40
–50
–60
–70
–80
–30
IF Input Level PIFin (dBm)
–25
–20
–15
–10
–5
0
5
IF Input Level PIFin (dBm)
Data Sheet P14729EJ2V0DS00
19
IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL
10
0
–10
–20
–30
TA = +25°C
VCC = VPS = 2.7 V
fRFout = 1.9 GHz
fIFin1 = 240 MHz
fIFin2 = 241 MHz
fLOin = 1 660 MHz
PLOin = –5 dBm
–40
–50
–60
–70
–80
–30
–25
–20
–15
–10
–5
0
5
3rd Order Intermodulation Distortion IM3 (dBm)
RF Output Level of Each Tone PRFout (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
RF Output Level of Each Tone PRFout (dBm)
µPC8172TB
IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL
10
0
–10
–20
–30
TA = –40°C
VCC = VPS = 3.0 V
fRFout = 1.9 GHz
fIFin1 = 240 MHz
fIFin2 = 241 MHz
fLOin = 1 660 MHz
PLOin = –5 dBm
–40
–50
–60
–70
–80
–30
–25
IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL
10
0
–10
–20
–30
TA = +25°C
VCC = VPS = 3.0 V
fRFout = 1.9 GHz
fIFin1 = 240 MHz
fIFin2 = 241 MHz
fLOin = 1 660 MHz
PLOin = –5 dBm
–40
–50
–60
–70
–80
–30
–25
–20
–15
–10
–5
0
5
0
–10
–20
–30
TA = +25°C
VCC = VPS = 3.3 V
fRFout = 1.9 GHz
fIFin1 = 240 MHz
fIFin2 = 241 MHz
fLOin = 1 660 MHz
PLOin = –5 dBm
–70
–80
–30
–25
–20
–15
–10
–5
0
5
3rd Order Intermodulation Distortion IM3 (dBm)
RF Output Level of Each Tone PRFout (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
RF Output Level of Each Tone PRFout (dBm)
IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL
–60
0
5
IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL
0
–10
–20
–30
–40
TA = +25°C
VCC = VPS = 3.0 V
fRFout = 1.9 GHz
fIFin1 = 240 MHz
fIFin2 = 241 MHz
fLOin = 1 660 MHz
PLOin = –5 dBm
–50
–60
–70
–80
–30
–25
–20
–15
–10
–5
0
5
IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL
10
0
–10
–20
–30
TA = +85°C
VCC = VPS = 3.0 V
fRFout = 1.9 GHz
fIFin1 = 240 MHz
fIFin2 = 241 MHz
fLOin = 1 660 MHz
PLOin = –5 dBm
–40
–50
–60
–70
–80
–30
IF Input Level PIFin (dBm)
20
–5
IF Input Level PIFin (dBm)
10
–50
–10
10
IF Input Level PIFin (dBm)
–40
–15
IF Input Level PIFin (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
RF Output Level of Each Tone PRFout (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
RF Output Level of Each Tone PRFout (dBm)
IF Input Level PIFin (dBm)
–20
–25
–20
–15
–10
–5
IF Input Level PIFin (dBm)
Data Sheet P14729EJ2V0DS00
0
5
IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL
10
0
–10
–20
–30
TA = +25°C
VCC = VPS = 2.7 V
fRFout = 2.4 GHz
fIFin1 = 240 MHz
fIFin2 = 241 MHz
fLOin = 2 160 MHz
PLOin = –5 dBm
–40
–50
–60
–70
–80
–30
–25
–20
–15
–10
–5
0
5
3rd Order Intermodulation Distortion IM3 (dBm)
RF Output Level of Each Tone PRFout (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
RF Output Level of Each Tone PRFout (dBm)
µPC8172TB
IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL
10
0
–10
–20
–30
TA = –40°C
VCC = VPS = 3.0 V
fRFout = 2.4 GHz
fIFin1 = 240 MHz
fIFin2 = 241 MHz
fLOin = 2 160 MHz
PLOin = –5 dBm
–40
–50
–60
–70
–80
–30
–25
IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL
10
0
–10
–20
–30
TA = +25°C
VCC = VPS = 3.0 V
fRFout = 2.4 GHz
fIFin1 = 240 MHz
fIFin2 = 241 MHz
fLOin = 2 160 MHz
PLOin = –5 dBm
–40
–50
–60
–70
–80
–30
–25
–20
–15
–10
–5
0
5
0
–10
–20
–30
TA = +25°C
VCC = VPS = 3.3 V
fRFout = 2.4 GHz
fIFin1 = 240 MHz
fIFin2 = 241 MHz
fLOin = 2 160 MHz
PLOin = –5 dBm
–70
–80
–30
–25
–20
–15
–10
–5
0
5
3rd Order Intermodulation Distortion IM3 (dBm)
RF Output Level of Each Tone PRFout (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
RF Output Level of Each Tone PRFout (dBm)
IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL
–60
–5
0
5
IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL
0
–10
–20
–30
–40
TA = +25°C
VCC = VPS = 3.0 V
fRFout = 2.4 GHz
fIFin1 = 240 MHz
fIFin2 = 241 MHz
fLOin = 2 160 MHz
PLOin = –5 dBm
–50
–60
–70
–80
–30
–25
–20
–15
–10
–5
0
5
IF Input Level PIFin (dBm)
10
–50
–10
10
IF Input Level PIFin (dBm)
–40
–15
IF Input Level PIFin (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
RF Output Level of Each Tone PRFout (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
RF Output Level of Each Tone PRFout (dBm)
IF Input Level PIFin (dBm)
–20
IM3, RF OUTPUT LEVEL vs. IF INPUT LEVEL
10
0
–10
–20
–30
TA = +85°C
VCC = VPS = 3.0 V
fRFout = 2.4 GHz
fIFin1 = 240 MHz
fIFin2 = 241 MHz
fLOin = 2 160 MHz
PLOin = –5 dBm
–40
–50
–60
–70
–80
–30
IF Input Level PIFin (dBm)
–25
–20
–15
–10
–5
0
5
IF Input Level PIFin (dBm)
Data Sheet P14729EJ2V0DS00
21
µPC8172TB
LOCAL LEAKAGE AT IF PIN vs.
LOCAL INPUT FREQUENCY
LOCAL LEAKAGE AT IF PIN vs.
LOCAL INPUT FREQUENCY
0
Local Leakage at IF Pin LOif (dBm)
Local Leakage at IF Pin LOif (dBm)
0
–10
–20
–30
fRFout = 900 MHz
PLOin = –5 dBm
VCC = VPS = 3.0 V
–40
–50
0
0.5
1
1.5
2
2.5
0.5
1
1.5
2
2.5
LOCAL LEAKAGE AT RF PIN vs.
LOCAL INPUT FREQUENCY
3
0
Local Leakage at RF Pin LOrf (dBm)
Local Leakage at RF Pin LOrf (dBm)
0
LOCAL LEAKAGE AT RF PIN vs.
LOCAL INPUT FREQUENCY
–20
–30
fRFout = 900 MHz
PLOin = –5 dBm
VCC = VPS = 3.0 V
–40
0
0.5
1
1.5
2
2.5
3
–10
–20
–30
fRFout = 1.9 GHz
PLOin = –5 dBm
VCC = VPS = 3.0 V
–40
–50
0
0.5
1
1.5
2
2.5
Local Input Frequency fLOin (GHz)
Local Input Frequency fLOin (GHz)
IF LEAKAGE AT RF PIN vs.
IF INPUT FREQUENCY
IF LEAKAGE AT RF PIN vs.
IF INPUT FREQUENCY
3
0
–70
–80
fRFout = 900 MHz
fLOin = 1 140 MHz
PLOin = –5 dBm
VCC = VPS = 3.0 V
–90
0
100
200
300
400
500
IF Leakage at RF Pin IFrf (dBm)
–60
fRFout = 1.9 GHz
fLOin = 1 660 MHz
PLOin = –5 dBm
VCC = VPS = 3.0 V
–10
–20
–30
–40
–50
IF Input Frequency fIFin (MHz)
22
fRFout = 1.9 GHz
PLOin = –5 dBm
VCC = VPS = 3.0 V
–40
Local Input Frequency fLOin (GHz)
–50
IF Leakage at RF Pin IFrf (dBm)
–30
Local Input Frequency fLOin (GHz)
–10
–100
–20
–50
3
0
–50
–10
0
100
200
300
400
IF Input Frequency fIFin (MHz)
Data Sheet P14729EJ2V0DS00
500
µPC8172TB
LOCAL LEAKAGE AT IF PIN vs.
LOCAL INPUT FREQUENCY
LOCAL LEAKAGE AT RF PIN vs.
LOCAL INPUT FREQUENCY
0
Local Leakage at RF Pin LOrf (dBm)
Local Leakage at IF Pin LOif (dBm)
0
–10
–20
–30
fRFout = 2.4 GHz
PLOin = –5 dBm
VCC = VPS = 3.0 V
–40
–50
0
0.5
1
1.5
2
2.5
3
–10
–20
–30
fRFout = 2.4 GHz
PLOin = –5 dBm
VCC = VPS = 3.0 V
–40
–50
0
0.5
1
1.5
2
2.5
3
Local Input Frequency fLOin (GHz)
Local Input Frequency fLOin (GHz)
IF LEAKAGE AT RF PIN vs.
IF INPUT FREQUENCY
IF Leakage at RF Pin IFrf (dBm)
0
fRFout = 2.4 GHz
fLOin = 2 160 MHz
PLOin = –5 dBm
VCC = VPS = 3.0 V
–10
–20
–30
–40
–50
0
100
200
300
400
500
IF Input Frequency fIFin (MHz)
Remark The graphs indicate nominal characteristics.
Data Sheet P14729EJ2V0DS00
23
µPC8172TB
8. PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
2.1±0.1
0.2+0.1
–0.05
0.65
0.65
1.3
2.0±0.2
1.25±0.1
24
Data Sheet P14729EJ2V0DS00
0.15+0.1
–0.05
0 to 0.1
0.7
0.9±0.1
0.1 MIN.
µPC8172TB
9. NOTE ON CORRECT USE
(1) Observe precautions for handling because of electrostatic sensitive devices.
(2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation).
(3) Connect a bypass capacitor (example: 1 000 pF) to the VCC pin.
(4) Connect a matching circuit to the RF output pin.
(5) The DC cut capacitor must be each attached to the input and output pins.
10. RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions.
Soldering Method
Soldering Conditions
Recommended Condition Symbol
Infrared Reflow
Package peak temperature: 235°C or below
Time: 30 seconds or less (at 210°C)
Note
Count: 3, Exposure limit: None
IR35-00-3
VPS
Package peak temperature: 215°C or below
Time: 40 seconds or less (at 200°C)
Note
Count: 3, Exposure limit: None
VP15-00-3
Wave Soldering
Soldering bath temperature: 260°C or below
Time: 10 seconds or less
Note
Count: 1, Exposure limit: None
WS60-00-1
Partial Heating
Pin temperature: 300°C
Time: 3 seconds or less (per side of device)
Note
Exposure limit: None
−
Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
Data Sheet P14729EJ2V0DS00
25
NOTICE
1.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and
application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California
Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits,
software, or information.
2.
California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does
not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
3.
California Eastern Laboratories and Renesas Electronics do not assume any liability for infringement of patents, copyrights, or other intellectual property
rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express,
implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of California Eastern Laboratories or Renesas
Electronics or others.
4.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. California Eastern
Laboratories and Renesas Electronics assume no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy
or otherwise misappropriation of Renesas Electronics product.
5.
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for each Renesas Electronics product depends on the product’s quality grade, as indicated below. “Standard”: Computers; office equipment; communications
equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and
industrial robots etc. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime
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Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product
for which the product is not intended by California Eastern Laboratories or Renesas Electronics.
6.
You should use the Renesas Electronics products described in this document within the range specified by California Eastern Laboratories, especially with
respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product
characteristics. California Eastern Laboratories shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products
beyond such specified ranges.
7.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as
the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation
resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by
fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy,
fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of
microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you.
Please contact a California Eastern Laboratories sales office for details as to environmental matters such as the environmental compatibility of each Renesas
8.
Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of
controlled substances, including without limitation, the EU RoHS Directive. California Eastern Laboratories and Renesas Electronics assume no liability for
damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
9.
Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited
under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document
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regulations and follow the procedures required by such laws and regulations.
10. It is the responsibility of the buyer or distributor of California Eastern Laboratories, who distributes, disposes of, or otherwise places the Renesas Electronics
product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, California Eastern Laboratories and
Renesas Electronics assume no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products.
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of California Eastern Laboratories.
12. Please contact a California Eastern Laboratories sales office if you have any questions regarding the information contained in this document or Renesas
Electronics products, or if you have any other inquiries.
NOTE 1: “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
NOTE 2: “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
NOTE 3: Products and product information are subject to change without notice.
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