NESG270034 PDS

NPN SILICON GERMANIUM RF TRANSISTOR
NESG270034
D
NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (2 W)
3-PIN POWER MINIMOLD (34 PKG)
FEATURES
UE
• This product is suitable for medium output power (2 W) amplification
Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz
Pout = 31.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz
• Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 25 V
• 3-pin power minimold (34 PKG)
Part Number
NESG270034
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IN
ORDERING INFORMATION
Order Number
Package
NESG270034-AZ
Quantity
3-pin power minimold
(34 PKG) (Pb-Free)
NESG270034-T1
Note
NESG270034-T1-AZ
25 pcs
Supplying Form
• Magazine case
(Non reel)
1 kpcs/reel
• 12 mm wide embossed taping
• Pin 2 (Emitter) face the perforation side of the tape
Note Contains Lead in the part except the electrode terminals.
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (T A = +25C)
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
25
V
Collector to Emitter Voltage
VCEO
9.2
V
Emitter to Base Voltage
VEBO
2.8
V
IC
750
mA
1.9
W
SC
Parameter
Collector Current
Total Power Dissipation
Ptot
Note
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150
C
2
Note Mounted on 34.2 cm  0.8 mm (t) glass epoxy PWB
DI
<R>
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10577EJ02V0DS (2nd edition)
Date Published December 2007 NS
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NESG270034
THERMAL RESISTANCE (T A = +25C)
Parameter
Termal Resistance from Junction to
Ratings
Unit
Rthj-a
65
C/W
Note
2
Note Mounted on 34.2 cm  0.8 mm (t) glass epoxy PWB
RECOMMENDED OPERATING RANGE (T A = +25C)
Collector to Emitter Voltage
Collector Current
Input Power
Note
Symbol
MIN.
TYP.
MAX.
Unit
VCE

6.0
7.2
V
IC

600
750
mA
Pin

20
23
dBm
DI
SC
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Note Input power under conditions of VCE  6.0 V, f = 460 MHz
UE
Parameter
D
Ambient
Symbol
2
Data Sheet PU10577EJ02V0DS
NESG270034
ELECTRICAL CHARACTERISTICS (T A = +25C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
ICBO
VCB = 9.2 V, IE = 0 mA


1
A
Emitter Cut-off Current
IEBO
VEB = 1.0 V, IC = 0 mA


1
A
VCE = 3 V, IC = 100 mA
80
120
180

19.5

dB
DC Current Gain
hFE
Note
RF Characteristics
GL
VCE = 6 V, IC (set) = 30 mA (RF OFF),
17.5
UE
Linner Gain (1)
D
Collector Cut-off Current
f = 460 MHz, Pin = 0 dBm
Linner Gain (2)
GL
VCE = 6 V, IC (set) = 30 mA (RF OFF),

15

dB
31.5
33.5

dBm

31.5

dBm

60

%

50

%
f = 900 MHz, Pin = 0 dBm
Output Power (1)
Pout
VCE = 6 V, IC (set) = 30 mA (RF OFF),
f = 460 MHz, Pin = 20 dBm
Output Power (2)
Pout
VCE = 6 V, IC (set) = 30 mA (RF OFF),
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f = 900 MHz, Pin = 20 dBm
C
Collector Efficiency (1)
VCE = 6 V, IC (set) = 30 mA (RF OFF),
f = 460 MHz, Pin = 20 dBm
C
Collector Efficiency (2)
VCE = 6 V, IC (set) = 30 mA (RF OFF),
f = 900 MHz, Pin = 20 dBm
Note Pulse measurement: PW  350 s, Duty Cycle  2%
hFE CLASSIFICATION
Rank
Marking
SQ
80 to 180
DI
SC
hFE Value
FB
Data Sheet PU10577EJ02V0DS
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NESG270034
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D
TYPICAL CHARACTERISTICS (T A = +25C, unless otherwise specified)
DI
<R>
Remark The graph indicates nominal characteristics.
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Data Sheet PU10577EJ02V0DS
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NESG270034
Remark The graph indicates nominal characteristics.
Data Sheet PU10577EJ02V0DS
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NESG270034
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Remark The graph indicates nominal characteristics.
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Data Sheet PU10577EJ02V0DS
NESG270034
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PA EVALUATION CIRCUIT TYPICAL CHARACTERISTICS
D
S-PARAMETERS
DI
SC
Remark The graph indicates nominal characteristics.
Data Sheet PU10577EJ02V0DS
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NESG270034
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EVALUATION CIRCUIT (f = 460 MHz)
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
SC
EVALUATION BOARD (f = 460 MHz)
Notes
1. 38  38 mm, t = 0.8 mm double sided copper clad glass epoxy PWB.
2. Back side: GND pattern
DI
3. Solder gold plated on pattern
4.
8
: Through holes
Data Sheet PU10577EJ02V0DS
NESG270034
COMPONENT LIST
Value
Purpose
C1
Murata
11 pF
1005
Input DC Block/Input RF Matching
C2
Murata
9.5 pF
1005
Input RF Matching
C3
Murata
39 pF
1005
Input DC Block/Output RF Matching
C4
Murata
10 000 pF
1005
RF GND
C5
Murata
10 000 pF
1005
RF GND
L1
Toko
390 nH
2012
RF Block/Input RF Matching
L2
Toko
47 nH
1608
L3
Toko
5.6 nH
2012
L4
Toko
5.1 nH
1608
R1
SSM
15 
1005
R2
SSM
10 
1005
UE
Size (TYPE)
D
Maker
RF Block/Output RF Matching
Input RF Matching
Output RF Matching
Improve Stability
Improve Stability
DI
SC
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Component
Data Sheet PU10577EJ02V0DS
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NESG270034
PACKAGE DIMENSIONS
DI
SC
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D
3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm)
8
Data Sheet PU10577EJ02V0DS