2SC5606-T1-A

NPN SILICON RF TRANSISTOR
NE66219 / 2SC5606
JEITA
Part No.
NPN SILICON RF TRANSISTOR FOR
LOW NOISE · HIGH-GAIN AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
FEATURES
• Suitable for high-frequency oscillation
• fT = 25 GHz technology adopted
• 3-pin ultra super minimold (19, 1608 PKG) package
<R>
ORDERING INFORMATION
Part Number
Order Number
Package
NE66219
NE66219-A
3-pin ultra super minimold
2SC5606
2SC5606-A
(19, 1608 PKG) (Pb-Free)
NE66219-T1
NE66219-T1-A
2SC5606-T1
2SC5606-T1-A
Quantity
Supplying Form
50 pcs (Non reel)
• 8 mm wide embossed taping
3 kpcs/reel
• Pin 3 (collector) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T A = +25C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
15
V
Collector to Emitter Voltage
VCEO
3.3
V
Emitter to Base Voltage
VEBO
1.5
V
IC
35
mA
115
mW
Collector Current
Total Power Dissipation
Ptot
Note
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150
C
Note Mounted on 1.08 cm 2  1.0 mm (t) glass epoxy substrate
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10781EJ01V0DS (1st edition)
(Previous No. P14658EJ3V0DS00)
Date Published August 2009 NS
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NE66219 / 2SC5606
ELECTRICAL CHARACTERISTICS (T A = +25C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
–
–
200
nA
Emitter Cut-off Current
IEBO
DC Current Gain
VEB = 1 V, IC = 0 mA
–
–
200
nA
Note 1
VCE = 2 V, IC = 5 mA
60
80
100
–
fT
VCE = 2 V, IC = 20 mA, f = 2 GHz
–
21
–
GHz
VCE = 2 V, IC = 20 mA, f = 2 GHz
10
12.5
–
dB
VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt
–
1.2
1.5
dB
hFE
RF Characteristics
Gain Bandwidth Product
S21e
Insertion Power Gain
Noise Figure
2
NF
Reverse Transfer Capacitance
Maximum Available Power Gain
Maximum Stable Power Gain
Note 2
VCB = 2 V, IE = 0 mA, f = 1 MHz
–
0.21
0.3
pF
MAG
Note 3
VCE = 2 V, IC = 20 mA, f = 2 GHz
–
14
–
dB
MSG
Note 4
VCE = 2 V, IC = 20 mA, f = 2 GHz
–
15
–
dB
Cre
Notes 1. Pulse measurement: PW  350 s, Duty Cycle  2%
2. Collector to base capacitance when the emitter grounded
3. MAG =
S21
(K –  (K2 – 1) )
S12
4. MSG =
S21
S12
hFE CLASSIFICATION
<R>
2
Rank
FB/YFB
Marking
UA
hFE
60 to 100
Data Sheet PU10781EJ01V0DS
NE66219 / 2SC5606
<R>
TYPICAL CHARACTERISTICS (Unless otherwise specified, T A = +25C)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10781EJ01V0DS
3
NE66219 / 2SC5606
Remark The graphs indicate nominal characteristics.
4
Data Sheet PU10781EJ01V0DS
NE66219 / 2SC5606
Remark The graph indicates nominal characteristics.
<R>
S-PARAMETERS
Data Sheet PU10781EJ01V0DS
5
NE66219 / 2SC5606
PACKAGE DIMENSIONS
3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) (UNIT: mm)
6
Data Sheet PU10781EJ01V0DS
NOTICE
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