µPA802T - California Eastern Laboratories

DATA SHEET
SILICON TRANSISTOR
µPA802T
HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
The µPA802T has built-in 2 low-voltage transistors which are designed
PACKAGE DRAWINGS
to amplify low noise in the VHF band to the UHF band.
(Unit: mm)
2.1±0.1
FEATURES
1.25±0.1
6
4
• A Mini Mold Package Adopted
5
1
2
3
1.3
0.65 0.65
|S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
X Y
2.0±0.2
NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
• High Gain
0.2 –0
+0.1
• Low Noise
PART NUMBER
QUANTITY
PACKING STYLE
µPA802T
Loose products
(50 PCS)
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
µPA802T-T1
+0.1
0.15 –0
0~0.1
ORDERING INFORMATION
0.7
0.9±0.1
• Built-in 2 Transistors (2 × 2SC4227)
PIN CONFIGURATION (Top View)
Taping products
(3 KPCS/Reel)
Remark To order evaluation samples, please contact your nearby sales office.
6
Q1
5
4
Q2
Part number for sample order: µPA802T-A (Unit sample quantity is 50 pcs.)
1
2
3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
65
mA
Total Power Dissipation
PT
150 in 1 element
200 in 2 elements Note
mW
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–65 to +150
˚C
Note 110 mW must not be exceeded in 1 element.
The information in this document is subject to change without notice.
Document No. ID-3636
(O.D. No. ID-9143)
Date Published April 1995 P
PIN CONNECTIONS
4. Emitter (Q2)
1. Collector (Q1)
5. Base (Q2)
2. Emitter (Q1)
6. Base (Q1)
3. Collector (Q2)
µPA802T
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cutoff Current
ICBO
VCB = 10 V, IE = 0
0.8
µA
Emitter Cutoff Current
IEBO
VEB = 1 V, IC = 0
0.8
µA
DC Current Gain
hFE
Gain Bandwidth Product
VCE = 3 V, IC = 7
fT
Feed-back Capacitance
Noise Figure
hFE Ratio
70
VCE = 3 V, IC = 7 mA, f = 1 GHz
Cre
Insertion Power Gain
mANote 1
VCB = 3 V, IE = 0, f = 1
4.5
7.0
GHz
MHzNote 2
|S21|2
VCE = 3 V, IC = 7 mA, f = 1 GHz
NF
VCE = 3 V, IC = 7 mA, f = 1 GHz
hFE1/hFE2
240
0.9
10
12
dB
1.4
VCE = 3 V, IC = 7 mA
A smaller value among
hFE of hFE1 = Q1, Q2
A larger value among
hFE of hFE2 = Q1, Q2
pF
1.7
dB
0.85
Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank
FB
GB
Marking
R34
R35
hFE Value
70 to 150
110 to 240
TYPICAL CHARACTERISTICS (TA = 25 °C)
IC - VCE Characteristics
PT - TA Characteristics
Free Air
200
2
Collector Current IC (mA)
Total Power Dissipation PT (mW)
25
El
em
en
ts
Pe
rE
100
in
To
ta
lem
en
l
t
0
50
100
20
A
160 µ
A
µ
0
4
1
120 µ A
15
100 µ A
80 µ A
60 µ A
40µ A
IB = 20 µ A
10
5
0.5
0
150
Ambient Temperature TA (°C)
IC - VBE Characteristics
hFE - IC Characteristics
20
200
VCE = 3 V
100
DC Current Gain hFE
Collector Current IC (mA)
VCE = 3 V
10
0
0.5
Base to Emitter Voltage VBE (V)
2
1.0
Collector to Emitter Voltage VCE (V)
1.0
50
20
10
0.5
1
5
10
Collector Current IC (mA)
50
µPA802T
Cre - VCB Characteristics
fr - IC Characteristics
10
Gain Bandwidth Product fT (GHz)
5.0
Feed-back Capacitance Cre (pF)
f = 1 MHz
2.0
1.0
0.5
0.2
1
Insertion Power Gain l S21e l 2 (dB)
15
2
5
10
20
6
4
2
1.0
5.0
10
50
Collector to Base Voltage VCB (V)
Collector Current IC (mA)
l S21e l 2 - IC Characteristics
l S21e l 2 - f Characteristics
25
VCE = 3 V
f = 1 GHz
10
5
0
0.5
8
0
0.5
50
Insertion Power Gain l S21e l 2 (dB)
0.1
VCE = 3 V
f = 1 GHz
1
5
10
50
VCE = 3 V
IC = 7 mA
20
15
10
5
0
0.1
0.2
0.5
1.0
2.0
5.0
Frequency f (GHz)
Collector Current IC (mA)
NF - IC Characteristics
5
VCE = 3 V
f = 1 GHz
Noise Figure NF (dB)
4
3
2
1
0
0.5
1.0
5.0
10
50
Collector Current IC (mA)
3
µPA802T
S-PARAMETERS
V CE = 3 V, I C = 7 mA, Z O = 50 Ω
FREQUENCY
MHz
MAG
S11
ANG
MAG
S21
ANG
MAG
S12
ANG
MAG
S22
ANG
100.000
200.000
300.000
400.000
500.000
600.000
700.000
800.000
900.000
1000.000
1100.000
1200.000
1300.000
1400.000
1500.000
1600.000
1700.000
1800.000
1900.000
2000.000
.804
.692
.581
.489
.419
.376
.342
.321
.305
.296
.289
.284
.282
.281
.283
.283
.285
.286
.289
.293
–23.8
–48.6
–70.3
–89.0
–104.9
–117.1
–128.6
–138.4
–147.3
–155.2
–162.2
–169.3
–175.3
179.0
173.8
168.6
163.8
159.9
155.4
151.8
11.631
10.839
9.722
8.519
7.434
6.468
5.729
5.115
4.630
4.207
3.879
3.595
3.349
3.133
2.945
2.780
2.631
2.514
2.390
2.293
154.8
137.5
123.8
112.9
104.1
97.5
91.8
86.7
82.5
78.5
74.8
71.4
68.1
64.8
61.9
58.8
56.2
53.3
50.5
47.8
.023
.040
.050
.060
.067
.075
.082
.089
.096
.104
.111
.119
.127
.136
.143
.151
.160
.168
.177
.186
74.8
64.1
59.9
56.7
55.9
55.6
55.7
56.3
56.1
56.4
56.0
56.4
56.2
56.0
55.4
55.0
54.4
53.9
53.3
52.5
.920
.791
.675
.597
.538
.497
.467
.443
.427
.412
.401
.393
.384
.379
.372
.367
.363
.359
.354
.351
–16.5
–27.7
–33.5
–37.0
–38.7
–40.0
–41.0
–41.7
–42.5
–43.6
–44.6
–45.8
–47.3
–48.8
–50.1
–51.8
–53.7
–55.4
–57.3
–59.2
V CE = 3 V, I C = 5 mA, Z O = 50 Ω
FREQUENCY
MHz
MAG
S11
ANG
MAG
S21
ANG
MAG
S12
ANG
MAG
S22
ANG
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
1600.0000
1700.0000
1800.0000
1900.0000
2000.0000
.818
.689
.594
.500
.457
.404
.377
.359
.342
.335
.326
.321
.317
.321
.318
.320
.323
.326
.331
.333
–29.4
–54.3
–73.1
–89.8
–102.8
–115.0
–124.4
–134.3
–141.5
–150.3
–155.9
–162.4
–167.2
–173.4
–177.5
176.6
173.2
167.8
165.6
161.4
14.580
12.120
10.142
8.340
7.300
6.211
5.496
4.908
4.450
4.018
3.750
3.410
3.181
2.995
2.802
2.665
2.533
2.369
2.275
2.196
156.2
137.5
124.6
114.4
107.5
101.0
96.8
91.4
88.1
84.7
81.4
78.1
75.6
72.5
69.8
67.3
66.1
63.0
61.0
59.2
.023
.040
.052
.063
.069
.081
.084
.091
.097
.100
.112
.115
.124
.131
.138
.149
.156
.162
.177
.183
79.9
65.1
55.0
58.5
56.4
54.9
59.5
58.4
58.4
61.2
61.8
61.4
62.3
63.9
63.6
66.4
65.3
65.9
65.4
64.5
.932
.824
.716
.620
.577
.525
.511
.471
.458
.440
.442
.417
.412
.411
.407
.400
.394
.394
.390
.384
–14.4
–23.4
–30.3
–32.2
–34.2
–35.1
–36.1
–36.2
–35.3
–36.5
–36.8
–37.8
–38.5
–39.9
–40.4
–41.1
–43.7
–44.3
–45.5
–47.6
ANG
161.6
145.3
133.4
122.4
114.1
107.1
102.2
96.0
92.6
88.1
84.2
79.8
77.4
73.5
71.3
68.0
65.3
63.0
61.4
58.2
MAG
.026
.049
.062
.073
.082
.091
.094
.099
.101
.107
.115
.113
.121
.126
.135
.137
.143
.151
.154
.163
ANG
82.5
63.8
58.7
56.0
53.4
49.7
51.8
51.2
52.9
50.9
53.7
56.6
54.9
56.4
56.4
60.0
59.5
59.4
62.6
62.0
MAG
.962
.895
.811
.732
.680
.624
.603
.568
.540
.523
.512
.500
.489
.483
.477
.477
.466
.461
.456
.464
V CE = 3 V, I C = 3 mA, Z O = 50 Ω
FREQUENCY
MHz
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
1600.0000
1700.0000
1800.0000
1900.0000
2000.0000
4
S11
MAG
.906
.810
.742
.638
.587
.524
.490
.460
.435
.427
.404
.399
.392
.392
.386
.380
.382
.389
.383
.387
S21
ANG
–22.7
–43.7
–60.6
–76.6
–89.8
–102.2
–111.4
–121.4
–129.9
–138.2
–144.9
–151.7
–157.9
–163.6
–169.1
–174.5
–179.7
176.1
172.5
168.3
MAG
9.710
8.541
7.695
6.580
5.934
5.148
4.627
4.181
3.827
3.443
3.199
2.989
2.779
2.638
2.443
2.344
2.239
2.113
2.025
1.922
S12
S22
ANG
–10.6
–18.3
–25.8
–27.7
–31.2
–33.5
–34.4
–35.0
–35.7
–36.7
–36.8
–38.6
–39.2
–40.4
–41.8
–42.4
–44.4
–44.9
–46.9
–48.3
µPA802T
V CE = 3 V, I C = 1 mA, Z O = 50 Ω
FREQUENCY
MHz
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
1600.0000
1700.0000
1800.0000
1900.0000
2000.0000
S11
MAG
1.009
.955
.937
.864
.838
.775
.745
.708
.670
.649
.621
.608
.587
.587
.573
.559
.562
.557
.557
.551
S21
ANG
–14.5
–29.7
–42.6
–56.2
–67.3
–79.3
–88.5
–99.1
–107.9
–116.8
–124.0
–131.8
–138.5
–144.5
–152.6
–157.1
–164.2
–168.9
–173.9
–178.6
MAG
3.544
3.359
3.277
3.034
2.891
2.674
2.485
2.338
2.177
2.052
1.914
1.819
1.713
1.628
1.533
1.464
1.421
1.350
1.296
1.240
S12
ANG
168.8
156.3
147.1
136.6
128.6
120.0
114.2
106.8
101.4
96.0
90.8
86.0
82.4
77.7
73.4
70.3
67.2
64.7
61.1
58.0
MAG
.027
.055
.073
.091
.107
.116
.125
.127
.132
.135
.131
.129
.130
.128
.127
.124
.120
.122
.122
.124
S22
ANG
78.6
73.6
63.4
57.7
51.1
46.6
45.2
41.2
40.2
37.2
36.6
35.4
35.2
36.1
36.0
37.5
39.1
43.3
45.2
48.5
MAG
.994
.969
.947
.898
.865
.824
.803
.776
.740
.723
.719
.700
.691
.681
.662
.660
.658
.658
.641
.643
ANG
–5.6
–10.1
–15.9
–18.8
–22.1
–25.8
–27.5
–29.7
–31.5
–33.7
–34.2
–36.3
–37.6
–39.2
–40.7
–42.7
–44.0
–46.0
–47.8
–50.1
5
NOTICE
1.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and
application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California
Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits,
software, or information.
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not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
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