NE5511279A DS

SILICON POWER MOS FET
NE5511279A
D
7.5 V OPERATION SILICON RF POWER LD-MOS FET
FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
DESCRIPTION
UE
The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the
transmission power amplifier for 7.5 V Radio Systems. Dies are manufactured using our NEWMOS1 technology
and housed in a surface mount package. This device can deliver 40.0 dBm output power with 48% power added
efficiency at 900 MHz under the 7.5 V supply voltage.
FEATURES
• High output power
: Pout = 40.0 dBm TYP. (f = 900 MHz, VDS = 7.5 V, Pin = 27 dBm, IDset = 400 mA)
O
NT
IN
: Pout = 40.5 dBm TYP. (f = 460 MHz, VDS = 7.5 V, Pin = 25 dBm, IDset = 400 mA)
: add = 48% TYP. (f = 900 MHz, VDS = 7.5 V, Pin = 27 dBm, IDset = 400 mA)
• High power added efficiency
: add = 50% TYP. (f = 460 MHz, VDS = 7.5 V, Pin = 25 dBm, IDset = 400 mA)
• High linear gain
: GL = 15.0 dB TYP. (f = 900 MHz, VDS = 7.5 , Pin = 5 dBm V, IDset = 400 mA)
: GL = 18.5 dB TYP. (f = 460 MHz, VDS = 7.5 V, Pin = 5 dBm, IDset = 400 mA)
• Surface mount package
: 5.7  5.7  1.1 mm MAX.
• Single supply
: VDS = 2.8 to 8.0 V
APPLICATIONS
• 460 MHz Radio Systems
• 900 MHz Radio Systems
ORDERING INFORMATION
Part Number
NE5511279A-T1
Package
Marking
79A
W3
Supplying Form
• 12 mm wide embossed taping
SC
• Gate pin face the perforation side of the tape
NE5511279A-T1A
• Qty 1 kpcs/reel
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
DI
Part number for sample order: NE5511279A-A
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10322EJ01V0DS (1st edition)
Date Published June 2003 CP(K)
NE5511279A
ABSOLUTE MAXIMUM RATINGS (T A = +25C)
Ratings
Unit
20
V
VGS
6.0
V
ID
3.0
A
Total Power Dissipation
Ptot
20
W
Channel Temperature
Tch
125
C
Storage Temperature
Tstg
55 to +125
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Symbol
VDS
Note
Note VDS will be used under 12 V on RF operation.
RECOMMENDED OPERATING CONDITIONS
Symbol
Test Conditions
C
MIN.
O
NT
IN
Parameter
UE
Parameter
D
Operation in excess of any one of these parameters may result in permanent damage.
TYP.
MAX.
Unit
Drain to Source Voltage
VDS

7.5
8.0
V
Gate to Source Voltage
VGS
0
2.0
3.0
V
Drain Current
Duty Cycle  50%, Ton  1 s

2.5
3.0
A
Pin
f = 900 MHz, VDS = 7.5 V

27
30
dBm
DI
SC
Input Power
ID
2
Data Sheet PU10322EJ01V0DS
NE5511279A
ELECTRICAL CHARACTERISTICS
(T A = +25C, unless otherwise specified, using our standard test fixture)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
IGSS
VGS = 6.0 V


100
nA
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
IDSS
VDS = 8.5 V


100
nA
Gate Threshold Voltage
Vth
VDS = 4.8 V, IDS = 1.5 mA
Thermal Resistance
Rth
Channel to Case

Transconductance
gm
VDS = 3.5 V, IDS = 900 mA

IDSS = 15  A
BVDSS
Output Power
Pout
Drain Current
ID
Power Added Efficiency
Output Power
Drain Current
GL
Power Added Efficiency
Linear Gain
2.0
V
5

C/W
2.3

S
20
24

V
38.5
40.0

dBm

2.5

A
42
48

%

15.0

dB
f = 460 MHz, VDS = 7.5 V,

40.5

dBm
Pin = 25 dBm,

2.75

A
IDset = 400 mA (RF OFF)

50

%

18.5

dB
f = 900 MHz, VDS = 7.5 V,
Pin = 27 dBm,
IDset = 400 mA (RF OFF)
Note
Pout
O
NT
IN
Linear Gain
add
1.5
UE
Drain to Source Breakdown Voltage
1.0
D
Gate to Source Leak Current
ID
add
GL
Note
Note Pin = 5 dBm
DC performance is 100% testing. RF performance is testing several samples per wafer.
DI
SC
Wafer rejection criteria for standard devices is 1 reject for several samples.
Data Sheet PU10322EJ01V0DS
3
NE5511279A
O
NT
IN
UE
D
TYPICAL CHARACTERISTICS (T A = +25C, VDS = 7.5 V, IDset = 400 mA)
SC
Remark The graphs indicate nominal characteristics.
DI
S-PARAMETERS
4
Data Sheet PU10322EJ01V0DS
NE5511279A
PACKAGE DIMENSIONS
O
NT
IN
UE
D
79A (UNIT: mm)
DI
SC
79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm)
Data Sheet PU10322EJ01V0DS
5
NE5511279A
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
VPS
: 260C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220C or higher
: 60 seconds or less
Preheating time at 120 to 180C
: 12030 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (package surface temperature)
: 215C or below
Time at temperature of 200C or higher
: 25 to 40 seconds
Maximum number of reflow processes
: 3 times
: 0.2%(Wt.) or below
Peak temperature (molten solder temperature)
: 260C or below
Preheating temperature (package surface temperature)
: 120C or below
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (pin temperature)
: 350C or below
Soldering time (per pin of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
DI
SC
Caution Do not use different soldering methods together (except for partial heating).
6
Data Sheet PU10322EJ01V0DS
WS260
: 10 seconds or less
O
NT
IN
Partial Heating
VP215
: 30 to 60 seconds
Maximum chlorine content of rosin flux (% mass)
Time at peak temperature
IR260
D
Peak temperature (package surface temperature)
Preheating time at 120 to 150C
Wave Soldering
Condition Symbol
UE
Infrared Reflow
Soldering Conditions
HS350-P3