UPC2756T - California Eastern Laboratories

3 V SILICON MMIC L-BAND
FREQUENCY DOWN CONVERTER
D
UPC2756T
FEATURES
INTERNAL BLOCK DIAGRAM
• WIDE BAND OPERATION: RF = 0.1 to 2.0 GHz
• LOW CURRENT CONSUMPTION: 6 mA
• SUPER SMALL T06 PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
DESCRIPTION
IF
Output
RF
Input
IN
The UPC2756T is a silicon monolithic integrated circuit which
is manufactured using the NESAT III process. The NESAT III
process produces transistors with fT approaching 20 GHz.
This device was designed as the first down converter for GPS
and wireless communications. Operating on a 3 volt supply,
this IC is ideally suited for hand held portable designs.
UE
• ON BOARD OSCILLATOR
LO1
LO2
VCC
GND
NT
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
ELECTRICAL CHARACTERISTICS (TA = 25°C, ZL = Zs = 50 Ω, Vcc = 3V)
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
SC
O
SYMBOLS
UPC2756T
T06
UNITS
MIN
TYP
MAX
6.0
8.0
ICC
Circuit Current (no signal)
mA
3.5
fRF
RF Frequency Response
(3 dB down from the gain at fRF = 900 MHz, fIF = 150 MHz)
GHz
0.1
fIF
IF Frequency Response
(3 dB down from the gain at fRF = 900 MHz, fIF = 150 MHz)
MHz
10
CG
Conversion Gain1
fRF = 900 MHz, fIF = 150 MHz
fRF = 1.6 GHz, fIF = 20 MHz
dB
dB
11
11
NF
Noise Figure
fRF = 900 MHz, fIF = 150 MHz
fRF = 1.6 GHz, fIF = 20 MHz
dB
dB
Saturated Output Power2
OIP3
SSB Output 3rd Order Intercept Point
fRF = 0.8~2.0 GHz, fIF = 100 MHz
DI
PSAT
fRF = 900 MHz, fIF = 150 MHz
fRF = 1.6 GHz, fIF = 20 MHz
ISO
LO Leakage, fLO = 0.8 ~2.0 GHz
PN
Phase Noise3, fOSC = 1.9 GHz
RTH (J-A)
at RF pin
at IF pin
Thermal Resistance (Junction to Ambient)
Free Air
Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB
dBm
dBm
-11
-15
2.0
300
14
14
17
17
10
13
13
16
-8
-12
dBm
0
dBm
dBm
-35
-23
dBc/Hz
-68
°C/W
°C/W
620
230
Notes:
1. PRF = -40 dBm.
2. PRF = -10 dBm.
3. See Application Circuit.
California Eastern Laboratories
UPC2756T
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
VCC
PARAMETERS
RATINGS
V
5.5
UNITS
MIN
TYP MAX
mW
280
VCC
Supply Voltage
V
2.7
3.0
3.3
TOP
Operating Temperature
°C
-40
+25
+85
Supply Voltage
Dissipation2
RECOMMENDED
OPERATING CONDITIONS
UNITS
SYMBOLS
PT
Total Power
TOP
Operating Temperature
°C
-40 to +85
TSTG
Storage Temperature
°C
-55 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB (TA = +85°C).
PARAMETERS
D
SYMBOLS
TEST CIRCUIT
0.1 µF
UE
0.1 µF
3
LO2 4
LO1
C2
VCC 5
C4
2
GND
1
RFIN IFOUT 6
0.1 µF
RF INPUT
LO INPUT
C3
0.1 µF
3V
IF OUTPUT
0.1 µF
C5
IN
C1
TYPICAL PERFORMANCE CURVES (TA = 25°C unless otherwise specified)
CIRCUIT CURRENT vs. TEMPERATURE
CIRCUIT CURRENT vs. VOLTAGE
10
10
NT
No input signal
VCC = 3.0V
6
4
2
Circuit Current, Icc (mA)
8
8
SC
O
Circuit Current, Icc (mA)
No input
signal
1
2
3
4
5
4
2
0
0
0
6
-40
6
Supply Voltage, Vcc (V)
CONVERSION GAIN AND NOISE
FIGURE vs. RF INPUT FREQUENCY
15
VCC = 3.0V
VCC = 2.7V
20
10
PRFin = -55 dbm
PLOin = -10 dbm
fIF = 150 MHZ
(Low-Side Lo)
NF
15
VCC = 3.0V
VCC = 2.7V
10
+40
+60
+80
+100
VCC = 3.0V
PRFin = -55 dBm
PLOin = -10 dBm
fRF = 1.6 GHz
IF coupling = 0.1 uF
25
20
15
10
5
VCC = 3.3V
5
0.5
+20
30
Conversion Gain, CG (dB)
DI
Conversion Gain, CG (dB)
VCC = 3.3V
CG
0
CONVERSION GAIN
vs. IF OUTPUT FREQUENCY
25
20
-20
Operating Temperature, TOP (°C)
1.0
1.5
RF Input Frequency, fRF (GHz)
2.0
0
1
2
5
10
20
50
100
IF Output Frequency, fIF (GHz)
300
UPC2756T
TYPICAL PERFORMANCE CURVES (TA = 25°C)
LO LEAKAGE AT RF PIN
vs. LO FREQUENCY
LO LEAKAGE AT IF PIN
Vs. LO FREQUENCY
0
VCC = 3.0 V
PLOIN = -10 dBm
-10
-20
-20
-30
UE
-30
VCC = 3.0V
PLOIN = -10 dBm
-10
D
LO Leakage at IF Output Pin (dBM)
LO Leakage at RF Input Pin (dBm)
0
-40
-50
-40
-50
-60
-60
1.4
1.6
1.8
0.8
2.0
1.0
IN
NT
UPC2756T SCATTERING PARAMETERS
5
1
1
3
2
4
SC
O
2
3
5
1.4
LO Input Frequency (GHz)
LO Input Frequency, fLO (GHz)
6
1.2
4
RF Port
Vcc = 3 V
1: 100 MHz 330.7 Ω — j861.6 Ω
2: 500 MHz 38.8 Ω — j194.3 Ω
3: 900 MHz 25.5 Ω — j107.6 Ω
4: 1500 MHz 20.5 Ω — j60.7 Ω
5. 1900 MHz 17.9 Ω — j44.2 Ω
6. 3000 MHz 19.5 Ω — j16.3 Ω
1: 50 MHz 21.4 Ω + j2.4 Ω
2: 80 MHz 21.8 Ω + j5.5 Ω
3: 130 MHz 23.1 Ω + j9.4Ω
4: 240 MHz 27.4 Ω + j16.3 Ω
5. 300 MHz 30.6 Ω + j19.1 Ω
DI
RF Port
Vcc = 3 V
5-190
1.6
UPC2756T
OUTLINE DIMENSIONS (Units in mm)
LEAD CONNECTIONS
(Bottom View)
(Top View)
PACKAGE OUTLINE T06
3
+0.2
1.5 -0.1
2
4
1.9±0.2 2
0.95
5
1
6
-0.05
0.3 +0.10
0 to 0.1
NT
Note:
All dimensions are typical unless otherwise specified.
15 K Ω
D1
BIAS
L
R2
C3
0.1µF
SC
O
LO1
LO2
4
2
GND
Vcc
5
1
RFIN
IFOUT
3V
6
C1
0.1µF
C5
* Recommended Varactor Diodes:
1.0
MIN
Alpha SMV1204-4,
Toshiba 1SV186
or equivalent
ORDERING INFORMATION
DI
EXCLUSIVE NORTH AMERICAN AGENT FOR
3
0.1µF
6 0.5 MIN
1.0
MIN
15 K Ω
0.1µF
5
1
VARACTOR*
DIODES
5nH
30 nH
R1
C2
0.95
2
1
0.1µF
4
3
6
APPLICATION CIRCUIT EXAMPLE
RECOMMENDED P.C.B. LAYOUT (Units in mm)
3.10
2
1. RF INPUT
2. GND
3. LO1
4. LO2
5. VCC
6. IF OUTPUT
0.13±0.1
0.8
6
5
IN
+0.2
1.1 -0.1
1
5
3
UE
3
0.95
2.9±0.2
4
4
D
C1W
+0.2
2.8 -0.3
PART NUMBER
QTY
UPC2756T-E3
3K/Reel
Note:
Embossed Tape, 8 mm wide,
Pins 1, 2, 3 are in tape pull-out direction.
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
PRINTED IN USA ON RECYCLED PAPER -1/97
DATA SUBJECT TO CHANGE WITHOUT NOTICE
5-191