NE85630

A Business Partner of Renesas Electronics Corporation.
Preliminary
NE85630 / 2SC4226
JEITA
Part No.
Data Sheet
R09DS0022EJ0200
Rev.2.00
Jun
29, 2011
NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold
NPN Silicon RF Transistor
DESCRIPTION
The NE85630 / 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.
It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin
super minimold package.
FEATURES
• Low noise : NF = 1.2 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
• High gain : ⏐S21e⏐2 = 9 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
• 3-pin super minimold package
<R>
ORDERING INFORMATION
Part Number
Order Number
NE85630
2SC4226
NE85630-A
2SC4226-A
NE85630-T1
2SC4226-T1
NE85630-T1-A
2SC4226-T1-A
Package
Quantity
Supplying Form
3-pin super
50 pcs (Non reel)
• 8 mm wide embossed taping
Minimold
(Pb-Free)
3 kpcs/reel
• Pin 3 (Collector) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3
V
IC
100
mA
150
mW
Collector Current
Total Power Dissipation
Ptot
Note
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Free air
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0022EJ0200 Rev.2.00
Jun 29, 2011
Page 1 of 6
A Business Partner of Renesas Electronics Corporation.
NE85630 / 2SC4226
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 10 V, IE = 0
−
−
1.0
μA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0
−
−
1.0
μA
VCE = 3 V, IC = 7 mA
40
110
250
–
VCE = 3 V, IC = 7 mA
3.0
4.5
–
GHz
DC Current Gain
hFE
Note 1
RF Characteristics
Gain Bandwidth Product
fT
Insertion Power Gain
⏐S21e⏐
VCE = 3 V, IC = 7 mA, f = 1 GHz
7
9
–
dB
NF
VCE = 3 V, IC = 7 mA, f = 1 GHz
−
1.2
2.5
dB
VCB = 3 V, IE = 0, f = 1 MHz
−
0.7
1.5
pF
2
Noise Figure
Reverse Transfer Capacitance
Cre
Note 2
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
<R>
hFE CLASSIFICATION
Rank
R23/Y23
R24/Y24
R25/Y25
Marking
R23
R24
R25
hFE Value
40 to 80
70 to 140
125 to 250
R09DS0022EJ0200 Rev.2.00
Jun 29, 2011
Page 2 of 6
A Business Partner of Renesas Electronics Corporation.
NE85630 / 2SC4226
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
200
150
100
50
25
50
75
100
125
150
f = 1 MHz
2
1
0.5
0.2
0.1
1
2
5
10
20
50
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
VCE = 3 V
10
0
0.5
200
160
μA
140
20
120
100
15
IB = 20 μ A
5
10
Collector to Emitter Voltage VCE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
50
20
1
5
10
50
Collector Current IC (mA)
μA
40 μ A
5
20
μA
60 μ A
10
Base to Emitter Voltage VBE (V)
VCE = 3 V
μA
80 μ A
0
1
100
10
0.5
5
Ambient Temperature TA (˚C)
Collector Current IC (mA)
20
Collector Current IC (mA)
Reverse Transfer Capacitance Cre (pF)
Free Air
0
DC Current Gain hFE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Gain Bandwidth Product fT (GHz)
Total Power Dissipation Ptot (mW)
250
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
VCE = 3 V
f = 1 GHz
10
5
2
1
0.5
1
5
10
50
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
R09DS0022EJ0200 Rev.2.00
Jun 29, 2011
Page 3 of 6
A Business Partner of Renesas Electronics Corporation.
NE85630 / 2SC4226
15
VCE = 3 V
IC = 7 mA
20
Insertion Power Gain |S21e|2 (dB)
Insertion Power Gain |S21e|2 (dB)
24
INSERTION POWER GAIN
vs. FREQUENCY
16
12
8
4
0
0.1
0.2
0.5
1
2
5
VCE = 3 V
f = 1 GHz
10
5
0
0.5
1
5
10
50
100
Collector Current IC (mA)
Frequency f (GHz)
NOISE FIGURE vs.
COLLECTOR CURRENT
6
VCE = 3 V
f = 1 GHz
5
Noise Figure NF (dB)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
4
3
2
1
0
0.5
1
5
10
50
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
R09DS0022EJ0200 Rev.2.00
Jun 29, 2011
Page 4 of 6
A Business Partner of Renesas Electronics Corporation.
NE85630 / 2SC4226
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of
the parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www2.renesas.com/microwave/en/download.html
R09DS0022EJ0200 Rev.2.00
Jun 29, 2011
Page 5 of 6
A Business Partner of Renesas Electronics Corporation.
NE85630 / 2SC4226
PACKAGE DIMENSIONS
3-PIN SUPER MINIMOLD (UNIT: mm)
2.1±0.1
3
1
0.3+0.1
–0
2
0.65 0.65
Marking
0 to 0.1
0.9±0.1
0.15+0.1
–0.05
0.3
2.0±0.2
0.3+0.1
–0
1.25±0.1
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
(EIAJ : SC-70)
R09DS0022EJ0200 Rev.2.00
Jun 29, 2011
Page 6 of 6
NE85630 / 2SC4226 Data Sheet
Revision History
Rev.
−
2.00
Date
Dec 2003
Jun 29, 2011
Description
Summary
Page
−
p.1
p.2
Previous No. :PU10450EJ01V0DS
Modification of ORDERING INFORMATION
Modification of hFE CLASSIFICATION
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