UPC8181TB

BIPOLAR ANALOG INTEGRATED CIRCUIT
UPC8181TB
D
3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
FOR MOBILE COMMUNICATIONS
FEATURES
NOISE FIGURE, POWER GAIN vs.
FREQUENCY
UE
• SUPPLY VOLTAGE:
VCC = 2.7 to 3.3 V
30
• CIRCUIT CURRENT:
ICC = 23.0 mA TYP at VCC = 3.0 V
VCC = 3.0 V
• MEDIUM OUTPUT POWER:
PO(1dB) = +8.0 dBm TYP at f = 0.9 GHz
PO(1dB) = +7.0 dBm TYP at f = 1.9 GHz
PO(1dB) = +7.0 dBm TYP at f = 2.4 GHz
15
5
10
4
5
3
0
NF
0.1
0.3
NT
• UPPER LIMIT OPERATING FREQUENCY:
fU = 4.0 GHz TYP at 3 dB bandwidth (Standard value)
• HIGH-DENSITY SURFACE MOUNTING:
6-pin super minimold package (2.0 x 1.25 x 0.9 mm)
GP
20
IN
• POWER GAIN:
GP = 19.0 dB TYP at f = 0.9 GHz
GP = 21.0 dB TYP at f = 1.9 GHz
GP = 22.0 dB TYP at f = 2.4 GHz
Gain, GP (dB)
25
1.0
3.0
Frequency, f (GHz)
APPLICATIONS
DESCRIPTION
The UPC8181TB is a silicon Monolithic Microwave Integrated Circuit designed as an amplifier for mobile communications. This IC operates at 3 volts. The medium output power
is suitable for RF-TX of mobile communication systems.
• Buffer amplifiers for 1.9 GHz to 2.4 GHz mobile
communication systems.
SC
O
This IC is manufactured using the 30 GHz f max UHS0 (Ultra
High Speed process) silicon bipolar process. This process
uses direct silicon nitride passivation film and gold electrodes.
These materials can protect the chip surface from pollution and
prevent corrosion/migration. This IC has excellent performance, uniformity, and reliability.
Stringent quality assurance and test procedures ensure
the highest reliability and performance.
ELECTRICAL CHARACTERISTICS
(TA = 25°C, VCC = VOUT = 3.0 V, ZS = ZL = 50Ω)
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
DI
SYMBOLS
UPC8181TB
S06
UNITS
MIN
TYP
MAX
ICC
Circuit Current (no signal)
mA
–
23.0
30.0
GP
Power Gain,
f = 0.9 GHz
f = 1.9 GHz
f = 2.4 GHz
dB
16.0
18.0
19.0
19.0
21.0
22.0
22.0
24.0
25.0
NF
Noise Figure,
f = 0.9 GHz
f = 1.9 GHz
f = 2.4 GHz
dB
–
–
–
4.5
4.5
4.5
6.0
6.0
6.0
fU
ISL
Upper Limit Operating Frequency, 3 dB down below from gain at f = 0.1 GHz
Isolation,
f = 0.9 GHz
f = 1.9 GHz
f = 2.4 GHz
GHz
–
4.0
–
dB
28.0
27.0
26.5
33.0
32.0
31.5
–
–
–
UPC8181TB
ELECTRICAL CHARACTERISTICS (cont.)
(TA = 25°C, VCC = VOUT = 3.0 V, ZS = ZL = 50Ω)
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
PO(1dB)
UNITS
1 dB Gain Compression Output Level,
f = 0.9 GHz
f = 1.9 GHz
f = 2.4 GHz
Saturated Output Power Level,
f = 0.9 GHz, PIN = -5 dBm
f = 1.9 GHz, PIN = -5 dBm
f = 2.4 GHz, PIN = -5 dBm
Input Return Loss,
f = 0.9 GHz
f = 1.9 GHz
f = 2.4 GHz
RLout
Output Return Loss,
f = 0.9 GHz
f = 1.9 GHz
f = 2.4 GHz
ABSOLUTE MAXIMUM RATINGS1
VCC
PARAMETERS
Supply
ICC
Voltage2
Power Dissipation3
TA
Operating Ambient
Temperature
TSTG
Storage Temperature
Input Power4
3.6
mA
60
mW
270
°C
-40 to +85
°C
-55 to +150
dBm
+10
SC
O
PIN
RATINGS
V
Total Cicuit Current
PD
UNITS
+8.0
+7.0
+7.0
–
–
–
–
–
–
+9.5
+9.0
+9.0
–
–
–
dB
4.5
7.5
8.0
7.5
10.5
11.0
–
–
–
dB
6.0
7.0
9.0
9.0
10.0
12.0
–
–
–
dBm
RECOMMENDED
OPERATING CONDITIONS
SYMBOLS
PARAMETERS
VCC
Voltage1
NT
SYMBOLS
MAX
+5.5
+4.5
+4.5
IN
RLin
TYP
UE
PO(SAT)
dBm
MIN
D
SYMBOLS
UPC8181TB
S06
Supply
UNITS MIN
V
TYP MAX
2.7
3.0
Note:
1. Same voltage applied to pins 4 and 6
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage.
2. TA = 25°C, pins 4 and 6.
3. Mounted on a double-sided copper clad 50x50x1.6 mm epoxy
glass PWB, TA = +85°C.
4. TA = +25 °C
TYPICAL PERFORMANCE CURVES (Unless otherwise specified, TA = 25˚C)
CIRCUIT CURRENT vs.
OPERATING AMBIENT TEMPERATURE
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
40
40
No Signal
25
20
15
10
5
No Signal
VCC = 3.0 V
35
Circuit Current, ICC (mA)
30
DI
Circuit Current, ICC (mA)
35
30
25
20
15
10
5
0
0
1
2
3
Supply Voltage, VCC (V)
4
0
-60
-40
-20
0
+20
+40
+60
+80
+100
Operating Ambient Temperature, TA (°C)
3.3
UPC8181TB
TYPICAL PERFORMANCE CURVES (Unless otherwise specified, TA = 25˚C)
INPUT RETURN LOSS, OUTPUT RETURN LOSS vs.
FREQUENCY
ISOLATION vs. FREQUENCY
0
-5
VCC = 3.0 V
-30
-40
-10
RLout
-15
0.1
0.3
1.0
3.0
0.1
Frequency, f (GHz)
+10
+5
0
-5
-10
-15
SC
O
-20
-40
-30
-20
-10
0
+5
0
-5
-10
-15
-20
-30
-50
+10
OUTPUT POWER vs. INPUT POWER
+5
0
-5
-10
-15
-20
-25
-30
-50
-40
-30
-20
-10
Input Power, PIN (dBm)
0
+10
-30
-20
-10
0
+10
SATURATED OUTPUT POWER vs.
FREQUENCY
+12
Saturated Output Power, PO(sat) (dBm)
f = 2.4 GHz
VCC = 3.0 V
DI
Output Power, POUT (dBm)
+10
-40
Input Power, PIN (dBm)
Input Power, PIN (dBm)
+15
f = 1.9 GHz
VCC = 3.0 V
-25
-25
-30
-50
3.0
IN
NT
f = 0.9 GHz
VCC = 3.0 V
+10
1.0
OUTPUT POWER vs. INPUT POWER
+15
+15
0.3
Frequency, f (GHz)
OUTPUT POWER vs. INPUT POWER
Output Power, POUT (dBm)
RLin
UE
-20
Output Power, POUT (dBm)
Isolation, ISOL (dB)
-10
D
Input Return Loss, RLIN (dB)
Output Return Loss, RLOUT (dBm)
VCC = 3.0 V
VCC = 3.3 V
+10
VCC = 3.0 V
+8
VCC = 2.7 V
+6
+4
+2
0
0.1
0.3
1.0
Frequency, f (GHz)
3.0
UPC8181TB
TYPICAL PERFORMANCE CURVES (Unless otherwise specified, TA = 25˚C)
THIRD ORDER INTERMODULATION DISTORTION vs.
OUTPUT POWER OF EACH TONE
THIRD ORDER INTERMODULATION DISTORTION vs.
OUTPUT POWER OF EACH TONE
0
f1 = 900 MHz
f2 = 902 MHz
-10
-20
VCC = 3.0 V
-40
-50
-60
-15
-10
-5
0
+5
+10
-20
VCC = 3.0 V
-30
-40
-50
-10
-5
0
+5
+10
Output Power of Each Tone, POUT (dBm)
DI
-60
-15
-30
-40
-50
-10
IN
NT
-10
SC
O
Thirf Order Intermodulation Distortion,
IM3 (dBc)
f1 = 2400 MHz
f2 = 2402 MHz
VCC = 3.0 V
-5
0
+5
+10
Output Power of Each Tone, POUT (dBm)
Output Power of Each Tone, POUT (dBm)
0
-20
-60
-15
+15
THIRD ORDER INTERMODULATION DISTORTION vs.
OUTPUT POWER OF EACH TONE
-10
UE
-30
f1 = 1900 MHz
f2 = 1902 MHz
D
Thirf Order Intermodulation Distortion,
IM3 (dBc)
Third Order Intermodulation Distortion,
IM3 (dBc)
0
UPC8181TB
D
TYPICAL SCATTERING PARAMETERS (TA = 25˚C)
0.1 G
3.0 G
1.0 G
UE
4.0 G
0.1 G
2.0 G
3.0 G
1.0 G
4.0 G
2.0 G
Coordinates in Ohms
Frequency in GHz
VCC = VOUT = 3.0 V, ICC = 23
S22
VCC = VOUT = 3.0 V, ICC = 23.0 mA
FREQUENCY
S11
S21
IN
S11
S12
MAG
ANG
MAG
ANG
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
0.452
0.467
0.470
0.460
0.438
0.415
0.397
0.395
0.399
0.404
0.396
0.394
0.385
0.368
0.347
0.335
0.327
0.328
0.327
0.325
0.316
0.295
0.288
0.291
0.303
0.317
0.335
0.349
0.347
0.345
0.341
0.331
0.323
0.311
0.302
0.289
0.266
0.253
0.238
0.238
0.244
-2.7
-5.7
-7.5
-9.3
-11.5
-14.7
-18.6
-22.4
-25.6
-28.1
-29.0
-28.5
-28.0
-28.8
-29.5
-30.9
-31.5
-31.2
-29.4
-29.4
-28.5
-29.4
-30.8
-34.1
-38.3
-41.1
-41.3
-41.0
-39.4
-43.2
-45.4
-47.9
-49.8
-52.1
-52.6
-54.9
-56.5
-61.5
-65.6
-70.7
-74.0
9.078
9.098
9.143
9.237
9.284
9.442
9.670
9.897
10.166
10.496
10.903
11.329
11.895
12.145
12.356
12.670
12.966
13.410
13.722
14.151
14.412
14.747
15.144
15.463
15.264
15.137
14.774
14.176
13.710
12.808
12.313
11.587
11.003
10.638
10.228
9.985
9.543
9.184
8.816
8.488
8.186
-2.0
-4.9
-6.9
-10.1
-11.9
-14.6
-17.0
-19.7
-22.7
-26.0
-29.0
-32.8
-37.9
-42.4
-47.6
-51.8
-56.4
-61.4
-66.8
-72.3
-78.1
-84.1
-90.3
-97.4
-104.6
-112.6
-119.8
-127.7
-133.7
-139.8
-146.0
-149.3
-154.5
-157.7
-162.0
-166.5
-170.1
-174.5
-177.7
178.2
174.3
SC
O
DI
S22
MAG
ANG
MAG
ANG
K
0.020
0.021
0.021
0.021
0.021
0.022
0.022
0.022
0.023
0.022
0.023
0.025
0.025
0.024
0.025
0.026
0.024
0.026
0.027
0.026
0.028
0.027
0.029
0.029
0.029
0.028
0.029
0.031
0.029
0.029
0.031
0.029
0.031
0.031
0.029
0.030
0.030
0.031
0.030
0.032
0.032
4.3
4.2
8.2
9.8
11.4
8.1
11.5
16.3
14.5
13.4
18.0
16.6
17.4
22.0
24.3
20.6
21.4
23.2
27.5
24.6
26.4
26.5
27.5
27.1
27.7
25.5
25.5
25.0
32.9
24.8
28.9
31.6
31.2
29.5
32.5
31.4
39.6
34.1
36.2
38.9
37.0
0.338
0.346
0.344
0.335
0.328
0.337
0.350
0.354
0.342
0.331
0.332
0.353
0.376
0.374
0.361
0.356
0.356
0.366
0.367
0.369
0.363
0.361
0.359
0.346
0.323
0.303
0.294
0.299
0.304
0.317
0.325
0.318
0.315
0.307
0.302
0.303
0.301
0.294
0.275
0.270
0.266
-1.6
-2.1
-1.0
-2.7
-4.8
-7.5
-7.9
-6.8
-6.0
-7.9
-10.8
-13.4
-14.3
-15.0
-16.3
-19.3
-22.0
-23.9
-25.6
-28.5
-31.7
-35.4
-37.1
-39.0
-40.6
-43.1
-43.9
-43.0
-41.3
-44.9
-46.7
-48.7
-52.1
-56.1
-60.0
-63.7
-65.1
-67.5
-68.8
-71.0
-75.1
1.89
1.73
1.72
1.75
1.84
1.73
1.72
1.69
1.56
1.60
1.48
1.33
1.26
1.28
1.28
1.22
1.29
1.17
1.11
1.11
1.05
1.08
1.02
1.01
1.04
1.09
1.07
1.03
1.09
1.15
1.13
1.25
1.27
1.32
1.44
1.47
1.54
1.55
1.71
1.70
1.75
NT
GHz
UPC8181TB
PIN FUNCTIONS (Pin Voltage is measured at VCC = 3.0 V)
Applied
Voltage
Pin
Voltage
1
INPUT
—
0.99
2
3
5
GND
0
—
4
VCC
2.7 to 3.3
—
Equivalent Circuit
Signal input pin. An internal matching circuit,
configured with resistors, enables 50 Ω connection over a wide band. A multi- feedback circuit is
designed to cancel the deviations of hFE and
resistance. This pin must be coupled to signal
source with capacitor for DC cut.
GND pin. This pin should be connected to the
system ground with minimuim inductance.
Ground pattern on the board should be formed as
wide as possible. All the ground pins must be
connected together with wide ground pattern to
decrease impedance difference.
6
4
1
Signal output pin. The inductor must be attached
between VCC and output pins to supply current to
the internal output transistors.
2
3
—
Power supply pin, which biases the internal input
transistor. This pin should be externally equipped
with bypass capacitor to minimize its impedance.
GND
GND
NT
IN
6
OUTPUT Voltage as
same as
VCC
through
external
inductor
Description
D
Pin
Name
UE
Pin
No.
APPLICATION EXAMPLE (Digital Cellular Telephone)
SC
O
RX
÷N
DI
PA
: UPC8181TB
I
Q
PLL
SW
TX
DEMO
PLL
I
0˚
Phase
Shifter
90˚
Q
5
UPC8181TB
OUTLINE DIMENSIONS (Units in mm)
LEAD CONNECTIONS
(Top View)
6-PIN SUPER MINIMOLD
(Bottom View)
+0.1
-0.05
0.2
0.65
1.3
0.65
1
1.
2.
3.
4.
5.
6.
3
5
5
2
6
6
1
INPUT
GND
GND
OUTPUT
GND
VCC
IN
0 to 0.1
0.15
+0.1
-0.05
0.7
0.9 ± 0.1
0.1 MIN
4
UE
2.0 ±0.2
2
4
D
3
1.25 ±0.1
C3E
2.1 ±0.1
ORDERING INFORMATION
PART NUMBER
PACKAGE
QUANTITY
UPC8181TB-E3-A
6-pin super minimold
3kpcs/Reel
TEST CIRCUIT
NT
Note: Embossed tape 8 mm wide. Pins 1,2,3 face tape perforation
side.
APPLICATION BOARD
VCC
SC
O
C3
100 nH
6
50Ω
4
1
C2
51 pF
51 pF
50Ω
OUT
J2
J1
RF IN
2,3,5
DI
IN
C1
Si MMIC AMPLIFIER
C1
L1
U1
1
CXX
1000 pF
RF OUT
C2
C3
Vcc
GND
P1
Note:
1. double sided copper clad GETEK board (H = .028, εr = 4.2.)
2. Back side: GND pattern.
3. Solder plated on patterns.
4. o O : Through holes.
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
02/15/2002