A Business Partner of Renesas Electronics Corporation. Preliminary NESG3033M14 Data Sheet NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 4-Pin Lead-Less Minimold (M14, 1208 PKG) R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 FEATURES ED • The NESG3033M14 is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz • Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz • SiGe HBT technology (UHS3) adopted: fmax = 110 GHz • This product is improvement of ESD of NESG3032M14. ORDERING INFORMATION Part Number Order Number NESG3033M14 NESG3033M14-A Package Quantity 4-pin lead-less minimold (M14, 1208 PKG) (Pb-Free) NESG3033M14-T3 NESG3033M14-T3-A Supplying Form 50 pcs • 8 mm wide embossed taping (Non reel) • Pin 1 (Collector), Pin 4 (NC) face the perforation side of the tape 10 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. Parameter Collector to Base Voltage Collector to Emitter Voltage Base Current Symbol VCBO Note 1 VCEO IB Ratings Unit 5.0 V 4.3 V Note 1 12 mA IC 35 mA Note 2 150 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C SC O Collector Current NT ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Total Power Dissipation Ptot Notes 1. VCBO and IB are limited by the permissible current of the protection element. 2. Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB DI <R> IN U • 4-pin lead-less minimold (M14, 1208 PKG) CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 Page 1 of 14 A Business Partner of Renesas Electronics Corporation. NESG3033M14 RECOMMENDED OPERATING RANGE (TA = +25°C) Parameter Symbol MIN. TYP. MAX. Unit Input Power Pin − − 0 dBm Base Feedback Resister Rb − − 100 kΩ Remark When the voltage return bias circuit like the figure below is used, a current increase is seen because the However, there is no influence of reliability, including deterioration. Rb DI SC O NT IN U Bias Choke ED ESD protection element is turned on when recommended range of motion in the above table is exceeded. R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 Page 2 of 14 A Business Partner of Renesas Electronics Corporation. NESG3033M14 <R> ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 − − 100 nA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 − − 100 nA 220 300 380 − hFE VCE = 2 V, IC = 6 mA RF Characteristics Insertion Power Gain S21e 2 VCE = 2 V, IC = 15 mA, f = 2.0 GHz 15.0 17.5 − dB − 0.60 0.85 dB − 17.5 − dB − 0.15 0.25 pF Noise Figure NF VCE = 2 V, IC = 6 mA, f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt Associated Gain Ga VCE = 2 V, IC = 6 mA, f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt Cre Maximum Stable Power Gain Note 2 MSG Note 3 VCB = 2 V, IE = 0, f = 1 MHz VCE = 2 V, IC = 15 mA, f = 2.0 GHz 17.5 20.5 − dB − 12.5 − dBm − 24.0 − dBm IN U Reverse Transfer Capacitance ED DC Current Gain Note 1 Gain 1 dB Compression Output Power PO (1 dB) VCE = 3 V, IC (set) = 20 mA, f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt 3rd Order Intermodulation Distortion Output Intercept Point OIP3 VCE = 3 V, IC (set) = 20 mA, f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 3. MSG = hFE CLASSIFICATION FB/YFB Marking zL hFE Value 220 to 380 SC O Rank DI <R> S21 S12 NT 2. Collector to base capacitance when the emitter grounded R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 Page 3 of 14 A Business Partner of Renesas Electronics Corporation. NESG3033M14 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on Glass Epoxy PCB (1.08 cm2 × 1.0 mm (t) ) 200 150 100 50 25 50 75 100 125 Ambient Temperature TA (˚C) VCE = 1 V 1 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.1 0 0.7 0.8 0.9 1.0 SC O 0.01 0.001 VCE = 2 V 0.01 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.8 0.9 1.0 Base to Emitter Voltage VBE (V) 0.9 1.0 Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 40 200 μ A 35 180 μ A 160 μ A 140 μ A 30 25 120 μ A 100 μ A 20 80 μ A 15 60 μ A 10 40 μ A 5 0.7 5 0.1 Collector Current IC (mA) 0.1 DI Collector Current IC (mA) 1 0.6 4 1 VCE = 3 V 0.5 3 10 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 10 0.0001 0.4 2 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 Base to Emitter Voltage VBE (V) 100 1 Collector to Base Voltage VCB (V) Collector Current IC (mA) 10 0.2 NT Collector Current IC (mA) 100 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 150 f = 1 MHz IN U 0 0.3 ED Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Ptot (mW) 250 REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0 IB = 20 μ A 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Remark The graphs indicate nominal characteristics. R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 Page 4 of 14 A Business Partner of Renesas Electronics Corporation. NESG3033M14 DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 100 10 0.1 1 10 100 100 10 0.1 VCE = 3 V 1 100 NT DC Current Gain hFE 10 0.1 10 IN U DC CURRENT GAIN vs. COLLECTOR CURRENT 100 1 Collector Current IC (mA) Collector Current IC (mA) 1 000 VCE = 2 V ED VCE = 1 V DC Current Gain hFE DC Current Gain hFE 1 000 DC CURRENT GAIN vs. COLLECTOR CURRENT 10 100 Collector Current IC (mA) DI SC O Remark The graphs indicate nominal characteristics. R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 Page 5 of 14 A Business Partner of Renesas Electronics Corporation. NESG3033M14 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 20 15 10 5 0 1 10 25 VCE = 2 V f = 2 GHz 20 15 10 5 0 1 100 Collector Current IC (mA) 15 IN U 20 5 0 1 10 100 MSG MAG MAG MSG |S21e|2 5 1 10 100 Frequency f (GHz) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) SC O VCE = 2 V IC = 15 mA DI Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) MSG 25 20 15 |S21e|2 MAG MAG MSG 10 5 0 0.1 1 10 100 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 10 0 0.1 30 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 25 15 VCE = 1 V IC = 15 mA 35 Frequency f (GHz) 35 20 40 Collector Current IC (mA) 40 30 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) VCE = 3 V f = 2 GHz 10 100 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY NT Gain Bandwidth Product fT (GHz) 25 10 Collector Current IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 30 ED 25 30 VCE = 1 V f = 2 GHz Gain Bandwidth Product fT (GHz) Gain Bandwidth Product fT (GHz) 30 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 40 VCE = 3 V IC = 15 mA 35 30 MSG 25 MAG 20 15 MAG MSG |S21e|2 10 5 0 0.1 1 10 100 Frequency f (GHz) Remark The graphs indicate nominal characteristics. R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 Page 6 of 14 A Business Partner of Renesas Electronics Corporation. INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 VCE = 1 V f = 0.5 GHz 25 20 MSG |S21e|2 15 10 5 0 1 10 100 30 25 VCE = 1 V f = 1 GHz 20 15 10 5 0 1 20 15 |S21e|2 5 1 10 100 Insertion Power Gain |S21e| (dB) Maximum Available Power Gain MAG (dB) 20 MAG |S21e|2 0 –5 15 10 |S21e|2 5 0 1 10 100 INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT 15 5 MAG INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT VCE = 1 V f = 5 GHz 10 MSG 20 Collector Current IC (mA) DI 2 25 25 VCE = 1 V f = 3 GHz Collector Current IC (mA) 1 10 100 Collector Current IC (mA) Insertion Power Gain |S21e|2 (dB) Maximum Stable Power Gain MSG (dB) 0 30 NT 10 IN U MAG 100 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) MSG SC O Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 25 10 Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT VCE = 1 V f = 2 GHz MAG |S21e|2 Collector Current IC (mA) 30 MSG ED INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Stable Power Gain MSG (dB) NESG3033M14 30 VCE = 2 V MSG f = 0.5 GHz 25 |S21e|2 20 15 10 5 0 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 Page 7 of 14 A Business Partner of Renesas Electronics Corporation. NESG3033M14 25 VCE = 2 V f = 1 GHz MSG 2 |S21e| 20 15 10 5 0 1 10 100 30 25 VCE = 2 V f = 2 GHz MSG 20 |S21e|2 15 10 5 0 1 Collector Current IC (mA) 15 2 |S21e| 5 1 10 100 Insertion Power Gain |S21e| (dB) Maximum Stable Power Gain MSG (dB) 25 15 MAG 10 |S21e|2 5 0 1 10 100 INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT VCE = 3 V f = 0.5 GHz MSG 2 |S21e| 20 15 10 5 0 20 Collector Current IC (mA) DI 2 30 25 VCE = 2 V f = 5 GHz Collector Current IC (mA) 1 10 100 Collector Current IC (mA) Insertion Power Gain |S21e|2 (dB) Maximum Stable Power Gain MSG (dB) 0 30 NT 10 IN U MAG 100 INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) MSG 20 SC O Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 25 VCE = 2 V f = 3 GHz 10 Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 MAG ED 30 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT 30 25 VCE = 3 V f = 1 GHz 20 MSG |S21e|2 15 10 5 0 1 10 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 Page 8 of 14 A Business Partner of Renesas Electronics Corporation. NESG3033M14 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 25 VCE = 3 V f = 2 GHz MSG MAG 20 |S21e|2 15 10 5 0 1 10 100 30 25 VCE = 3 V f = 3 GHz MSG 20 15 |S21e|2 10 5 0 1 20 15 MAG 10 |S21e|2 5 0 IN U 25 VCE = 3 V f = 5 GHz 100 NT Insertion Power Gain |S21e| (dB) Maximum Available Power Gain MAG (dB) 2 30 10 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT MAG ED 30 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 1 10 100 Collector Current IC (mA) DI SC O Remark The graphs indicate nominal characteristics. R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 Page 9 of 14 A Business Partner of Renesas Electronics Corporation. NESG3033M14 OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 15 40 Pout 10 5 30 20 IC 10 0 –5 –20 –15 –10 –5 0 5 0 IN U Input Power Pin (dBm) ED 50 VCE = 3 V, f = 2 GHz Icq = 20 mA (RF OFF) Collector Current IC (mA) Output Power Pout (dBm) 20 Measuring method : Measured at power matched with external sleeve tuner. (The load resistance is not inserted Ga 3 2 15 10 1 5 NF 1 10 VCE = 2 V f = 2 GHz 0 100 SC O 0 20 NT Noise Figure NF (dB) 4 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT Associated Gain Ga (dB) between the base DC power supply and Bias Tee.) Collector Current IC (mA) Remark The graphs indicate nominal characteristics. S-PARAMETERS S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [Products] → [RF Devices] → [Device Parameters] URL http://www.renesas.com/products/microwave/ DI <R> R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 Page 10 of 14 A Business Partner of Renesas Electronics Corporation. NESG3033M14 EVALUATION CIRCUIT EXAMPLE (f = 1.575 GHz LNA) GND VCC IN R3 C3 ED C4 R1 C1 R2 IN U L2 C2 L1 Tr. (NESG3033M14) NT NESG3033M14 GPS_LNA Notes 1. 15 × 24 mm, t = 0.2 mm double sided copper clad glass epoxy PWB. 2. Au plated on pattern : Through holes DI SC O 3. R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 Page 11 of 14 A Business Partner of Renesas Electronics Corporation. NESG3033M14 <R> EVALUATION CIRCUIT (f = 1.575 GHz LNA) VCC 10 000 pF R3 62 Ω R2 5.6 Ω L2 R1 IN C4 10 000 pF ED C3 3V 3.9 nH C2 82 kΩ C1 L1 10 000 pF 5.6 nH 6 pF ×2 IN U Microstrip W = 0.15 mm L = 0.5 mm OUT The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. COMPONENT LIST Parts Part Number C1, C3, C4 Chip Capacitor GRM155B31H103KA88 Murata 10 000 pF C2 Chip Capacitor GRM1552C1H6R0DZ01 Murata 6 pF L1 Chip Inductor AML1005H5N6STS FDK 5.6 nH L2 Chip Inductor AML1005H3N9STS FDK 3.9 nH R1 Chip Resistor MCR01MZPJ823 ROHM 82 kΩ R2 Chip Resistor MCR01MZPJ5R6 ROHM 5.6 Ω ROHM 62 Ω SC O R3 Chip Resistor Maker NT Symbol MCR01MZPJ620 Value DI <R> R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 Page 12 of 14 A Business Partner of Renesas Electronics Corporation. NESG3033M14 EXAMPLE OF CHARACTERISTICS FOR 1.575 GHz LNA EVALUATION BOARD Parameter Symbol Value Unit Noise Figure NF 0.72 dB Gain Ga 17.3 dB Input Return Loss RLin 10.3 dB Output Return Loss RLout 14.2 dB PO (1 dB) −0.3 dBm IIP3 0.7 dBm Gain 1 dB Compression Output Power Input 3rd Order Distortion Interception Point ED ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = 3 V, IC = 6.1 mA, f = 1.575 GHz) VCC = 3 V, f = 1.575 GHz Icq = 6.1 mA (RF OFF) 10 5 Note 25 20 15 Pout 0 IC –5 –10 –25 –20 –15 –10 OUTPUT POWER, IM3 vs. INPUT POWER 40 20 VCC = 3 V, IC = 6.1 mA f1in = 1.575 GHz, f2in = 1.576 GHz 0 POUT −20 −40 IM3 NT 10 Output Power POUT (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) 15 Collector Current IC (mA) OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER IN U TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) Output Power Pout (dBm) 5 –5 0 0 5 −60 −80 −30 Input Power Pin (dBm) IIP3 = 0.7 dBm −20 −10 0 10 Input Power Pin (dBm) Note A current increase is seen because the ESD protection element is turned on. SC O However, there is no influence of deterioration etc. on reliability. Remark The graph indicates nominal characteristics. DI <R> R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 Page 13 of 14 A Business Partner of Renesas Electronics Corporation. NESG3033M14 PACKAGE DIMENSIONS 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) (UNIT: mm) 1.0±0.05 (Bottom View) 0.2 0.5±0.05 0.11+0.1 –0.05 IN U 0.2 ED 0.15±0.05 2 1 zL 4 0.8 1.2+0.07 –0.05 3 0.8+0.07 –0.05 PIN CONNECTIONS Collector Emitter Base Note NC (Connected with Pin 2) NT 1. 2. 3. 4. Note A NC pin is Non-connection in the mold package (When NC-pin is open state, It will get an influences of floating SC O capacitance. Therefore, we recommend that NC pin connect to Emitter pin). DI <R> R09DS0049EJ0300 Rev.3.00 Sep 14, 2012 Page 14 of 14 Revision History NESG3033M14 Data Sheet Description Date Page Summary 1.00 Jul 19, 2005 – First edition issued 2.00 Sep 11, 2007 – Second edition issued 3.00 Sep 14, 2012 Throughout The company name is changed to Renesas Electronics Corporation. p.1 Modification of ORDERING INFORMATION p.3 Modification of ELECTRICAL CHARACTERISTICS p.3 Modification of hFE CLASSIFICATION p.10 Modification of method for obtaining S-parameters p.12 Modification of EVALUTION CIRCUIT ED Rev. Modification of COMPONENT LIST p.13 Modification of EXAMPLE OF CHARACTERISTICS FOR f = 1.575 GHz LNA EVALUATION BOARD p.14 Modification of PACKAGE DIMENSIONS DI SC O NT IN U p.12 All trademarks and registered trademarks are the property of their respective owners. C-1