NE3521M04 Data Sheet - California Eastern Laboratories

A Business Partner of Renesas Electronics Corporation.
Data Sheet
NE3521M04
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
R09DS0058EJ0100
Rev.1.00
Mar 19, 2013
FEATURES
• Low noise figure and high associated gain:
NF = 0.85 dB TYP., Ga = 11 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 20 GHz
NF = 0.9 dB TYP., Ga = 10.5 dB TYP. @VDS = 2 V, ID = 6mA, f = 20 GHz (Reference Value)
• Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
• DBS LNB gain-stage, Mix-stage
• Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
NE3521M04-T2
Order Number
NE3521M04-T2-A
NE3521M04-T2B
NE3521M04-T2B-A
Package
Quantity
Flat-lead 4-pin 3 kpcs/reel
thin-type super
minimold (M04)
15 kpcs/reel
(Pb-Free)
Marking
V86
Supplying Form
• Embossed tape 8 mm wide
• Pin 1 (Source), Pin 2 (Drain)
face the perforation side of the
tape
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3521M04-A
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Symbol
Ratings
Unit
Drain to Source Voltage
Parameter
VDS
4.0
V
Gate to Source Voltage
VGS
–3.0
V
Drain Current
ID
IDSS
mA
Gate Current
IG
80
µA
Ptot
125
mW
Tch
+125
°C
Total Power Dissipation
Note
Channel Temperature
Storage Temperature
Tstg
–65 to +125
Note: Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0058EJ0100 Rev.1.00
Mar 19, 2013
Page 1 of 8
A Business Partner of Renesas Electronics Corporation.
NE3521M04
RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
VDS
1
2
3
V
Drain Current
ID
3
10
15
mA
Input Power
Pin
–
–
0
dBm
Drain to Source Voltage
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
MIN.
TYP.
MAX.
Unit
Gate to Source Leak Current
Parameter
IGSO
VGS = –3.0 V
–
0.5
10
μA
Saturated Drain Current
IDSS
VDS = 2 V, VGS = 0 V
25
45
70
mA
Gate to Source Cut-off Voltage
Symbol
Test Conditions
VGS (off)
VDS = 2 V, ID = 100 μA
–0.2
–0.7
–1.3
V
Transconductance
gm
VDS = 2 V, ID = 10 mA
50
–
–
mS
Noise Figure
NF
VDS = 2 V, ID = 10 mA, f = 20 GHz
–
0.85
1.2
dB
Associated Gain
Ga
9
11
–
dB
STANDARD CHARACTERISTICS FOR REFERENCE
(TA = +25°C, unless otherwise specified)
Parameter
Symbol
Noise Figure
NF
Associated Gain
Ga
R09DS0058EJ0100 Rev.1.00
Mar 19, 2013
Test Conditions
VDS = 2 V, ID = 6 mA, f = 20 GHz
Reference Value
0.9
Unit
dB
10.5
dB
Page 2 of 8
A Business Partner of Renesas Electronics Corporation.
NE3521M04
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
80
VDS = 2 V
DRAIN CURRENT ID (mA)
70
200
150
125
100
50
50
0
200
100 125 150
50
40
30
20
0
-0.80
250
-0.60
-0.40
-0.20
0.00
Ambient Temperature TA (°C)
GATE TO SOURCE VOLTAGE VGS (V)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs.DRAIN CURRENT
DRAIN CURRENT
vs. DRAIN TO SOURCE VOLTAGE
2.5
f = 20 GHz
VDS = 2 V
Ga
2.0
14
80
13
70
12
11
1.5
10
9
1.0
8
7
NFmin
0.5
6
5
0.0
0
4
5
10
15
20
25
DRAIN CURRENT ID (mA)
MINIMUM NOISE FIGURE NFmin (dB)
60
10
ASSOCIATED GAIN Ga (dB)
Total Power Dissipation Ptot (mW)
250
60
50
-0.1 V
30
-0.2 V
20
-0.3 V
10
0
30
VGS = 0 V
40
-0.4 V
-0.5 V
0.0
1.0
2.0
3.0
4.0
DRAIN TO SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (mA)
2.0
20
VDS = 2 V
ID = 10 mA
1.8
18
1.6
16
1.4
14
Ga
1.2
12
1.0
10
0.8
8
0.6
6
NFmin
0.4
4
0.2
0.0
2
5
10
15
20
25
30
ASSOCIATED GAIN Ga (dB)
MINIMUM NOISE FIGURE NFmin (dB)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs.FREQUENCY
0
FREQUENCY f (GHz)
Remark The graphs indicate nominal characteristics.
R09DS0058EJ0100 Rev.1.00
Mar 19, 2013
Page 3 of 8
A Business Partner of Renesas Electronics Corporation.
NE3521M04
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[Products] → [RF Devices] → [Device Parameters]
URL http://www.renesas.com/products/microwave/
R09DS0058EJ0100 Rev.1.00
Mar 19, 2013
Page 4 of 8
A Business Partner of Renesas Electronics Corporation.
NE3521M04
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm)
2.0±0.1
2
1
1.25
3
4
1.30
0.65
1.30
3
4
0.30+0.1
–0.05
0.11+0.1
–0.05
1
0.30+0.1
–0.05
0.59±0.05
(1.05)
0.65
0.60
0.65
1.25
2
1.25±0.1
V86
2.0±0.1
(Bottom View)
0.30+0.1
–0.05
0.40+0.1
–0.05
2.05±0.1
PIN CONNECTIONS
1.
2.
3.
4.
R09DS0058EJ0100 Rev.1.00
Mar 19, 2013
Source
Drain
Source
Gate
Page 5 of 8
A Business Partner of Renesas Electronics Corporation.
NE3521M04
MOUNTING PAD DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm)
-Reference 1-
1.35
0.60
0.75
1
4
0.
2
4 - φ0.50
0.
0.58
Device Direction
28
1
1.20
1.42
0.56
4
1.26
1.20
4
2
2
38
0.
42
3
0.
0.80
3
0.75
0.60
1.35
-Reference 2Device Direction
3
2
3
4
1
4
0.5
1
1.3
1.25
0.6
2
1.6
0.6
Remark The mounting pad layout in this document is for reference only.
R09DS0058EJ0100 Rev.1.00
Mar 19, 2013
Page 6 of 8
A Business Partner of Renesas Electronics Corporation.
NE3521M04
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Partial Heating
Soldering Conditions
Peak temperature (package surface temperature)
Time at peak temperature
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 260°C or below
: 10 seconds or less
: 60 seconds or less
: 120±30 seconds
: 3 times
: 0.2% (Wt.) or below
Peak temperature (package surface temperature) : 350°C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below
Condition Symbol
IR260
HS350
CAUTION
Do not use different soldering methods together (except for partial heating).
R09DS0058EJ0100 Rev.1.00
Mar 19, 2013
Page 7 of 8
A Business Partner of Renesas Electronics Corporation.
NE3521M04
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
R09DS0058EJ0100 Rev.1.00
Mar 19, 2013
Page 8 of 8
Revision History
Rev.
1.00
Date
Mar 19, 2013
NE3521M04 Data Sheet
Description
Summary
Page
-
First edition issued
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C-1
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