uPC3228T5S DS

DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
μPC3228T5S
ED
LOW DISTORTION DOWN-CONVERTER +
AGC AMPLIFIER + VIDEO AMPLIFIER
DESCRIPTION
The μPC3228T5S is a silicon bipolar monolithic IC designed for use as IF down-converter for digital TV, digital
CATV. This IC consists of AGC amplifier, mixer and video amplifier.
IN
U
The package is 32-pin plastic QFN (Quad Flat Non-lead) package suitable for surface mount.
This IC is manufactured using our 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process.
This process uses silicon nitride passivation film. This material can protect chip surface from external pollution and
prevent corrosion/migration. Thus, this IC has excellent performance, uniformly and reliability.
FEATURES
• Total performance
: ICC = 85 mA TYP. @ VCC = 5 V
• AGC AMPLIFIER + MIXER + DRIVER BLOCK : fRF (BW) = 20 to 800 MHz
: CG = 28 dB TYP.
• VIDEO AMPLIFIER BLOCK
NT
: GCR = 70 dB TYP.
: IM3 = 47 dBc MIN./57 dBc TYP. @ Single Ended-OUT = 0.5 Vp-p/tone
: GV = 59 dB TYP.
: fIF (BW) = 20 to 100 MHz
: IM3 = 45 dBc MIN./55 dBc TYP. @ Output = 110 dBu/tone, Differential-out
• High-density surface mounting
SC
O
APPLICATION
: 32-pin plastic QFN package (5.0 × 5.0 × 0.75 mm)
• Digital CATV
• Cable modem receivers
ORDERING INFORMATION
Part Number
Order Number
μPC3228T5S-E2
μPC3228T5S-E2-A
Package
32-pin plastic QFN
(Pb-Free)
Marking
C3228
Supplying Form
• Embossed tape 12 mm wide
• Pin 8,9 face the perforation side of the tape
• Qty 2.5 kpcs/reel
• Dry pack specification
DI
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: μPC3228T5S-A
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Document No. PU10623EJ01V0DS (1st edition)
Date Published June 2006 NS CP(K)
μPC3228T5S
INTERNAL BLOCK DIAGRAM AND PIN CONFIGURATION
Note
15 LO-IN2
Driv-OUT1 27
Driver AMP
GND-Driv 29
12 VCC-IF2
11 IF-OUT2
IF_IN AMP2
Driver AMP
NC
GND-REG
VAGC
Data Sheet PU10623EJ01V0DS
8
6
5
4
VCC-IF1
GND-REG
NT
2
GND-IF1
Note
GND-IF1
DI
SC
O
Note 1, 9, 17, 25-pin: Connected to the lead frame.
2
10 IF-OUT1
9
1
IF-IN2 32
3
IF-IN1 31
13 GND-LO
AGC
Control
IF_IN AMP
14 LO-IN1
IN
U
LO AMP
Driv-OUT2 28
GND 30
ED
16 GND-MIX
RF_AGC AMP
GND-Driv 26
17 GND-MIX
18 VCC-LO
19 VCC-MIX
20 VCC-Driv
21 VCC-AGC
22 RF-IN1
25
GND-IF2
Note
7
GND-AGC
23 RF-IN2
24 GND-AGC
(Top View)
GND-IF2
Note
μPC3228T5S
ABSOLUTE MAXIMUM RATINGS
Symbol
Co n d it i o n s
Supply Volt age
VCC
TA = +25°C
Power Dissipation
PD
TA = +80°C
Operating Ambient Temperature
TA
Storage Temperature
Tstg
Ratings
U ni t
6.0
V
Note
800
mW
Note
−20 to +80
°C
−55 to +150
°C
ED
Parameter
Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB
RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified)
Symbol
Supply Voltage
VCC
Operating Ambient Temperature
TA
Gain Control Voltage Range
VAGC
fRF (BW)
IF Operating Frequency Range
fIF (BW)
MIN.
TYP.
VCC = 4.5 to 5.5 V
MAX.
Unit
4 .5
5 .0
5.5
V
−20
+25
+80
°C
0
−
3.3
V
20
−
800
MHz
20
−
100
MHz
DI
SC
O
NT
RF Operating Frequency Range
Conditions
IN
U
Parameter
Data Sheet PU10623EJ01V0DS
3
μPC3228T5S
ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = 5 V, unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Circuit Current
ICC
No input signal
Note 1
65
85
110
mA
VAGC (H)
@ Maximum gain
Note 1
2.5
−
3.5
V
AGC Voltage Low Level
VAGC (L)
@ Minimum gain
Note 1
−
0
−
V
ED
AGC Voltage High Level
RF Characteristics
(RF AGC Amplifier Block + Mixer Block + Driver Amplifier: fRF = 80 MHz, fLO = 130 MHz, PLO = −10 dBm, ZS = 50 Ω, ZL = 400 Ω/16 pF)
fRF
RF Gain Control Range
GCR1
Mixer Conversion Gain
CG
3rd Order Intermodulaion Distortion
IM31
fC = −3 dB
Note 1
20
−
800
MHz
VAGC = 0 to 2.5 V
Note 1
62
70
−
dB
25
28
31
dB
VAGC = 2.5 V
Differential-IN: Vin = +18 dBmV Note 1
IN
U
RF Input Frequency Range
f1 = 44 MHz, f2 = 45 MHz,
Vin = +30 dBmV/tone,
47
57
−
dBc
−
8.3
−
dB
20
−
100
MHz
56
59
62
dB
45
55
−
dBc
−
1.0
−
Vp-p
−
3.0
−
dB
Single Ended-OUT = 0.5 Vp-p/tone
Note 1
Noise Figure
NF1
IF Characteristics
VAGC = 2.5 V, f = 50 MHz,
Differential-Output
Note 2
IF Input Frequency Range
IF Amplifier Gain
NT
(IF Amplifier Block + Driver Amplifier: fIF = 50 MHz, ZS = 50 Ω, ZL = 2 100 Ω)
3rd Order Intermodulaion Distortion
fC = −3 dB
GV
Vin = −7 dBmV,
IM32
Vout
Differential-IN/OUT
Noise Figure
NF2
Note 5
Note 5
f1 = 49.5 MHz, f2 = 50.5 MHz,
Vout = 110 dBu/tone,
Differential-IN/OUT
Note 5
Single Ended-Output
Note 5
SC
O
IF Output Voltage
fIF
VAGC = 0 V, f = 50 MHz,
Single Ended-Output
Note 2
Total Block (RF AGC Amplifier + Mixer + Driver Amplifier + SAW Filter + IF Ampliter + Driver Amplifier),
SAW Filter : EPCOS X6889M (fIF = 49 MHz, PLO = −10 dBm, fRF = 70 to 130 MHz, ZS = 50 Ω, ZL = 1 050 Ω)
LO-RF Leakage
LORF
VAGC = 2.5 V, 22-pin 75 Ω Termination
−
−54
−44
dBmV
LO-IF Leakage
LOIF
VAGC = 2.5 V,
−
−40
−25
dBc
fLO = 110 to 180 MHz
Note 3
Vout = 0.7 Vp-p Single Ended-Output
fRF = 130 MHz, fLO = 179 MHz Note 4
DI
Notes 1. By measurement circuit 1
2. By measurement circuit 2
3. By measurement circuit 3
4. By measurement circuit 4
5. By measurement circuit 5
4
Data Sheet PU10623EJ01V0DS
μPC3228T5S
MEASUREMENT CIRCUIT 1
S.G
Vin
1 nF 1 nF 1 nF 1 nF
1 nF
25
17
18
19
20
IN
U
Driver AMP
1 nF
10
9
S.G
51 Ω
50 Ω
1 nF
0.1 μ F
0.1 μ F
1 000 Ω
0.1 μ F
1 000 Ω
50 Ω
50 Ω
8
32
SC
O
0.1 μ F
11
IF_IN AMP2
7
0.1 μ F
31
Note
12
AGC
Control
IF_IN AMP
14
13
6
51 Ω
Driver AMP
29
30
Note
LO AMP
5
1 nF
28
15
NT
Vout2
400 Ω
27
3
16 pF
1 nF
2
Vout1
1
Differential
Probe (10:1)
1 MΩ//7 pF
PLO
16
RF_AGC AMP
26
4
VOUT = Vout1 – Vout2
VCC
21
24
50 Ω
23
1 nF
22
Spectrum
Analyzer
ED
51 Ω
100 pF
0.1 μ F
1 kΩ
VAGC
DI
Note Balun Transformer : TOKO 617DB-1674 B4F (Double balanced type)
Data Sheet PU10623EJ01V0DS
5
μPC3228T5S
MEASUREMENT CIRCUIT 2
Noise Figure
Noise Figure Meter
1 nF 1 nF 1 nF 1 nF
1 nF
31
IF_IN AMP
DI
17
18
IF_IN AMP2
Driver AMP
8
7
6
5
32
100 pF
0.1 μ F
Noise Source
19
AGC
Control
SC
O
0.1 μ F
Driver AMP
1 kΩ
VAGC
Noise Figure Meter 50 Ω
Note Balun Transformer : TOKO 617DB-1674 B4F (Double balanced type)
6
14
13
4
0.1 μ F
LO AMP
29
30
Note
15
NT
50 Ω
28
3
51 Ω 1 nF
27
2
MA/Com
H183-4
30-3 000 MHz
51 Ω 1 nF
16
RF_AGC AMP
26
1
Hybrid Coupler
20
22
23
24
25
IN
U
VCC
50 Ω
21
1 nF
ED
Noise Source
Data Sheet PU10623EJ01V0DS
Note
1 nF
10
9
S.G
51 Ω
1 nF
0.1 μ F
12
11
PLO
0.1 μ F
1 000 Ω
0.1 μ F
1 000 Ω
50 Ω
50 Ω
μPC3228T5S
MEASUREMENT CIRCUIT 3
Lo-RF Leakage
50 Ω
24 Ω
VOUT
25
IF_IN AMP
17
18
19
Driver AMP
4
3
2
1
0.1 μ F
20
IF_IN AMP2
0.1 μ F
14
13
10
PLO
Note
1 nF
S.G
51 Ω
50 Ω
1 nF
0.1 μ F
12
11
VCC
0.1 μ F
1 000 Ω
0.1 μ F
1 000 Ω
9
8
32
AGC
Control
SC
O
0.1 μ F
31
Driver AMP
7
29
30
Note
51 Ω
28
6
1 nF
LO AMP
5
400 Ω
27
15
NT
16 pF
16
RF_AGC AMP
26
1 nF
21
22
1 nF
23
24
1 nF
IN
U
1 nF 1 nF 1 nF 1 nF
ED
Spectrum
Analyzer
100 pF
1 kΩ
DI
VAGC
Note Balun Transformer : TOKO 617DB-1674 B4F (Double balanced type)
Data Sheet PU10623EJ01V0DS
7
μPC3228T5S
MEASUREMENT CIRCUIT 4
(fRF = 70 to 130 MHz (fIF = 49.1 MHz ± 0.6 MHz), fLO = 119 to 179 MHz, PLO = −10 dBm, Vout = 0.7 Vp-p
(Single Ended))
ED
LO-IF Leakage
S.G
Vin
51 Ω
1 nF 1 nF 1 nF 1 nF
1 nF
29
IF_IN AMP
17
18
20
19
11
IF_IN AMP2
Driver AMP
1 nF
0.1 μ F
0.1 μ F
1 000 Ω
0.1 μ F
1 000 Ω
100 pF
1 kΩ
DI
Note Balun Transformer : TOKO 617DB-1674 B4F (Double balanced type)
Data Sheet PU10623EJ01V0DS
Spectrum
Analyzer
Vout1
VAGC
8
50 Ω
1 nF
8
5
4
3
2
1
0.1 μ F
S.G
51 Ω
9
7
32
10
PLO
Note
12
AGC
Control
6
31
14
13
Driver AMP
SC
O
0.1 μ F
LO AMP
28
30
0.1 μ F
21
27
15
NT
SAW Filter
EPCOS
X6889M
16
RF_AGC AMP
26
1 nF
IN
U
25
1 nF
VCC
22
23
24
1 nF
50 Ω
50 Ω
Vout2
49 M
fLO
μPC3228T5S
MEASUREMENT CIRCUIT 5
51 Ω
1 nF 1 nF 1 nF 1 nF
1 nF
25
VIN = Vin1 – Vin2
Differential-IN
17
18
19
20
21
IN
U
0.1 μ F
10
8
7
Driver AMP
6
0.1 μ F
11
IF_IN AMP2
SC
O
50 Ω
Vin2
32
IF_IN AMP
5
0.1 μ F
51 Ω
31
Note
1 nF
51 Ω
1 nF
0.1 μ F
12
AGC
Control
4
S.G
Vin1
Driver AMP
NT
Note
14
13
29
30
15
LO AMP
3
Vin
28
2
1 nF
27
1
400 Ω
16 pF
16
RF_AGC AMP
26
1 nF
VCC
22
23
24
1 nF
ED
IF Block
Vout2
0.1 μ F
1 000 Ω
0.1 μ F
1 000 Ω
9
Spectrum
Analyzer
50 Ω
50 Ω
Vout1
VOUT = Vout1 – Vout2
Differential-OUT
100 pF
1 kΩ
VAGC
DI
Note Balun Transformer : TOKO 617DB-1674 B4F (Double balanced type)
Data Sheet PU10623EJ01V0DS
9
μPC3228T5S
ILLUSTRATION OF THE EVALUATION BOARD
VCC
RF
R1
C1
VOUT1
C4C5 C1
C2
VOUT2
IF
C1
C2
OUT2
C1
C2
C2
C3
C2
Note
R3
C2
R3
R3
OUT1
NT
R1
Note
C1
C1
R2
C1
IN
U
R2
R1
C1
C1
IF
C1
ED
LO
SC
O
VCC VAGC
Note Balun Transformer : TOKO 617DB-1674 B4F (Double balanced type)
Remarks
1. Back side: GND pattern
2. Solder plated on pattern
3.
: Through hole
USING THE NEC EVALUATION BOARD
Values
Maker
Part Number
Size
C1
1 nF
Murata
GRM39CH
1608
C2
0.1 μF
Murata
GRM39B
1608
C3
100 pF
Murata
GRM39CH
1608
C4
10 pF
Murata
GRM36B
1005
DI
Symbol
10
C5
6 pF
Murata
GRM36B
1005
R1
51 Ω
Susumu
RR0816 510SSM
1608
R2
200 Ω
Susumu
RR0816 201SSM
1608
R3
1 000 Ω
Susumu
RR0816 102SSM
1608
Data Sheet PU10623EJ01V0DS
μPC3228T5S
PACKAGE DIMENSIONS
32-PIN PLASTIC QFN (UNIT: mm)
(Top View)
(Side View)
ED
5.0±0.1
(1.75)
(0.865)
0.4
2 1
(1.1)
Exposed Die Pad
To be connected
DI
SC
O
(0.21)
IN
U
(Side View)
(0.20)
0.76±0.1
Laser Marked Index
(1.75)
NT
1 2
(0.75) 0.85 MAX.
C3228
(Bottom View)
0.16±0.05
5.0±0.1
Data Sheet PU10623EJ01V0DS
11
μPC3228T5S
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground terminals must be connected together with wide ground pattern to decrease impedance
difference.
RECOMMENDED SOLDERING CONDITIONS
ED
(3) The bypass capacitor should be attached to VCC line.
This product should be soldered and mounted under the following recommended conditions.
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Peak temperature (package surface temperature)
Time at peak temperature
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
Wave Soldering
Peak temperature (molten solder temperature)
Time at peak temperature
Condit io n Sy mbol
: 260°C or below
: 10 seconds or less
IN
U
Infrared Reflow
S o l d e r i n g Condit ion s
For soldering
IR260
: 60 seconds or less
: 120±30 seconds
: 3 times
: 0.2%(Wt.) or below
: 260°C or below
: 10 seconds or less
WS260
Preheating temperature (package surface temperature) : 120°C or below
Maximum number of flow processes
Partial Heating
NT
Maximum chlorine content of rosin flux (% mass)
: 1 time
: 0.2%(Wt.) or below
Peak temperature (terminal temperature)
: 350°C or below
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Soldering time (per side of device)
: 3 seconds or less
DI
SC
O
Caution Do not use different soldering methods together (except for partial heating).
12
Data Sheet PU10623EJ01V0DS
HS350