PS2535-1

PHOTOCOUPLER
PS2535-1,PS2535L-1
HIGH COLLECTOR TO EMITTER VOLTAGE
HIGH ISOLATION VOLTAGE
MULTI PHOTOCOUPLER SERIES
−NEPOC Series−
DESCRIPTION
The PS2535-1 and PS2535L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN
silicon darlington connected phototransistor.
A high withstanding voltage between the I/O, the high voltage between the collector and emitter of the transistor,
and darlington transistor output enables low-current input.
The PS2535-1 is in a plastic DIP (Dual In-line Package) and the PS2535L-1 is lead bending type (Gull-wing) for
surface mount.
FEATURES
• High collector to emitter voltage (VCEO = 350 V)
• High isolation voltage (BV = 5 000 Vr.m.s.)
• High current transfer ratio (CTR = 1 500 % TYP.)
• Ordering number of taping product: PS2535L-1-E3, E4, F3, F4
• Safety standards
• UL approved: File No. E72422
• BSI approved: No. 8221/8222
• DIN EN60747-5-2 (VDE0884 Part2) approved (Option)
APPLICATIONS
• Telephone, Exchange equipment
• FAX/MODEM
Document No. PN10447EJ02V0DS (2nd edition)
Date Published March 2006 CP(K)
The mark  shows major revised points.
PS2535-1,PS2535L-1
PACKAGE DIMENSIONS (Unit : mm)
DIP Type (New package)
PS2535-1
3
0 to 15˚ +0.1
0.25 –0.05
1.25±0.15
0.50±0.10
0.25 M
2
0.1 +0.1
–0.05
0.9±0.25
9.60±0.4
2.54
0.15
Lead Bending Type
3
0 to 15˚ +0.1
0.25 –0.05
1.25±0.15
0.50±0.10
0.25 M
2.54
4
3
1. Anode
2. Cathode
3. Emitter
4. Collector
1
2
0.25 +0.1
–0.05
3.5±0.3
2
7.62
TOP VIEW
4.6±0.5
6.5±0.5
6.5±0.5
1. Anode
2. Cathode
3. Emitter
4. Collector
3.5±0.3
4
1
PS2535L-1
TOP VIEW
0.1 +0.1
–0.05
PS2535-1
4.6±0.5
3.3±0.5 4.15±0.4
1
0.25 M
DIP Type
3
1. Anode
2. Cathode
3. Emitter
4. Collector
1.25±0.15
2.54
2
4
0.25 +0.1
–0.05
2
7.62
TOP VIEW
4.6±0.35
6.5±0.5
6.5±0.5
1. Anode
2. Cathode
3. Emitter
4. Collector
3.5±0.3
3.2±0.4 4.15±0.4
4
1
PS2535L-1
TOP VIEW
3.5±0.3
4.6±0.35
Lead Bending Type (New package)
0.9±0.25
9.60±0.4
1.25±0.15
0.25 M
2.54
Data Sheet PN10447EJ02V0DS
0.15
PS2535-1,PS2535L-1
MARKING EXAMPLE
No. 1 pin
Mark
2535
NL601
N L
Assembly Lot
6 01
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
CTR Rank Code
Package
Made in Japan Made in Taiwan
Standard PKG
L
New PKG
J
N
Data Sheet PN10447EJ02V0DS
3
PS2535-1,PS2535L-1
ORDERING INFORMATION
Part Number
Order Number
Solder Plating
Packing Style
Safety Standard
Specification
PS2535-1
PS2535-1-A
PS2535L-1
PS2535L-1-A
PS2535L-1-E3
PS2535L-1-E3-A
PS2535L-1-E4
PS2535L-1-E4-A
PS2535L-1-F3
PS2535L-1-F3-A
PS2535L-1-F4
PS2535L-1-F4-A
PS2535-1-V
PS2535-1-V-A
PS2535L-1-V
PS2535L-1-V-A
PS2535L-1-V-E3
PS2535L-1-V-E3-A
PS2535L-1-V-E4
PS2535L-1-V-E4-A
PS2535L-1-V-F3
PS2535L-1-V-F3-A
PS2535L-1-V-F4
PS2535L-1-V-F4-A
Approval
Pb-Free
Magazine case 100 pcs
Standard products
(UL, BSI approved)
Embossed Tape 1 000 pcs/reel
Embossed Tape 2 000 pcs/reel
Magazine case 100 pcs
DIN EN60747-5-2
(VDE0884 Part2)
Embossed Tape 1 000 pcs/reel
Approved (Option)
Embossed Tape 2 000 pcs/reel
*1 For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Forward Current (DC)
IF
50
mA
Reverse Voltage
VR
6
V
∆PD/°C
0.7
mW/°C
PD
70
mW
IFP
0.5
A
Collector to Emitter Voltage
VCEO
350
V
Emitter to Collector Voltage
VECO
0.3
V
IC
120
mA
∆PC/°C
2.0
mW/°C
PC
200
mW
BV
5 000
Vr.m.s.
Operating Ambient Temperature
TA
−55 to +100
°C
Storage Temperature
Tstg
−55 to +150
°C
Diode
Power Dissipation Derating
Power Dissipation
Peak Forward Current
Transistor
*1
Collector Current
Power Dissipation Derating
Power Dissipation
Isolation Voltage
*2
*1 PW = 100 µs, Duty Cycle = 1%
*2 AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output
Pins 1-2 shorted together, 3-4 shorted together.
4
Data Sheet PN10447EJ02V0DS
Application Part
*1
Number
PS2535-1
PS2535-1,PS2535L-1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Diode
Symbol
Conditions
Forward Voltage
VF
IF = 10 mA
Reverse Current
IR
VR = 5 V
Terminal Capacitance
Ct
V = 0 V, f = 1.0 MHz
MIN.
TYP.
MAX.
Unit
1.2
1.4
V
5
µA
15
pF
Transistor
Collector to Emitter
Dark Current
ICEO
VCE = 350 V, IF = 0 mA
Coupled
Current Transfer Ratio
*1
(IC/IF)
CTR
IF = 1 mA, VCE = 2 V
Collector Saturation
Voltage
VCE (sat)
IF = 1 mA, IC = 2 mA
Isolation Resistance
RI-O
VI-O = 1.0 kVDC
Isolation Capacitance
CI-O
V = 0 V, f = 1.0 MHz
0.6
pF
VCC = 5 V, IC = 10 mA, RL = 100 Ω
18
µs
Rise Time
Fall Time
*2
tr
*2
tf
400
10
1 500
400
nA
5 500
%
1.0
V
Ω
11
5
*1 CTR rank
N : 400 to 5 500 (%)
L : 1 500 to 5 500 (%)
*2 Test circuit for switching time
Pulse input
VCC
IF
PW = 1 ms,
Duty cycle = 1/10
In monitor
VOUT
50 Ω
RL = 100 Ω
Data Sheet PN10447EJ02V0DS
5
PS2535-1,PS2535L-1
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
60
0.7 mW/˚C
40
20
0
25
100
75
50
240
220
200
180
160
140
120
100
80
60
40
20
2.0 mW/˚C
25
0
100
75
50
100
Ambient Temperature TA (˚C)
Ambient Temperature TA (˚C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
100
TA = +100 ˚C
+60 ˚C
+25 ˚C
50
Forward Current IF (mA)
Transistor Power Dissipation PC (mW)
80
Collector Current IC (mA)
Diode Power Dissipation PD (mW)
100
10
5
0 ˚C
–25 ˚C
–50 ˚C
1
0.5
5 mA
3 mA
2 mA
50
1 mA
10
5
IF = 0.5 mA
0.1
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1
0.4
1.5
0.8
1.0
1.2
1.4
1.6
Collector Saturation Voltage VCE(sat) (V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
100 000
VCEO = 350 V
10 000
CTR = 1 068 %
2 290 %
4 360 %
1 000
100
10
1
–50
–25
3 mA
5 mA
0
25
50
75
2 mA
50
1 mA
10
100
5
IF = 0.5 mA
1
0
1
2
3
4
Collector to Emitter Voltage VCE (V)
Ambient Temperature TA (˚C)
Remark The graphs indicate nominal characteristics.
6
0.6
Forward Voltage VF (V)
Collector Current IC (mA)
Collector to Emitter Dark Current ICEO (nA)
0.7
Data Sheet PN10447EJ02V0DS
5
;
;
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
1.4
4 500
Normalized to 1.0
at TA = 25 ˚C,
IF = 1 mA, VCE = 2 V
1.2
1.0
0.8
0.6
0.4
0.2
0.0
–50
–25
0
25
75
50
Current Transfer Ratio CTR (%)
Normalized Current Transfer Ratio CTR
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERTURE
PS2535-1,PS2535L-1
VCE = 2 V
4 000
3 500
3 000
2 500
2 000
1 500
1 000
500
0
0.1
100
0.5
10
40
LONG TERM CTR DEGRADATION
1 000
1.2
VCC = 10 V,
IC = 10 mA,
CTR = 1 800 %
IF = 1 mA
100
tf
td
10
ts
1
TA = 25 ˚C
1.0
tr
CTR (Relative Value)
Switching Time t ( µs)
5
Forword Current IF (mA)
Ambient Temperature TA (˚C)
SWITCHING TIME vs.
LORD RESISTANCE
1
0.8
TA = 60 ˚C
0.6
0.4
0.2
0.1
10
50
100
500 1000
0.0
10
Load Resistance RL (Ω)
102
103
104
105
106
Time (Hr)
Remark The graphs indicate nominal characteristics.
Data Sheet PN10447EJ02V0DS
7
PS2535-1,PS2535L-1
TAPING SPECIFICATIONS (in millimeters)
1.55±0.1
4.5 MAX.
10.3±0.1
7.5±0.1
φ 1.5 +0.1
–0
16.0±0.3
2.0±0.1
4.0±0.1
1.75±0.1
Outline and Dimensions (Tape)
4.0±0.1
5.3±0.1
8.0±0.1
0.4
Tape Direction
PS2535L-1-E3
PS2535L-1-E4
Outline and Dimensions (Reel)
2.0±0.5
φ 21.0±0.8
φ 80.0±1.0
R 1.0
φ 254±2.0
2.0±0.5
φ 13.0±0.2
17.5±1.0
21.5±1.0
Packing: 1 000 pcs/reel
8
Data Sheet PN10447EJ02V0DS
15.9 to 19.4
Outer edge of
flange
PS2535-1,PS2535L-1
1.55±0.1
4.5 MAX.
10.3±0.1
7.5±0.1
1.5 +0.1
–0
16.0±0.3
2.0±0.1
4.0±0.1
1.75±0.1
Outline and Dimensions (Tape)
4.0±0.1
5.3±0.1
8.0±0.1
0.4
Tape Direction
PS2535L-1-F3
PS2535L-1-F4
Outline and Dimensions (Reel)
2.0±0.5
φ 21.0±0.8
φ 100±1.0
R 1.0
φ 330±2.0
2.0±0.5
φ 13.0±0.2
17.5±1.0
21.5±1.0
Packing: 2 000 pcs/reel
Data Sheet PN10447EJ02V0DS
15.9 to 19.4
Outer edge of
flange
9
PS2535-1,PS2535L-1
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature
260°C or below (package surface temperature)
• Time of peak reflow temperature
10 seconds or less
• Time of temperature higher than 220°C
60 seconds or less
• Time to preheat temperature from 120 to 180°C
120±30 s
• Number of reflows
Three
• Flux
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
Package Surface Temperature T (˚C)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
260˚C MAX.
220˚C
to 60 s
180˚C
120˚C
120±30 s
(preheating)
Time (s)
(2) Wave soldering
• Temperature
260°C or below (molten solder temperature)
• Time
10 seconds or less
• Preheating conditions
120°C or below (package surface temperature)
• Number of times
One (Allowed to be dipped in solder including plastic mold portion.)
• Flux
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Soldering by soldering iron
• Peak temperature (lead part temperature)
350°C or below
• Time (each pins)
3 seconds or less
• Flux
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead.
(b) Please be sure that the temperature of the package would not be heated over 100°C.
10
Data Sheet PN10447EJ02V0DS
PS2535-1,PS2535L-1
(4) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute
maximum ratings.
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ according
to product.
When using products other than at the specified forward current, the characteristics curves may differ from the
standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual
operating conditions and thoroughly take variations or the like into consideration before use.
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
Data Sheet PN10447EJ02V0DS
11
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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