BCP5616Q 80V NPN MEDIUM POWER TRANSISTOR IN SOT223 Description Applications This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features Mechanical Data BVCEO > 80V IC = 1A High Continuous Collector Current ICM = 2A Peak Pulse Current 2W Power Dissipation Low Saturation Voltage VCE(sat) < 500mV @ 0.5A Complementary PNP Type: BCP5316Q Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) SOT223 Medium Power Switching or Amplification Applications AF Driver and Output Stages Case: SOT223 Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads. Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (Approximate) C B E Top View Top View Pin-Out Device Symbol Ordering Information (Notes 4 & 5) Product BCP5616QTA BCP5616QTC Notes: Compliance Automotive Automotive Marking BCP 5616 BCP 5616 Reel size (inches) 7 13 Tape width (mm) 12 12 Quantity per reel 1,000 4,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information BCP 5616 BCP5616Q Datasheet Number: DS36981 Rev. 2 - 2 YWW SOT223 BCP 5616 = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 5= 2015) WW or WW = Week Code (01~53) 1 of 7 www.diodes.com May 2015 © Diodes Incorporated BCP5616Q Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Collector Current Continuous Base Current Peak Pulse Base Current Symbol VCBO VCEO VEBO IC ICM IB IBM Value 100 80 5 1 2 100 200 Unit V V V Symbol PD RθJA RθJL TJ, TSTG Value 2 62 19.4 -65 to +150 Unit W °C/W °C/W °C Symbol ESD HBM ESD MM Value 4,000 400 A mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Leads Operating and Storage Temperature Range (Note 6) (Note 6) (Note 7) ESD Ratings (Note 8) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Unit V V JEDEC Class 3A C 6. For a device mounted with the collector lead on 50mm x 50mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady-state. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. BCP5616Q Datasheet Number: DS36981 Rev. 2 - 2 2 of 7 www.diodes.com May 2015 © Diodes Incorporated BCP5616Q 160 60 50mm x 50mm 1oz Cu Tamb = 25°C 50 40 Maximum Power (W) Thermal Resistance (°C/W) Thermal Characteristics and Derating Information D=0.5 30 20 D=0.2 Single Pulse D=0.05 10 D=0.1 0 100µ 1m 10m 100m 1 10 100 1k 120 Single pulse 100 80 60 40 20 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Max Power Dissipation (W) 50mm x 50mm 1oz Cu Tamb = 25°C 140 Pulse Power Dissipation 50mm x 50mm 1oz Cu 2.0 1.5 1.0 0.5 0.0 0 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve BCP5616Q Datasheet Number: DS36981 Rev. 2 - 2 3 of 7 www.diodes.com May 2015 © Diodes Incorporated BCP5616Q Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 9) Emitter-Base Breakdown Voltage Symbol BVCBO BVCEO BVEBO Min 100 80 5 Typ - Collector Cut-off Current ICBO - - Emitter Cut-off Current IEBO Static Forward Current Transfer Ratio (Note 9) hFE VCE(sat) VBE(on) 25 100 25 - Transition Frequency fT Output Capacitance Cobo Collector-Emitter Saturation Voltage (Note 9) Base-Emitter Turn-On Voltage (Note 9) Unit V V V - Max 0.1 20 20 250 0.5 1.0 150 - - MHz - - 25 pF µA nA V V Test Condition IC = 100µA IC = 10mA IE = 10µA VCB = 30V VCB = 30V, TA = +150°C VEB = 4V IC = 5mA, VCE = 2V IC = 150mA, VCE = 2V IC = 500mA, VCE = 2V IC = 500mA, IB = 50mA IC = 500mA, VCE = 2V IC = 50mA, VCE = 10V f = 100MHz VCB = 10V, f = 1MHz 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. Note: 250 200 0.6 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) 0.8 0.4 0.2 150 100 50 0 0 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 1 Typical Collector Current vs. Collector-Emitter Voltage BCP5616Q Datasheet Number: DS36981 Rev. 2 - 2 4 of 7 www.diodes.com 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 2 Typical DC Current Gain vs. Collector Current May 2015 © Diodes Incorporated BCP5616Q VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1.2 0.4 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1.0 0.8 0.6 0.4 0.2 0.1 0 0.0001 0 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 3 Typical Base-Emitter Turn-On Voltage vs. Collector Current 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 140 1.0 120 0.8 CAPACITANCE (pF) VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 0.2 0.3 0.6 0.4 100 80 60 40 0.2 20 0 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Saturation Voltage vs. Collector Current 0 0.1 1 10 100 V R, REVERSE VOLTAGE (V) Fig. 6 Typical Capacitance Characteristics fT, GAIN-BANDWIDTH PRODUCT (MHz) 300 250 200 150 100 VCE = 5V f = 100MHz 50 0 0 20 40 60 80 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current BCP5616Q Datasheet Number: DS36981 Rev. 2 - 2 5 of 7 www.diodes.com May 2015 © Diodes Incorporated BCP5616Q Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D Q b1 C E E1 Gauge Plane 0.25 Seating Plane e1 L b 0° e A1 7° 7° A ° 10 SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e 4.60 e1 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Y1 C1 Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 Y2 Y X BCP5616Q Datasheet Number: DS36981 Rev. 2 - 2 C 6 of 7 www.diodes.com May 2015 © Diodes Incorporated BCP5616Q IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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