Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR General Description Features The AP2122 series are positive voltage regulator ICs fabricated by CMOS process. Each of these ICs consists of a voltage reference, an error amplifier, a resistor network for setting output voltage, a current limit circuit for current protection and a chip enable circuit . · · · · · The AP2122 series feature high ripple rejection, low dropout voltage, low noise, high output voltage accuracy, and low current consumption which make them ideal for use in various battery-powered devices. · · · · · · The AP2122 series have 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.2V and 3.3V versions. The AP2122 are available in standard SOT-23-5 package. AP2122 Low Dropout Voltage at IOUT=100mA: 150mV Typical (Except 1.5V Version) Low Standby Current: 0.1µA Typical Low Quiescent Current: 25µA Typical High Ripple Rejection: 70dB Typical（f=10kHz） Maximum Output Current: More Than 150mA (300mA Limit) Extremely Low Noise: 30µVrms (10Hz to 100kHz) Excellent Line Regulation: 4mV Typical Excellent Load Regulation: 12mV Typical High Output Voltage Accuracy: ±2% Excellent Line and Load Transient Response Compatible with Low ESR Ceramic Capacitor (as Low as 1µF) Applications · · · · · · Mobile Phones, Cordless Phones MP3/4 Portable Electronic Devices Cameras, Video Recorders Sub-board Power Supplies for Telecom Equipment Battery Powered Equipment SOT-23-5 Figure 1. Package Type of AP2122 May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 1 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Pin Configuration K Package (SOT-23-5) VOUT 1 GND 2 VIN 3 5 NC 4 CE Figure 2. Pin Configuration of AP2122 (Top View) Pin Description Pin Number Pin Name Function 1 VOUT Regulated output voltage 2 GND Ground 3 VIN Input voltage 4 CE Active high enable input pin. Logic high=enable, logic low=shutdown 5 NC No connection May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 2 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Functional Block Diagram VIN 1 3 VOUT VREF CURRENT LIMIT CE 4 2 GND Figure 3. Functional Block Diagram of AP2122 May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 3 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Ordering Information AP2122 E1: Lead Free G1: Green Circuit Type TR: Tape and Reel A: Active High (Pull-down resistor built-in) 1.5: 1.8: 2.5: 2.8: 3.0: 3.2: 3.3: Package K: SOT-23-5 Package SOT-23-5 Temperature Range -40 to 85oC Condition Fixed Output 1.5V Fixed Output 1.8V Fixed Output 2.5V Fixed Output 2.8V Fixed Output 3.0V Fixed Output 3.2V Fixed Output 3.3V Part Number Lead Free Green Marking ID Lead Free Green Packing Type Active High (Pull-down resistor built-in) AP2122AK-1.5TRE1 AP2122AK-1.5TRG1 E2Z G2Z Tape & Reel Active High (Pull-down resistor built-in) AP2122AK-1.8TRE1 AP2122AK-1.8TRG1 E2U G2U Tape & Reel Active High (Pull-down resistor built-in) AP2122AK-2.5TRE1 AP2122AK-2.5TRG1 E2V G2V Tape & Reel Active High (Pull-down resistor built-in) AP2122AK-2.8TRE1 AP2122AK-2.8TRG1 E2W G2W Tape & Reel Active High (Pull-down resistor built-in) AP2122AK-3.0TRE1 AP2122AK-3.0TRG1 E2X G2X Tape & Reel Active High (Pull-down resistor built-in) AP2122AK-3.2TRE1 AP2122AK-3.2TRG1 E3Y G3Y Tape & Reel Active High (Pull-down resistor built-in) AP2122AK-3.3TRE1 AP2122AK-3.3TRG1 E2Y G2Y Tape & Reel BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages. May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 4 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Input Voltage VIN 6.5 V Enable Input Voltage VCE -0.3 to VIN+0.3 V Output Current IOUT 300 mA TJ 150 oC TSTG -65 to 150 o C TLEAD 260 o C Thermal Resistance (Note 2) θJA 250 oC/W ESD (Human Body Model) ESD 2000 V ESD (Machine Model) ESD 200 V Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10sec) Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Note 2: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the device outside of its operating ratings. The maximum allowable power dissipation is a function of the maximum junction temperature, TJ(max), the junction-to-ambient thermal resistance, θJA, and the ambient temperature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using: PD(max)=(TJ(max) TA)/θJA. Exceeding the maximum allowable power dissipation will result in excessive die temperature. Recommended Operating Conditions Parameter Symbol Min Max Unit Input Voltage VIN 2 6 V TJ -40 85 oC Operating Junction Temperature Range May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 5 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Electrical Characteristics AP2122-1.5 Electrical Characteristics (VIN=2.5V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Symbol VOUT Input Voltage VIN Output Current IOUT Conditions VIN=2.5V 1mA≤IOUT≤30mA VIN-VOUT=1V Min Typ Max Unit 1.47 1.5 1.53 V 6 V 150 mA Load Regulation VRLOAD VIN=2.5V 1mA≤IOUT≤80mA 12 40 mV Line Regulation VRLINE 2.3V≤VIN≤6V IOUT=30mA 4 16 mV IOUT=10mA 400 600 Dropout Voltage VDROP IOUT=100mA 400 600 IOUT=150mA 400 600 VIN=2.5V, IOUT=0mA 25 50 µA 1 µA Quiescent Current IQ mV Standby Current ISTD VIN=2.5V VCE in OFF mode 0.1 Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p, f=10kHz VIN=2.5V 70 dB ±150 µV/oC ±100 ppm/oC 50 mA 30 µVrms Output Voltage Temperature Coefficient Short Current Limit RMS Output Noise ∆VOUT/∆T (∆VOUT/VOUT)/∆T ILIMIT VNOISE IOUT=30mA VOUT=0V o TA=25 C 10Hz ≤f≤100kHz CE "High" Voltage CE input voltage "High" CE "Low" Voltage CE input voltage "Low" CE Pull-down Internal Resistance RPD Thermal Resistance (Junction to Case) θJC 1.5 2.5 SOT-23-5 May. 2010 Rev. 1. 5 V 5 73.9 0.25 V 10 MΩ o C/W BCD Semiconductor Manufacturing Limited 6 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Electrical Characteristics (Continued) AP2122-1.8 Electrical Characteristics (VIN=2.8V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Symbol VOUT Input Voltage VIN Output Current IOUT Conditions VIN=2.8V 1mA≤IOUT≤30mA VIN-VOUT=1V Min Typ Max Unit 1.764 1.8 1.836 V 6 V 150 mA Load Regulation VRLOAD VIN=2.8V 1mA≤IOUT≤80mA 12 40 mV Line Regulation VRLINE 2.3V≤VIN≤6V IOUT=30mA 4 16 mV Dropout Voltage VDROP Quiescent Current IQ IOUT=10mA 20 40 IOUT=100mA 150 300 IOUT=150mA 200 400 VIN=2.8V, IOUT=0mA 25 50 µA 1 µA mV Standby Current ISTD VIN=2.8V VCE in OFF mode 0.1 Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p, f=10kHz VIN=2.8V 70 dB ±180 µV/oC ±100 ppm/oC 50 mA 30 µVrms Output Voltage Temperature Coefficient Short Current Limit RMS Output Noise ∆VOUT/∆T (∆VOUT/VOUT)/∆T ILIMIT VNOISE IOUT=30mA VOUT=0V o TA=25 C 10Hz ≤f≤100kHz CE "High" Voltage CE input voltage "High" CE "Low" Voltage CE input voltage "Low" CE Pull-down Internal Resistance RPD Thermal Resistance (Junction to Case) θJC 1.5 2.5 SOT-23-5 May. 2010 Rev. 1. 5 V 5 73.9 0.25 V 10 MΩ o C/W BCD Semiconductor Manufacturing Limited 7 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Electrical Characteristics (Continued) AP2122-2.5 Electrical Characteristics (VIN=3.5V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Symbol VOUT Input Voltage VIN Output Current IOUT Conditions VIN=3.5V 1mA≤IOUT≤30mA VIN-VOUT=1V Min Typ Max Unit 2.45 2.5 2.55 V 6 V 150 mA Load Regulation VRLOAD VIN=3.5V 1mA≤IOUT≤80mA 12 40 mV Line Regulation VRLINE 3V≤VIN≤6V IOUT=30mA 4 16 mV IOUT=10mA 20 40 Dropout Voltage VDROP IOUT=100mA 150 300 IOUT=150mA 200 400 VIN=3.5V, IOUT=0mA 25 50 µA VIN=3.5V VCE in OFF mode 0.1 1 µA Ripple 0.5Vp-p, f=10kHz VIN=3.5V 70 dB ±250 µV/oC ±100 ppm/oC 50 mA 30 µVrms Quiescent Current IQ Standby Current ISTD Power Supply Rejection Ratio PSRR Output Voltage Temperature Coefficient Short Current Limit RMS Output Noise ∆VOUT/∆T (∆VOUT/VOUT)/∆T ILIMIT VNOISE IOUT=30mA VOUT=0V o TA=25 C 10Hz ≤f≤100kHz CE "High" Voltage CE input voltage "High" CE "Low" Voltage CE input voltage "Low" CE Pull-down Internal Resistance RPD Thermal Resistance (Junction to Case) θJC 1.5 2.5 SOT-23-5 May. 2010 Rev. 1. 5 mV V 5 73.9 0.25 V 10 MΩ o C/W BCD Semiconductor Manufacturing Limited 8 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Electrical Characteristics (Continued) AP2122-2.8 Electrical Characteristics (VIN=3.8V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Symbol VOUT Input Voltage VIN Output Current IOUT Conditions VIN=3.8V 1mA≤IOUT≤30mA VIN-VOUT=1V Min Typ Max Unit 2.744 2.8 2.856 V 6 V 150 mA Load Regulation VRLOAD VIN=3.8V 1mA≤IOUT≤80mA 12 40 mV Line Regulation VRLINE 3.3V≤VIN≤6V IOUT=30mA 4 16 mV Dropout Voltage VDROP Quiescent Current IQ IOUT=10mA 20 40 IOUT=100mA 150 300 IOUT=150mA 200 400 VIN=3.8V, IOUT=0mA 25 50 µA 1 µA mV Standby Current ISTD VIN=3.8V VCE in OFF mode 0.1 Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p, f=10kHz VIN=3.8V 70 dB ±280 µV/oC ±100 ppm/oC 50 mA 30 µVrms Output Voltage Temperature Coefficient Short Current Limit RMS Output Noise ∆VOUT/∆T (∆VOUT/VOUT)/∆T ILIMIT VNOISE IOUT=30mA VOUT=0V o TA=25 C 10Hz ≤f≤100kHz CE "High" Voltage CE input voltage "High" CE "Low" Voltage CE input voltage "Low" CE Pull-down Internal Resistance RPD Thermal Resistance (Junction to Case) θJC 1.5 2.5 SOT-23-5 May. 2010 Rev. 1. 5 V 5 73.9 0.25 V 10 MΩ o C/W BCD Semiconductor Manufacturing Limited 9 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Electrical Characteristics (Continued) AP2122-3.0 Electrical Characteristics (VIN=4V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Symbol VOUT Input Voltage VIN Output Current IOUT Conditions VIN=4V 1mA≤IOUT≤30mA VIN-VOUT=1V Min Typ Max Unit 2.94 3.0 3.06 V 6 V 150 mA Load Regulation VRLOAD VIN=4V 1mA≤IOUT≤80mA 12 40 mV Line Regulation VRLINE 3.5V≤VIN≤6V IOUT=30mA 4 16 mV IOUT=10mA 20 40 IOUT=100mA 150 300 IOUT=150mA 200 400 VIN=4V, IOUT=0mA 25 50 µA VIN=4V VCE in OFF mode 0.1 1 µA Ripple 0.5Vp-p, f=10kHz VIN=4V 70 dB ±300 µV/oC ±100 ppm/oC Dropout Voltage Quiescent Current VDROP IQ Standby Current ISTD Power Supply Rejection Ratio PSRR Output Voltage Temperature Coefficient ∆VOUT/∆T (∆VOUT/VOUT)/∆T IOUT=30mA mV Short Current Limit ILIMIT VOUT=0V 50 mA RMS Output Noise VNOISE TA=25oC 10Hz ≤f≤100kHz 30 µVrms CE "High" Voltage CE input voltage "High" CE "Low" Voltage CE input voltage "Low" CE Pull-down Internal Resistance RPD Thermal Resistance (Junction to Case) θJC 1.5 2.5 SOT-23-5 May. 2010 Rev. 1. 5 V 5 73.9 0.25 V 10 MΩ o C/W BCD Semiconductor Manufacturing Limited 10 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Electrical Characteristics (Continued) AP2122-3.2 Electrical Characteristics (VIN=4.2V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Symbol VOUT Input Voltage VIN Output Current IOUT Conditions VIN=4.2V 1mA≤IOUT≤30mA VIN-VOUT=1V Min Typ Max Unit 3.136 3.2 3.264 V 6 V 150 mA Load Regulation VRLOAD VIN=4.2V 1mA≤ IOUT≤ 80mA 12 40 mV Line Regulation VRLINE 3.7V≤VIN≤6V IOUT=30mA 4 16 mV Dropout Voltage VDROP Quiescent Current IQ IOUT=10mA 20 40 IOUT=100mA 150 300 IOUT=150mA 200 400 VIN=4.2V, IOUT=0mA 25 50 µA 1 µA mV Standby Current ISTD VIN=4.2V VCE in OFF mode 0.1 Power Supply Rejection Ratio PSRR Ripple 0.5Vp-p, f=10kHz VIN=4.2V 70 dB ±320 µV/oC ±100 ppm/oC 50 mA 30 µVrms Output Voltage Temperature Coefficient Short Current Limit RMS Output Noise ∆VOUT/∆T (∆VOUT/VOUT)/∆T ILIMIT VNOISE IOUT=30mA VOUT=0V o TA=25 C 10Hz ≤f≤100kHz CE "High" Voltage CE input voltage "High" CE "Low" Voltage CE input voltage "Low" CE Pull-down Internal Resistance RPD Thermal Resistance (Junction to Case) θJC 1.5 2.5 SOT-23-5 May. 2010 Rev. 1. 5 V 5 73.9 0.25 V 10 MΩ o C/W BCD Semiconductor Manufacturing Limited 11 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Electrical Characteristics (Continued) AP2122-3.3 Electrical Characteristics (VIN=4.3V, TJ=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Symbol VOUT Input Voltage VIN Output Current IOUT Conditions VIN=4.3V 1mA≤IOUT≤30mA VIN-VOUT=1V Min Typ Max Unit 3.234 3.3 3.366 V 6 V 150 mA Load Regulation VRLOAD VIN=4.3V 1mA≤ IOUT≤ 80mA 12 40 mV Line Regulation VRLINE 3.8V≤VIN≤6V IOUT=30mA 4 16 mV IOUT=10mA 20 40 Dropout Voltage VDROP IOUT=100mA 150 300 IOUT=150mA 200 400 VIN=4.3V, IOUT=0mA 25 50 µA VIN=4.3V VCE in OFF mode 0.1 1 µA Ripple 0.5Vp-p, f=10kHz VIN=4.3V 70 dB ±330 µV/oC ±100 ppm/oC 50 mA 30 µVrms Quiescent Current IQ Standby Current ISTD Power Supply Rejection Ratio PSRR Output Voltage Temperature Coefficient Short Current Limit RMS Output Noise ∆VOUT/∆T (∆VOUT/VOUT)/∆T ILIMIT VNOISE IOUT=30mA VOUT=0V o TA=25 C 10Hz ≤f≤100kHz CE "High" Voltage CE input voltage "High" CE "Low" Voltage CE input voltage "Low" CE Pull-down Internal Resistance RPD Thermal Resistance (Junction to Case) θJC 1.5 2.5 SOT-23-5 May. 2010 Rev. 1. 5 mV V 5 73.9 0.25 V 10 MΩ o C/W BCD Semiconductor Manufacturing Limited 12 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Typical Performance Characteristics 3.5 1.5 3.0 Output Voltage (V) Output Voltage (V) 1.2 0.9 0.6 AP2122-1.5 VIN=2.0V VIN=2.5V 0.3 50 100 150 200 250 300 VIN=6V 1.5 1.0 0.0 0 VIN=4V 2.0 0.5 VIN=3.0V 0.0 AP2122-3.0 VIN=3.3V 2.5 350 0 50 100 150 200 250 300 350 Output Current (mA) Output Current (mA) Figure 4. Output Voltage vs. Output Current Figure 5. Output Voltage vs. Output Current 3.50 1.50 3.25 Output Voltage (V) Output Voltage (V) 1.25 1.00 0.75 0.50 AP2122-1.5 IOUT=30mA 0.25 0.00 3.00 2.75 2.50 2.00 0 1 2 3 4 5 6 AP2122-3.0 IOUT=30mA 2.25 7 0 1 2 3 4 5 6 7 Input Voltage (V) Input Voltage (V) Figure 6. Output Voltage vs. Input Voltage Figure 7. Output Voltage vs. Input Voltage May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 13 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 0.6 0.6 0.5 0.5 Dropout Voltage (V) Dropout Voltage (V) Typical Performance Characteristics (Continued) 0.4 0.3 Minimum Operating Requirement 0.2 0.1 0.0 0.4 0.3 0.2 0.1 AP2122-1.5 0.0 0 40 80 120 160 200 AP2122-3.0 0 40 80 3.10 1.58 3.08 1.56 3.06 1.54 3.04 Output Voltage (V) Output Voltage (V) 1.60 1.52 1.50 1.48 1.44 AP2122-1.5 VIN=2.5V 1.42 IOUT=30mA 3.02 3.00 2.98 2.96 2.94 AP2122-3.0 VIN=4V 2.92 IOUT=30mA 2.90 -25 0 25 50 200 Figure 9. Dropout Voltage vs. Output Current Figure 8. Dropout Voltage vs. Output Current 1.40 160 Output Current (mA) Output Current (mA) 1.46 120 75 100 125 -25 0 25 50 75 100 125 o o Junction Temperature ( C) Junction Temperature ( C) Figure 10. Output Voltage vs. Junction Temperature Figure 11. Output Voltage vs. Junction Temperature May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 14 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 60 60 50 50 Supply Current (µA) Supply Current (µA) Typical Performance Characteristics (Continued) 40 30 20 AP2122-1.5 IOUT=0mA 10 0 0 1 2 3 4 5 40 30 20 AP2122-3.0 IOUT=0mA 10 6 0 7 0 1 2 40 40 35 35 30 30 25 20 15 AP2122-1.5 VIN=2.5V 0 0 25 50 6 7 25 20 15 75 100 AP2122-3.0 VIN=4V IOUT=0mA 5 0 -25 5 10 IOUT=0mA 5 4 Figure 13. Supply Current vs. Input Voltage Supply Current (µA) Supply Current (µA) Figure 12. Supply Current vs. Input Voltage 10 3 Input Voltage (V) Input Voltage (V) 125 -25 0 25 50 75 100 125 o o Junction Temperature ( C) Junction Temperature ( C) Figure 14. Supply Current vs. Junction Temperature Figure 15. Supply Current vs. Junction Temperature May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 15 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Typical Performance Characteristics (Continued) 7 5.5 6 VIN (1V/Div) AP2122-1.5 3.5 2.5 ∆VOUT (0.05V/Div) ∆VOUT (0.05V/Div) VIN (1V/Div) 4.5 0.05 0 -0.05 5 4 0.05 0 -0.05 -0.1 -0.1 Time (20µs/Div) Time (40µs/Div) Figure 17. Line Transient (Conditions: IOUT=30mA, CIN=1µF, COUT=1µF) Figure 16. Line Transient (Conditions: IOUT=30mA, CIN=1µF, COUT=1µF) 3.2 VOUT (0.1V/Div) AP2122-1.5 1.6 1.5 1.4 IOUT (100mA/Div) VOUT (0.1V/Div) 1.7 IOUT (50mA/Div) AP2122-3.0 100 50 0 -50 AP2122-3.0 3.1 3.0 2.9 200 100 0 -100 Time (200µs/Div) Time (200µs/Div) Figure 19. Load Transient (Conditions: VIN=4V, CIN=1µF, COUT=1µF) Figure 18. Load Transient (Conditions: VIN=2.5V, CIN=1µF, COUT=1µF) May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 16 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Typical Performance Characteristics (Continued) 100 100 AP2122-1.5 VIN=2.5V 80 80 IOUT=30mA CIN=COUT=1µF IOUT=30mA CIN=COUT=1µF 70 60 PSRR (dB) PSRR (dB) AP2122-3.0 VIN=4V 90 40 60 50 40 30 20 20 10 0 10 100 1k 10k 100k 0 10 1M Frequency (Hz) 100 1k 10k 100k Frequency (Hz) Figure 20. PSRR vs. Frequency Figure 21. PSRR vs. Frequency May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 17 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Typical Application VIN AP2122-3.0 VIN =4V VIN VOUT =3V VOUT VOUT GND COUT NC CE 1µF CIN 1µF Note: Filter capacitors are required at the AP2122's input and output. 1µF capacitor is required at the input. The minimum output capacitance required for stability should be more than 1µF with ESR from 0.01Ω to 100Ω. Ceramic capacitors are recommended. Figure 22. Typical Application of AP2122 May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 18 Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR AP2122 Mechanical Dimensions SOT-23-5 Unit: mm(inch) 0.300(0.012) 0.600(0.024) 1.500(0.059) 1.700(0.067) 0.100(0.004) 0.200(0.008) 2.950(0.116) 2.650(0.104) 2.820(0.111) 3.020(0.119) 0.200(0.008) 0.700(0.028) REF 0.300(0.012) 0.400(0.016) 0° 8° 1.800(0.071) 2.000(0.079) 0.000(0.000) MAX 1.450(0.057) 0.950(0.037) TYP 0.150(0.006) 0.900(0.035) 1.300(0.051) May. 2010 Rev. 1. 5 BCD Semiconductor Manufacturing Limited 19 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited does does not not assume assume any any responsibility responsibility for for use use of of any any its its products products for for any any particular purpose, particular purpose, nor nor does does BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited assume assume any any liability liability arising arising out out of of the the application application or or use use of any of any its its products products or or circuits. circuits. BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited does does not not convey convey any any license license under under its its patent patent rights rights or or other rights other rights nor nor the the rights rights of of others. others. MAIN SITE SITE MAIN - Headquarters BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-basedLimited Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Tel: Fax: +86-21-24162277 800,+86-21-24162266, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 REGIONAL SALES OFFICE Shenzhen OfficeSALES OFFICE REGIONAL - Wafer FabSemiconductor Manufacturing Limited BCD Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. - IC Design Group 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 1491,YiFax: 0008200233, China 8F, Zone B, 900, Shan+86-21-5450 Road, Shanghai Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 Taiwan Office Shanghai Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Semiconductor Shenzhen SIM-BCD Office Office (Taiwan) Company Limited Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan Shenzhen, 4F, 298-1, Guang Road,(Taiwan) Nei-Hu District, Taipei, Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.District, Shenzhen Office BCDRui Semiconductor Company Limited China Taiwan Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Tel: +86-755-8826 Tel: +886-2-2656 2808 Room E, 5F, Noble 7951 Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Taiwan Fax: +86-755-88267951 7865 Fax: +886-2-2656 28062808 Tel: +86-755-8826 Tel: +886-2-2656 Fax: +86-755-8826 7865 Fax: +886-2-2656 2806 USA Office BCD Office Semiconductor Corp. USA 30920Semiconductor Huntwood Ave.Corporation Hayward, BCD CA 94544, USA Ave. Hayward, 30920 Huntwood Tel :94544, +1-510-324-2988 CA U.S.A Fax:: +1-510-324-2988 +1-510-324-2788 Tel Fax: +1-510-324-2788