DMG4466SSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) max ID max TA = +25°C Low On-Resistance Low Input Capacitance 23mΩ @ VGS = 10V 10A Fast Switching Speed 8A Low Input/Output Leakage V(BR)DSS 30V Features and Benefits 33mΩ @ VGS = 4.5V Low Gate Resistance Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it Qualified to AEC-Q101 Standards for High Reliability ideal for high efficiency power management applications. Mechanical Data Applications Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. Backlighting Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Connections Indicator: See diagram UL Flammability Classification Rating 94V-0 Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 SO-8 S D S D S D G D G S (Note 4) Part Number DMG4466SSS-13 Notes: D Equivalent circuit Top View Internal Schematic Top View Ordering Information Weight: 0.074 grams (approximate) Case SO-8 Packaging 2500 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 8 5 G4466SS G4466SS YY WW YY WW 1 4 Chengdu A/T Site DMG4466SSS Document number: DS32137 Rev. 4 - 2 = Manufacturer’s Marking G4466SS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 13 = 2013) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site) 1 4 Shanghai A/T Site 1 of 6 www.diodes.com September 2013 © Diodes Incorporated DMG4466SSS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Unit Drain-Source Voltage Characteristic VDSS 30 V Gate-Source Voltage VGSS ±25 V ID 10 6 A IDM 60 A Continuous Drain Current (Note 5) Steady State TA = +25°C TA = +85°C Pulsed Drain Current (Note 5) Avalanche Current (Notes 6) IAR 16 A Repetitive Avalanche Energy (Notes 6) L = 0.1mH EAR 12.8 mJ Symbol Value Unit PD 1.42 W RθJA 88.4 °C/W TJ, TSTG -55 to +150 °C Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 30 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS — — 1 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±25V, VDS = 0V VGS(th) 1.0 1.45 2.4 V VDS = VGS, ID = 250μA — 15 25 23 33 mΩ |Yfs| — 2.5 — S VDS = 5V, ID = 10A VSD — 0.69 1 V VGS = 0V, IS = 1A Input Capacitance Ciss — 478.9 — pF Output Capacitance Coss — 96.7 — pF Reverse Transfer Capacitance Crss — 61.4 — pF Gate Resistance Rg 0.4 1.1 1.6 Ω Total Gate Charge (VGS = 4.5V) Qg — 5.0 8 Total Gate Charge (VGS = 10V) Qg — 10.5 17 Gate-Source Charge Qgs — 1.8 — nC Gate-Drain Charge Qgd — 1.6 — nC Turn-On Delay Time tD(on) — 2.9 — ns Turn-On Rise Time tr — 7.9 — ns tD(off) — 14.6 — ns tf — 3.1 — ns ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage RDS (ON) VGS = 10V, ID = 10A VGS = 4.5V, ID = 7.5A DYNAMIC CHARACTERISTICS (Note 8) Turn-Off Delay Time Turn-Off Fall Time Notes: VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 15V, VGS = 10V, ID = 10A VGS = 10V, VDS = 15V, RG = 3Ω, RL = 1.5Ω 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMG4466SSS Document number: DS32137 Rev. 4 - 2 2 of 6 www.diodes.com September 2013 © Diodes Incorporated DMG4466SSS 30 20 VGS = 10V VDS = 5V VGS = 4.5V 20 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS = 4.0V 15 VGS = 3.5V 10 5 15 10 VGS = 150°C VGS = 125°C VGS = 85°C 5 VGS = 3.0V VGS = 25°C VGS = 2.5V 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 0.05 0.04 VGS = 3.5V 0.03 VGS = 4.5V 0.02 VGS = 10V 0.01 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.7 VGS = 4.5V ID = 5A 1.5 VGS = 10V ID = 10A 1.3 1.1 0.9 0.7 0.5 -50 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 RDSON, DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 VGS = -55°C -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMG4466SSS Document number: DS32137 Rev. 4 - 2 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 4 0.04 VGS = 10V 0.03 TA = 150°C TA = 125°C TA = 85°C 0.02 TA = 25°C TA = -55°C 0.01 0 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.06 0.05 0.04 VGS = 4.5V ID = 5A 0.03 0.02 VGS = 10V ID = 10A 0.01 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 3 of 6 www.diodes.com September 2013 © Diodes Incorporated DMG4466SSS 20 18 1.8 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 2.0 1.6 ID = 1mA 1.4 1.2 ID = 250µA 1.0 0.8 TA = 25°C 12 10 8 6 4 2 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 1,000 IDSS, LEAKAGE CURRENT (nA) 100 Coss Crss 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 10,000 f = 1MHz Ciss C, CAPACITANCE (pF) 14 30 T A = 150°C 1,000 T A = 125°C 100 T A = 85°C 10 TA = 25°C 1 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 30 VGS, GATE-SOURCE VOLTAGE (V) 10 8 VDS = 15V ID = 10A 6 4 2 0 0 2 4 6 8 10 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMG4466SSS Document number: DS32137 Rev. 4 - 2 12 4 of 6 www.diodes.com September 2013 © Diodes Incorporated DMG4466SSS r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 90°C/W D = 0.02 0.01 P(pk) D = 0.01 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 t1 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 10 100 1,000 Package Outline Dimensions 0.254 Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. E1 E A1 L SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm Gauge Plane Seating Plane Detail ‘A’ h 7°~9° 45° Detail ‘A’ A2 A A3 b e D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version. X Dimensions X Y C1 C2 C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMG4466SSS Document number: DS32137 Rev. 4 - 2 5 of 6 www.diodes.com September 2013 © Diodes Incorporated DMG4466SSS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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