Datasheet - Diodes Incorporated

DMN4008LFG
40V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Features and Benefits
V(BR)DSS
RDS(ON) max
40V
7.5mΩ @ VGS = 10V
10mΩ @ VGS = 4.5V
ID max
TA = +25°C
14.4A
12.5A
•
Power Management Functions
•
DC-DC Converters
Occupies Just 33% of the Board Area Occupied by SO-8 Enabling
Smaller End Product
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
ideal for high efficiency power management applications.
Backlighting
Low RDS(ON) – ensures on state losses are minimized
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
•
•
•
•
Description and Applications
•
•
®
Case: POWERDI 3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections Indicator: See diagram
•
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.072 grams (approximate)
®
POWERDI 3333-8
S
D
Pin 1
S
S
G
G
D
D
D
D
S
Bottom View
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN4008LFG-7
DMN4008LFG-13
Notes:
Case
®
POWERDI 3333-8
®
POWERDI 3333-8
Packaging
2000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
YYWW
ADVANCE INFORMATION
NEW PRODUCT
Product Summary
N47= Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 13 = 2013)
WW = Week code (01 ~ 53)
N47
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DMN4008LFG
Document number: DS36908 Rev. 2 - 2
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July 2014
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DMN4008LFG
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
ADVANCE INFORMATION
NEW PRODUCT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Steady
State
t<10s
Value
40
±20
14.4
11.6
ID
A
19.2
15.4
90
3
38
75
ID
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current, L = 0.1mH
Avalanche Energy, L = 0.1mH
Units
V
V
IDM
IS
IAS
EAS
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
Total Power Dissipation (Note 5)
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
Value
1.0
119
66
2.3
53
30
6.1
-55 to +150
RθJA
Total Power Dissipation (Note 6)
PD
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
RθJA
RθJC
TJ, TSTG
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
40
—
—
—
—
—
—
1
±100
V
µA
nA
VGS = 0V, ID = 250μA
VDS = 40V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
RDS (ON)
3
7.5
10
20
1.1
mΩ
VSD
—
5.5
7
—
0.7
V
Static Drain-Source On-Resistance
1
—
—
—
—
VDS = VGS, ID = 250μA
VGS = 10V, ID = 10A
VGS = 4.5V, ID = 8A
VGS = 3.3V, ID = 6A
VGS = 0V, IS = 1A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3537
257
215
0.9
34
74
10.2
12.5
8.2
14.1
69.7
24.4
18.5
12.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
nS
nC
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
V
Test Condition
VDS = 20V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 20V, ID = 10A
VGS = 10V, VDS = 20V,
RG = 6Ω, ID = 10A
IF = 10A, di/dt = 100A/μs
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated
DMN4008LFG
Document number: DS36908 Rev. 2 - 2
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www.diodes.com
July 2014
© Diodes Incorporated
DMN4008LFG
30.0
27.0
24
VGS = 3.0V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 4.0V
21.0
VGS = 3.5V
18.0
15.0
12.0
9.0
21
18
TA = 85°C
9
TA = 25°C
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.012
VGS = 3.3V
0.01
VGS = 4.5V
VGS = 10V
0.006
0.004
0.002
0
0.011
2
4
6
8 10 12 14 16 18
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.5
2
2.5
3
3.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
ID = 10.0A
0.035
ID = 8.0A
0.03
0.025
0.02
0.015
0.01
0.005
20
0
0
2
4
6
8 10 12 14 16 18
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
TA = 150°C
TA = 125°C
0.008
TA = 85°C
0.007
0.006
TA = 25°C
0.005
0.004
TA = -55°C
0.003
2
4
20
1.8
0.009
0
1
0.04
VGS = 10V
0.01
0.002
0
5
0.014
0.008
TA = -55°C
3
VGS = 2.5V
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
TA = 125°C
12
6
3.0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
TA = 150°C
15
6.0
0.0
VDS = 5.0V
27
VGS = 4.5V
24.0
ADVANCE INFORMATION
NEW PRODUCT
30
VGS = 10V
4
6
8 10 12 14 16 18
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
20
VGS = 10V
ID = 10A
1.6
VGS = 4.5V
ID = 8.0A
1.4
VGS = 3.3V
ID = 6.0A
1.2
1
0.8
0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
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DMN4008LFG
Document number: DS36908 Rev. 2 - 2
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0.016
0.014
VGS(th), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
2.2
0.018
VGS = 3.3V
ID = 6.0A
0.012
VGS = 4.5V
ID = 8.0A
0.01
0.008
0.006
VGS = 10V
ID = 10A
0.004
0.002
0
-50
ID = 1mA
1.8
1.6
ID = 250µA
1.4
1.2
1
-25
0
25
50
75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation
vs. Ambient Temperature
CT, JUNCTION CAPACITANCE (pF)
27
24
21
TA = 150°C
18
TA = 125°C
15
TA = 25°C
9
C iss
1000
T A = 85°C
12
T A = -55°C
6
C oss
3
0
C rss
0
100
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
f = 1MHz
0
5
10
15
20
25
30
35
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
40
1000
10
RDS(ON)
Limited
VDS = 20V
ID = 10A
8
ID, DRAIN CURRENT (A)
100
6
4
2
0
150
10000
30
IS, SOURCE CURRENT (A)
2
0.8
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 On-Resistance Variation with Temperature
VGS GATE THRESHOLD VOLTAGE (V)
ADVANCE INFORMATION
NEW PRODUCT
DMN4008LFG
10
DC
10
20
30
40
50
60
70
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
80
PW = 1s
PW = 100ms
0.1
0
PW = 10s
1
TJ(max) = 150°C
TA = 25°C
VGS = 10V
Single Pulse
DUT on 1 * MRP Board
0.01
0.01
PW = 10ms
PW = 1ms
PW = 100µs
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
POWERDI is a registered trademark of Diodes Incorporated
DMN4008LFG
Document number: DS36908 Rev. 2 - 2
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July 2014
© Diodes Incorporated
DMN4008LFG
r(t), TRANSIENT THERMAL RESISTANCE
ADVANCE INFORMATION
NEW PRODUCT
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RθJA(t) = r(t) * RθJA
RθJA = 118°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
100
1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
®
A
POWERDI 3333-8
Dim Min Max Typ
D
3.25 3.35 3.30
E
3.25 3.35 3.30
D2 2.22 2.32 2.27
E2 1.56 1.66 1.61
A
0.75 0.85 0.80
A1
0
0.05 0.02
A3
0.203
−
−
b
0.27 0.37 0.32
b2
0.20
−
−
L
0.35 0.45 0.40
L1
0.39
−
−
e
0.65
−
−
Z
0.515
−
−
All Dimensions in mm
A3
A1
D
D2
1
Pin 1 ID
L
(4x)
4
b2
(4x)
E
E2
8
Z (4x)
5
e
L1
(3x)
b (8x)
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
G
Y2
8
5
G1
Y1
Y
1
4
Y3
X2
Dimensions
C
G
G1
Y
Y1
Y2
Y3
X
X2
Value (in mm)
0.650
0.230
0.420
3.700
2.250
1.850
0.700
2.370
0.420
C
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DMN4008LFG
Document number: DS36908 Rev. 2 - 2
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July 2014
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ADVANCE INFORMATION
NEW PRODUCT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
POWERDI is a registered trademark of Diodes Incorporated
DMN4008LFG
Document number: DS36908 Rev. 2 - 2
6 of 6
www.diodes.com
July 2014
© Diodes Incorporated