DMG4407SSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) max ID max TA = +25°C 11mΩ @ VGS = -20V -9.9A 17mΩ @ VGS = -6V -8.2A V(BR)DSS NEW PRODUCT -30V Features and Benefits Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Applications Backlighting Power Management Functions DC-DC Converters Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.075 grams (approximate) D SO-8 ESD PROTECTED S D S D S D G D Top View Top View G Gate Protection Diode S Equivalent Circuit Ordering Information (Note 4) Part Number DMG4407SSS-13 Notes: Case SO-8 Packaging 2500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 8 5 G4407SS G4407SS YY WW YY WW 1 4 Chengdu A/T Site DMG4407SSS Document number: DS35540 Rev. 6 - 2 = Manufacturer’s Marking G4407SS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 13 = 2013) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site) 1 4 Shanghai A/T Site 1 of 6 www.diodes.com September 2013 © Diodes Incorporated DMG4407SSS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = -20V Steady State t<10s Continuous Drain Current (Note 6) VGS = -6V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C ID Value -30 ±25 -9.9 -7.9 ID -12.5 -10.0 A ID -8.2 -6.5 A -11.0 -8.7 3.0 -80 ID Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs pulse, duty cycle = 1%) IS IDM Units V V A A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol PD Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Steady State t<10s RθJA Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Value 1.45 88 50 1.82 70 41 7.6 -50 to 155 PD Steady State t<10s Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range RθJA RθJC TJ, TSTG Units W °C/W °C/W W °C/W °C/W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 — — — — — — -1 ±10 V μA μA VGS = 0V, ID = -250μA VDS = -30V, VGS = 0V VGS = ±25V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD — 9 10 12.7 21 -0.7 -3.0 11 13 17 — -1.0 V Static Drain-Source On-Resistance -1.7 — — — — — VDS = VGS, ID = -250μA VGS = -20V, ID = 12A VGS = -10V, ID = 10A VGS = -6V, ID = 10A VDS = -5V, ID = -10A VGS = 0V, IS = -1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf — — — — — — — — — — — — 2246 352 294 5.1 20.5 41 7.6 8.0 11.3 15.4 38.0 22.0 — — — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = -15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VGS = -10V, VDS = -15V, ID = -12A VDD = -15V, VGS = -10V, RL = 1.25Ω, RG = 3Ω, 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMG4407SSS Document number: DS35540 Rev. 6 - 2 2 of 6 www.diodes.com September 2013 © Diodes Incorporated 30 25 25 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 30 VGS = 10V 20 VGS = 5.0V VGS = 4.5V 15 VGS = 4.0V 10 VGS = 3.5V 20 15 10 TA = 150C 0 0.5 1.0 1.5 -VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics 0 1.0 2.0 0.03 0.02 0.01 0 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(on), DRAIN-SOURCE ON-RESISTANCE () 1.5 1.3 1.1 0.9 0.7 1.5 2.0 2.5 3.0 3.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics VGS= -4.5V 4.0 TA = 150C TA = 125C TA = 85C 0.02 TA = 25C TA = -55 C 0.01 0 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.040 0.036 0.032 0.028 VGS = -4.5V ID = -5A 0.024 0.020 0.016 0.012 VGS = -10V ID = -10A 0.008 0.004 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature Document number: DS35540 Rev. 6 - 2 T A = 25C 0.03 30 1.7 DMG4407SSS TA = 85C TA = 125 C T A = -55C VGS = 3.0V RDS(ON), DRAIN-SOURCE ON-RESISTANCE() RDS(ON),DRAIN-SOURCE ON-RESISTANCE() 0 VDS = -5.0V 5 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) NEW PRODUCT DMG4407SSS 3 of 6 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature September 2013 © Diodes Incorporated 30 2.5 25 -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE(V) 3.0 2.0 1.5 1.0 0.5 20 15 10 5 0 -50 0 0.4 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 10,000 10,000 -IDSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) f = 1MHz C iss 1,000 Coss Crss T A = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 TA = 25°C 100 0 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 1 30 0 5 10 15 20 25 30 -VDS, DRAIN-SOURCE VOLTAGE(V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage 100 10 PW = 10µs RDS(on) Limited 8 -ID, DRAIN CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V) NEW PRODUCT DMG4407SSS 6 4 10 DC 1 PW = 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.1 PW = 100µs 2 0 0 5 10 15 20 25 30 35 40 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMG4407SSS Document number: DS35540 Rev. 6 - 2 45 0.01 0.1 4 of 6 www.diodes.com 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 SOA, Safe Operation Area 100 September 2013 © Diodes Incorporated DMG4407SSS r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 RJA(t) = r(t) * RJA RJA = 72°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 13 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 0.254 NEW PRODUCT 1 E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version. X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMG4407SSS Document number: DS35540 Rev. 6 - 2 5 of 6 www.diodes.com September 2013 © Diodes Incorporated DMG4407SSS IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2013, Diodes Incorporated www.diodes.com DMG4407SSS Document number: DS35540 Rev. 6 - 2 6 of 6 www.diodes.com September 2013 © Diodes Incorporated