TB0640H - TB3500H Green 100A BIDIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE Features Mechanical Data • • • • • • • • • • • • 100A Peak Pulse Current @ 10/1000μs 400A Peak Pulse Current @ 8/20μs 58 - 320V Stand-Off Voltages Oxide-Glass Passivated Junction Bidirectional Protection In a Single Device High Off-State Impedance and Low On-State Voltage Helps Equipment Meet GR-1089-CORE, IEC 61000-4-5, FCC Part 68, ITU-T K.20/K.21, and UL497B UL Listed Under Recognized Component Index, File Number 156346 Lead Free Finish/RoHS Compliant (Note 1) Green Molding Compound (No Halogen and Antimony) (Note 2) • • • • Case: SMB Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Lead Free Plating (Matte Tin Finish). Solderable per MIL-STD-202, Method 208 Polarity: None; Bidirectional Devices Have No Polarity Indicator Weight: 0.093 grams (approximate) Bottom View Top View Ordering Information (Note 3) Part Number TB0640H-13-F TB0720H-13-F TB0900H-13-F TB1100H-13-F TB1300H-13-F TB1500H-13-F TB1800H-13-F TB2300H-13-F TB2600H-13-F TB3100H-13-F TB3500H-13-F Notes: Case SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB SMB Packaging 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes. 2. Product manufactured with Data Code 0924 (week 24, 2009) and newer are built with Green Molding Compound. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information YWW xxxxx TB0640H - TB3500H Document number: DS30360 Rev. 10 - 2 xxxxx = Product type marking code (See table on page 2) = Manufacturers’ code marking YWW = Date code marking Y = Last digit of year (ex: 6 for 2006) WW = Week code (01 to 53) 1 of 6 www.diodes.com May 2011 © Diodes Incorporated TB0640H - TB3500H Maximum Ratings @TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Non-Repetitive Peak Impulse Current Non-Repetitive Peak On-State Current Typical Positive Temperature Coefficient for Breakdown Voltage @10/1000us @8.3ms (one-half cycle) Symbol Ipp ITSM ΔVBR/ΔTJ Value 100 50 0.1 Unit A A %/°C Symbol RθJL RθJA TJ TSTG Value 20 100 -40 to +150 -55 to +150 Unit °C/W °C/W °C °C Thermal Characteristics Characteristic Thermal Resistance, Junction to Lead Thermal Resistance, Junction to Ambient Junction Temperature Range Storage Temperature Range Waveform Standard Ipp (A) 2/10μs GR-1089-CORE 500 8/20μs IEC 61000-4-5 400 10/160μs FCC Part 68 250 10/700μs (Note 4) ITU-T, K.20/K.21 200 10/560μs FCC Part 68 160 10/1000μs GR-1089-CORE 100 Notes: 4. Applied 6kV, 10/700μs waveform IPP, PEAK PULSE CURRENT (%) Maximum Rated Surge Waveform Peak Value (Ipp) tr = rise time to peak value tp = decay time to half value Half Value tr TB0640H - TB3500H Document number: DS30360 Rev. 10 - 2 2 of 6 www.diodes.com tp May 2011 © Diodes Incorporated TB0640H - TB3500H Electrical Characteristics @TA = 25°C unless otherwise specified Part Number TB0640H TB0720H TB0900H TB1100H TB1300H TB1500H TB1800H TB2300H TB2600H TB3100H TB3500H Maximum Rated Repetitive Off-State Voltage Maximum Off-State Leakage Current @ VDRM Maximum Breakover Voltage Maximum On-State Voltage @ IT = 1A VDRM (V) IDRM (uA) VBO (V) VT (V) 58 65 75 90 120 140 160 190 220 275 320 5 5 5 5 5 5 5 5 5 5 5 77 88 98 130 160 180 220 265 300 350 400 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 Symbol VDRM IDRM VBR IBR VBO IBO IH VT IPP CO Notes: Breakover Current IBO Min (mA) 50 50 50 50 50 50 50 50 50 50 50 Holding Current IH Max (mA) 800 800 800 800 800 800 800 800 800 800 800 Min (mA) 150 150 150 150 150 150 150 150 150 150 150 Max (mA) 800 800 800 800 800 800 800 800 800 800 800 Typical Off-State Capacitance Marking Code CO (pF) 200 200 200 120 120 120 120 80 80 80 80 T064H T072H T090H T110H T130H T150H T180H T230H T260H T310H T350H Parameter Stand-off Voltage Leakage current at stand-off voltage Breakdown voltage Breakdown current Breakover voltage Breakover current Holding current (Note 5) On state voltage Peak pulse current Off-state capacitance (Note 6) 5. IH > (VL/RL) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge recovery time does not exceed 30ms. 6. Off-state capacitance measured at f = 1.0MHz, 1.0VRMS signal, VR = 2VDC bias. I IPP IBO IH IBR IDRM VBR VT VDRM TB0640H - TB3500H Document number: DS30360 Rev. 10 - 2 3 of 6 www.diodes.com V VBO May 2011 © Diodes Incorporated TB0640H - TB3500H 1.2 NORMALIZED BREAKDOWN VOLTAGE I(DRM), OFF-STATE CURRENT (uA) 100 10 1 0.1 VDRM = 50V 0.01 1.15 1.1 1.05 1 0.95 0.001 -25 0.9 -50 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 1 Off-State Current vs. Junction Temperature 100 IT, ON-STATE CURRENT (A) NORMALIZED BREAKDOWN VOLTAGE 1.1 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) Fig. 2 Relative Variation of Breakdown Voltage vs. Junction Temperature 1.05 1 10 1 0.95 25 50 75 100 125 150 175 0 -50 -25 TJ, JUNCTION TEMPERATURE (ºC) Fig. 3 Relative Variation of Breakover Voltage vs. Junction Temperature 1.4 1 5 2 2.5 3 3.5 4.5 4 VT, ON-STATE VOLTAGE (V) Fig. 4 On-State Current vs. On-State Voltage 1.5 1 1.2 NORMALIZED CAPACITANCE NORMALIZED HOLDING CURRENT 1.3 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 -50 0.1 -25 25 50 75 100 125 0 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 Relative Variation of Holding Current vs. Junction Temperature TB0640H - TB3500H Document number: DS30360 Rev. 10 - 2 4 of 6 www.diodes.com 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 6 Relative Variation of Junction Capacitance vs. Reverse Voltage Bias May 2011 © Diodes Incorporated TB0640H - TB3500H Package Outline Dimensions B A C D J SMB Dim Min Max A 3.30 3.94 B 4.06 4.57 C 1.96 2.21 D 0.15 0.31 E 5.00 5.59 G 0.05 0.20 H 0.76 1.52 J 2.00 2.50 All Dimensions in mm G H E Suggested Pad Layout C Dimensions Value (in mm) Z 6.8 G 1.8 X 2.3 Y 2.5 C 4.3 X Y G Z TB0640H - TB3500H Document number: DS30360 Rev. 10 - 2 5 of 6 www.diodes.com May 2011 © Diodes Incorporated TB0640H - TB3500H IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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