Data Sheet Switching Diode DAN217U Applications Ultra high speed switching Dimensions (Unit : mm) Land size figure (Unit : mm) 1.3 2.0±0.2 0.65 0.9MIN. Features 1) Ultra small mold type. (UMD3) 2) High reliability. 2.1±0.1 1.25±0.1 (3) 0.8MIN UMD3 (2) Construction Silicon epitaxial planar 0.1Min 0～0.1 (1) （0.65） 1.6 0.3±0.1 各リードとも Each lead has same dimension 0.15±0.05 同寸法 （0.65） Structure 0.7±0.1 1.3±0.1 0.9±0.1 ROHM : UMD3 JEDEC : SOT-323 JEITA : SC-70 dot (year week factory) Taping specifications (Unit : mm) φ1.55±0.05 2.0±0.05 0.3±0.1 Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) IFM Forward current (Single) Average rectified forward current (Single) Io Isurge Surge current (t=1us) Power dissipation Pd Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage φ0.5±0.05 4.0±0.1 Limits 2.4±0.1 8.0±0.2 0～0.1 2.4±0.1 2.25±0.1 0 5.5±0.2 3.5±0.05 1.75±0.1 4.0±0.1 1.25±0.1 Unit V V mA mA A mW °C °C 80 80 300 100 4 200 150 55 to 150 Min. Typ. Max. Unit Conditions IF=100mA - - 1.2 V Reverse current IR - - 0.2 μA VR=70V Capacitance between terminals Reverse recovery time Ct - - 3.5 pF trr - - 4 ns VR=6V , f=1MHz VR=6V , IF=5mA , RL=50 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.06 - Rev.B Data Sheet DAN217U Ta=150℃ 10000 Ta=125℃ 10 Ta=25℃ Ta=150℃ Ta=-25℃ 1 2.5 Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 1 0.1 100 200 300 400 500 600 700 800 900 1000 2.2 2.1 2 1.9 1.8 1.7 0 10 20 30 40 50 60 70 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 80 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 2.5 100 Ta=25℃ IF=100mA n=30pcs REVERSE CURRENT:IR(nA) 940 930 920 910 80 70 60 50 40 30 AVE:9.655nA 20 AVE:921.7m 900 2.3 2.2 2.1 2 1.9 1.8 1.7 10 1.6 0 1.5 VF DISPERSION MAP IR DISPERSION MAP 10 5 AVE:3.50A 8 7 PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 5 Ta=25℃ VR=6V IF=5mA RL=50Ω n=10pcs 9 REVERSE RECOVERY TIME:trr(ns) 1cyc Ifsm 15 6 5 4 3 2 1 0 Ifsm 4 8.3ms 8.3ms 1cyc 3 2 1 AVE:1.93ns 0 0 1 IFSM DISRESION MAP trr DISPERSION MAP t 10 1 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board 10 IM=1mA 1ms 1 0.001 100 IF=10mA time 300us 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 2/2 9 ELECTROSTATIC DDISCHARGE TEST ESD(KV) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 1000 100 AVE:1.981pF Ct DISPERSION MAP 10 20 Ta=25℃ VR=0V f=1MHz n=10pcs 2.4 Ta=25℃ VR=80V n=10pcs 90 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 950 AVE:1.981pF 1.5 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD VOLTAGE:VF(mV) 2.3 1.6 0.01 0 Ta=25℃ VR=0V f=1MHz n=10pcs 2.4 1000 0.1 PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75℃ REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) 100 8 7 6 5 4 3 2 1 0 1000 AVE:2.54kV AVE:0.97kV C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 2011.06 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A