Datasheet - Diodes Incorporated

SBR660CTLQ
6A SBR®
SUPER BARRIER RECTIFIER
Green
Product Summary
Features
VRRM (V)
IO (A)
VF max (V)
@+25°C
IR max (mA)
@+25°C
60
6
0.57
0.3

100% Avalanche Tested.

Patented SBR technology provides a superior avalanche
capability than schottky diodes ensuring more rugged and
reliable end applications
Reduced ultra-low forward voltage drop (VF); better efficiency
and cooler operation.


Reduced high temperature reverse leakage; Increased reliability
against thermal runaway failure in high temperature operation



Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This Super Barrier Rectifier (SBR) diode has been designed to meet
the stringent requirements of Automotive Applications. It is ideally
suited to use as :





Case: TO252 (DPAK)
Case Material: Molded Plastic, “Green” Molding compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Polarity: See Below
Weight: 0.33 grams (approximate)


DC – DC Converters
DC/AC Inverters
AC/DC Power Supplies


TO252
1
2
3
Top View
Package Configuration
Ordering Information (Note 4)
Part Number
SBR660CTLQ-13
Notes:
Compliance
Automotive
Case
TO252 (DPAK)
Packaging
2500 pieces/reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SBR
660CT
YYWW AB
SBR660CT = Product Type Marking Code
AB = Foundry and Assembly Code
YYWW = Date Code Marking
YY = Last two digits of year (ex: 13 = 2013)
WW = Week (01 - 53)
SBR is a registered trademark of Diodes Incorporated.
SBR660CTLQ
Document number: DS36093 Rev. 2 - 2
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October 2013
© Diodes Incorporated
SBR660CTLQ
Maximum Ratings (Per Leg) (@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Symbol
Value
Unit
VRRM
VRWM
VRM
60
V
IO
3
6
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
80
A
Repettitive Peak Avalanche Power (1μs, +25°C)
PARM
8550
W
EAS
116
mJ
Symbol
Value
Unit
RθJC
2
°C/W
TJ, TSTG
-65 to +150
°C
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current
(Per Leg)
(Total)
Non-Repetitive Avalanche Energy
(TJ = +25°C, IAS = 5A, L = 10mH)
Thermal Characteristics (Per Leg)
Characteristic
Typical Thermal Resistance (per leg) (Note 5)
Operating and Storage Temperature Range
Electrical Characteristics (Per Leg) (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Leakage Current (Note 6)
IR
-
5
0.3
-
Unit
mA
Forward Voltage Drop
VF
-
-
0.57
V
Test Condition
VR = 60V, TJ = +25°C
VR = 60V, TJ = +125°C
IF = 3A, TJ = +25°C
2
Notes:
5. Device mounted on Polymide substrate, 125mm Copper pad, double-sided, PC Board.
6. Short duration pulse test used to minimize self-heating effect.
IF, INSTANTANEOUS FORWARD CURRENT (A)
3.5
PD, POWER DISSIPATION (W)
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
4
5
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 1 Forward Power Dissipation
6
1
TA = 150°C
TA = 125°C
0.1
TA = 85°C
T A = 25°C
TA = -55°C
0.01
0.001
0.0001
0
100 200 300 400 500 600 700 800
VF, INSTANTANEOUS FORWARD VOLTAGE (mV)
Figure 2 Typical Forward Characteristics
SBR is a registered trademark of Diodes Incorporated.
SBR660CTLQ
Document number: DS36093 Rev. 2 - 2
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October 2013
© Diodes Incorporated
SBR660CTLQ
10,000
T A = 150°C
TA = 125°C
1,000
1,000
100
10
TA = 25°C
0.1
4
3
RJA = RJC
Per Element
RJA = 74°C/W
Per Element
1
25
100
75
50
25
0
6
12 18 24 30 36 42 48 54 60
VR, DC REVERSE VOLTAGE (V)
10000
PM, MAXIMUM AVALANCHE POWER (W)
Note 5
75
50
25
0
0
Figure 6 Operating Temperature Derating
100
0
1
10
100
VR, DC REVERSE VOLTAGE (V)
Figure 4 Total Capacitance vs. Reverse Voltage
125
50
75
100
125
150
175
TA, AMBIENT TEMPERATURE (°C)
Figure 5 Forward Current Derating Curve
125
0.1
150
RJA = RJC
Total Device
5
2
10
0
10
20
30
40
50
60
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3 Typical Reverse Characteristics
0
PARM, AVALANCHE PEAK PULSE POWER
DERATING PERCENTAGE (%)
100
1
6
IF(AV), AVERAGE FORWARD CURRENT (A)
CT, TOTAL CAPACITANCE (pF)
f = 1MHz
10,000
TA, DERATED AMBIENT TEMPERATURE (°C)
IR, INSTANTANEOUS REVERSE CURRENT (µA)
100,000
25
50
75 100 125 150 175 200
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 Pulse Derating Curve
1000
100
10
100
1000
10000
TP, PULSE DURATION (µS)
Figure 8 Maximum Avalanche Power
SBR is a registered trademark of Diodes Incorporated.
SBR660CTLQ
Document number: DS36093 Rev. 2 - 2
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October 2013
© Diodes Incorporated
SBR660CTLQ
P(PK), PEAK TRANSIENT POIWER (W)
1,000
900
Single Pulse
RJA = 58 C/W
RJA(t) = r(t) * RJA
TJ - TA = P * RJA(t)
800
700
600
500
400
300
200
100
0
0.00001 0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 9 Single Pulse Maximum Power Dissipation
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
0.01
D = 0.01
RJA(t) = r(t) * RJA
RJA = 58°C/W
Duty Cycle, D = t1/ t2
D = 0.005
Single Pulse
0.001
0.001
0.01
0.1
1
10
100
t1, PULSE DURATION TIMES (sec)
Figure 10 Transient Thermal Resistance
1,000
10,000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E
A
b3
c2
L3
D
A2
E1
H
L4
A1
L
e
2X b2
3X b
a
TO252
Dim Min Max Typ
A 2.19 2.39 2.29
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07
b
0.64 0.88 0.783
b2 0.76 1.14 0.95
b3 5.21 5.46 5.33
c2 0.45 0.58 0.531
D 6.00 6.20 6.10
D1 5.21


e
2.286


E 6.45 6.70 6.58
E1 4.32


H 9.40 10.41 9.91
L
1.40 1.78 1.59
L3 0.88 1.27 1.08
L4 0.64 1.02 0.83
a
0°
10°

All Dimensions in mm
SBR is a registered trademark of Diodes Incorporated.
SBR660CTLQ
Document number: DS36093 Rev. 2 - 2
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October 2013
© Diodes Incorporated
SBR660CTLQ
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X2
Dimensions
Z
X1
X2
Y1
Y2
C
E1
Y2
C
Z
Y1
X1
Value (in mm)
11.6
1.5
7.0
2.5
7.0
6.9
2.3
E1
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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Copyright © 2013, Diodes Incorporated
www.diodes.com
SBR is a registered trademark of Diodes Incorporated.
SBR660CTLQ
Document number: DS36093 Rev. 2 - 2
5 of 5
www.diodes.com
October 2013
© Diodes Incorporated