RENESAS RJK2006DPE-TL-E

RJK2006DPJ, RJK2006DPE, RJK2006DPF
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0512-0100
Rev.1.00
Jan.14.2005
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
LDPAK
D
4
G
4
4
1
2
3
1
2
1. Gate
2. Drain
3. Source
4. Drain
3
RJK2006DPE
2
3
RJK2006DPF
RJK2006DPJ
1
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Rev.1.00, Jan.14.2005, page 1 of 4
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IDR (pulse)Note1
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
200
±30
40
100
40
100
27
48.6
100
1.25
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Electrical Characteristics
(Ta = 25°C)
Item
Drain to Source breakdown voltage
Zero Gate voltage drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
RDS(on)
Min
200
—
—
3.0
15
—
Typ
—
—
—
—
26
0.052
Max
—
1
±0.1
4.5
—
0.059
Unit
V
µA
µA
V
S
Ω
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
—
—
—
—
—
—
—
—
—
—
1800
330
43
30
180
85
100
43
11
20
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
VDF
trr
—
—
1.0
150
1.5
—
V
ns
Body-Drain diode reverse recovery
charge
Notes: 4. Pulse test
Qrr
—
0.8
—
µC
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Rev.1.00, Jan.14.2005, page 2 of 4
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
Test conditions
ID = 10 mA, VGS = 0
VDS = 200 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 20 A, VDS = 10 V Note4
ID = 20 A, VGS = 10 VNote4
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 20 A
VGS = 10 V
RL = 5 Ω
Rg = 10 Ω
VDD = 160 V
VGS = 10 V
ID = 40 A
IF = 40 A, VGS = 0 Note4
IF = 40 A, VGS = 0
diF/dt = 100 A/µs
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Package Dimensions
• RJK2006DPJ
As of January, 2003
Unit: mm
8.6 ± 0.3
11.3 ± 0.5
0.3
10.0 +– 0.5
(1.4)
4.44 ± 0.2
10.2 ± 0.3
1.3 ± 0.15
1.3 ± 0.2
1.37 ± 0.2
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
2.49 ± 0.2
11.0 ± 0.5
0.2
0.86 +– 0.1
0.4 ± 0.1
Package Code
JEDEC
JEITA
Mass (reference value)
LDPAK (L)
—
—
1.40 g
• RJK2006DPE
As of January, 2003
Unit: mm
(1.5)
10.0
2.49 ± 0.2
0.2
0.1 +– 0.1
7.8
7.0
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
7.8
6.6
1.3 ± 0.15
1.7
(1.4)
4.44 ± 0.2
10.2 ± 0.3
2.2
1.37 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
3.0 +– 0.5
1.3 ± 0.2
Package Code
JEDEC
JEITA
Mass (reference value)
Rev.1.00, Jan.14.2005, page 3 of 4
LDPAK (S)-(1)
—
—
1.30 g
RJK2006DPJ, RJK2006DPE, RJK2006DPF
• RJK2006DPF
As of January, 2003
Unit: mm
2.49 ± 0.2
(2.3)
10.0
7.8
7.0
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
7.8
6.6
1.3 ± 0.15
1.7
(1.4)
4.44 ± 0.2
10.2 ± 0.3
0.2
0.1 +– 0.1
2.2
1.37 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
5.0 +– 0.5
1.3 ± 0.2
Package Code
JEDEC
JEITA
Mass (reference value)
LDPAK (S)-(2)
—
—
1.35 g
Ordering Information
Part Name
RJK2006DPE-TL-E
Quantity
1000 pcs
Shipping Container
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.1.00, Jan.14.2005, page 4 of 4
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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