DMTH6009LK3Q ADVANCED IN FORMAT IO NADVANCED IN

DMTH6009LK3Q
Green
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary

RDS(ON) Max
ID Max
TC = +25°C
10mΩ @ VGS = 10V
59A


12.8mΩ @ VGS = 4.5V
52A


BVDSS
INFORMATION
ADVANCED
INFORMATION
ADVANCED
Features
60V
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:




Rated to +175°C – ideal for high ambient temperature
environments
Low RDS(ON) – Ensures On State Losses Are Minimized
Excellent Qgd x RDS(ON) Product (FOM)
Advanced Technology for DC/DC Converters
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data

Power Management Functions

Case: TO252

DC-DC Converters

Case Material: Molded Plastic, “Green” Molding Compound.

Backlighting

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)

Top View
Pin Out Top View
Equivalent Circuit
Ordering Information (Note 5)
Part Number
DMTH6009LK3Q-13
Notes:
Case
TO252
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
H6009L
YYWW
DMTH6009LK3Q
Document number: DS38014 Rev. 1 - 2
=Manufacturer’s Marking
H6009L = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 15 = 2015)
WW = Week Code (01 to 53)
1 of 6
www.diodes.com
September 2015
© Diodes Incorporated
DMTH6009LK3Q
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
INFORMATION
ADVANCED
INFORMATION
ADVANCED
Continuous Drain Current (Note 6) VGS = 10V
Continuous Drain Current (Note 7) VGS = 10V
TA = +25°C
TA = +70°C
TC = +25°C
TC = +70°C
Value
60
±20
14.2
11.9
ID
A
59
49
80
90
20.3
20.6
ID
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.1mH
Avalanche Energy, L=0.1mH
Unit
V
V
IS
IDM
IAS
EAS
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Symbol
PD
RJA
PD
RJC
TJ, TSTG
Value
3.2
47
60
2.5
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
60
-
-
1
±100
V
μA
nA
VGS = 0V, ID = 1mA
VDS = 48V, VGS = 0V
VGS = ±16V, VDS = 0V
VGS(TH)
Static Drain-Source On-Resistance
RDS(ON)
VSD
0.7
-
1.4
8.3
9.6
0.9
2
10
12.8
1.2
V
mΩ
mΩ
V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 13.5A
VGS = 4.5V, ID = 11.5A
VGS = 0V, IS = 20A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
-
1,925
438
41
1.7
15.6
33.5
4.7
5.3
4.5
8.6
35.9
15.7
18.2
33.1
-
pF
VDS = 30V, VGS = 0V,
f = 1MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
nC
VDS = 30V, ID = 13.5A
ns
VDD = 30V, VGS = 10V,
RG = 6Ω, ID = 13.5A
ns
nC
IF = 13.5A, di/dt = 400A/μs
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Test Condition
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
7. Device mounted on infinite heat sink and measured by thermal couple attached on bottom heat sink of package.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMTH6009LK3Q
Document number: DS38014 Rev. 1 - 2
2 of 6
www.diodes.com
September 2015
© Diodes Incorporated
DMTH6009LK3Q
30.0
30
VGS=3.0V
VGS=4.0V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VDS=5V
25
VGS=3.5V
VGS=4.5V
VGS=10.0V
20.0
15.0
10.0
VGS=2.5V
5.0
20
15
125℃
10
85℃
150℃
175℃
5
25℃
-55℃
0.0
0
0
0.5
1
1.5
2
2.5
3
1
0.01
2
2.5
3
3.5
4
0.1
VGS=4.5V
0.0095
0.009
0.0085
0.008
0.0075
VGS=10V
0.007
0.0065
0.006
2
6
10
14
18
22
26
30
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
1.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
0.08
0.06
ID=13.5A
0.04
0.02
0
0
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
4
8
12
16
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
20
1.8
0.014
150℃
VGS= 10V
0.013
175℃
0.012
125℃
0.011
85℃
0.01
0.009
25℃
0.008
0.007
-55℃
0.006
0.005
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
INFORMATION
ADVANCED
INFORMATION
ADVANCED
25.0
1.6
VGS=4.5V, ID=11.5A
1.4
1.2
VGS=10V, ID=13.5A
1
0.8
0.6
0.004
0
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
DMTH6009LK3Q
Document number: DS38014 Rev. 1 - 2
3 of 6
www.diodes.com
-50
-25
0
25
50
75
100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
September 2015
© Diodes Incorporated
DMTH6009LK3Q
2
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.016
VGS=4.5V, ID=11.5A
0.012
0.008
VGS=10V, ID=13.5A
0.004
0
1.6
ID=1mA
1.2
ID=250μA
0.8
0.4
-50
-25
0
25
50
75
100 125 150 175
-50
-25
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
30
10000
CT, JUNCTION CAPACITANCE (pF)
f=1MHz
IS, SOURCE CURRENT (A)
25
VGS=0V, TJ=125℃
20
VGS=0V, TJ=150℃
15
VGS=0V, TJ=175℃
VGS=0V, TJ=85℃
10
VGS=0V, TJ=25℃
5
Ciss
1000
Coss
100
Crss
VGS=0V, TJ=-55℃
10
0
0
0.3
0.6
0.9
1.2
0
1.5
5
10
15
20
25
30
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1000
10
RDS(ON) Limited
PW =100μs
ID, DRAIN CURRENT (A)
8
6
VGS (V)
INFORMATION
ADVANCED
INFORMATION
ADVANCED
0.02
VDS=30V, ID=13.5A
4
100
PW =1ms
10
0.1
2
0
0
7
14
21
28
35
Qg (nC)
Figure 11. Gate Charge
DMTH6009LK3Q
Document number: DS38014 Rev. 1 - 2
4 of 6
www.diodes.com
PW =10ms
1
PW =100ms
TJ(MAX)=175℃
TA=25℃
Single Pulse
DUT on 1*MRP board
VGS=10V
0.01
0.01
PW =1s
PW =10s
DC
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
September 2015
© Diodes Incorporated
DMTH6009LK3Q
INFORMATION
ADVANCED
INFORMATION
ADVANCED
r(t), TRANSIENT THERMAL RESISTANCE
1
D=0.5
D=0.9
D=0.3
D=0.7
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
RθJC(t)=r(t) * RθJC
RθJC=2.5℃/W
Duty Cycle, D=t1 / t2
D=Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
E
A
b3
7°±1°
c
L3
D
A2
L4
e
H
b(3x)
b2(2x)
Gauge Plane
E1
0.508
D1
Seating Plane
a
L
A1
2.74REF
DMTH6009LK3Q
Document number: DS38014 Rev. 1 - 2
5 of 6
www.diodes.com
TO252 (DPAK)
Dim Min Max Typ
A 2.19 2.39 2.29
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07
b 0.64 0.88 0.783
b2 0.76 1.14 0.95
b3 5.21 5.46 5.33
c
0.45 0.58 0.531
D 6.00 6.20 6.10
D1 5.21
e
2.286
E 6.45 6.70 6.58
E1 4.32
H 9.40 10.41 9.91
L 1.40 1.78 1.59
L3 0.88 1.27 1.08
L4 0.64 1.02 0.83
a
0°
10°
All Dimensions in mm
September 2015
© Diodes Incorporated
DMTH6009LK3Q
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
INFORMATION
ADVANCED
INFORMATION
ADVANCED
X1
Y1
Dimensions
C
X
X1
Y
Y1
Y2
Y2
C
Value (in mm)
4.572
1.060
5.632
2.600
5.700
10.700
Y
X
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
DMTH6009LK3Q
Document number: DS38014 Rev. 1 - 2
6 of 6
www.diodes.com
September 2015
© Diodes Incorporated