ROHM 1SR156

Data Sheet
Rectifier diode
1SR156-400
Applications
For fast rectifier
Dimensions (Unit : mm)
Land size figure (Unit : mm)
2.0
4
①
②
0.1±0.02
0.1
4.2
5.0±0.3
2
4.5±0.2
Features
1) Small power mold type. (PMDS)
2) High reliability.
3) High switching speed.
1.2±0.3
2.0
2.6±0.2
PMDS
2.0±0.2
1.5±0.2
Construction
Silicon diffused junction
Structure
ROHM : PMDS
JEDEC : SOD-106
①
②
Manufacture Date
Taping dimensions (Unit : mm)
2.0±0.05
0.3
φ1.55±0.05
12±0.2
5.5±0.05
5.3±0.1
0.05
9.5±0.1
1.75±0.1
4.0±0.1
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
VRMS
Reverse voltage (repetitive peak)
VR
Reverse voltage (DC)
Average rectified forward current (*1)
Io
IFSM
Forward current surge peak (60Hz・1cyc)
Junction temperature
Tj
Storage temperature
Tstg
(*1) Mounted on alumina board
Electrical characteristics (Ta=25C)
Parameter
Symbol
VF
Forward voltage
Limits
Unit
V
V
A
A
C
C
500
400
1
20
150
55 to +150
Min.
Typ.
Max.
Unit
Conditions
-
-
1.3
V
IF=0.8A
Reverse current
IR
-
-
10
uA
Reverse recovery time
trr
-
-
0.4
us
VR=400V
IF=10mA, IR=10mA, Irr=1mA
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1/3
2011.06 - Rev.A
1000
Ta=150℃
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1000000
Ta=75℃
Ta=125℃
100000
Ta=25℃
Ta=25℃
10
10000
Ta=75℃
1000
Ta=25℃
100
1
0
200
400
600
800
1000
Ta=25℃
10
1
1200
0
100
200
300
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
1040
REVERSE CURRENT : IR(nA)
FORWARD VOLTAGE : V F(mV)
Ta=25℃
IF=0.8A
n=30pcs
1030
1020
AVE:1020.5mV
1010
800
700
600
500
400
300
AVE:97.5nA
200
100
1000
0
VF DISPERSION MAP
1
0.1
5
1cyc
8.3ms
AVE:34.0A
50
220
210
200
190
AVE:200.7ns
180
170
160
0
35
30
AVE:38.3pF
25
20
15
10
5
0
Ifsm
40
8.3ms
60
40
20
0
IM=1mA
IF=0.5A
20
10
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1ms
100
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100
2.5
Rth(j-a)
100
tim
300us
Rth(j-c)
10
D=1/2
DC
2
Sin(θ=180)
1.5
1
1
0.5
0.1
1
8.3ms
1cyc
30
3
Mounted on epoxy board
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
1000
t
30
Ta=25℃
f=1MHz
VR=0V
n=10pcs
40
trr DISPERSION MAP
Ifsm
25
45
1
80
20
0
IFSM DISRESION MAP
100
15
50
Ta=25℃
IF=10mA
IR=10mA
Irr=0.10*IR
n=10pcs
230
PEAK SURGE
FORWARD CURRENT : I FSM(A)
REVERSE RECOVERY TIME:trr(ns)
Ifsm
10
Ct DISPERSION MAP
240
100
0
IR DISPERSION MAP
150
PEAK SURGE
FORWARD CURRENT : I FSM(A)
10
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
Ta=25℃
VR=400V
n=30pcs
900
f=1MHz
400
1000
1050
100
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=125℃
Ta=150℃
100
REVERSE CURRENT : IR(nA)
FORWARD CURRENT : I F(mA)
Data Sheet
1SR156-400
0.001
0
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
2/3
100
1000
0
1
2
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
2011.06 - Rev.A
0.1
Sin(θ=180)
0.06
D=1/2
0.04
DC
0.02
3
2.5
0A
Io
0V
VR
t
2
T
D=t/T
VR=200V
Tj=150℃
DC
1.5
D=1/2
1
0.5
0
0
100
200
300
400
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
0V
2.5
VR
t
2
T
DC
D=t/T
VR=200V
Tj=150℃
1.5
D=1/2
1
Sin(θ=180)
0.5
Sin(θ=180)
0
Io
0A
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
3
0.08
REVERSE POWER
DISSIPATION:PR (W)
Data Sheet
1SR156-400
0
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve゙(Io-Ta)
150
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc(℃)
Derating Curve゙(Io-Tc)
30
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
No break at 30kV
25
20
15
10
AVE:14.6kV
5
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.06 - Rev.A
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Notes
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R1120A