Data Sheet Schottky barrier Diode RSX501L-20 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 ① ② 0.1±0.02 0.1 4.2 1.2±0.3 7 5.0±0.3 3) High reliability. 5 4.5±0.2 Features 1) Small power mold type. (PMDS) 2) Low VF, Low IR. 2.0 2.6±0.2 PMDS 2.0±0.2 1.5±0.2 Construction Silicon epitaxial planar Structure ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date Taping specifications (Unit : mm) 2.0±0.05 0.3 φ1.55±0.05 12±0.2 5.5±0.05 5.3±0.1 0.05 9.5±0.1 1.75±0.1 4.0±0.1 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz・1cyc)(*1) Junction temperature Tj Storage temperature Tstg Limits 25 20 5 70 125 40 to 125 Unit V V A A °C °C (*1)Tc=90°C max Mounted on epoxy board. 180°Half sine wave Electrical characteristics (Ta=25°C) Parameter Symbol VF Min. Typ. Max. Unit Forward voltage - - 0.39 V IF=3.0A Reverse current IR - - 500 μA VR=20V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 Conditions 2011.05 - Rev.D Data Sheet RSX501L-20 10 Ta=25℃ Ta=-25℃ 0.01 10000 Ta=75℃ 1000 Ta=25℃ 100 Ta=-25℃ 10 0.001 100 200 300 400 500 600 10 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 5 10 15 20 25 30 0 REVERSE CURRENT:IR(uA) 900 360 350 AVE:350.0mV 340 800 700 600 500 400 300 200 1030 1020 1010 1000 AVE:196.8uA 0 VF DISPERSION MAP Ct DISPERSION MAP 300 AVE:186.0A 100 50 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 5 AVE:11.6ns PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms REVERSE RECOVERY TIME:trr(ns) 1cyc Ifsm 150 AVE:997.4pF 970 950 30 200 980 IR DISPERSION MAP 300 250 990 960 100 330 0 0 Ifsm 250 8.3ms 8.3ms 1cyc 200 150 100 50 0 1 trr DISPERSION MAP IFSM DISRESION MAP 300 30 Ta=25℃ f=1MHz VR=0V n=10pcs 1040 Ta=25℃ VR=20V n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=3A n=30pcs 25 1050 1000 370 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 380 FORWARD VOLTAGE:VF(mV) 100 1 0 PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHz 100000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=125℃ 1 0.1 1000 1000000 Ta=125℃ Ta=75℃ 1000 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 5 Mounted on epoxy board Ifsm TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) t 200 150 100 50 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Rth(j-a) 4 100 100 D=1/2 Rth(j-c) 10 IM=100mA 1 1ms IF=1A time FORWARD POWER DISSIPATION:Pf(W) PEAK SURGE FORWARD CURRENT:IFSM(A) 250 DC 3 Sin(θ＝180) 2 1 300us 0.1 0.001 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 2/3 100 1000 0 0 2 4 6 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 8 10 2011.05 - Rev.D Data Sheet RSX501L-20 DC D=1/2 2 1 0A 0V t 10 T DC VR D=t/T VR=10V Tj=125℃ Sin(θ＝180) 5 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0A 0V Io t DC 10 T VR D=t/T VR=10V Tj=125℃ D=1/2 5 Sin(θ＝180) D=1/2 Sin(θ＝180) 0 Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 4 REVERSE POWER DISSIPATION:PR (W) 15 15 5 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) 125 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) No break at 30kV No break at 30kV 25 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A