Fast Recovery Diode RF101L4S Applications General rectification Land size figure (Unit : mm) Dimensions (Unit : mm) 2.0 ① ② 0.1±0.02 0.1 4.2 5.0±0.3 8 6 1.2 ±0.3 8 6 4.5±0.2 3)Ultra high switching speed 4)Low switching loss 2.0 2.6±0.2 Features 1)Small power mold type. (PMDS) 2)Ultra low VF PMDS 2.0±0.2 1.5±0.2 Construction Silicon epitaxial planar Structure ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture date Taping dimensions (Unit : mm) 2.0±0.05 0.3 φ1.55±0.05 12±0.2 5.5±0.05 5.3±0.1 0.05 9.5±0.1 1.75±0.1 4.0±0.1 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current (*1) VRM VR Forward current surge peak (60Hz・1cyc) Io IFSM Junction temperature Storage temperature Tj Tstg Limits Unit 400 400 1 25 150 55 to 150 V V A A °C °C (*1)Mounted on epoxy board. 180°Half sine wave Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Reverse recovery time www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. Symbol VF Min. Typ. Max. - - 1.25 V IF=1.0A IR - - 10 μA trr - - 25 ns VR=400V IF=0.5A,IR=1A,Irr=0.25*IR 1/3 Unit Conditions 2011.06 - Rev.B Data Sheet RF101L4S Electrical characteristics curves 1 10000 100 f=1MHz Ta=125℃ Ta=75℃ 0.1 Ta=150℃ Ta=25℃ Ta=-25℃ 0.01 0.001 0 200 400 600 800 1000 Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 1 1 0 1300 50 1000 AVE:1007mV 900 400 350 300 250 200 150 AVE:24.8nA 100 AVE:41.8pF 40 30 20 0 Ct DISPERSION MAP 150 8.3ms 100 AVE:48.0A 50 1000 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc AVE:18.4ns 10 5 0 0 Ifsm 8.3ms 8.3ms 1cyc 100 10 1 1 trr DISPERSION MAP IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t 100 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. IM=10mA IF=100mA 100 3 DC 1m 100 time 2.5 Rth(j-a) D=1/2 300u Rth(j-c) 10 1 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS Mounted on epoxy board 1000 Ta=25℃ f=1MHz VR=0V n=10pcs 50 10 30 Ifsm 30 60 IR DISPERSION MAP REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 70 0 VF DISPERSION MAP 200 25 80 50 800 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 90 Ta=25℃ VR=400V n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1100 5 100 450 REVERSE CURRENT:IR(nA) 1200 0 100 150 200 250 300 350 400 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 500 Ta=25℃ IF=1A n=30pcs 10 0.1 1200 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD VOLTAGE:VF(mV) Ta=125℃ 1000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) Ta=150℃ 2 Sin(θ＝180) 1.5 1 0.5 0.1 0.001 0 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 2/3 1000 0 0.5 1 1.5 2 2011.06 - Rev.B Data Sheet RF101L4S 2 t T VR D=t/T VR=200V Tj=150℃ DC 1 Sin(θ＝180) 0A 0V Io t 2 T VR D=t/T VR=200V Tj=150℃ 1 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 25 AVE：16.3kV 20 15 10 AVE：4.60kV 5 0 0 ELECTROSTATIC DISCHARGE TEST ESD(KV) D=1/2 Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 30 3 0A 0V 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 150 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.06 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 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