2SD2195 / 2SD1980 / 2SD1867 Transistors Power Transistor (100V, 2A) 2SD2195 / 2SD1980 / 2SD1867 zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1580 / 2SB1316. zExternal dimensions (Unit : mm) 2SD2195 0.5 4.5 1.6 2.5 4.0 1.5 (1) (3) 1.0 zEquivalent circuit (2) 0.5 0.4 1.5 C 0.4 0.4 (1) Base (2) Collector (3) Emitter 1.5 ROHM : MPT3 EIAJ : SC-62 3.0 B 2SD1980 6.5 5.1 R2 2.3 E IC Collector current 2SD2195 Collector power dissipation 2SD1980 2SD1867 Junction temperature Storage temperature PC Tj Tstg 0.75 Unit V V V A(DC) A(Pulse) 0.65 0.9 0.8Min. Limits 100 100 6 2 3 ∗1 0.5 2 ∗2 1 10 1 ∗3 150 −55 to +150 2.3 (1) (2) (3) 2.3 0.5 1.0 (1) Base (2) Collector (3) Emitter ROHM : CPT3 EIAJ : SC-63 W W(Tc=25°C) 2SD1867 2.5 6.8 W °C °C 1.0 0.9 ∗1 Single pulse Pw=100ms ∗2 When mounted on a 40 x 40 x 0.7 mm ceramic board. ∗3 Printed circuit board, 1.7mm thick, collector plating 100mm2 or larger. 4.4 Symbol VCBO VCEO VEBO 2.5 0.9 zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage 1.5 5.5 R2 300Ω 0.5 B : Base C : Collector E : Emitter 1.5 R1 3.5kΩ 9.5 R1 14.5 0.65Max. 0.5 (1) (2) (3) 2.54 2.54 1.05 0.45 Taping specifications ROHM : ATV (1) Emitter (2) Collector (3) Base Rev.B 1/3 2SD2195 / 2SD1980 / 2SD1867 Transistors zPackaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) 2SD2195 MPT3 1k to 10k DP T100 1000 2SD1980 CPT3 1k to 10k − TL 2500 2SD1867 ATV 1k to 10k − TV2 2500 ∗ Denotes hFE zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltag Base-Emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCBO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob Min. 100 100 6 − − − − 1000 − − Typ. − − − − − − − − 80 25 Max. − − − 10 3 1.5 2.0 10000 − − Unit V V V µA mA V V − MHz pF Conditions IC = 50µA IC = 5mA IE = 5mA VCB = 100V VEB = 5V IC = 1A , IB = 1mA ∗ IC/IB = 1A/1mA VCE = 2V , IC = 1A ∗ VCE = 5V , IE = −0.1A , f = 30MHz VCB = 10V , IE = 0A , f = 1MHz ∗ Measured using pulse current. zElectrical characteristic curves 10 A 0.9m A 0.8m A m 0.7 A 0.6m A 0.5m A IB=0.3m 0.4 0.5 0.2 0.1 0.05 VCE=4V 2V 2000 1000 500 200 100 50 0.02 0 1 2 3 5 4 0.2 2000 Ta =1 −2 25 5° °C C 100 00 °C 1000 200 50 20 10 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 1.4 1.8 2.2 2.6 20 10 0.001 3.0 BASE TO EMITTER VOLTAGE : VBE (V) 10 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=2V 5000 500 1.0 0.01 1 0.1 10 COLLECTOR CURRENT : IC (A) Fig.2 Grounded emitter propagation Fig.3 DC current gain vs. collector current characteristics Fig.1 Grounded emitter output characteristics 10000 0.6 100 Ta=25°C 50 20 10 5 IC/IB=1000 2 500 1 0.5 0.2 0.1 0.0.1 0.0.2 0.0.5 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : IC (A) 5 10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 0 0.01 COLLECTOR TO EMITTER VOLTAGE : VCE (V) DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 0.8 1 25°C −25°C A 0.4m 2 °C 1.2 Ta=25°C 5000 100 1.6 10000 VCE=2V 5 Ta= A 1m Ta=25°C COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 2.0 100 IC/IB=1000 50 20 10 5 Ta=−25°C 2 1 25°C 100°C 0.5 0.2 0.1 0.0.1 0.0.2 0.0.5 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage vs.collector current vs.collector current Rev.B 2/3 2SD2195 / 2SD1980 / 2SD1867 Transistors 10 5 COLLECTOR CURRENT : IC (A) 50m 1 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance vs. collector-base voltage s 100m 0.2 0.1 20m 10m 0.05 5m Ta=25°C ∗ Single Nonrepetitive Pulse When mounted on a 14 8 0.8mm 2 0.5 m s∗ DC s 0m 10 5 200m IC Max 0 =1 Pw 10 0m IC Max Pulse DC 20 10 500m 1 = Pw 50 Pw = 1 2 ∗ 1ms s∗ 0m =1 Pw 100 2 Pw= 200 3 Ta=25°C ∗ Single Nonrepetitive Pulse IC Max Pulse∗ IC (A) Ta=25°C f=1MHz IE=0A 500 2m glass epoxy board. 1m 0.1 0.2 0.5 1 2 + + COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 5 10 20 50 100 200 500 1000 COLLECTOR TO EMITTER VOLTTER VOLTAGE :VCE (V) Fig.8 Safe operating area (2SD2195) 1 2 5 10 20 50 100 VCE (V) Fig.9 Safe operating area(2SD1867) Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1