DTC144TM / DTC144TE / DTC144TUA DTC144TKA / DTC144TSA Transistors Digital transistors (built-in resistor) DTC144TM / DTC144TE / DTC144TUA / DTC144TKA / DTC144TSA zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy. zEquivalent circuit C B R1 E B : Base C : Collector E : Emitter zStructure NPN digital transistor (Built-in resistor type) zExternal dimensions (Unit : mm) DTC144TM DTC144TE (1) (2) ROHM : VMT3 0.15Max. (3) ROHM : EMT3 DTC144TKA (1) Emitter (2) Base (3) Collector Abbreviated symbol : 06 (15Min.) +0.1 0.4−0.05 ROHM : SMT3 EIAJ : SC-59 +0.1 0.15−0.06 All terminals have same dimensions Abbreviated symbol : 06 (1) Emitter (2) Base (3) Collector 2±0.2 3Min. 3±0.2 4±0.2 5 0 to 0.1 0.3Min. 0.1Min. 0.15±0.05 All terminals have same dimensions DTC144TSA ROHM : SPT EIAJ : SC-72 0 to 0.1 (3) 0.3+0.1 −0 ROHM : UMT3 EIAJ : SC-70 0.8±0.1 (2) +0.2 1.6−0.1 2.1±0.1 (1) (3) (1) Emitter (2) Base (3) Collector 0.2 1.1+ −0.1 0.95 0.95 0.7±0.1 (2) 1.25±0.1 (1) 2.9±0.2 1.9±0.2 0.9±0.1 0.2 0.15±0.05 Abbreviated symbol : 06 2.0±0.2 1.3±0.1 0.65 0.65 0 to 0.1 0.3 +0.1 −0.05 Abbreviated symbol : 06 DTC144TUA 0.55±0.1 2.8±0.2 0.13 0~0.1 0.5 0.22 (1) (1) Base (2) Emitter (3) Collector 0.7±0.1 0.2+0.1 −0.05 0.1Min. 0.5 0.5 0.8±0.1 (3) 0.8 (2) +0.1 0.2 −0.05 1.6±0.2 0.2 0.4 0.4 1.2 0.32 1.6±0.2 1.0±0.1 1.2 0.8 0.2 0.15 0.45+ −0.05 0.4 2.5 + −0.1 (1) (2) (3) 0.5 0.15 0.45 + −0.05 (1) Emitter (2) Collector (3) Base 1/3 DTC144TM / DTC144TE / DTC144TUA DTC144TKA / DTC144TSA Transistors zAbsolute maximum ratings (Ta=25°C) Parameter Limits(DTC144T ) Symbol M E UA KA Collector-base voltage VCBO 50 Collector-emitter voltage VCEO 50 Emitter-base voltage VEBO 5 Collector current IC Collector power dissipation Pc SA V V mA 100 150 Unit 200 300 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C zElectrical characteristics (Ta=25°C) Typ. Max. Unit BVCBO 50 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA BVEBO 5 − − V IE=50µA Collector cutoff current ICBO − − 0.5 µA VCB=50V Emitter cutoff current IEBO − − 0.5 µA VEB=4V VCE(sat) − − 0.3 V IC/IB=5mA/0.5mA VCE=5V, IC=1mA Symbol Min. Parameter Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Conditions DC current transfer ratio hFE 100 250 600 − Input resistance R1 32.9 47 61.1 kΩ − fT − 250 − MHz VCE=10V, IE= −5mA, f=100MHz ∗ Transition frequency ∗Transition frequency of the device zPackaging specifications Type Package VMT3 EMT3 UMT3 SMT3 SPT Packaging type Taping Taping Taping Taping Taping Code T2L TL T106 T146 TP Basic ordering unit (pieces) 8000 3000 3000 3000 5000 − − − − − − − − − DTC144TM DTC144TE − DTC144TUA − − DTC144TKA − − − DTC144TSA − − − − − 2/3 DTC144TM / DTC144TE / DTC144TUA DTC144TKA / DTC144TSA Transistors 1k VCE=5V DC CURRENT GAIN : hFE 500 200 100 Ta=100°C 25°C −40°C 50 20 10 5 2 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) zElectrical characteristic curves 1 lC/lB=10 500m 200m 100m 50m Ta=100°C 25°C −40°C 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage vs. collector current 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0