ROHM R5021ANX

R5021ANX
Transistors
10V Drive Nch MOSFET
R5021ANX
zDimensions (Unit : mm)
zStructure
Silicon N-channel MOSFET
TO-220FM
10.0
φ3.2
4.5
8.0
1.2
1.3
14.0
2.5
15.0
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS)
guaranteed to be r30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
12.0
2.8
0.8
(1)Base
2.54
(2)Collector
2.54
0.75
2.6
(1) (2) (3)
(3)Emitter
zApplications
Switching
zPackaging specifications
zInner circuit
Package
Type
Bulk
−
Code
Basic ordering unit (pieces)
500
∗1
R5021ANX
zAbsolute maximum ratings (Ta=25qC)
Symbol
Limits
Unit
Drain-source voltage
VDSS
500
V
Gate-source voltage
VGSS
±30
V
∗3
±21
A
∗1
±84
A
21
A
∗1
Parameter
Drain current
Source current
(Body Diode)
Continuous
ID
Pulsed
IDP
Continuous
IS
Pulsed
ISP
∗3
84
A
Avalanche Current
IAS
∗2
10.5
A
Avalanche Energy
EAS
∗2
29.6
mJ
Total power dissipation (Tc=25°C)
PD
50
W
Channel temperature
Tch
150
°C
Tstg
−55 to +150
°C
Range of storage temperature
(1)
(1) Gate
(2) Drain
(3) Source
(2)
(3)
∗1 Body Diode
∗1 Pw≤10μs, Duty cycle≤1%
∗2 L 500μH, VDD=50V, RG=25Ω, Starting, Tch=25°C
∗3 Limited only by maximum temperature allowed
1/5
R5021ANX
Transistors
zThermal resistance
Parameter
Channel to case
Symbol
Limits
Unit
Rth(ch-c)
2.5
°C/W
zElectrical characteristics (Ta=25qC)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Symbol
Min.
Typ.
Max.
Unit
IGSS
−
−
±100
nA
VGS=±30V, VDS=0V
V(BR)DSS
500
−
−
V
ID=1mA, VGS=0V
IDSS
−
−
100
μA
VDS=500V, VGS=0V
Conditions
Gate threshold voltage
VGS(th)
2.5
−
4.5
V
VDS=10V, ID=1mA
Static drain-source on-state resistance
RDS(on) ∗
−
0.16
0.21
Ω
ID=10.5A, VGS=10V
Forward transfer admittance
| Yfs |
7
∗
−
−
S
ID=10.5A, VDS=10V
Input capacitance
Ciss
−
2300
−
pF
VDS=25V
Output capacitance
Coss
−
1000
−
pF
VGS=0V
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
tr
Rise time
Turn-off delay time
td(off)
tf
Fall time
Qg
Total gate charge
Gate-source charge
Qgs
Gate-drain charge
Qgd
−
70
−
pF
f=1MHz
∗
−
47
−
ns
ID=10.5A, VDD 250V
∗
−
70
−
ns
VGS=10V
∗
−
200
−
ns
RL=23.8Ω
∗
−
70
−
ns
RG=10Ω
∗
−
64
−
nC
∗
−
11
−
nC
∗
−
27
−
nC
VDD 250V
ID=21A
VGS=10V
RL=11.9Ω / RG=10Ω
∗ Pulsed
zBody diode characteristics (Source-drain) (Ta=25qC)
Parameter
Forward voltage
Symbol
VSD ∗
Min.
−
Typ.
−
Max.
1.5
Unit
V
Conditions
IS= 21A, VGS=0V
∗ Pulsed
2/5
R5021ANX
Transistors
zElectrical characteristic curves
40
PW = 100us
7.0V
8.0V
PW = 1ms
DRAIN CURRENT: ID (A)
PW = 10ms
1
DC operation
0.1
30
6.0V
20
5.5V
10
10
100
1000
10
5.5V
5
30
40
50
5.0V
0
0.1
0.01
3.0
4.5
6.0
5
4
3
2
1
0
-50
GATE-SOURCE VOLTAGE : VGS (V)
0
50
100
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R DS(on) (ȍ)
0.4
0.3
ID = 21.0A
ID = 10.5A
0.1
0
5
10
GATE-SOURCE VOLTAGE : VGS (V)
1
15
5
0.1
0.01
0.1
150
1
10
100
DRAIN CURRENT : ID (A)
Fig.5 Gate Threshold Voltage
Fig.6 Static Drain-Source On-State
䇭䇭䇭䇭vs. Channel Temperature
䇭䇭䇭䇭 Resistance vs. Drain Current
100
0.6
0.5
4
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
VGS= 10V
Pulsed
CHANNEL TEMPERATURE: Tc h (°C)
Ta=25°C
Pulsed
3
10
VDS= 10V
ID = 1mA
Fig.4 Typical Transfer Characteristics
0.6
2
Fig.3: Typical Output Characteristics( 㸈)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) (ȍ)
GATE THRESHOLD VOLTAGE: VGS(th) (V)
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
1.5
1
DRAIN-SOURCE VOLTAGE: VDS (V)
Fig.2: Typical Output Characteristics( 㸇)
10
DRAIN CURRENT : ID (A)
20
6
0
10
DRAIN-SOURCE VOLTAGE: VDS (V)
VDS= 10V
Pulsed
0.2
6.0V
0
0
100
0.001
0.0
7.0V
6.5V
VGS= 4.5V
0
1
Fig.1 Maximum Safe Operating Aera
1
10V
8.0V
15
VGS= 4.5V
DRAIN-SOURCE VOLTAGE : VDS ( V )
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R DS(on) (ȍ)
Ta= 25°C
Pulsed
5.0V
Ta = 25°C
Single Pulse
0.01
0.1
Ta= 25°C
Pulsed
6.5V
FORWARD TRANSFER ADMITTANCE :
|Yfs| (S)
DRAIN CURRENT : ID (A)
10
20
10V
Operation in this
area is limited by
R DS(ON)
DRAIN CURRENT: ID (A)
100
VGS= 10V
Pulsed
0.5
0.4
0.3
ID = 21.0A
0.2
ID = 10.5A
0.1
0
-50
0
50
100
CHANNEL TEMPERATURE: Tch (°C)
150
VDS= 10V
Pulsed
10
1
Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C
0.1
0.01
0.01
0.1
1
10
100
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source On-State
Fig.8 Static Drain-Source On-State
Fig.9 Forward Transfer Admittance
䇭䇭䇭㩷Resistance vs. Gate Source Voltage
䇭䇭䇭䇭Resistance vs. Channel Temperature
䇭䇭䇭䇭 vs. Drain Current
3/5
R5021ANX
Transistors
10000
15
10
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.1
1000
Cos s
100
C rs s
Ta= 25°C
f= 1MHz
VGS= 0V
10
1
0.01
0
0.5
1
0.1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
1
10
100
1000
Ta= 25°C
VDD = 250V
ID = 21A
R G= 10ȍ
Pulsed
10
5
0
0
10
20
30
40
50
60
70
80
TOTAL GATE CHARGE : Qg (nC)
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
Fig.10 Reverse Drain Current vs.
䇭䇭䇭䇭㩷Sourse-Drain Voltage
Fig.12 Dynamic Input Characteristics
10000
1000
REVERSE RECOVERY TIME: trr (ns)
GATE-SOURCE VOLTAGE : VGS (V)
C is s
VGS= 0V
Pulsed
CAPACITANCE : C (pF)
REVERSE DRAIN CURRENT : IDR (A)
100
Ta= 25°C
VDD = 250V
VGS= 10V
R G= 10ȍ
Pulsed
SWITCHING TIME : t (ns)
tf
100
Ta= 25°C
di / dt= 100A / μs
VGS= 0V
Pulsed
1000
td(off)
100
10
td(on)
tr
1
10
0.1
1
10
0.1
100
1
REVERSE DRAIN CURRENT : IDR (A)
10
100
DRAIN CURRENT : ID (A)
Fig.13 Reverse Recovery Time
vs.Reverse Drain Current
Fig.14 Switching 䇭Characteristics
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
10
1
Ta = 25°C
Single Pulse : 1Unit
Rth䋨ch-a䋩䋨t䋩 = 䌲䋨t䋩×Rth䋨ch-a䋩
Rth䋨ch-a䋩 = 45.9°C/W
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
4/5
90
R5021ANX
Transistors
zSwitching characteristics measurement circuit
Fig.1-1 Switching Time Measurement Circuit!
IG(Const.)
Fig.2-1 Gate Charge Measurement Circuit!
Fig.3-1 Avalanche Measurement Circuit
Fig.1-2 Switching Waveforms Fig.2-2 Gate Charge Waveform Fig.3-2 Avalanche Waveform
5/5
Appendix
Notes
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means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0