Data Sheet 10V Drive Nch MOSFET R6008FNJ Structure Silicon N-channel MOSFET Dimensions (Unit : mm) LPTS 10.1 1.3 13.1 9.0 Features 1) Fast reverse recovery time (trr) 4.5 1.0 1.24 2.54 0.78 2.7 5.08 (1) (2) 0.4 1.2 3.0 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage VGSS garanteed to be ±30V . (3) 5) Drive circuits can be simple. 6) Parallel use is easy. Inner circuit Application Switching ∗1 Packaging specifications Type Package Code Basic ordering unit (pieces) R6008FNJ Taping TL 1000 Absolute maximum ratings (Ta 25°C) Parameter Symbol Drain-source voltage Gate-source voltage VDSS VGSS (1) Gate (2) Drain (3) Source Limits Unit 600 30 V V Continuous ID *3 8 A Pulsed IDP *1 32 A Continuous Pulsed *3 8 32 A A Avalanche Current IS ISP IAS Avalanche Energy Power dissipation (Tc=25℃) Channel temperature Range of storage temperature EAS PD Tch Tstg *2 4 4.3 A mJ 50 150 55 to 150 W C C Limits 2.5 Unit C / W Drain current Source current (Body Diode) *1 *2 (1) (2) (3) 1 BODY DIODE *1 Pw10s, Duty cycle1% *2 L≒500H, VDD=50V, Rg=25, starting Tch=25℃ *3 Limited only by maximum temperature allowed. Thermal resistance Parameter Channel to Case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Symbol Rth (ch-c) 1/5 2011.10 - Rev.A Data Sheet R6008FNJ Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Min. Typ. Max. Unit IGSS - - 100 nA VGS=±30V, VDS=0V Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Conditions Symbol 600 - - V ID=1mA, V GS=0V IDSS - - 100 A VDS=600V, VGS=0V VGS (th) 2.0 - 4.0 V VDS=10V, ID=1mA RDS (on)* - 0.73 0.95 ID=4A, VGS=10V l Yfs l* 2.5 5.0 - S ID=4A, VDS=10V Input capacitance Ciss - 580 - pF VDS=25V Output capacitance Coss - 450 - pF VGS=0V Reverse transfer capacitance Crss - 25 - pF f=1MHz Turn-on delay time td(on) * - 20 - ns ID=4A, VDD 300V tr * - 25 - ns VGS=10V td(off) * - 60 - ns RL=75 Rise time Turn-off delay time Fall time tf * - 30 - ns RG=10 Total gate charge Qg * - 20 - nC ID=8A, Gate-source charge Qgs * Qgd * - 5 10 - nC nC VDD 300V VGS=10V Gate-drain charge *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Reverse Recovery Time Symbol VSD * trr * Min. Typ. Max. - 67 1.5 - Unit V ns Conditions Is=8A, VGS=0V Is=8A, di/dt=100A/s *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.10 - Rev.A Data Sheet R6008FNJ Electrical characteristic curves 100 1.0 PW =1ms 1 Pw=10ms 0.1 Ta = 25℃ Single Pulse VGS=7.0V 0.7 VGS=6.0V 0.6 VGS=5.0V 0.5 0.4 0.3 0.2 6 Ta=25℃ pulsed 5 1 10 100 2 1 DRAIN-SOURCE VOLTAGE : VDS [V] Fig.1 Maximum Safe Operating Area Fig.2 Typical Output Characteristics (Ⅰ) Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.1 0.01 0.001 0.0 1.5 3.0 4.5 6.0 5 4 3 2 1 0 -50 50 100 ID= 4.0A 0 10 GATE-SOURCE VOLTAGE : VGS (V) Fig.7 Static Drain-Source On-State Resistance vs. Gate Source Voltage www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 15 6 7 8 9 10 2.5 1 0.1 1 10 100 Drain Current : ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 100 VGS= 10V Pulsed 2 1.5 ID= 8.0A 1 ID= 4.0A 0.5 0 -50 VGS=10V pulsed Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 150 FORWARD TRANSFER ADMITTANCE : |Yfs| (S) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) ID= 8.0A 5 0.1 0 3 1.5 4 10 Fig.5 Gate Threshold Voltage vs. Channel Temperature Ta=25℃ pulsed 5 3 CHANNEL TEMPERATURE: Tch (℃) 2 0 2 Fig.3 Typical Output Characteristics (Ⅱ) VDS= 10V ID= 1mA Fig.4 Typical Transfer Characteristics 0.5 1 DRAIN-SOURCE VOLTAGE : VDS [V] 6 GATE-SOURCE VOLTAGE : VGS (V) 1 VGS=4.5V 0 Static Drain-Source On-State Resistance RDS(on) [Ω] GATE THRESHOLD VOLTAGE: VGS(th) (V) 10 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 DRAIN-SOURCE VOLTAGE: VDS (V) VDS= 10V Pulsed VGS=5.0V 3 0 1000 100 Ta=25℃ pulsed 4 0.0 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VGS=4.5V VGS=6.5V 0.1 0.01 DRAIN DRAIN CURRENT CURRENT :: IIDD (A) (A) 0.8 VGS=10.0V VGS=8.0V VGS=7.0V VGS=6.5V VGS=6.0V 7 VGS=8.0V DRAIN CURRENT : ID [A] Operation in this area is limited by RDS(ON) 10 8 VGS=10.0V 0.9 DRAIN CURRENT : ID [A] DRAIN CURRENT : ID (A) PW =100us 0 50 100 150 CHANNEL TEMPERATURE: Tch (℃) Fig.8 Static Drain-Source On-State Resistance vs. Channel Temperature 3/5 VDS= 10V Pulsed 10 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.1 0.01 0.01 0.1 1 10 100 DRAIN CURRENT : ID (A) Fig.9 Forward Transfer Admittance vs. Drain Current 2011.10 - Rev.A Data Sheet R6008FNJ 15 10000 100 10 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.1 Ciss 1000 Coss 100 Crss 10 0.01 Ta= 25℃ f= 1MHz VGS= 0V 0.5 1 1.5 2 0.01 SOURCE-DRAIN VOLTAGE : VSD (V) 0.1 1 10 100 1000 Ta= 25℃ VDD= 300V ID= 8.0A RG= 10Ω Pulsed 5 Fig.10 Source Current vs. Sourse-Drain Voltage 0 10 20 30 TOTAL GATE CHARGE : Qg (nC) DRAIN-SOURCE VOLTAGE : VDS (V) Fig.11 Typical Capacitance vs. Drain-Source Voltage 1000 10 0 1 0 Fig.12 Dynamic Input Characteristics 10000 SWITCHING TIME : t (ns) Ta= 25℃ di / dt= 100A / μs VGS= 0V Pulsed REVERSE RECOVERY TIME: trr (ns) GATE-SOURCE VOLTAGE : VGS (V) CAPACITANCE : C (pF) SOURCE CURRENT : IS (A) VGS= 0V Pulsed 100 Ta= 25℃ VDD= 300V VGS= 10V RG= 10Ω Pulsed 1000 tf 100 td(off) 10 td(on) tr 1 10 0.1 1 10 0.1 100 1 10 100 DRAIN CURRENT : ID (A) REVERSE DRAIN CURRENT : IS (A) Fig.14 Switching Characteristics Fig.13 Reverse Recovery Time vs. Source Current NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 10 1 Ta= 25℃ Single Pulse Rth(ch-a) (t) = r(t)×Rth(ch-a) Rth(ch-a) = 49.7℃/W 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.10 - Rev.A Data Sheet R6008FNJ Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) 90% td(off) tr ton tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit VGS IAS VDS V(BR)DSS D.U.T. RG L VDD IAS VDD EAS = Fig.3-1 Avalanche Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 2 L IAS V(BR)DSS V(BR)DSS - VDD Fig.3-2 Avalanche Waveform 5/5 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A