Reference Designs for DOE solution - Active-Semi

Innovative Green Power Solutions
AC/DC Charger/Adapter Reference Designs
For DOE (Level 6) Standard
Rev 1.5 Jan 2014
-1-
www.active-semi.com
High Performance AC/DC Switching Power Solutions
Application Change Note
Revision History
Page 9,10
Page 11,12
2014 - Jan - 26
Rev 1.5
Update schematic
Update transformer and BOM
Update schematic
Update transformer and BOM
Page 3,5,7,9,11,13
Update demo board picture
Page 9,10,11,12
Add ACT334 and ACT512 12V0.5A solutions
Page 19,20,21,22
Add ACT410 and ACT411 solutions, update ACT410/411 standby power
Cover Page
Change Title
Page 11,12
Add ACT413 5V2.4A solution
Page 13,14
Add ACT512 5V2.4A solution
Cover Page
Change Title and List
Table of Contents
1. ACT330 5V 1A Universal Charger for DOE standard…..……..…………………..………….…………………….………… .3
2. ACT334 5V 1A Universal Charger for DOE standard…..……..…………………..………….…………………….………… .5
3. ACT512 5V 2A Universal Adaptor for DOE standard…...………...…………………..………….………….…….……….… .7
4. ACT410 5V 2.1A Universal Adaptor for DOE standard………….……… …..…….…….…………………………..………..9
5. ACT413 5V 2.4A Universal Adaptor for DOE standard………….……… …..…….…….…………………………..………..11
6. ACT512 5V 2.4A Universal Adaptor for DOE standard………….………..…….…….…………………………..………..…..13
7. ACT512 5V 4A Universal Adaptor for DOE standard………….…………..…….…….…………………………..………..….15
8. ACT334 12V 0.5A Universal Adaptor for DOE standard …...…….………..……...….….…….………….…….…………….17
9. ACT512 12V 0.5A Universal Adaptor for DOE standard………….……….…….…..…..……..……………………..……….19
10. ACT411 12V 1A Universal Adaptor for DOE standard……… .…………..…….…….…………………………..………..…21
11. ACT512 12V 1A Universal Adaptor for DOE standard …...……...……..………..……...…….………….…….……………23
12. ACT513 12V 2A Universal Adaptor for DOE standard………….……….…….………..…..……………………..………….25
-2For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
ACT330 5V/1A UNIVERSAL CHARGER FOR DOE SOLUTION
Input Voltage
Device
Average
Efficiency
Standby Power
Output Voltage
Output Power
Topology
90-264VAC
ACT330
75.10%
38mW
5V
5W
PSR flyback
Key Features
Demo Board Picture
• Patented Primary Side Regulation Technology
• Lowest total cost solution for cell phone
charger using PWM IC
• Universal input voltage range from 85 to 264
VAC
• Accurate CV (5%) and CC (10%) performance
• Adjustable up to 40kHz Switching Frequency
• Integrated Output Cord Compensation
• CV & CC correction for Input line, output DC
cord and transformer inductance variation
• No-load standby power < 0.05W
• Exceed the latest DOE average efficiency requirement
Normal size
• No Y capacitor for EMI filter
• Short circuit and over-voltage protection
• Tiny SOT23-6 package.
W*L*H=29mm*48.5mm*16mm
Schematic
Picture 1
-3For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
Bill of Materials
U1
DESCRIPTION
IC, ACT330,SOT23-6
Capacitor, Electrolytic, 6.8uF/400V, 10x12mm
KSC
C3
Capacitor, Ceramic, 1000pF/500V,1206,SMD
POE
C4
Capacitor, Electrolytic,4.7uF/35V,5x11mm
KSC
C5
Capacitor, Solid, 470uF/10V, 8x12mm
Capacitor, Electrolytic, 330uF/10V, 8x12mm
KSC
C9
Capacitor, Ceramic,1000pF/50V, 0805, SMD
POE
D1-D4
Diode,Rectifier,1000V/1A,1N4007, DO-41
Good-Ark
D5,D6
Diode,Ultra Fast, FR107,1000V/1.0A, DO-41
Good-Ark
L1
Axial Inductor, 1.5mH, 0410,Dip
P1
Transistor, HFE 20-25, NPN,13003,TO-126
Huawei
PCB, L*W*T=48.5x29x1.6mm,Cem-1,Rev:A
Jintong
FR1
Wire Round Resistor,1W,10 ohm, KNP, 5%
TY-OHM
R1
Chip Resistor, 22 ohm, 0603, 5%
TY-OHM
R2
Chip Resistor, 750K ohm, 1206, 5%
TY-OHM
R3
Chip Resistor, 470 ohm, 1206, 5%
TY-OHM
R4
Chip Resistor, 22 ohm, 0805, 5%
TY-OHM
R5
Chip Resistor, 60.4K ohm, 0805,1%
TY-OHM
R6
Chip Resistor, 10.2K ohm, 0805, 1%
TY-OHM
R7,R8
Chip Resistor, 5.1M ohm, 1206, 5%
TY-OHM
R9
Chip Resistor, 0.787 ohm, 1206,1%
TY-OHM
R10
Chip Resistor, 80K ohm, 0805, 5%
TY-OHM
R11
Chip Resistor, 2.2K ohm, 0805, 5%
TY-OHM
R13
Chip Resistor, 10 ohm, 0805, 5%
TY-OHM
Finish
2
-->
<--
SH1
P2
SH2
Wire
Turn
s
<-1
5
S1
Amode Tech
Q1
Sta
rt
-->
Vishay
PCB1
T1
Windi
ng
Rubcon
C6
Diode, schottky, 40V/5A, SL540, DO-214AB,SMD
Terminal
MFTR
Active-Semi.
C1,C2
D8
Build up
NC
8
10
3
5
4
3
Cor
e
1
Insulation
Type
Size*QTY
Laye
r
47
2UE
W
0.15Φ*1
1
0.025*8.
5W
1
47
2UE
W
1
0.025*8.
5W
1
46
2UE
W
1
0.025*8.
5W
2
1
0.025*8.
5W
2
1
0.025*8.
5W
2
0.15Φ*1
0.15Φ*1
8
2UE
W
10
TEXE
14
1
0.15Φ*4
0.50Φ*1
2UE
W
0.15Φ*2
2UE
W
0.15Φ*1
Thick/
Wide
Lay
er
1
0.025*8.
5W
2
1
0.025*8.
5W
2
Note:1,Core and Bobbin:EE16
2,SH1 and SH2 are shielding; P1 & P2 are primary and S1 is secondary
3,Reverse the direction of bobbin when do the S1.
♦
Item
Electrical specifications
Description
Condition
Limits
1
Electrical
Strength
50Hz, 1 minute, from primary and secondary
3000 Vac
2
P1 Inductance
Inductance between pins 1 and 2 at 1Vac
& 1kHz
1.8mH±%7
3
P1 Leakage
Inductance
Inductance between pins 1 and 2 with pins
4-5 and 8-10 shorted
75µH
Typical Performance Characteristics
Standby Power Vs Input Voltage
Standy Power (mW)
REF
♦
Transformer, Lp=1.8mH, EE16
60
50
40
30
20
10
0
90
115
230
264
Input Voltage (VAC)
STANDBY POWER
Efficiency Vs Po
Transformer
Efficiency
80.00%
115V
78.00%
230V
76.00%
74.00%
72.00%
70.00%
25% Po
50% Po
75% Po
100% Po
Output Power
EFFICIENCY(24AWG,1.8M,R=0.308Ω)
EVALUATION KITS
ACT330_5V1A_DOE_Rev1.0
-4For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
ACT334 5V/1A UNIVERSAL CHARGER FOR DOE STANDARD
Input Voltage
Device
Average
Efficiency
Standby Power
Output Voltage
Output Power
Topology
90-264VAC
ACT334
75.60%
39mW
5V
5W
PSR flyback
Key Features
Demo Board Picture
• Patented Primary Side Regulation Technology
• Lowest total cost solution for cell phone
charger using PWM IC
• Universal input voltage range from 85 to 264
VAC
• Accurate CV (5%) and CC (10%) performance
• Adjustable up to 80kHz Switching Frequency
• Integrated Output Cord Compensation
• CV & CC correction for Input line, output DC
cord and transformer inductance variation
• No-load standby power < 0.05W
• Exceed the latest DOE average efficiency requirement
Mini size
• No Y capacitor for EMI filter
• Short circuit and over-voltage protection
• Tiny SOT23-6 package.
W*L*H=25.5mm*46.5mm*16mm
Schematic
Picture 2
-5For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
Bill of Materials
REF
DESCRIPTION
U1
IC, ACT334,SOT23-6
C1
Capacitor, Electrolytic, 4.7uF/400V, 8x12mm
♦
Build up
Terminal
MFTR
Windi
ng
Active-Semi.
KSC
P1
C2
C3
Capacitor, Electrolytic, 6.8uF/400V, 10x12mm
Capacitor, Ceramic, 1000pF/500V,1206,SMD
C4
Capacitor, Electrolytic,4.7uF/35V,5x11mm
C5
Capacitor, Solid, 470uF/10V, 8x12mm
C6
Capacitor, Electrolytic, 330uF/10V, 8x12mm
C9
Capacitor, Ceramic,1000pF/50V, 0805, SMD
KSC
SH1
Rubcon
P2
POE
SH2
D5,D6
Diode,Ultra Fast, FR107,1000V/1.0A, DO-41
Good-Ark
D8
Diode, schottky, 40V/5A, SL540, DO-214AB,SMD
L1
Axial Inductor, 1.5mH, 0410,Dip
Q1
Transistor, HFE 20-25, NPN,13003,TO-126
Huawei
PCB1
PCB, L*W*T=48.5x29x1.6mm,Cem-1,Rev:A
Jintong
FR1
Wire Round Resistor,1W,10 ohm,KNP, 5%
TY-OHM
R1
Chip Resistor, 22 ohm, 0603, 5%
TY-OHM
R2
Chip Resistor, 750K ohm, 1206, 5%
TY-OHM
R3
Chip Resistor, 470 ohm, 1206, 5%
TY-OHM
R4
Chip Resistor, 22 ohm, 0805, 5%
TY-OHM
R5
Chip Resistor, 68K ohm, 0805,1%
TY-OHM
R6
Chip Resistor, 11.8K ohm, 0805, 1%
TY-OHM
Chip Resistor, 10M ohm, 1206, 5%
TY-OHM
R9
Chip Resistor, 1 ohm, 1206,1%
TY-OHM
R10
Chip Resistor, 75K ohm, 0805, 5%
TY-OHM
R11
Chip Resistor, 3.3K ohm, 0805, 5%
TY-OHM
R13
T1
Chip Resistor, 10 ohm, 0805, 5%
Wire
Turn
s
<-1
NC
6
8
(5)
4
3
(5)
Cor
e
1
Insulation
Type
Size*QTY
Laye
r
38
2UE
W
0.15Φ*1
1
0.025*8.
5W
1
38
2UE
W
1
0.025*8.
5W
1
38
2UE
W
1
0.025*8.
5W
2
1
0.025*8.
5W
2
1
0.025*8.
5W
2
0.15Φ*1
0.15Φ*1
7
2UE
W
8
TEXE
11
1
0.15Φ*4
0.55Φ*1
2UE
W
0.25Φ*2
2UE
W
0.15Φ*1
Thick/
Wide
Lay
er
1
0.025*8.
5W
2
1
0.025*8.
5W
2
Note:1,Core and Bobbin:EE13
2,SH1 and SH2 are shielding; P1 & P2 are primary and S1 is secondary
3,Reverse the direction of bobbin when do the S1.
Vishay
♦
Amode Tech
Item
Electrical specifications
Description
Condition
Limits
1
Electrical
Strength
50Hz, 1 minute, from primary and secondary
3000 Vac
2
P1 Inductance
Inductance between pins 1 and 2 at 1Vac
& 1kHz
1.5mH±%7
3
P1 Leakage
Inductance
Inductance between pins 1 and 2 with pins
4-3 and 8-6 shorted
75µH
Typical Performance Characteristics
Standby Power Vs Input Voltage
Standy Power (mW)
R7,R8
-->
4
S1
KSC
Good-Ark
2
-->
POE
Diode,Rectifier,1000V/1A,1N4007, DO-41
Finish
<--
KSC
D1-D4
Sta
rt
60
50
40
30
20
10
0
90
115
230
264
Input Voltage (VAC)
TY-OHM
STANDBY POWER
Transformer, Lp=1.5mH, EE13
Efficiency Vs Po
Transformer
Efficiency
80.00%
115V
78.00%
230V
76.00%
74.00%
72.00%
70.00%
25% Po
50% Po
75% Po
100% Po
Output Power
EFFICIENCY(24AWG,1.8M,R=0.308Ω)
EVALUATION KITS
ACT334_5V1A_DOE_Rev1.0
-6For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
ACT512 5V/2A UNIVERSAL ADAPTOR FOR DOE STANDARD
Input Voltage
Device
Average
Efficiency
Standby Power
Output Voltage
Output Power
Topology
90-264VAC
ACT512
80.30%
90mW
5V
10W
CCM&QR
flyback
and overload protection.
Key Features
• Optimized CCM and advanced Quasi-Resonant
• Tiny SOT23-6 package.
operation.
Demo Board Picture
• Advanced burst mode operation enables low
standby power of 100mW.
• Frequency jetting and Quasi-Resonant technology to decrease EMI.
• Patented frequency foldback and ActiveQRTM
technology increases the average system efficiency compared to conventional solutions and
exceeds the latest DOE efficiency standard with
good margin.
• Integrated patented line compensation, provide
OCP/OLP protection.
• Built-in Soft-Start and Fast-Start circuit to decrease main external mosfet stress, output voltage rise time and output voltage overshoot.
• Integrate comprehensive protection. In case of
Normal size
over temperature, over/under voltage, short
winding, short current sense resistor, open loop
W*L*H=38mm*38mm*22mm
Schematic
Picture 3
-7For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
Transformer
Bill of Materials
REF
DESCRIPTION
MFTR
IC1
IC, ACT512, SOT23-6
Active-Semi
C1
Capacitor, Electrolytic, 10µF/400V, 10 × 14mm
KSC
C2
Capacitor, Electrolytic, 10µF/400V, 10 × 14mm
POE
C3
Capacitor, Solid, 470µF/16V, 8 × 11mm
C4
Capacitor, Electrolytic,6.8µF/35V, SMD 0805
C5
Capacitor, Ceramic, 100PF/50V,0603,SMD
POE
C6
Capacitor, Ceramic,1000pF/50V,0603,SMD
POE
C7
Capacitor, Ceramic,100pF/10V,1812,SMD
POE
C0
Capacitor, Ceramic,100nF/100V,0603,SMD
POE
C13
Capacitor, Ceramic,1000pF/500V,0805,SMD
POE
Rubcon
POE
♦
Build up
Terminal
D3
Dgate
L1
Q1
PCB1
RS1M SMD
Diode, Schottky, 60V/30A, SBR3060, DO-220
Diode L4148 SMD
Axial Inductor, 1.5mH, 5*7, DIP
Good-Ark
Diodes
PCB, L*W*T =38x38x1mm, Cem-1, Rev:A
Jintong
Fusible, 1A/250V
TY-OHM
R1
Chip Resistor,1M Ω, SMD 1206, 5%
TY-OHM
R2
Chip Resistor,1M Ω, SMD 1206, 5%
TY-OHM
R3
Chip Resistor, 4.7Ω, 0805, 5%
TY-OHM
R3B
Chip Resistor, 22Ω, 0805, 5%
TY-OHM
R4
Chip Resistor,60.4kΩ, 0603, 1%
TY-OHM
R5
Chip Resistor,11kΩ, 0603, 1%
TY-OHM
R6
Chip Resistor, 10 Ω, 0603, 5%
TY-OHM
R7
Chip Resistor, 1kΩ,0603, 5%
TY-OHM
R8
Chip Resistor, 1KΩ, 0603, 5%
TY-OHM
R0
Chip Resistor, 3kΩ, 0603, 5%
TY-OHM
R9
Chip Resistor, 1.5Ω, 1206, 1%
TY-OHM
R10
Chip Resistor, 10.7kΩ, 0603, 1%
TY-OHM
R11
Chip Resistor, 10kΩ, 0603, 1%
TY-OHM
R12
Chip Resistor, 100Ω, 0805,5%
TY-OHM
R13
Chip Resistor,750kΩ, 0805,5%
TY-OHM
R14
Chip Resistor,360Ω, 0603, 5%
TY-OHM
Opto-coupler, PC817C CTR=200 SMD
IC2
Voltage Regulator, TL431A, Vref=2.5V TO-92
SH1
3
NC
15
S1
B
A
7
P2
4
3
17
P3
F
1
32
Type
Thick/
Wide
Layer
2UEW
0.18Φ*1
1
0.025*11W
2
2UEW
0.12Φ*3
1
0.025*11W
2UEW
0.45Φ*2
1
0.025*11W
2
2UEW
0.15Φ*2
1
0.025*11W
2
2UEW
0.18Φ*1
1
0.025*11W
2
Electrical specifications
Item
Description
Condition
Limits
1
Electrical
Strength
50Hz, 1 minute, from primary and secondary
3000 Vac
2
P1 Inductance
Inductance between pins 2and 1at 1Vac &
1kHz
1.3mH±%7
3
P1 Leakage
Inductance
Inductance between pins 3 with pins4and AB shorted
75µH
Typical Performance Characteristics
Standby Power Vs Input Voltage
100
50
0
90
115
230
264
Input Voltage (VAC)
STANDBY POWER
Efficiency Vs Po
90.00%
RM6 Lm=1.3mH
Y capacitance, 1000pF/400V,Y1
32
♦
SoKa
Infineon
IC3
F
La
yer
Good-Ark
Mosfet Transisor, 04N65, TO-220
CY1
2
Insulation
Size*QT
Y
Note:1,Core and Bobbin:RM6
2,SH1 is shielding; P1,P2 & P3 are primary and S1 is secondary
3,Reverse the direction of bobbin when do the S1
Good-Ark
F1
L1
Finish
P1
Standy Power (mW)
D1,D2
MB6S 1.5A/400V
Start
Turn
s
Efficiency
BD
Wire
Winding
SEC
Sharp
115V
85.00%
230V
80.00%
75.00%
70.00%
ST
25% Po
50% Po
75% Po
100% Po
Output Power
EFFICIENCY(20AWG,1.8M,R=0.13Ω)
EVALUATION KITS
ACT512_5V2A_DOE_Rev1.0
-8For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
ACT410 5V/2.1A UNIVERSAL CHARGER FOR DOE SOLUTION
Input Voltage
Device
Average
Efficiency
Standby Power
Output Voltage
Output Power
Topology
90-264VAC
ACT410
80%
90mW
5V
10.5W
PSR flyback
Key Features
Demo Board Picture
• Patented primary switching regulator technology, DCM & Quasi-Resonant PWM Controller
• Lowest total cost solution for cell phone
charger using PWM IC
• Universal input voltage range from 85 to 264
VAC
• Accurate CV (5%) and CC (15%) performance
• Adjustable up to 110kHz Switching Frequency
• Integrated Output Cord Compensation
• CV & CC correction for Input line, output DC
cord and transformer inductance variation
• No-load standby power < 0.10W
• Exceed the latest DOE average efficiency re-
Normal size
quirement
W*L*H=21mm*40mm*10mm
• Short circuit and over-voltage protection
• Tiny SOT23-6 package.
Schematic
Picture 4
-9For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
Bill of Materials
♦
REF
DESCRIPTION
MFTR
U1
IC, ACT410,SOT23-6
Active-Semi.
Build up
Terminal
Wire
C8
Capacitor, Ceramic, 0.1uF/25V, 0805,SMD
POE
P2
5
4
20
C9
Capacitor, Ceramic, 1000pF/100V, 0805,SMD
POE
P3
3
1
38
Typ
e
2UE
W
2UE
W
TEX
-E
2UE
W
2UE
W
C10
Capacitor, Ceramic, 200pF/100V, 0805,SMD
POE
CY1
Safety Y1,Capacitor,1000pF/400V,Dip
UXT
3
Cop
per
wire
BD1
Bridge Rectifier,D1010S,1000V/1.0A,SDIP
PANJIT
D2
Fast Recovery Rectifier, RS1M,1000V/1.0A, RMA
PANJIT
D3
Fast Recovery Rectifier,RS1D,200V/1.0A,SMA
PANJIT
D4
Diode, Schottky, 45V/10A, S10U45S, SMD
Diodes
D5
Diode, 1N4148 SMD
PANJIT
L1
Axial Inductor, 1.5mH, 5*7,Dip
SoKa
Q1
Mosfet Transistor, 4N65,TO-220
AUK
PCB1
PCB, L*W*T=40x28x1.6mm,Cem-1,Rev:A
Jintong
FR1
Fuse,1A/250V
TY-OHM
R2
Carbon Resistor, 200K ohm, 1206, 5%
TY-OHM
R3
Chip Resistor, 100 ohm, 0805, 5%
TY-OHM
R1,R4
Chip Resistor, 22 ohm, 0805, 5%
C1,C2
Capacitor, Electrolytic, 10uF/400V, 10x15mm
KSC
C3
Capacitor, Ceramic, 1000pF/500V, 0805,SMD
POE
C6,C7
Capacitor, Electrolytic,10uF/35V,5x11mm
Capacitor, Electrolytic, 820µF/6.3V, 6.3 × 16mm
Start
Finish
P1
2
3
SH1
KSC
KSC
Chip Resistor, 68K ohm, 0805,1%
TY-OHM
R6
Chip Resistor, 11.5K ohm, 0805, 1%
TY-OHM
R7
Chip Resistor, 1M ohm, 0805 , 5%
TY-OHM
R8
Chip Resistor, 1M ohm, 0805 , 5%
TY-OHM
R9
Chip Resistor, 1.1ohm, 1206,1%
TY-OHM
R10
Chip Resistor, 240 ohm, 0805 , 5%
TY-OHM
R11
Chip Resistor, 3.0K ohm, 0805, 5%
R12
Chip Resistor, 3K ohm, 0805 , 5%
R13
Chip Resistor, 22 ohm, 1206, 5%
TY-OHM
R14
Chip Resistor, 100K ohm, 0805, 5%
TY-OHM
R15
Chip Resistor, 4K ohm, 0805, 5%
TY-OHM
T1
Transformer, Lp=0.36mH, EFD15
TY-OHM
NC
B
A
SH2
core
4
Turns
38
45
7
Size*QT
Y
La
yer
0.20Φ*1
1
0.15Φ*3
1
0.40Φ*2
1
0.20Φ*2
1
0.20Φ*1
1
Thick/
Wide
0.025*11
W
0.025*11
W
0.025*11
W
0.025*11
W
0.025*11
W
0.18Φ*1
1
0.025*11
W
La
ye
r
2
2
2
2
2
Note:1,Core and Bobbin:EFD15
2,SH1 and SH2 are shielding; P1 & P2 are primary and S1 is secondary
3,Reverse the direction of bobbin when do the S1.
♦
Item
Electrical specifications
Description
Condition
Limits
1
Electrical
Strength
50Hz, 1 minute, from primary and secondary
3000 Vac
2
P1 Inductance
Inductance between pins 1 and 2 at 1Vac
& 1kHz
0.36mH±%7
3
P1 Leakage
Inductance
Inductance between pins 1 and 2 with pins
4-5 and A-B shorted
75µH
Typical Performance Characteristics
TY-OHM
R5
4
S1
Standby Power Vs Input Voltage
Standy Power (mW)
C4
Windi
ng
Insulation
TY-OHM
160
140
120
100
80
60
40
20
0
85
115
230
264
Input Voltage (VAC)
STANDBY POWER
Efficiency Vs Po
Efficiency
84.000%
Transformer
80.000%
76.000%
115V
230V
72.000%
68.000%
64.000%
60.000%
25% Po
50% Po
75% Po
100% Po
Output Power
EFFICIENCY USB TERMINAL( MALE AND FEMALE )
EVALUATION KITS
ACT410_5V2.1A_DOE_Rev1.0
-10For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
ACT413 5V/2.4A UNIVERSAL ADAPTOR FOR DOE STANDARD
Input Voltage
Device
Average
Efficiency
Standby Power
Output Voltage
Output Power
Topology
90-264VAC
ACT413
83.10%
93mW
5V
12W
PSR
flyback
Key Features
Demo Board Picture
• Patented primary switching regulator technology, DCM & Quasi-Resonant PWM Controller
• Lowest total cost solution for cell phone
charger using PWM IC
• Universal input voltage range from 85 to 264
VAC
• Accurate CV (5%) and CC (15%) performance
• Adjustable up to 80kHz Switching Frequency
• Integrated Output Cord Compensation
• CV & CC correction for Input line, output DC
cord and transformer inductance variation
• No-load standby power < 0.1W
• Exceed the latest DOE average efficiency re-
Flat size
quirement
W*L*H=43mm*65mm*10mm
• Short circuit and over-voltage protection
• Tiny SOT23-6 package.
Schematic
Picture 5
-11For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
Bill of Materials
♦
Build up
REF
DESCRIPTION
MFTR
U1
IC, ACT413,SOT23-6
Active-Semi.
C1,C2
Capacitor, Electrolytic, 15uF/400V, 10x15mm
KSC
C3
Capacitor, Ceramic, 1000pF/500V, 0805,SMD
POE
P1
C4
Capacitor, Electrolytic,6.8uF/35V,5x11mm
KSC
SH1
Capacitor, Solid, 680µF/6.3V, 6.3 × 16mm
KSC
C9
C12
Capacitor, Solid,330µF/6.3V, 6.3 × 16mm
Terminal
Windi
ng
KSC
Start
Wire
Finish
9
8
3
NC
S1
A
B
P2
8
2
3
6
3
7
Tur
ns
28
18
5
28
Insulation
La
yer
2UEW
0.20Φ*1
1
2UEW
0.15Φ*2
1
TEX-E
0.6Φ*1
1
2UEW
0.20Φ*1
1
Thick/
Wide
0.025*11
W
0.025*11
W
0.025*11
W
0.025*11
W
1
0.025*11
W
2
1
0.025*11
W
2
C11
Capacitor, Ceramic, 0.1uF/25V, 0805,SMD
POE
C8
Capacitor, Ceramic, 1000pF/100V, 0805,SMD
POE
C7
Capacitor, Ceramic, 200pF/50V, 0805,SMD
POE
CY1
Safety Y1,Capacitor,1000pF/400V,Dip
UXT
BD1
Bridge Rectifier,D1010S,1000V/1.0A,SDIP
PANJIT
D1
Fast Recovery Rectifier, RS1M,1000V/1.0A, RMA
PANJIT
♦
D2
Fast Recovery Rectifier,RS1M,1000V/1.0A,SMA
PANJIT
Item
D3,D4
Diode, Schottky, 45V/10A, S10U45S, SMD
Diodes
1
Diode, 1N4148 SMD
PANJIT
Electrical
Strength
50Hz, 1 minute, from primary and secondary
3000 Vac
D1’
L1
Axial Inductor, 1.5mH, 5*7,Dip
SoKa
2
P1 Inductance
Inductance between pins 9 and 6 at 1Vac
& 1kHz
0.60mH±%7
3
P1 Leakage
Inductance
Inductance between 9 pins 6 with pins AB and pins 2-3 shorted
75µH
P3
SH2
core
3
La
ye
r
Type
Size*QT
Y
13
2UEW
3
Copper
wire
0.2Φ*2
0.2Φ*1
2
2
2
2
Note:1,Core and Bobbin:ER2010
2,SH1 and SH2 are shielding; P1,P2 & P3 are primary and S1 is secondary
Electrical specifications
Description
Condition
Limits
L2
Axial Inductor, 1.5mH, 5*7,Dip
SoKa
Q1
Mosfet Transistor,4N60,TO-220
AUK
PCB1
PCB, L*W*T=40x28x1.6mm,Cem-1,Rev:A
Jintong
FR1
Fuse,1A/250V
TY-OHM
R5
Carbon Resistor, 510K ohm, 1206, 5%
TY-OHM
R4
Chip Resistor, 100 ohm, 0805, 5%
TY-OHM
R11,R1
4,R15
Chip Resistor, 22 ohm, 0805, 5%
TY-OHM
R10
Chip Resistor, 51.1K ohm, 0805,1%
TY-OHM
R12
Chip Resistor, 10.2K ohm, 0805, 1%
TY-OHM
R2
Chip Resistor, 1M ohm, 0805 , 5%
TY-OHM
R3
Chip Resistor, 1M ohm, 0805 , 5%
TY-OHM
R7
Chip Resistor, 1.15ohm, 1206,1%
TY-OHM
R8
Chip Resistor, 470 ohm, 0805 , 5%
TY-OHM
Input Voltage (VAC)
R1
Chip Resistor, 3.0K ohm, 0805, 5%
TY-OHM
STANDBY POWER
R18
Chip Resistor, 1.2K ohm, 0805 , 5%
TY-OHM
R9
Chip Resistor, 100K ohm, 0805, 5%
TY-OHM
T1
Transformer, Lp=0.6mH, ER2010
Typical Performance Characteristics
Standy Power mW)
Standby Power Vs Input Voltage
140
90
40
-10
90
115
230
264
Efficiency
Efficiency Vs Po
Transformer
80.00%
70.00%
115V
60.00%
230V
50.00%
40.00%
25% Po
50% Po
75% Po
100% Po
Output Power
EFFICIENCY ( USB TERMINAL )
EVALUATION KITS
ACT413_5V2.4A_DOE_Rev1.0
-12For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
ACT512 5V/2.4A UNIVERSAL ADAPTOR FOR DOE STANDARD
Input Voltage
Device
Average
Efficiency
Standby Power
Output Voltage
Output Power
Topology
90-264VAC
ACT512
82.30%
84mW
5V
12W
CCM&QR
flyback
and overload protection.
Key Features
• Tiny SOT23-6 package.
• Optimized CCM and advanced Quasi-Resonant
operation.
Demo Board Picture
• Advanced burst mode operation enables low
standby power of 100mW.
• Frequency jetting and Quasi-Resonant technology to decrease EMI.
• Patented frequency foldback and ActiveQRTM
technology increases the average system efficiency compared to conventional solutions and
exceeds the latest DOE efficiency standard with
good margin.
• Integrated patented line compensation, provide
OCP/OLP protection.
• Built-in Soft-Start and Fast-Start circuit to decrease main external mosfet stress, output voltage rise time and output voltage overshoot.
• Integrate comprehensive protection. In case of
over temperature, over/under voltage, short
winding, short current sense resistor, open loop
Normal size
W*L*H=38mm*38mm*22mm
Schematic
Picture 6
-13For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
Transformer
Bill of Materials
REF
DESCRIPTION
MFTR
IC1
IC, ACT512, SOT23-6
Active-Semi
C1
Capacitor, Electrolytic, 10µF/400V, 10 × 14mm
KSC
C2
Capacitor, Electrolytic, 10µF/400V, 10 × 14mm
POE
C3
Capacitor, Solid, 470µF/16V, 8 × 11mm
C4
Capacitor, Electrolytic,6.8µF/35V, SMD 0805
C5
Capacitor, Ceramic, 100PF/50V,0603,SMD
POE
C6
Capacitor, Ceramic,1000pF/50V,0603,SMD
POE
C7
Capacitor, Solid, 470µF/16V, 8 × 11mm
C0
Capacitor, Ceramic,100nF/100V,0603,SMD
POE
C13
Capacitor, Ceramic,1000pF/500V,0805,SMD
POE
Rubcon
POE
♦
Build up
Terminal
D3
Dgate
L1
Q1
PCB1
RS1M SMD
Diode, Schottky, 60V/30A, SBR3060, DO-220
Diode L4148 SMD
Axial Inductor, 1.5mH, 5*7, DIP
Good-Ark
Diodes
Infineon
PCB, L*W*T =38x38x1mm, Cem-1, Rev:A
Jintong
TY-OHM
R1
Chip Resistor,1M Ω, SMD 1206, 5%
TY-OHM
R2
Chip Resistor,1M Ω, SMD 1206, 5%
TY-OHM
R3
Chip Resistor, 4.7Ω, 0805, 5%
TY-OHM
Chip Resistor, 22Ω, 0805, 5%
TY-OHM
R4
Chip Resistor,60.4kΩ, 0603, 1%
TY-OHM
R5
Chip Resistor,11kΩ, 0603, 1%
TY-OHM
R6
Chip Resistor, 10 Ω, 0603, 5%
TY-OHM
R7
Chip Resistor, 200Ω,0603, 5%
TY-OHM
R8
Chip Resistor, 1KΩ, 0603, 5%
TY-OHM
R0
Chip Resistor, 3kΩ, 0603, 5%
TY-OHM
R9
Chip Resistor, 1.37Ω, 1206, 1%
TY-OHM
R10
Chip Resistor, 5.36kΩ, 0603, 1%
TY-OHM
R11
Chip Resistor, 5.31kΩ, 0603, 1%
TY-OHM
R12
Chip Resistor, 100Ω, 0805,5%
TY-OHM
R13
Chip Resistor,750kΩ, 0805,5%
TY-OHM
R14
Chip Resistor,360Ω, 0603, 5%
TY-OHM
IC3
Opto-coupler, PC817C CTR=200 SMD
IC2
Voltage Regulator, TL431A, Vref=2.5V TO-92
32
SH1
3
NC
15
S1
B
A
7
P2
4
3
17
P3
F
1
32
Item
Type
Thick/
Wide
Layer
2UEW
0.18Φ*1
1
0.025*11W
2
2UEW
0.12Φ*3
1
0.025*11W
2UEW
0.45Φ*2
1
0.025*11W
2
2UEW
0.15Φ*2
1
0.025*11W
2
2UEW
0.18Φ*1
1
0.025*11W
2
Electrical specifications
Description
Condition
Limits
1
Electrical
Strength
50Hz, 1 minute, from primary and secondary
3000 Vac
2
P1 Inductance
Inductance between pins 2and 1at 1Vac &
1kHz
1.1mH±%7
3
P1 Leakage
Inductance
Inductance between pins 3 with pins4and AB shorted
75µH
Typical Performance Characteristics
Standby Power Vs Input Voltage
120
100
80
60
40
20
0
90
115
230
264
Input Voltage (VAC)
STANDBY POWER
Efficiency Vs Po
90.00%
RM6 Lm=1.1mH
Y capacitance, 1000pF/400V,Y1
F
♦
SoKa
Mosfet Transisor, 04N65, TO-220
CY1
2
La
yer
Good-Ark
Fusible, 1A/250V
L1
Finish
P1
Insulation
Size*QT
Y
Note:1,Core and Bobbin:RM6
2,SH1 is shielding; P1,P2 & P3 are primary and S1 is secondary
3,Reverse the direction of bobbin when do the S1
Good-Ark
F1
R3B
Start
Turn
s
Standy Power (mW)
D1,D2
MB6S 1.5A/400V
Wire
Winding
Efficiency
BD
Rubcon
SEC
Sharp
80.00%
115V
70.00%
230V
60.00%
50.00%
25% Po
ST
50% Po
75% Po
100% Po
Output Power
EFFICIENCY(20AWG,1.8M,R=0.13Ω)
EVALUATION KITS
ACT512_5V2.4A_DOE_Rev1.0
-14For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
ACT512 5V/4A UNIVERSAL ADAPTOR FOR DOE STANDARD
Input Voltage
90-264VAC
Device
ACT512
Average
Efficiency
Standby Power
85.30%
92mW
5V
Output
Power
20W
Topology
CCM,QR
Flyback,
Synchronous
Rectification
over temperature, over/under voltage, short
winding, short current sense resistor, open loop
and overload protection.
Key Features
• Optimized CCM and advanced Quasi-Resonant
operation.
Output
Voltage
• Tiny SOT23-6 package.
• Advanced burst mode operation enables low
Demo Board Picture
standby power of 100mW.
• Frequency jetting and Quasi-Resonant technology to decrease EMI.
• Patented frequency foldback and ActiveQRTM
technology increases the average system efficiency compared to conventional solutions and
exceeds the latest DOE efficiency standard with
good margin.
• Integrated patented line compensation, provide
OCP/OLP protection.
• Built-in Soft-Start and Fast-Start circuit to decrease main external mosfet stress, output voltage rise time and output voltage overshoot.
Mini size
W*L*H=43mm*51.5mm*25mm
• Integrate comprehensive protection. In case of
Schematic
Picture 7
-15For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
Transformer
Bill of Materials
1
REF
IC1
DESCRIPTION
IC, ACT512, SOT23-6
MFTR
A
P3
7
S1
Active-Semi
C1
Capacitor, Electrolytic, 47µF/400V, 18 × 20mm
KSC
C3
Capacitor, Ceramic,1000pF/1KV,DIP
POE
C4
Capacitor, Electrolytic,4.7µF/50V,5*11mm
KSC
C5
Capacitor, Electrolytic,1500uF/16V, 10*16mm
POE
C6
Capacitor, Electrolytic,1000uF/16V, 8*16mm
POE
C8
Capacitor, Ceramic, 0.1µF/50V,0805,SMD
POE
P1
8
B
NC
9
P2
12
♦
Build up
Terminal
Wire
Insulation
C10
Capacitor, Ceramic,1000pF/100V,0805,SMD
POE
Winding
Start
Finish
Turn
s
Cfb
Capacitor, Ceramic,100pF/50V,0805,SMD
POE
P1
8
7
30
SH1
12
11
17
2UEW
0.15Φ*3
1
0.025*11W
BD1
GBL10 2A600V DIP
Good-Ark
S1
B
A
5
TEX-E
0.55Φ*2
1
0.025*11W
2
Diode, Ultra Fast, FR107,1000V/1.0A, DO-41
Good-Ark
P2
9
12
13
2UEW
0.27Φ*2
1
0.025*11W
2
P3
7
1
30
2UEW
0.27Φ*1
1
0.025*11W
2
D5
D6
Q2
Dgate
RS1M SMD
Mosfet Transisor, 30A40V, IPD160N04L,TO-252
Diode L4148 SMD
Good-Ark
infineon
CM Inductor, 20mH, UU9.8
SoKa
Q1
Mosfet Transisor, 4N65, 4A650V,TO-220
AUK
♦
PCB, L*W*T =51x43x1.6mm, Cem-1, Rev:A
Thick/
Wide
Layer
2UEW
0.27Φ*1
1
0.025*11W
2
Electrical specifications
Item
PCB1
La
yer
Note:1,Core and Bobbin:RM8
2,SH1 is shielding; P1,P2 & P3 are primary and S1 is secondary
3,Reverse the direction of bobbin when do the S1
Good-Ark
LF1
Type
Size*QT
Y
Jintong
Description
Condition
Limits
F1
Fusible, 2A/250V
TY-OHM
1
Electrical
Strength
50Hz, 1 minute, from primary and secondary
3000 Vac
R1
Chip Resistor,22 Ω, SMD 0805, 5%
TY-OHM
2
P1 Inductance
Inductance between pins 8 and 1 at 1Vac & 1kHz
1.2mH±%7
R2
metal Resistor,100K Ω,DIP,1W,5%
TY-OHM
3
Chip Resistor, 100Ω, 1206, 5%
TY-OHM
P1 Leakage
Inductance
Inductance between pins 8 and 1 with pins9-12and A
-B
75µH
R3
R4
Chip Resistor,4.7Ω, 0805, 5%
TY-OHM
R5
Chip Resistor,54.9kΩ, 0805, 1%
TY-OHM
R6
Chip Resistor, 9.1KΩ, 0805, 1%
TY-OHM
Chip Resistor, 1MΩ, 5%
TY-OHM
Chip Resistor, 2Ω, 1206, 1%
TY-OHM
R10
Chip Resistor, 510Ω, 0805, 5%
TY-OHM
R12
Chip Resistor, 1.2KΩ, 0805, 5%
TY-OHM
R13
Chip Resistor, 3Ω, 0805, 5%
TY-OHM
R14
Chip Resistor,1.3KΩ, 0805,5%
TY-OHM
Input Voltage (VAC)
STANDBY POWER
R9,R9B
Standby Power Vs Input Voltage
Standy Power (mW)
R7,R8
Typical Performance Characteristics
150
100
50
0
90
R15
Chip Resistor,11.3kΩ, 0805,1%
TY-OHM
R16
Chip Resistor,10.5KΩ, 0805, 1%
TY-OHM
R17
Chip Resistor,270KΩ, 0805, 1%
TY-OHM
R18
Chip Resistor,13KΩ, 0805, 1%
TY-OHM
R19
Chip Resistor,9.1KΩ, 0805, 1%
TY-OHM
90.00%
R20
Chip Resistor,17.8KΩ, 0805, 1%
TY-OHM
88.00%
R21
Chip Resistor,10Ω, 0805, 5%
TY-OHM
Rgate
Chip Resistor,300Ω, 0805, 5%
TY-OHM
T1
NTC
Thermistor, SC053
TY-OHM
TVS
Varistor, 10471
TY-OHM
CY1
Y capacitance, 1000pF/400V,Y1
IC3
Opto-coupler, PC817C CTR=200 SM
IC2
Voltage Regulator, TL431A, Vref=2.5V TO-92
Efficiency
86.00%
115V
84.00%
264
230V
82.00%
80.00%
25% Po
CX1
230
Efficiency Vs Po
RM8 lm=1.2mH
X capacitance,0.22µF/400V,X1,L*W*H=17.5*5.6*12mm
115
50% Po
75% Po
100% Po
Output Power
EFFICIENCY(16AWG,1M,R=0.043Ω)
SEC
Sharp
EVALUATION KITS
ST
ACT512_5V4A_DOE_Rev1.0
-16For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
ACT334 12V/0.5A UNIVERSAL CHARGER FOR DOE STANDARD
Input Voltage
Device
Average
Efficiency
Standby Power
Output Voltage
Output Power
Topology
90-264VAC
ACT334
80.50%
66mW
12V
6W
PSR flyback
Key Features
Demo Board Picture
• Patented Primary Side Regulation Technology
• Lowest total cost solution for cell phone
charger using PWM IC
• Universal input voltage range from 85 to 264
VAC
• Accurate CV (5%) and CC (10%) performance
• Adjustable up to 80kHz Switching Frequency
• Integrated Output Cord Compensation
• CV & CC correction for Input line, output DC
cord and transformer inductance variation
• No-load standby power < 0.05W
• Exceed the latest DOE average efficiency requirement
Normal size
• No Y capacitor for EMI filter
• Short circuit and over-voltage protection
• Tiny SOT23-6 package.
W*L*H=29mm*48.5mm*16mm
Schematic
Picture 8
-17For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
Bill of Materials
REF
DESCRIPTION
U1
IC, ACT334,SOT23-6
C1
Capacitor, Electrolytic, 6.8uF/400V, 10x12mm
♦
Build up
Terminal
MFTR
Windi
ng
Active-Semi.
KSC
P1
C2
Capacitor, Electrolytic, 6.8uF/400V, 10x12mm
Capacitor, Ceramic, 1000pF/500V,1206,SMD
POE
C4
Capacitor, Electrolytic,4.7uF/35V,5x11mm
KSC
C5
Capacitor, Solid, 470uF/16V, 8x12mm
Capacitor, Electrolytic, 100uF/16V, 8x12mm
KSC
C9
Capacitor, Ceramic,1000pF/50V, 0805, SMD
POE
D1-D4
Diode,Rectifier,1000V/1A,1N4007, DO-41
Good-Ark
D5,D6
Diode,Ultra Fast, FR107,1000V/1.0A, DO-41
Good-Ark
Diode, schottky, 100V/5A, SL540, DO-214AB,SMD
L1
Axial Inductor, 1.5mH, 0410,Dip
Q1
SH1
S1
P2
SH2
-->
4
Wire
Turn
s
<-1
NC
6
8
(5)
4
3
(5)
Cor
e
1
Insulation
Type
Size*QTY
Laye
r
34
2UE
W
0.2Φ*1
1
0.025*8.
5W
1
34
2UE
W
1
0.025*8.
5W
1
34
2UE
W
1
0.025*8.
5W
2
1
0.025*8.
5W
2
1
0.025*8.
5W
2
0.2Φ*1
0.2Φ*1
8
2UE
W
16
TEXE
10
1
0.15Φ*4
0.3Φ*1
2UE
W
0.25Φ*2
2UE
W
0.15Φ*1
Thick/
Wide
Lay
er
1
0.025*8.
5W
2
1
0.025*8.
5W
2
Note:1,Core and Bobbin:EE16
2,SH1 and SH2 are shielding; P1 & P2 are primary and S1 is secondary
3,Reverse the direction of bobbin when do the S1.
Vishay
♦
Amode Tech
Item
Transistor, HFE 20-25, NPN,13003,TO-126
Huawei
1
Electrical
Strength
50Hz, 1 minute, from primary and secondary
3000 Vac
PCB1
PCB, L*W*T=48.5x29x1.6mm,Cem-1,Rev:A
Jintong
2
P1 Inductance
Inductance between pins 1 and 2 at 1Vac
& 1kHz
1.43mH±%7
FR1
Wire Round Resistor,1W,10 ohm,KNP, 5%
TY-OHM
3
P1 Leakage
Inductance
Inductance between pins 1 and 2 with pins
4-3 and 8-6 shorted
75µH
R1
Chip Resistor, 22 ohm, 0603, 5%
TY-OHM
R2
Chip Resistor, 750K ohm, 1206, 5%
TY-OHM
R3
Chip Resistor, 470 ohm, 0805, 5%
TY-OHM
R4
Chip Resistor, 22 ohm, 0805, 5%
TY-OHM
R5
Chip Resistor, 75K ohm, 0805,1%
TY-OHM
R6
Chip Resistor, 12.1K ohm, 0805, 1%
TY-OHM
R7,R8
Chip Resistor, 5.1M ohm, 1206, 5%
TY-OHM
R9
Chip Resistor, 0.9 ohm, 1206,1%
TY-OHM
R10
open
TY-OHM
R11
Chip Resistor, 5.1K ohm, 0805, 5%
TY-OHM
R13
Chip Resistor, 10 ohm, 0805, 5%
TY-OHM
T1
Transformer, Lp=1.43mH, EE16
Electrical specifications
Description
Condition
Limits
Typical Performance Characteristics
Standby Power Vs Input Voltage
Standy Power (mW)
D8
2
-->
Rubcon
C6
Finish
<--
KSC
C3
Sta
rt
100
80
60
40
20
0
1
2
3
4
Input Voltage (VAC)
STANDBY POWER
Transformer
EFFICIENCY(18AWG,1.8M,R=0.08Ω)
EVALUATION KITS
ACT334_12V0.5A_DOE_Rev1.0
-18For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
ACT512 12V/0.5A UNIVERSAL ADAPTOR FOR DOE STANDARD
Input Voltage
Device
Average
Efficiency
Standby Power
Output Voltage
Output Power
Topology
90-264VAC
ACT512
82.10%
82mW
12V
6W
CCM&QR
flyback
over temperature, over/under voltage, short
winding, short current sense resistor, open loop
and overload protection.
Key Features
• Optimized CCM and advanced Quasi-Resonant
operation.
• Tiny SOT23-6 package.
• Advanced burst mode operation enables low
Demo Board Picture
standby power of 100mW and can lower than
50mW with external circuit.
• Frequency jetting and Quasi-Resonant technology to decrease EMI.
• Patented frequency foldback and ActiveQRTM
technology increases the average system efficiency compared to conventional solutions and
exceeds the latest DOE efficiency standard with
good margin.
• Integrated patented line compensation, provide
accurate OCP/OLP protection.
• Built-in Soft-Start and Fast-Start circuit to de-
Normal size
crease main external Mosfet stress, output voltage rise time and output voltage overshoot.
W*L*H=29mm*53.5mm*20.5mm
• Integrate comprehensive protection. In case of
Schematic
Picture 9
-19For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
Transformer
Bill of Materials
REF
DESCRIPTION
MFTR
IC1
IC, ACT512, SOT23-6
Active-Semi
C1
Capacitor, Electrolytic, 6.8uF/400V, 10x12mm
KSC
C2
Capacitor, Electrolytic, 6.8uF/400V,10x12mm
KSC
C3
Capacitor, Ceramic, 1000pF/500V, 0805,SMD
POE
C4
Capacitor, Electrolytic,6.8uF/50V, 5x11mm
POE
C5
Capacitor, Ceramic,1000PF/100V, 0805,SMD
POE
C6
Capacitor, Electrolytic, 470uF/16V, 6.3x8mm
KSC
C7
Capacitor, Electrolytic, 470uF/16V, 6.5x15mm
KSC
C8
Capacitor, Ceramic, 0.1uF/25V, 0805,SMD
POE
C9
Capacitor, Ceramic, 1000pF/25V, 0805,SMD
POE
C10
Capacitor, Ceramic, 10uF/35V, 0805,SMD Open
POE
CY1
Safety Y1,Capacitor,1000pF/400V,Dip
UXT
BD1
Bridge Rectifier,D1010S,1000V/1.0A,SDIP
PANJIT
D2
Fast Recovery Rectifier, RS1G,200V/1.0A, RMA
PANJIT
D3
Diode, Schottky, 100V/10A, SBR10100, TO-220
Diodes
♦
D4
Fast Recovery Rectifier, RS1M,1000V/1.0A, RMA
PANJIT
Item
Good-Ark
Axial Inductor, 1.5mH, 5*7,Dip
SoKa
L2
Axial Inductor, 3uH,0.55*5T, 5*7,Dip
SoKa
Q1
Mosfet Transistor, 2N60,TO-262
Infineon
PCB, L*W*T=53x29x1.6mm,Cem-1,Rev:A
Jintong
PCB1
F1
Fuse,1A/250V
TY-OHM
Chip Resistor, 1.0Mohm, 1206, 5%
TY-OHM
R3
Carbon Resistor, 750K ohm, 0805, 5%
TY-OHM
R4
Chip Resistor, 100 ohm, 0805, 5%
TY-OHM
R5,R9,R15
Chip Resistor, 22 ohm, 0805, 5%
TY-OHM
R6
Chip Resistor, 60.4K ohm, 0805,1%
TY-OHM
R7
Chip Resistor, 12.1K ohm, 0805, 1%
TY-OHM
R8
Chip Resistor, 3.21 ohm,1206 , 5%
TY-OHM
R10
Chip Resistor, 1.5Kohm, 0805,5%
TY-OHM
R12
Chip Resistor, 3K ohm, 0805, 5%
TY-OHM
R13
Chip Resistor, 24.3K ohm, 0805, 1%
TY-OHM
R11,R14
R1,R2
Chip Resistor, 6.19K ohm, 0805, 1%
TY-OHM
R16
Chip Resistor, 10 ohm, 0805, 5%
TY-OHM
R17
Chip Resistor, 2.2Kohm, 0805, 5%
TY-OHM
T1
Transformer, Lp=2.6mH, EE16
U2
OPOT PC817C
IC3
TL431 TO-92
Terminal
Wire
Start
Finish
Turn
s
P1
2
3
68
SH1
NC
5
0.9
S1
6
10
26
Insulation
Size*QT
Y
La
yer
Thick/
Wide
Layer
0.2Φ*1
2
0.025*11W
2
copper
10mm
1
0.025*11W
2
2UEW
0.4Φ*1
2
0.025*11W
2
Type
2UEW
P2
4
5
29
2UEW
0.2Φ*1
1
0.025*11W
2
P3
3
1
68
2UEW
0.2Φ*1
2
0.025*11W
2
SH2
core
5
3
wire
0.25Φ*1
1
Note:1,Core and Bobbin:EE16
2,SH1 and SH2 are shielding; P1,P2 & P3 are primary and S1 is secondary
3,Reverse the direction of bobbin when do the S1
Electrical specifications
Description
Condition
Limits
1
Electrical
Strength
50Hz, 1 minute, from primary and secondary
3000 Vac
2
P1 Inductance
Inductance between pins 2and 1at 1Vac &
1kHz
2.6mH±%7
3
P1 Leakage
Inductance
Inductance between2-1 with pins6-10 and 4
-5 shorted
75µH
Typical Performance Characteristics
Standby Power Vs Input Voltage
Standy Power (mW)
Diode,Ultra Fast, L4148, SMD
L1
Build up
Winding
120
100
80
60
40
20
0
90
115
230
264
Input Voltage (VAC)
STANDBY POWER
Efficiency Vs Po
90.00%
Efficiency
Dgate
♦
Sharp
80.00%
60.00%
50.00%
25% Po
ST
115V
230V
70.00%
50% Po
75% Po
100% Po
Output Power
EFFICIENCY(24AWG,1.8M,R=0.308Ω)
EVALUATION KITS
ACT512_12V0.5A_DOE_Rev1.0
-20For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
ACT411 12V/1A UNIVERSAL ADAPTOR FOR DOE STANDARD
Input Voltage
Device
Average
Efficiency
Standby Power
Output Voltage
Output Power
Topology
90-264VAC
ACT411
84.10%
90mW
12V
12W
PSR
flyback
Key Features
Demo Board Picture
• Patented primary switching regulator technology, DCM & Quasi-Resonant PWM Controller
• Lowest total cost solution for cell phone
charger using PWM IC
• Universal input voltage range from 85 to 264
VAC
• Accurate CV (5%) and CC (15%) performance
• Adjustable up to 110kHz Switching Frequency
• Integrated Output Cord Compensation
• CV & CC correction for Input line, output DC
cord and transformer inductance variation
• No-load standby power < 0.1W
• Exceed the latest DOE average efficiency re-
Normal size
quirement
W*L*H=29mm*53.5mm*20.5mm
• Short circuit and over-voltage protection
• Tiny SOT23-6 package.
Schematic
Picture 10
-21For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
Bill of Materials
♦
REF
DESCRIPTION
MFTR
U1
IC, ACT411,SOT23-6
Active-Semi.
C1
Capacitor, Electrolytic, 10uF/400V, 10x15mm
KSC
C2
Capacitor, Electrolytic, 15uF/400V, 12x15mm
KSC
C3
Capacitor, Ceramic, 1000pF/500V, 0805,SMD
POE
C4
Capacitor, Electrolytic,3.3uF/35V,5x11mm
KSC
C5,C6
Capacitor, Electrolytic, 470uF/16V, 8x11.5mm
KSC
C8
Capacitor, Ceramic, 0.1uF/25V, 0805,SMD
POE
C9
Capacitor, Ceramic, 1000pF/100V, 0805,SMD
POE
CY1
Safety Y1,Capacitor,1000pF/400V,Dip
UXT
D1-D4
Diode,Rectifier,1000V/1A,1N4007, DO-41
Good-Ark
Fast Recovery Rectifier, RS1M,1000V/1.0A, RMA
PANJIT
Fast Recovery Rectifier,RS1D,200V/1.0A,SMA
PANJIT
D7
Diode, 1N4148 SMD
PANJIT
D8
Diode, schottky, 100V/20A, SBR20100CT, TO-220
Diode
L1
Axial Inductor, 1.5mH, 5*7,Dip
SoKa
L2
Axial Inductor, 0.55*5T, 5*7,Dip
SoKa
Q1
Mosfet Transistor, 2N65,TO-220
AUK
PCB1
PCB, L*W*T=52.2x30x1.6mm,Cem-1,Rev:A
Jintong
FR1
Fuse,1A/250V
TY-OHM
R2
Carbon Resistor, 200K ohm, 1206, 5%
TY-OHM
R3
Chip Resistor, 100 ohm, 0805, 5%
TY-OHM
R4
Chip Resistor, 4.7 ohm, 0805, 5%
R5
Chip Resistor, 91K ohm, 0805,1%
TY-OHM
D5
D6
Build up
Terminal
Windi
ng
Start
Finish
S1
7
10
P2
4
5
10
P3
3
1
31
Typ
e
2UE
W
2UE
W
TEX
-E
2UE
W
2UE
W
P1
2
3
3
Cop
per
wire
SH1
SH2
core
TY-OHM
Chip Resistor, 2M ohm, 0805 , 5%
TY-OHM
R9
Chip Resistor, 1.24ohm, 1206,1%
TY-OHM
R10
Chip Resistor, 200 ohm, 0805 , 5%
TY-OHM
R11
Chip Resistor, 9.1K ohm, 0805, 5%
♦
Chip Resistor, 3K ohm, 0805 , 5%
R1,R13
Chip Resistor, 22 ohm, 0805, 5%
TY-OHM
R14
Chip Resistor, 510 ohm, 0805, 5%
TY-OHM
9
La
yer
0.25Φ*1
2
0.15Φ*3
1
0.70Φ*1
1
0.25Φ*3
1
0.25Φ*1
1
Thick/
Wide
0.025*11
W
0.025*11
W
0.025*11
W
0.025*11
W
0.025*11
W
0.18Φ*1
1
0.025*11
W
La
ye
r
2
2
2
2
2
Electrical specifications
Description
Condition
Limits
1
Electrical
Strength
50Hz, 1 minute, from primary and secondary
3000 Vac
2
P1 Inductance
Inductance between pins 2and 1at 1Vac &
1kHz
0.50mH±%7
3
P1 Leakage
Inductance
Inductance between 4 pins 5 with pins 710 shorted
75µH
Typical Performance Characteristics
Standby Power Vs Input Voltage
TY-OHM
R12
5
15
Size*QT
Y
3,Reverse the direction of bobbin when do the S1.
Standy Power mW)
Chip Resistor, 15.8K ohm, 0805, 1%
31
NC
TY-OHM
R6
100
80
60
40
20
0
90
115
230
264
Input Voltage (VAC)
TY-OHM
STANDBY POWER
Efficiency Vs Po
Transformer, Lp=0.5mH, EE19 horizontal
Efficiency
T1
5
Turns
Insulation
Note:1,Core and Bobbin:EE19
2,SH1 and SH2 are shielding; P1 & P2 are primary and S1 is secondary
Item
R7,R8
Wire
Transformer
88.00%
86.00%
84.00%
82.00%
80.00%
78.00%
76.00%
74.00%
72.00%
70.00%
68.00%
25% Po
115V
230V
50% Po
75% Po
100% Po
Output Power
EFFICIENCY ( 22AWG 1.5M )
EVALUATION KITS
ACT411_12V1A_DOE_Rev1.0
-22For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
ACT512 12V/1A UNIVERSAL ADAPTOR FOR DOE STANDARD
Input Voltage
Device
Average
Efficiency
Standby Power
Output Voltage
Output Power
Topology
90-264VAC
ACT512
84.60%
88mW
12V
12W
CCM&QR
flyback
over temperature, over/under voltage, short
winding, short current sense resistor, open loop
and overload protection.
Key Features
• Optimized CCM and advanced Quasi-Resonant
operation.
• Tiny SOT23-6 package.
• Advanced burst mode operation enables low
Demo Board Picture
standby power of 100mW and can lower than
50mW with external circuit.
• Frequency jetting and Quasi-Resonant technology to decrease EMI.
• Patented frequency foldback and ActiveQRTM
technology increases the average system efficiency compared to conventional solutions and
exceeds the latest DOE efficiency standard with
good margin.
• Integrated patented line compensation, provide
accurate OCP/OLP protection.
• Built-in Soft-Start and Fast-Start circuit to decrease main external Mosfet stress, output voltage rise time and output voltage overshoot.
Normal size
• Integrate comprehensive protection. In case of
W*L*H=41.5mm*57.5mm*25mm
Schematic
Picture 11
-23For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
Transformer
Bill of Materials
REF
IC1
DESCRIPTION
IC, ACT512, SOT23-6
MFTR
Active-Semi
C1
Capacitor, Electrolytic, 22µF/400V, 18 × 20mm
KSC
C3
Capacitor, Ceramic,1000pF/1KV,DIP
POE
C4
Capacitor, Electrolytic,4.7µF/35V,5*11mm
C5
Capacitor, Solid, 470uF/16V, 10*16mm
C6
Capacitor, Electrolytic,330uF/16V, 8*16mm
KSC
C8
Capacitor, Ceramic, 0.1µF/50V,0805,SMD
POE
C9
Capacitor, Ceramic,1000pF/100V,0805,SMD
POE
Cfb
Capacitor, Ceramic,100pF/50V,0805,SMD
POE
BD1
GBL10 2A/600V 4Pin DIP
Good-Ark
P1
1
D5
Diode, Ultra Fast, FR107,1000V/1.0A, DO-41
Good-Ark
SH1
D6
RS1M SMD
Good-Ark
D8
Diode, Schottky, 100V/30A, SBR30100, DO-220
Diode L4148 SMD
L1
CM Inductor, 30mH, UU9.8
Q1
Mosfet Transisor, 04N65, TO-220
PCB1
PCB, L*W*T =58x42x1.6mm, Cem-1, Rev:A
48
NC
2
S1
B
P2
5
Diodes
P3
Good-Ark
SH2
SoKa
Jintong
Chip Resistor,22 Ω, SMD 0805, 5%
TY-OHM
metal Resistor,100K Ω,DIP,1W,5%
TY-OHM
R3
Chip Resistor, 100Ω, 0805, 5%
TY-OHM
R4
Chip Resistor,4.7Ω, 0805, 5%
TY-OHM
R5
Chip Resistor,57.6kΩ, 0805, 1%
TY-OHM
R6
Chip Resistor, 10.7KΩ, 0805, 1%
TY-OHM
Chip Resistor, 1MΩ, 5%
TY-OHM
R9
metal Resistor, 1.82Ω, 1W, 1%
TY-OHM
R10
Chip Resistor, 510Ω, 1/4W, 5%
TY-OHM
R12
Chip Resistor, 3.3KΩ, 0805, 5%
TY-OHM
R13
Chip Resistor, 10Ω, 0805, 5%
TY-OHM
R14
Chip Resistor,3.3KΩ, 0805,5%
TY-OHM
R15
Chip Resistor,24.3kΩ, 0805,1%
TY-OHM
R16
Chip Resistor,6.19KΩ, 0805, 1%
TY-OHM
Chip Resistor,170Ω, 0805, 5%
TY-OHM
X capacitance, 0.1µF/400V,X1
NTC
Thermistor, SC053
TVS
Varistor, 10471
CY1
Y capacitance, 1000pF/400V,Y1
IC2
Opto-coupler, PC817C CTR=200 dip-4
IC3
Voltage Regulator, TL431A, Vref=2.5V TO-92
Type
La
yer
2UEW
0.15Φ*1
2
0.025*11W
0.9
copper
10mm
1
0.025*11W
A
15
TEX-E
0.65Φ*1
1
0.025*11W
2
2
16
2UEW
0.15Φ*2
1
0.025*11W
2
4
3
48
2UEW
0.15Φ*1
1
0.025*11W
2
core
2
3
wire
0.25Φ*1
1
Start
♦
Thick/
Wide
Layer
2
Electrical specifications
Item
Description
Condition
Limits
1
Electrical
Strength
50Hz, 1 minute, from primary and secondary
3000 Vac
2
P1 Inductance
Inductance between pins 1and 3 at 1Vac &
1kHz
2.4mH±%7
3
P1 Leakage
Inductance
Inductance between pins 1 and 3 with pins5
-2 and A-B shorted
75µH
Typical Performance Characteristics
Standby Power Vs Input Voltage
EE22 lm=2.4mH
CX1
Insulation
Size*QT
Y
Note:1,Core and Bobbin:EE22
2,SH1 and SH2 are shielding; P1,P2 & P3 are primary and S1 is secondary
3,Reverse the direction of bobbin when do the S1
Infineon
R1
T1
Winding
Wire
4
TY-OHM
Rgate
Terminal
Finish
Fusible, 2A/250V
R7,R8
Build up
Turn
s
F1
R2
♦
Standy Power (mW)
Dgate
KSC
Rubcon
SEC
TY-OHM
100
50
0
90
115
230
264
Input Voltage (VAC)
TY-OHM
SEC
STANDBY POWER
Sharp
Efficiency Vs Po
ST
Efficiency
90.00%
85.00%
80.00%
115V
230V
75.00%
70.00%
25% Po
50% Po
75% Po
100% Po
Output Power
EFFICIENCY(24AWG,1.8M,R=0.308Ω)
EVALUATION KITS
ACT512_12V1A_DOE_Rev1.0
-24For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
ACT513 12V2A UNIVERSAL ADAPTOR FOR DOE STANDARD
Input Voltage
Device
Average
Efficiency
Standby Power
Output Voltage
Output Power
Topology
90-264VAC
ACT513
88.22%
94mW
12V
24W
CCM&QR
flyback
over temperature, over/under voltage, short
winding, short current sense resistor, open loop
and overload protection.
Key Features
• Optimized CCM and advanced Quasi-Resonant
operation.
• Tiny SOT23-6 package.
• Advanced burst mode operation enables low
standby power of 100mW and can lower than
50mW with external circuit.
Demo Board Picture
• Frequency jetting and Quasi-Resonant technology to decrease EMI.
• Patented frequency foldback and ActiveQRTM
technology increases the average system efficiency compared to conventional solutions and
exceeds the latest DOE efficiency standard with
good margin.
• Integrated patented line compensation, provide
accurate OCP/OLP protection.
• Built-in Soft-Start and Fast-Start circuit to decrease main external mosfet stress, output voltage rise time and output voltage overshoot.
• Integrate comprehensive protection. In case of
Normal size
W*L*H=44mm*92mm*29mm
Schematic
Picture 12
-25For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
Transformer
Bill of Materials
REF
IC1
DESCRIPTION
IC, ACT513, SOT23-6
MFTR
Active-Semi
C1
Capacitor, Electrolytic,68µF/400V, 18 × 20mm
C3
Capacitor, Ceramic,1000pF/1KV,DIP
Rubycon
C4
Capacitor, Electrolytic,6.8µF/35V,5*11mm
KSC
C5
Capacitor, Electrolytic,470uF/16V,8*16mm
POE
POE
C6
Capacitor, Electrolytic470uF/16V, 8*16mm
POE
C8
Capacitor, Ceramic, 0.1µF/50V,0805,SMD
POE
C9
Capacitor, Ceramic,1000pF/100V,0805,SMD
POE
C11
Capacitor, Electrolytic470uF/16V, 8*16mm
POE
Winding
Start
Finish
Turns
Cfb
Capacitor, Ceramic,100pF/50V,0805,SMD
POE
P1
2
3
61
2UEW
BD1
GBL10 2A/600V 4Pin DIP
SH1
5
1
20
2UEW
0.2Φ*3
1
0.025*11W
2
S1
9,10
11,12
14
2UEW
0.8Φ1
1
0.025*11W
2
P2
4
5
15
2UEW
0.2Φ*4
1
0.025*11W
2
P3
3
6
61
2UEW
0.2Φ*1
1
0.025*11W
2
RS1M,1000V/1.0A,SMD
Good-Ark
D6
RS1M ,1000V/1A, SMD
Good-Ark
D8
Diode, Schottky, 60V30A, SBR3060, DO-220
Good-Ark
Diode L4148 SMD
Good-Ark
LF1
CM Inductor, 50mH, UU10.5
SoKa
LF2
CM Inductor, 3mH,
SoKa
Q1
Mosfet Transisor, 04N65, TO-220
AUK
PCB, L*W*T =93x44x1.6mm, Cem-1, Rev:A
F1
Fusible, 2A/250V
TY-OHM
Chip Resistor,22 Ω, SMD 0805, 5%
TY-OHM
R2
metal Resistor,500K Ω,DIP,1W,5%
TY-OHM
R3
Chip Resistor, 100Ω, 0805, 5%
TY-OHM
R4
Chip Resistor,4.7Ω, 0805, 5%
TY-OHM
R5
Chip Resistor,60.4kΩ, 0805, 1%
TY-OHM
R6
Chip Resistor,14KΩ, 0805, 1%
TY-OHM
Chip Resistor, 1MΩ, 5%
TY-OHM
R7,R8
R9
metal Resistor,1.4Ω, 1W, 1%
TY-OHM
R10
Chip Resistor, 1.3KΩ, 5%
TY-OHM
TY-OHM
R12
Chip Resistor, 3.3KΩ, 0805, 5%
R13
Chip Resistor, 10Ω, 0805, 5%
TY-OHM
R14
Chip Resistor,33KΩ, 0805,5%
TY-OHM
R15
Chip Resistor,24.3kΩ, 0805,1%
TY-OHM
R16
Chip Resistor,6.19KΩ, 0805, 1%
TY-OHM
Chip Resistor,470Ω, 0805, 5%
TY-OHM
Rgate
T1
♦
CX1
X capacitance, 0.1µF/400V,X1
Thermistor, SC053
TY-OHM
TVS
Varistor, 10471
TY-OHM
CY1
Y capacitance, 1000pF/400V,Y1
1
0.025*11W
2
Description
Condition
Limits
1
Electrical
Strength
50Hz, 1 minute, from primary and secondary
3000 Vac
2
P1 Inductance
Inductance between pins 11and 2at 1Vac & 1kHz
4mH±%7
3
P1 Leakage
Inductance
Inductance between pins 11 with pins1and 5-8,3-1
shorted
70µH
Standby Power Vs Input Voltage
100
50
0
90
115
230
264
STANDBY POWER
Efficiency Vs Po
SEC
Sharp
ST
90.00%
Efficiency
Opto-coupler, PC817C CTR=200 dip-4
Voltage Regulator, TL431A, Vref=2.5V TO-92
Layer
0.2Φ*1
Input Voltage (VAC)
NTC
IC3
Size*QTY
Thick/
Wide
Typical Performance Characteristics
ER28 lm=4mH
IC2
Type
Insulation
La
yer
Electrical specifications
Item
Jintong
R1
Wire
Note:1,Core and Bobbin:ER28
2,SH1 is shielding; P1,P2 & P3 are primary and S1 is secondary
3,Reverse the direction of bobbin when do the S1
Standy Power (mW)
PCB1
Build up
Terminal
Good-Ark
D5
Dgate
♦
85.00%
80.00%
115V
230V
75.00%
70.00%
25% Po
50% Po
75% Po
100% Po
Output Power
EFFICIENCY(18AWG,1.8M,R=0.08Ω)
EVALUATION KITS
ACT513_12V2A_DOE_Rev1.0
-26For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]