PSG (Charger & Adapter for ACT41X)_Rev1 - Active-Semi

Innovative Green Power Solutions
AC/DC Charger/Adapter Reference Designs
ACT41X
Rev 1.5 Jan 2014
-1-
www.active-semi.com
High Performance AC/DC Switching Power Solutions
Application Change Note
Revision History
2014 - Jan - 23
Rev 1.5
Page 4.5
Update ACT410 5V2.1A application solution transformer and parameter.
Page 6.7
Remove ACT410 5V2.4A solution, Add ACT413 5V2.4A application solution
(EPC17).
Page 8.9
Add ACT411 12V1A application solution(EE16).
Page 10.11
Add ACT412 12V0.4A shaver charger solution .
Page 4.6.8
Update changed schematic pin definition.
-2For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
AC/DC Converters – ActiveQRTM
Applications
•
•
•
AC/DC Adaptors/Chargers for Cell Phones, Cordless Phone, PDAs, E-books
Adaptors for Portable Media Player, DSCs, Set-top boxes, DVD players, records
Linear Adapter Replacements
ACT410
ACT411
ACT412
ACT413
Topology
PSR+QR
PSR+QR
PSR+QR
PSR+QR
Power
<30W
<30W
<30W
<30W
Standby Power
<100mW
<100mW
<150mW
<100mW
Package
SOT23-6
SOT23-6
SOT23-6
SOT23-6
Max Frequency
100~120kHz
100~120KHz
100~120KHz
70~80KHz
Frequency Foldback
Y
Y
Y
Y
Frequency Jittering
Y
Y
Y
Y
Auto Restart
Y
Y
Y
Y
Soft-Start
Y
Y
Y
Y
VDD OVP
Y
Y
Y
Y
Lm Compensation
Y
Y
Y
Y
CC/CP Accuracy
+/-15%
+/-15%
Constant power
+/-15%
Brown Out Protection
Y
Y
Y
Y
OTP
Y
Y
Y
Y
Short Circuit Protection
Y
Y
Y
Y
Short Winding Protection
Y
Y
Y
Y
Compensation
External
External
External
External
Open Loop Protection
Y
Y
Y
Y
c: QR is quasi-resonant.
Table of Contents
1. Low Cost ACT410 5V 2.1A Universal Adaptor(EE16).……………………..…………………..………….………………..…. 4
2. Low Cost ACT413 5V 2.4A Universal Adaptor (EPC17)......….……...…………………..………….………….…….…….… 6
3. Low Cost ACT411 12V 1A Universal Adaptor (EE16)……….……...…………………..………….………….…….……….…8
4. Low Cost ACT412 12V 0.4A shaver charger(EE16)…..………………………………………………………………………..10
Active-Semi (Shanghai) Office Contact Information
Fast Technical Support
Contact Person: Peter (Director of Product Line)
Tel: (86-21) 5108 2797#865; Mobile Phone: 135 8558 2743; E-mail box: [email protected]
Address: RM1202,Sunplus Building,No.1077 Zuchongzhi Road, Zhangjiang High Tech Park, Shanghai
201203, China
-3For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
LOW COST ACT410 5V/2.1A UNIVERSAL ADAPTOR
Input Voltage
Device
Vo
Po
Transformer
Core
Standby
Power
Efficiency
Topology
90-264VAC
ACT410
5V
10.5W
EFD15
90mW
77.56%
QR flyback
Key Features
Demo Board Picture
• Advanced Quasi-Resonant mode operation.
• Advanced burst mode operation enables low
standby power of 90mW .
• Frequency jittering and Quasi-Resonant technology to decrease EMI.
• Patented frequency foldback and ActiveQRTM
technology increases the average system efficiency and exceeds the latest ES2.0 efficiency
standard with good margin.
• Integrated patented line and inductance compensation, provide accurate CC
• Integrate comprehensive protection. In case of
over temperature, over/under voltage, short
winding, short current sense resistor, open
loop and overload protection.
Mini size
• Tiny SOT23-6 package.
W*L*H=28mm*40mm*16mm
Schematic
Picture 1
-4For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
Bill of Materials
REF
DESCRIPTION
MFTR
U1
IC, ACT410,SOT23-6
Active-Semi.
C1,C2
Capacitor, Electrolytic, 10uF/400V, 10x15mm
KSC
C3
Capacitor, Ceramic, 1000pF/500V, 0805,SMD
POE
C4
Capacitor, Electrolytic,6.8uF/35V,5x11mm
KSC
♦
Build up
Terminal
Capacitor, Electrolytic, 820µF/6.3V, 6.3 × 16mm
KSC
C8
Capacitor, Ceramic, 0.1uF/25V, 0805,SMD
POE
C9
Capacitor, Ceramic, 1000pF/50V, 0805,SMD
POE
CY1
Capacitor, Ceramic, 220pF/50V, 0805,SMD
Safety Y1,Capacitor,1000pF/400V,Dip
POE
UXT
BD1
Bridge Rectifier,D1010S,1000V/1.0A,SDIP
PANJIT
D2,D3
Fast Recovery Rectifier, RS1M,1000V/1.0A, RMA
PANJIT
D4
Diode, Schottky, 45V/10A, S10U45S, SMD
Diodes
D5
Diode, 1N4148 SMD
PANJIT
L1
Axial Inductor, 1.5mH, 5*7,Dip
SoKa
L2
Axial Inductor, 0.55*5T, 5*7,Dip
SoKa
Q1
Mosfet Transistor, 2N60,TO-251
Infineon
PCB1
PCB, L*W*T=40x28x1.6mm,Cem-1,Rev:A
Jintong
FR1
Fuse,1A/250V
TY-OHM
R1
Chip Resistor, 51 ohm, 0805, 5%
TY-OHM
R2
Carbon Resistor, 200K ohm, 1206, 5%
TY-OHM
R3,R10
Chip Resistor, 100 ohm, 0805, 5%
TY-OHM
R4,R13
Chip Resistor, 22 ohm, 0805, 5%
Chip Resistor, 51.1K ohm, 0805,1%
TY-OHM
R6
Chip Resistor, 9.31K ohm, 0805, 1%
TY-OHM
R7,R8
Chip Resistor, 1.5M ohm, 0805 , 5%
TY-OHM
R9
Chip Resistor, 1.24ohm, 1206,1%
TY-OHM
R11
Chip Resistor, 1.2K ohm, 0805, 5%
R12
Chip Resistor, 3K ohm, 0805 , 5%
R14
Chip Resistor, 100K ohm, 0805, 5%
TY-OHM
R15
Chip Resistor, 470 ohm, 0805, 5%
TY-OHM
T1
Transformer, Lp=0.41mH, EED15
Not defined
0.20Φ*1
0.025
*10W
1
0.025*11W
1
Copper
1
0.025*11W
2
Finish
Turn
s
P1
2
3
34
2UEW
SH1
4
NC
0.9
Type
Insulation
Thick/
La
Wide
yer
S1
B-7
A-10
5
TEX-E
0.55Φ*2
1
0.025*11W
2
P2
3
1
34
2UEW
0.20Φ*1
1
0.025*11W
1
SH2
4
NC
16
2UEW
0.15Φ*3
1
0.025*11W
2
P3
5
4
14
0.25Φ*1
1
0.025*11W
2
SH3
4
core
3
2UEW
Coopper
wire
0.1Φ*1
1
0.025*11W
2
Note:1,Core and Bobbin:EFD15
2,SH1,SH2,SH3 are shielding; P1,P2,P3 are primary and S1 is secondary
3,Reverse the direction of bobbin when do the S1
♦
Item
Electrical specifications
Description
Condition
Limits
1
Electrical
Strength
50Hz, 1 minute, from primary and secondary
3000 Vac
2
P1 Inductance
Inductance between pins 2and 1at 1Vac &
1kHz
0.41mH±%7
3
P1 Leakage
Inductance
Inductance between 2 pins 1 with pins 4-5
and A-B shorted
75µH
Typical Performance Characteristics
Standby Power Vs Input Voltage
TY-OHM
R5
La
yer
Start
Standy Power (mW)
C10
Wire
Size*QT
Y
Winding
140.00
120.00
100.00
80.00
60.00
40.00
20.00
0.00
85
115
230
264
Input Voltage (VAC)
TY-OHM
STANDBY POWER
TY-OHM
Efficiency Vs Po
84.00%
Efficiency
C6,C7
80.00%
76.00%
72.00%
115V
230V
68.00%
64.00%
60.00%
25% Po
50% Po
75% Po
100% Po
Output Power
EFFICIENCY
Transformer
EVALUATION KITS
ACT410_5V2.1A_Rev1.1
-5For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
LOW COST ACT413 5V/2.4A UNIVERSAL ADAPTOR
Input Voltage
Device
Vo
Po
Transformer
Core
Standby
Power
Efficiency
Topology
90-264VAC
ACT413
5V
12W
EPC17
80mW
78.44%
QR flyback
Key Features
Demo Board Picture
• Advanced Quasi-Resonant mode operation.
• Advanced burst mode operation enables low
standby power of 80mW .
• Frequency jittering and Quasi-Resonant technology to decrease EMI.
• Patented frequency foldback and ActiveQRTM
technology increases the average system efficiency and exceeds the latest ES2.0 efficiency
standard with good margin.
• Integrated patented line and inductance compensation, provide accurate CC
• Integrate comprehensive protection. In case of
over temperature, over/under voltage, short
winding, short current sense resistor, open
loop and overload protection.
Normal size
• Tiny SOT23-6 package.
W*L*H=33mm*52mm*16mm
Schematic
Picture 2
-6For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
Bill of Materials
REF
♦
DESCRIPTION
Terminal
MFTR
U1
IC, ACT413,SOT23-6
Active-Semi.
C1
Capacitor, Electrolytic, 10uF/400V, 10x16mm
KSC
Build up
Winding
Start
Finish
Turn
s
Type
Wire
Size*QT
Y
La
yer
Insulation
Thick/
Wide
Layer
P1
2
E
38
2UEW
0.025*11W
4
NC
0.9
Copper
0.20Φ*1
0.025
*10W
1
SH1
1
0.025*11W
1
2
S1
B-7
A-10
6
TEX-E
0.55Φ*2
1
0.025*11W
2
C2
Capacitor, Electrolytic, 10uF/400V, 10x16mm
KSC
P2
E
1
38
2UEW
0.20Φ*1
1
0.025*11W
1
C3
Capacitor, Ceramic, 1000pF/500V, 0805,SMD
POE
SH2
4
NC
16
2UEW
0.15Φ*3
1
0.025*11W
2
C4
Capacitor, Electrolytic,6.8uF/50V,5x11mm
KSC
P3
3
4
17
0.25Φ*1
1
0.025*11W
2
SH3
4
core
3
2UEW
Coopper wire
0.1Φ*1
1
0.025*11W
2
C6,C7
Capacitor, Solid, 820uF/6.3V, 8x12mm
KSC
C8
Capacitor, Ceramic, 0.1uF/25V, 0805,SMD
POE
Note:1,Core and Bobbin:EPC17
2,SH1,SH2,SH3 are shielding; P1,P2,P3 are primary and S1 is secondary
3,Reverse the direction of bobbin when do the S1
C9
Capacitor, Ceramic, 1000pF/50V, 0805,SMD
POE
C10
Capacitor, Ceramic, 220pF/50V, 0805,SMD
POE
CY1
Safety Y1,Capacitor,1000pF/400V,Dip
UXT
BD1
Diode,Rectifier,1000V/1A,MB6S, SOT-4
Good-Ark
D2,3
Fast Recovery Rectifier, RS1M,1000V/1.0A, SMA
PANJIT
1
Electrical
Strength
50Hz, 1 minute, from primary and secondary
3000 Vac
D4
Diode, schottky, SB1045S, 10A/45V, SMA
Diodes
2
P1 Inductance
Inductance between pins 2and 1at 1Vac & 1kHz
0.56mH±%7
D5
Diode, 1N4148 SMD
PANJIT
3
CM Inductor, 22mH, EE01,Dip
SoKa
P1 Leakage
Inductance
Inductance between 2 pins 1 with pins 3-4 and A-B
shorted
75µH
L1
Q1
Mosfet Transistor, 4N60,TO-220
Infineon
PCB1
PCB, L*W*T=52x33x1.6mm,Cem-1,Rev:A
Jintong
FR1
Fuse,1A/250V
TY-OHM
R1
Chip Resistor, 51 ohm, 0805, 5%
TY-OHM
R2
Carbon Resistor, 200K ohm, 1206, 5%
TY-OHM
R3,15
Chip Resistor, 100 ohm, 0805, 5%
TY-OHM
R4,13
Chip Resistor, 22 ohm, 0805, 5%
TY-OHM
R5
Chip Resistor, 51.1K ohm, 0805,1%
TY-OHM
R6
Chip Resistor, 9.31K ohm, 0805, 1%
TY-OHM
R7,R8
Chip Resistor, 1.5M ohm, 0805 , 5%
TY-OHM
R9
Chip Resistor, 1ohm, 1206,1%
TY-OHM
R10
Chip Resistor, 510ohm, 0805 , 5%
TY-OHM
R11
Chip Resistor, 1.2K ohm, 0805, 5%
TY-OHM
R12
NC
R14
Chip Resistor, 100K ohm, 0805, 5%
TY-OHM
T1
Transformer, Lp=0.56mH, EPC17
Not defined
♦
Item
Electrical specifications
Description
Condition
Limits
Typical Performance Characteristics
Standy Power mW)
Standby Power Vs Input Voltage
100
80
60
40
20
0
90
115
230
264
Input Voltage (VAC)
STANDBY POWER
Efficiency Vs Po
Efficiency
80.00%
70.00%
115V
60.00%
230V
50.00%
40.00%
Transformer
25% Po
50% Po
75% Po
100% Po
Output Power
EFFICIENCY
EVALUATION KITS
ACT413_5V2.4A_Rev1.1
-7For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
LOW COST ACT411 12V/1A UNIVERSAL ADAPTOR
Input Voltage
Device
Vo
Po
Transformer
Core
Standby
Power
Efficiency
Topology
90-264VAC
ACT411
12V
12W
EE16
90mW
82%
QR flyback
Key Features
Demo Board Picture
• Advanced Quasi-Resonant mode operation.
• Advanced burst mode operation enables low
standby power of 90mW .
• Frequency jittering and Quasi-Resonant technology to decrease EMI.
• Patented frequency foldback and ActiveQRTM
technology increases the average system efficiency and exceeds the latest ES2.0 efficiency
standard with good margin.
• Integrated patented line and inductance compensation, provide accurate CC
• Integrate comprehensive protection. In case of
over temperature, over/under voltage, short
winding, short current sense resistor, open
loop and overload protection.
Mini size
• Tiny SOT23-6 package.
W*L*H=30mm*52mm*16mm
Schematic
Picture 3
-8For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
Bill of Materials
REF
DESCRIPTION
MFTR
U1
IC, ACT411,SOT23-6
Active-Semi.
C1
Capacitor, Electrolytic, 10uF/400V, 10x16mm
KSC
C2
Capacitor, Electrolytic, 10uF/400V, 10x16mm
KSC
C3
Capacitor, Ceramic, 1000pF/500V, 0805,SMD
POE
C4
Capacitor, Electrolytic,6.8uF/50V,5x11mm
KSC
♦
Terminal
C5,C6
Capacitor, Electrolytic, 470uF/16V, 8x11.5mm
KSC
Winding
C8
Capacitor, Ceramic, 0.1uF/25V, 0805,SMD
POE
P1
C9
Capacitor, Ceramic, 1000pF/100V, 0805,SMD
Build up
Start
SH1
POE
S1
C10
Capacitor, Ceramic, 220pF/25V, 0805,SMD
POE
CY1
Safety Y1,Capacitor,1000pF/400V,Dip
UXT
D1-D4
Diode,Rectifier,1000V/1A,1N4007, DO-41
Good-Ark
D5
Fast Recovery Rectifier, RS1M,1000V/1.0A, SMA
PANJIT
D6
Fast Recovery Rectifier,RS1A,200V/1.0A,SMA
PANJIT
D7
Diode, 1N4148 SMD
PANJIT
D8
Diode, schottky, 100V/5A, SB5100, DO-201AB
Diodes
Wire
Finish
2
3
5
NC
B-7
A-10
Turn
s
La
yer
0.21Φ*1
0.025
*10W
1
0.025*11W
Copper
1
0.025*11W
2
TEX-E
0.5Φ*1
1
0.025*11W
2
Type
32
2UEW
0.9
11
Insulation
Size*QT
Y
Thick/
Wide
Lay
er
1
P2
3
1
32
2UEW
0.21Φ*1
1
0.025*11W
1
SH2
5
NC
13
2UEW
0.15Φ*3
1
0.025*11W
2
P3
4
5
12
0.21Φ*2
1
0.025*11W
2
SH3
5
core
3
2UEW
Coopper wire
0.1Φ*1
1
0.025*11W
2
Note:1,Core and Bobbin:EE16
2,SH1,SH2 and SH3 are shielding; P1,P2,P3 are primary and S1 is secondary
3,Reverse the direction of bobbin when do the S1
♦
Electrical specifications
Item
Description
Condition
Limits
L1
Axial Inductor, 1.5mH, 5*7,Dip
SoKa
R16
SMD Inductor, 2.2μH, 0805
SoKa
1
Electrical
Strength
50Hz, 1 minute, from primary and secondary
3000 Vac
Q1
Mosfet Transistor, 4N60,TO-220
Infineon
2
P1 Inductance
Inductance between pins 2and 1at 1Vac & 1kHz
0.39mH±%7
PCB1
PCB, L*W*T=52x30x1.6mm,Cem-1,Rev:A
Jintong
3
Fuse,1A/250V
TY-OHM
P1 Leakage
Inductance
Inductance between 2 pins 1 with pins 4-5 and A-B
shorted
75µH
FR1
R2
Carbon Resistor, 200K ohm, 1206, 5%
TY-OHM
R3,15
Chip Resistor, 100 ohm, 0805, 5%
TY-OHM
R1
Chip Resistor, 51 ohm, 0805, 5%
TY-OHM
R5
Chip Resistor, 53.6K ohm, 0805,1%
TY-OHM
R6
Chip Resistor, 9.31K ohm, 0805, 1%
TY-OHM
R7,R8
Chip Resistor, 1.5M ohm, 0805 , 5%
TY-OHM
Typical Performance Characteristics
Chip Resistor, 1ohm, 1206,1%
TY-OHM
Chip Resistor, 3K ohm, 0805, 5%
TY-OHM
R11
Chip Resistor, 4.7K ohm, 0805, 5%
TY-OHM
R4,R13
Chip Resistor, 22 ohm, 0805 , 5%
TY-OHM
R14
Chip Resistor, 100K ohm, 0805, 5%
TY-OHM
T1
Transformer, Lp=0.39mH, EE16
Not defined
100
80
60
40
20
0
90
115
230
264
Input Voltage (VAC)
STANDBY POWER
Efficiency Vs Po
Efficiency
R9
R12
Standy Power mW)
Standby Power Vs Input Voltage
88.00%
86.00%
84.00%
82.00%
80.00%
78.00%
76.00%
74.00%
72.00%
70.00%
68.00%
25% Po
115V
230V
50% Po
75% Po
100% Po
Output Power
EFFICIENCY
Transformer
EVALUATION KITS
ACT411_12V1A_Rev1.1
-9For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
LOW COST ACT412 12V/0.4A SHAVER CHARGER
Input Voltage
Device
Vo
Po
Transformer
Core
Standby
Power
Efficiency
Topology
90-264VAC
ACT412
12V
6W
EE16
94mW
77%
QR flyback
Key Features
Demo Board Picture
• Constant power mode protection for small
power motor application
• Advanced Quasi-Resonant mode operation.
• Advanced burst mode operation enables low
standby power
• Frequency jittering and Quasi-Resonant technology to decrease EMI.
• Patented frequency foldback and ActiveQRTM
technology increases the average system efficiency and exceeds the latest ES2.0 efficiency
standard with good margin.
• Integrated patented line compensation
• Integrate comprehensive protection. In case of
over temperature, over/under voltage, short
winding, short current sense resistor, open
loop and overload protection.
Mini size
W*L*H=30mm*52mm*16mm
Schematic
Picture 4
-10For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]
High Performance AC/DC Switching Power Solutions
Bill of Materials
REF
DESCRIPTION
MFTR
U1
IC, ACT412,SOT23-6
Active-Semi.
C1,C2
Capacitor, Electrolytic, 6.8uF/400V, 10x12mm
KSC
C3
Capacitor, Ceramic, 1000pF/500V, 0805,SMD
POE
C4
Capacitor, Electrolytic,4.7uF/35V,5x11mm
KSC
C5,C6
Capacitor, Electrolytic, 330uF/16V, 8x11.5mm
KSC
C8
Capacitor, Ceramic, 0.1uF/25V, 0805,SMD
POE
C9
Capacitor, Ceramic, 1000pF/100V, 0805,SMD
POE
♦
Build up
Winding
Start
Terminal
P1
SH1
C10
Capacitor, Ceramic, 100pF/25V, 0805,SMD
POE
CY1
Safety Y1,Capacitor,1000pF/400V,Dip
INC
D1-D4
D5
D6
Diode,Rectifier,1000V/1A,1N4007, DO-41
Good-Ark
Fast Recovery Rectifier, RS1M,1000V/1.0A, RMA
PANJIT
Fast Recovery Rectifier,RS1D,200V/1.0A,SMA
PANJIT
D7
NC
D8
Diode, schottky, 100V/2A, SB2100, DO-41
S1
Wire
Turn
s
Finish
2
3
5
NC
32
B-7
A-10
La
yer
0.21Φ*1
0.025
*10W
1
0.025*11W
Copper
1
0.025*11W
2
TEX-E
0.45Φ*1
1
0.025*11W
2
1
2UEW
0.9
12
Insulation
Size*QT
Y
Type
Thick/
Wide
Lay
er
1
P2
3
1
32
2UEW
0.21Φ*1
1
0.025*11W
SH2
5
NC
13
2UEW
0.15Φ*3
1
0.025*11W
2
P3
4
5
17
0.2Φ*2
1
0.025*11W
2
SH3
5
core
3
2UEW
Coopper wire
0.1Φ*1
1
0.025*11W
2
Note:1,Core and Bobbin:EE16
2,SH1,SH2 and SH3 are shielding; P1,P2,P3 are primary and S1 is secondary
3,Reverse the direction of bobbin when do the S1
♦
Good-Ark
Item
Electrical specifications
Description
Condition
Limits
L1
Axial Inductor, 1.5mH, 5*7,Dip
SoKa
L2
Axial Inductor, 3uH, 0.55*5T, 5*7,Dip
SoKa
1
Electrical
Strength
50Hz, 1 minute, from primary and secondary
3000 Vac
Q1
Mosfet Transistor, 4N60,TO-220
Infineon
2
P1 Inductance
Inductance between pins 2and 1at 1Vac & 1kHz
0.45mH±%7
PCB1
PCB, L*W*T=52.2x30x1.6mm,Cem-1,Rev:A
Jintong
3
Fuse,1A/250V
TY-OHM
P1 Leakage
Inductance
Inductance between 2 pins 1 with pins 4-5 and A-B
shorted
75µH
FR1
R1
Chip Resistor, 51 ohm, 0805, 5%
R2
Carbon Resistor, 750K ohm, 1206, 5%
TY-OHM
R3
Chip Resistor, 100 ohm, 0805, 5%
TY-OHM
R4,R13
Chip Resistor, 22 ohm, 0805, 5%
R5
Chip Resistor, 45.3K ohm, 0805,1%
TY-OHM
R6
Chip Resistor, 6.9K ohm, 0805, 1%
TY-OHM
TY-OHM
Typical Performance Characteristics
V-I Characteristic Vs Vin(25℃)
TY-OHM
R9
Chip Resistor, 0.75ohm, 1206,1%
R10
NC
R11
Chip Resistor, 6.8K ohm, 0805, 5%
R12
Chip Resistor, 3K ohm, 0805 , 5%
TY-OHM
R14
Chip Resistor, 100K ohm, 0805 , 5%
TY-OHM
R15
Chip Resistor, 0 ohm, 0805, 5%
R16
NC
R17
Chip Resistor, 390 ohm, 0805, 5%
T1
Transformer, Lp=0.45mH, EE16
Output Voltage(V)
Chip Resistor, 1.5M ohm, 0805 , 5%
16.00
TY-OHM
90V
14.00
12.00
115V
10.00
230V
8.00
264V
6.00
High limit
4.00
2.00
Low limit
0.00
0
300
600
900
1200
Output Current(mA)
TY-OHM
CCCV VURVE
Efficiency Vs Po
TY-OHM
80.00%
Efficiency
R7,R8
TY-OHM
TY-OHM
70.00%
115V
60.00%
230V
50.00%
40.00%
25% Po
50% Po
75% Po
100% Po
Output Power
EFFICIENCY
Transformer
EVALUATION KITS
ACT412_12V0.4A_Rev1.0
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