Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT41X Rev 1.5 Jan 2014 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History 2014 - Jan - 23 Rev 1.5 Page 4.5 Update ACT410 5V2.1A application solution transformer and parameter. Page 6.7 Remove ACT410 5V2.4A solution, Add ACT413 5V2.4A application solution (EPC17). Page 8.9 Add ACT411 12V1A application solution(EE16). Page 10.11 Add ACT412 12V0.4A shaver charger solution . Page 4.6.8 Update changed schematic pin definition. -2For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions AC/DC Converters – ActiveQRTM Applications • • • AC/DC Adaptors/Chargers for Cell Phones, Cordless Phone, PDAs, E-books Adaptors for Portable Media Player, DSCs, Set-top boxes, DVD players, records Linear Adapter Replacements ACT410 ACT411 ACT412 ACT413 Topology PSR+QR PSR+QR PSR+QR PSR+QR Power <30W <30W <30W <30W Standby Power <100mW <100mW <150mW <100mW Package SOT23-6 SOT23-6 SOT23-6 SOT23-6 Max Frequency 100~120kHz 100~120KHz 100~120KHz 70~80KHz Frequency Foldback Y Y Y Y Frequency Jittering Y Y Y Y Auto Restart Y Y Y Y Soft-Start Y Y Y Y VDD OVP Y Y Y Y Lm Compensation Y Y Y Y CC/CP Accuracy +/-15% +/-15% Constant power +/-15% Brown Out Protection Y Y Y Y OTP Y Y Y Y Short Circuit Protection Y Y Y Y Short Winding Protection Y Y Y Y Compensation External External External External Open Loop Protection Y Y Y Y c: QR is quasi-resonant. Table of Contents 1. Low Cost ACT410 5V 2.1A Universal Adaptor(EE16).……………………..…………………..………….………………..…. 4 2. Low Cost ACT413 5V 2.4A Universal Adaptor (EPC17)......….……...…………………..………….………….…….…….… 6 3. Low Cost ACT411 12V 1A Universal Adaptor (EE16)……….……...…………………..………….………….…….……….…8 4. Low Cost ACT412 12V 0.4A shaver charger(EE16)…..………………………………………………………………………..10 Active-Semi (Shanghai) Office Contact Information Fast Technical Support Contact Person: Peter (Director of Product Line) Tel: (86-21) 5108 2797#865; Mobile Phone: 135 8558 2743; E-mail box: [email protected]. Address: RM1202,Sunplus Building,No.1077 Zuchongzhi Road, Zhangjiang High Tech Park, Shanghai 201203, China -3For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions LOW COST ACT410 5V/2.1A UNIVERSAL ADAPTOR Input Voltage Device Vo Po Transformer Core Standby Power Efficiency Topology 90-264VAC ACT410 5V 10.5W EFD15 90mW 77.56% QR flyback Key Features Demo Board Picture • Advanced Quasi-Resonant mode operation. • Advanced burst mode operation enables low standby power of 90mW . • Frequency jittering and Quasi-Resonant technology to decrease EMI. • Patented frequency foldback and ActiveQRTM technology increases the average system efficiency and exceeds the latest ES2.0 efficiency standard with good margin. • Integrated patented line and inductance compensation, provide accurate CC • Integrate comprehensive protection. In case of over temperature, over/under voltage, short winding, short current sense resistor, open loop and overload protection. Mini size • Tiny SOT23-6 package. W*L*H=28mm*40mm*16mm Schematic Picture 1 -4For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions Bill of Materials REF DESCRIPTION MFTR U1 IC, ACT410,SOT23-6 Active-Semi. C1,C2 Capacitor, Electrolytic, 10uF/400V, 10x15mm KSC C3 Capacitor, Ceramic, 1000pF/500V, 0805,SMD POE C4 Capacitor, Electrolytic,6.8uF/35V,5x11mm KSC ♦ Build up Terminal Capacitor, Electrolytic, 820µF/6.3V, 6.3 × 16mm KSC C8 Capacitor, Ceramic, 0.1uF/25V, 0805,SMD POE C9 Capacitor, Ceramic, 1000pF/50V, 0805,SMD POE CY1 Capacitor, Ceramic, 220pF/50V, 0805,SMD Safety Y1,Capacitor,1000pF/400V,Dip POE UXT BD1 Bridge Rectifier,D1010S,1000V/1.0A,SDIP PANJIT D2,D3 Fast Recovery Rectifier, RS1M,1000V/1.0A, RMA PANJIT D4 Diode, Schottky, 45V/10A, S10U45S, SMD Diodes D5 Diode, 1N4148 SMD PANJIT L1 Axial Inductor, 1.5mH, 5*7,Dip SoKa L2 Axial Inductor, 0.55*5T, 5*7,Dip SoKa Q1 Mosfet Transistor, 2N60,TO-251 Infineon PCB1 PCB, L*W*T=40x28x1.6mm,Cem-1,Rev:A Jintong FR1 Fuse,1A/250V TY-OHM R1 Chip Resistor, 51 ohm, 0805, 5% TY-OHM R2 Carbon Resistor, 200K ohm, 1206, 5% TY-OHM R3,R10 Chip Resistor, 100 ohm, 0805, 5% TY-OHM R4,R13 Chip Resistor, 22 ohm, 0805, 5% Chip Resistor, 51.1K ohm, 0805,1% TY-OHM R6 Chip Resistor, 9.31K ohm, 0805, 1% TY-OHM R7,R8 Chip Resistor, 1.5M ohm, 0805 , 5% TY-OHM R9 Chip Resistor, 1.24ohm, 1206,1% TY-OHM R11 Chip Resistor, 1.2K ohm, 0805, 5% R12 Chip Resistor, 3K ohm, 0805 , 5% R14 Chip Resistor, 100K ohm, 0805, 5% TY-OHM R15 Chip Resistor, 470 ohm, 0805, 5% TY-OHM T1 Transformer, Lp=0.41mH, EED15 Not defined 0.20Φ*1 0.025 *10W 1 0.025*11W 1 Copper 1 0.025*11W 2 Finish Turn s P1 2 3 34 2UEW SH1 4 NC 0.9 Type Insulation Thick/ La Wide yer S1 B-7 A-10 5 TEX-E 0.55Φ*2 1 0.025*11W 2 P2 3 1 34 2UEW 0.20Φ*1 1 0.025*11W 1 SH2 4 NC 16 2UEW 0.15Φ*3 1 0.025*11W 2 P3 5 4 14 0.25Φ*1 1 0.025*11W 2 SH3 4 core 3 2UEW Coopper wire 0.1Φ*1 1 0.025*11W 2 Note:1,Core and Bobbin:EFD15 2,SH1,SH2,SH3 are shielding; P1,P2,P3 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1 ♦ Item Electrical specifications Description Condition Limits 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac 2 P1 Inductance Inductance between pins 2and 1at 1Vac & 1kHz 0.41mH±%7 3 P1 Leakage Inductance Inductance between 2 pins 1 with pins 4-5 and A-B shorted 75µH Typical Performance Characteristics Standby Power Vs Input Voltage TY-OHM R5 La yer Start Standy Power (mW) C10 Wire Size*QT Y Winding 140.00 120.00 100.00 80.00 60.00 40.00 20.00 0.00 85 115 230 264 Input Voltage (VAC) TY-OHM STANDBY POWER TY-OHM Efficiency Vs Po 84.00% Efficiency C6,C7 80.00% 76.00% 72.00% 115V 230V 68.00% 64.00% 60.00% 25% Po 50% Po 75% Po 100% Po Output Power EFFICIENCY Transformer EVALUATION KITS ACT410_5V2.1A_Rev1.1 -5For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions LOW COST ACT413 5V/2.4A UNIVERSAL ADAPTOR Input Voltage Device Vo Po Transformer Core Standby Power Efficiency Topology 90-264VAC ACT413 5V 12W EPC17 80mW 78.44% QR flyback Key Features Demo Board Picture • Advanced Quasi-Resonant mode operation. • Advanced burst mode operation enables low standby power of 80mW . • Frequency jittering and Quasi-Resonant technology to decrease EMI. • Patented frequency foldback and ActiveQRTM technology increases the average system efficiency and exceeds the latest ES2.0 efficiency standard with good margin. • Integrated patented line and inductance compensation, provide accurate CC • Integrate comprehensive protection. In case of over temperature, over/under voltage, short winding, short current sense resistor, open loop and overload protection. Normal size • Tiny SOT23-6 package. W*L*H=33mm*52mm*16mm Schematic Picture 2 -6For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions Bill of Materials REF ♦ DESCRIPTION Terminal MFTR U1 IC, ACT413,SOT23-6 Active-Semi. C1 Capacitor, Electrolytic, 10uF/400V, 10x16mm KSC Build up Winding Start Finish Turn s Type Wire Size*QT Y La yer Insulation Thick/ Wide Layer P1 2 E 38 2UEW 0.025*11W 4 NC 0.9 Copper 0.20Φ*1 0.025 *10W 1 SH1 1 0.025*11W 1 2 S1 B-7 A-10 6 TEX-E 0.55Φ*2 1 0.025*11W 2 C2 Capacitor, Electrolytic, 10uF/400V, 10x16mm KSC P2 E 1 38 2UEW 0.20Φ*1 1 0.025*11W 1 C3 Capacitor, Ceramic, 1000pF/500V, 0805,SMD POE SH2 4 NC 16 2UEW 0.15Φ*3 1 0.025*11W 2 C4 Capacitor, Electrolytic,6.8uF/50V,5x11mm KSC P3 3 4 17 0.25Φ*1 1 0.025*11W 2 SH3 4 core 3 2UEW Coopper wire 0.1Φ*1 1 0.025*11W 2 C6,C7 Capacitor, Solid, 820uF/6.3V, 8x12mm KSC C8 Capacitor, Ceramic, 0.1uF/25V, 0805,SMD POE Note:1,Core and Bobbin:EPC17 2,SH1,SH2,SH3 are shielding; P1,P2,P3 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1 C9 Capacitor, Ceramic, 1000pF/50V, 0805,SMD POE C10 Capacitor, Ceramic, 220pF/50V, 0805,SMD POE CY1 Safety Y1,Capacitor,1000pF/400V,Dip UXT BD1 Diode,Rectifier,1000V/1A,MB6S, SOT-4 Good-Ark D2,3 Fast Recovery Rectifier, RS1M,1000V/1.0A, SMA PANJIT 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac D4 Diode, schottky, SB1045S, 10A/45V, SMA Diodes 2 P1 Inductance Inductance between pins 2and 1at 1Vac & 1kHz 0.56mH±%7 D5 Diode, 1N4148 SMD PANJIT 3 CM Inductor, 22mH, EE01,Dip SoKa P1 Leakage Inductance Inductance between 2 pins 1 with pins 3-4 and A-B shorted 75µH L1 Q1 Mosfet Transistor, 4N60,TO-220 Infineon PCB1 PCB, L*W*T=52x33x1.6mm,Cem-1,Rev:A Jintong FR1 Fuse,1A/250V TY-OHM R1 Chip Resistor, 51 ohm, 0805, 5% TY-OHM R2 Carbon Resistor, 200K ohm, 1206, 5% TY-OHM R3,15 Chip Resistor, 100 ohm, 0805, 5% TY-OHM R4,13 Chip Resistor, 22 ohm, 0805, 5% TY-OHM R5 Chip Resistor, 51.1K ohm, 0805,1% TY-OHM R6 Chip Resistor, 9.31K ohm, 0805, 1% TY-OHM R7,R8 Chip Resistor, 1.5M ohm, 0805 , 5% TY-OHM R9 Chip Resistor, 1ohm, 1206,1% TY-OHM R10 Chip Resistor, 510ohm, 0805 , 5% TY-OHM R11 Chip Resistor, 1.2K ohm, 0805, 5% TY-OHM R12 NC R14 Chip Resistor, 100K ohm, 0805, 5% TY-OHM T1 Transformer, Lp=0.56mH, EPC17 Not defined ♦ Item Electrical specifications Description Condition Limits Typical Performance Characteristics Standy Power mW) Standby Power Vs Input Voltage 100 80 60 40 20 0 90 115 230 264 Input Voltage (VAC) STANDBY POWER Efficiency Vs Po Efficiency 80.00% 70.00% 115V 60.00% 230V 50.00% 40.00% Transformer 25% Po 50% Po 75% Po 100% Po Output Power EFFICIENCY EVALUATION KITS ACT413_5V2.4A_Rev1.1 -7For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions LOW COST ACT411 12V/1A UNIVERSAL ADAPTOR Input Voltage Device Vo Po Transformer Core Standby Power Efficiency Topology 90-264VAC ACT411 12V 12W EE16 90mW 82% QR flyback Key Features Demo Board Picture • Advanced Quasi-Resonant mode operation. • Advanced burst mode operation enables low standby power of 90mW . • Frequency jittering and Quasi-Resonant technology to decrease EMI. • Patented frequency foldback and ActiveQRTM technology increases the average system efficiency and exceeds the latest ES2.0 efficiency standard with good margin. • Integrated patented line and inductance compensation, provide accurate CC • Integrate comprehensive protection. In case of over temperature, over/under voltage, short winding, short current sense resistor, open loop and overload protection. Mini size • Tiny SOT23-6 package. W*L*H=30mm*52mm*16mm Schematic Picture 3 -8For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions Bill of Materials REF DESCRIPTION MFTR U1 IC, ACT411,SOT23-6 Active-Semi. C1 Capacitor, Electrolytic, 10uF/400V, 10x16mm KSC C2 Capacitor, Electrolytic, 10uF/400V, 10x16mm KSC C3 Capacitor, Ceramic, 1000pF/500V, 0805,SMD POE C4 Capacitor, Electrolytic,6.8uF/50V,5x11mm KSC ♦ Terminal C5,C6 Capacitor, Electrolytic, 470uF/16V, 8x11.5mm KSC Winding C8 Capacitor, Ceramic, 0.1uF/25V, 0805,SMD POE P1 C9 Capacitor, Ceramic, 1000pF/100V, 0805,SMD Build up Start SH1 POE S1 C10 Capacitor, Ceramic, 220pF/25V, 0805,SMD POE CY1 Safety Y1,Capacitor,1000pF/400V,Dip UXT D1-D4 Diode,Rectifier,1000V/1A,1N4007, DO-41 Good-Ark D5 Fast Recovery Rectifier, RS1M,1000V/1.0A, SMA PANJIT D6 Fast Recovery Rectifier,RS1A,200V/1.0A,SMA PANJIT D7 Diode, 1N4148 SMD PANJIT D8 Diode, schottky, 100V/5A, SB5100, DO-201AB Diodes Wire Finish 2 3 5 NC B-7 A-10 Turn s La yer 0.21Φ*1 0.025 *10W 1 0.025*11W Copper 1 0.025*11W 2 TEX-E 0.5Φ*1 1 0.025*11W 2 Type 32 2UEW 0.9 11 Insulation Size*QT Y Thick/ Wide Lay er 1 P2 3 1 32 2UEW 0.21Φ*1 1 0.025*11W 1 SH2 5 NC 13 2UEW 0.15Φ*3 1 0.025*11W 2 P3 4 5 12 0.21Φ*2 1 0.025*11W 2 SH3 5 core 3 2UEW Coopper wire 0.1Φ*1 1 0.025*11W 2 Note:1,Core and Bobbin:EE16 2,SH1,SH2 and SH3 are shielding; P1,P2,P3 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1 ♦ Electrical specifications Item Description Condition Limits L1 Axial Inductor, 1.5mH, 5*7,Dip SoKa R16 SMD Inductor, 2.2μH, 0805 SoKa 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac Q1 Mosfet Transistor, 4N60,TO-220 Infineon 2 P1 Inductance Inductance between pins 2and 1at 1Vac & 1kHz 0.39mH±%7 PCB1 PCB, L*W*T=52x30x1.6mm,Cem-1,Rev:A Jintong 3 Fuse,1A/250V TY-OHM P1 Leakage Inductance Inductance between 2 pins 1 with pins 4-5 and A-B shorted 75µH FR1 R2 Carbon Resistor, 200K ohm, 1206, 5% TY-OHM R3,15 Chip Resistor, 100 ohm, 0805, 5% TY-OHM R1 Chip Resistor, 51 ohm, 0805, 5% TY-OHM R5 Chip Resistor, 53.6K ohm, 0805,1% TY-OHM R6 Chip Resistor, 9.31K ohm, 0805, 1% TY-OHM R7,R8 Chip Resistor, 1.5M ohm, 0805 , 5% TY-OHM Typical Performance Characteristics Chip Resistor, 1ohm, 1206,1% TY-OHM Chip Resistor, 3K ohm, 0805, 5% TY-OHM R11 Chip Resistor, 4.7K ohm, 0805, 5% TY-OHM R4,R13 Chip Resistor, 22 ohm, 0805 , 5% TY-OHM R14 Chip Resistor, 100K ohm, 0805, 5% TY-OHM T1 Transformer, Lp=0.39mH, EE16 Not defined 100 80 60 40 20 0 90 115 230 264 Input Voltage (VAC) STANDBY POWER Efficiency Vs Po Efficiency R9 R12 Standy Power mW) Standby Power Vs Input Voltage 88.00% 86.00% 84.00% 82.00% 80.00% 78.00% 76.00% 74.00% 72.00% 70.00% 68.00% 25% Po 115V 230V 50% Po 75% Po 100% Po Output Power EFFICIENCY Transformer EVALUATION KITS ACT411_12V1A_Rev1.1 -9For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions LOW COST ACT412 12V/0.4A SHAVER CHARGER Input Voltage Device Vo Po Transformer Core Standby Power Efficiency Topology 90-264VAC ACT412 12V 6W EE16 94mW 77% QR flyback Key Features Demo Board Picture • Constant power mode protection for small power motor application • Advanced Quasi-Resonant mode operation. • Advanced burst mode operation enables low standby power • Frequency jittering and Quasi-Resonant technology to decrease EMI. • Patented frequency foldback and ActiveQRTM technology increases the average system efficiency and exceeds the latest ES2.0 efficiency standard with good margin. • Integrated patented line compensation • Integrate comprehensive protection. In case of over temperature, over/under voltage, short winding, short current sense resistor, open loop and overload protection. Mini size W*L*H=30mm*52mm*16mm Schematic Picture 4 -10For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected]. High Performance AC/DC Switching Power Solutions Bill of Materials REF DESCRIPTION MFTR U1 IC, ACT412,SOT23-6 Active-Semi. C1,C2 Capacitor, Electrolytic, 6.8uF/400V, 10x12mm KSC C3 Capacitor, Ceramic, 1000pF/500V, 0805,SMD POE C4 Capacitor, Electrolytic,4.7uF/35V,5x11mm KSC C5,C6 Capacitor, Electrolytic, 330uF/16V, 8x11.5mm KSC C8 Capacitor, Ceramic, 0.1uF/25V, 0805,SMD POE C9 Capacitor, Ceramic, 1000pF/100V, 0805,SMD POE ♦ Build up Winding Start Terminal P1 SH1 C10 Capacitor, Ceramic, 100pF/25V, 0805,SMD POE CY1 Safety Y1,Capacitor,1000pF/400V,Dip INC D1-D4 D5 D6 Diode,Rectifier,1000V/1A,1N4007, DO-41 Good-Ark Fast Recovery Rectifier, RS1M,1000V/1.0A, RMA PANJIT Fast Recovery Rectifier,RS1D,200V/1.0A,SMA PANJIT D7 NC D8 Diode, schottky, 100V/2A, SB2100, DO-41 S1 Wire Turn s Finish 2 3 5 NC 32 B-7 A-10 La yer 0.21Φ*1 0.025 *10W 1 0.025*11W Copper 1 0.025*11W 2 TEX-E 0.45Φ*1 1 0.025*11W 2 1 2UEW 0.9 12 Insulation Size*QT Y Type Thick/ Wide Lay er 1 P2 3 1 32 2UEW 0.21Φ*1 1 0.025*11W SH2 5 NC 13 2UEW 0.15Φ*3 1 0.025*11W 2 P3 4 5 17 0.2Φ*2 1 0.025*11W 2 SH3 5 core 3 2UEW Coopper wire 0.1Φ*1 1 0.025*11W 2 Note:1,Core and Bobbin:EE16 2,SH1,SH2 and SH3 are shielding; P1,P2,P3 are primary and S1 is secondary 3,Reverse the direction of bobbin when do the S1 ♦ Good-Ark Item Electrical specifications Description Condition Limits L1 Axial Inductor, 1.5mH, 5*7,Dip SoKa L2 Axial Inductor, 3uH, 0.55*5T, 5*7,Dip SoKa 1 Electrical Strength 50Hz, 1 minute, from primary and secondary 3000 Vac Q1 Mosfet Transistor, 4N60,TO-220 Infineon 2 P1 Inductance Inductance between pins 2and 1at 1Vac & 1kHz 0.45mH±%7 PCB1 PCB, L*W*T=52.2x30x1.6mm,Cem-1,Rev:A Jintong 3 Fuse,1A/250V TY-OHM P1 Leakage Inductance Inductance between 2 pins 1 with pins 4-5 and A-B shorted 75µH FR1 R1 Chip Resistor, 51 ohm, 0805, 5% R2 Carbon Resistor, 750K ohm, 1206, 5% TY-OHM R3 Chip Resistor, 100 ohm, 0805, 5% TY-OHM R4,R13 Chip Resistor, 22 ohm, 0805, 5% R5 Chip Resistor, 45.3K ohm, 0805,1% TY-OHM R6 Chip Resistor, 6.9K ohm, 0805, 1% TY-OHM TY-OHM Typical Performance Characteristics V-I Characteristic Vs Vin(25℃) TY-OHM R9 Chip Resistor, 0.75ohm, 1206,1% R10 NC R11 Chip Resistor, 6.8K ohm, 0805, 5% R12 Chip Resistor, 3K ohm, 0805 , 5% TY-OHM R14 Chip Resistor, 100K ohm, 0805 , 5% TY-OHM R15 Chip Resistor, 0 ohm, 0805, 5% R16 NC R17 Chip Resistor, 390 ohm, 0805, 5% T1 Transformer, Lp=0.45mH, EE16 Output Voltage(V) Chip Resistor, 1.5M ohm, 0805 , 5% 16.00 TY-OHM 90V 14.00 12.00 115V 10.00 230V 8.00 264V 6.00 High limit 4.00 2.00 Low limit 0.00 0 300 600 900 1200 Output Current(mA) TY-OHM CCCV VURVE Efficiency Vs Po TY-OHM 80.00% Efficiency R7,R8 TY-OHM TY-OHM 70.00% 115V 60.00% 230V 50.00% 40.00% 25% Po 50% Po 75% Po 100% Po Output Power EFFICIENCY Transformer EVALUATION KITS ACT412_12V0.4A_Rev1.0 -11For information regarding Active-Semi products, sales and authorized distributors, please contact: [email protected].