ACT513US-T - Active-Semi

ACT513
Rev 2, 24-Feb-14
ActiveQRTM Quasi-Resonant PWM Controller
ACT513 integrates comprehensive protection. In
case of over temperature, over voltage, winding
short, current sense resistor short, open loop and
overload conditions, it would enter into auto restart
mode including Cycle-by-Cycle current limiting.
FEATURES
• CCM and Quasi-Resonant Operation
• Adjustable up to 45kHz Switching Frequency
• OCP/OLP Protection
• Integrated Patented Frequency Foldback
ACT513 is to achieve no overshoot and very short
rise time even with a big capacitive load with the
built-in fast and soft start process.
Technique
• Integrated Patented Line Compensation
• Built-in Soft-Start Circuit
• Line Under-Voltage, Thermal, Output OverCurrent Sense Resistor Short Protection
In full load condition, ACT513 is able to be
designed to work in both CCM mode and DCM
mode to meet different types of applications. QuasiResonant (QR) operation mode can improve
efficiency during DCM operation, and reduce EMI
and further reduce the components in input filter.
Transformer Winding Short Protection
ACT513 is ideal for applications up to 60 Watts.
100mW Standby Power
Figure 1:
Complies with Global Energy Efficiency and
CEC Average Efficiency Standards
Simplified Application Circuit
voltage, Output Short Protections
•
•
•
•
• Tiny SOT23-6 Packages
APPLICATIONS
• AC/DC Adaptors/Chargers for Cell Phones,
Cordless Phone, PDAs, E-books
• Adaptors for Portable Media Player, DSCs,
Set-top boxes, DVD players, records
• Linear Adapter Replacements
GENERAL DESCRIPTION
The ACT513 is a high performance peak current
mode PWM controller. ACT513 applies ActiveQRTM
and frequency foldback technique to reduce EMI
and improve efficiency. ACT513’s maximum design
switching frequency is set at 45kHz. Very low
standby power, good dynamic response and
accurate voltage regulation is achieved with an
opto-coupler and the secondary side control circuit.
The idle mode operation enables low standby
power of 100mW with small output voltage ripple.
By applying frequency foldback and ActiveQRTM
technology, ACT513 increases the average system
efficiency compared to conventional solutions and
exceeds the latest ES2.0 efficiency standard with
good margin.
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Active-Semi Proprietary―For Authorized Recipients and Customers
ActiveQRTM is a trademark of Active-Semi.
www.active-semi.com
Copyright © 2014 Active-Semi, Inc.
ACT513
Rev 2, 24-Feb-14
ORDERING INFORMATION
PART NUMBER
TEMPERATURE RANGE
PACKAGE
PINS
PACKING
METHOD
ACT513US-T
-40°C to 85°C
SOT23-6
6
TUBE & REEL
TOP MARK
FSIT
PIN CONFIGURATION
SOT23-6
ACT513US
PIN DESCRIPTIONS
PIN
NAME
DESCRIPTION
1
CS
2
GND
Ground.
3
GATE
Gate Drive. Gate driver for the external MOSFET transistor.
4
VDD
Power Supply. This pin provides bias power for the IC during startup and steady state operation.
5
VDET
Valley Detector Pin. Connect this pin to a resistor divider network from the auxiliary winding to
detect zero-crossing points for valley turn on operation.
6
FB
Current Sense Pin. Connect an external resistor (RCS) between this pin and ground to set peak
current limit for the primary switch.
Feedback Pin. Connect this pin to optocouplers’s collector for output regulation.
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ACT513
Rev 2, 24-Feb-14
ABSOLUTE MAXIMUM RATINGSc
PARAMETER
VALUE
UNIT
FB, CS, VDET to GND
-0.3 to + 6
V
VDD, GATE to GND
-0.3 to + 28
V
0.45
W
-40 to 150
˚C
220
˚C/W
-55 to 150
˚C
300
˚C
Maximum Power Dissipation (SOT23-6)
Operating Junction Temperature
Junction to Ambient Thermal Resistance (θJA)
Storage Temperature
Lead Temperature (Soldering, 10 sec)
c: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods.
ELECTRICAL CHARACTERISTICS
(VDD = 14V, LM = 4mH, RCS = 1.27Ω, VOUT = 12V, NP = 122, NS =14, NA =15, TA = 25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Supply
VDD Turn-On Voltage
VDDON
VDD Rising from 0V
11.5
12.5
13.5
V
VDD Turn-Off Voltage
VDDOFF
VDD Falling after Turn-on
6.7
7.4
8.1
V
VDD Over Voltage Protection
VDDOVP
VDD Rising from 0V
25
VDD = 10V, before VDD Turn-on
8
Start Up Supply Current
IDDST
IDD Supply Current
IDD
V
13
µA
VDD = 15V, after VDD Turn-on ,FB
floating
0.6
mA
IDD Supply Current at Standby
IDDSTBY
FB = 1.3V
0.4
mA
IDD Supply Current at Fault
IDDFAULT
Fault mode, FB Floating
250
µA
Feedback
FB Pull up Resistor
RFB
15
kΩ
CS to FB Gain
ACS
3
V/V
3 + VBE
V
VFB at Max Peak Current
FB Threshold to Stop Switching
VFBBM1
1.35
V
FB Threshold to Start Switching
VFBBM2
1.51
V
4.2
V
320
ms
Output Overload Threshold
OverLoad/Over Voltage Blanking
Time
TOVBLANK
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Copyright © 2014 Active-Semi, Inc.
ACT513
Rev 2, 24-Feb-14
ELECTRICAL CHARACTERISTICS CONT’D
(VDD = 14V, LM = 4mH, RCS = 1.27Ω, VOUT = 12V, NP = 122, NS = 14, NA = 15, TA = 25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VCSLIM
0.91
0.974
1.03
V
TCSBLANK
300
400
500
ns
Current Limit
CS Current Limit Threshold
Leading Edge Blanking Time
GATE DRIVE
Gate Rise Time
TRISE
VDD = 10V, CL = 1nF
200
300
ns
Gate Falling Time
TFALL
VDD = 10V, CL = 1nF
115
200
ns
Gate Low Level ON-Resistance
RONLO
ISINK = 30mA
7
Ω
Gate High Level ON-Resistance
RONHI
ISOURCE = 30mA
40
Ω
GATE = 25V, before VDD
turn-on
Gate Leakage Current
1
µA
Oscillator
Maximum Switching Frequency
fMAX
Switching Frequency Foldback
fMIN
45
kHz
fMAX/3
kHz
75
%
100
mV
3.5
µs
1
µA
6
µs
CS Short Detection Threshold
0.112
V
CS Open Threshold Voltage
1.73
V
Abnormal OCP Blanking Time
150
ns
Thermal Shutdown Temperature
135
˚C
Maximum Duty Cycle
FB = 2.3V+VBE
DMAX
65
Valley Detection
ZCD Threshold Voltage
VDETTH
After valley detection time
window, if no valley detected, forcedly turn-on
main switch
Valley Detection Time Window
VDET Leakage Current
Protection
CS Short Waiting Time
Line UVLO
IVDETUVLO
0.1
mA
Line OVP
IVDETOVP
2
mA
VDET Over Voltage Protection
VDETVOOVP
2.72
V
VDET Vo Short Threshold
VDETVOshort
0.58
V
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ACT513
Rev 2, 24-Feb-14
FUNCTIONAL BLOCK DIAGRAM
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Copyright © 2014 Active-Semi, Inc.
ACT513
Rev 2, 24-Feb-14
FUNCTIONAL DESCRIPTION
switching. After it stops, as a result of a feedback
reaction, the feedback voltage increases. When the
feedback voltage reaches VFBBM2, ACT513 start
switching again. Feedback voltage drops again and
output voltage starts to bounds back and forward
with very small output ripple. ACT513 leaves idle
mode when load is added strong enough to pull
feedback voltage exceed VFBBM2.
ACT513 is a high performance peak current mode
low-voltage PWM controller IC. The controller
includes the most advance features that are
required in the adaptor applications up to 60 Watt.
Unique fast startup, frequency foldback, QR
switching technique, accurate peak current line
compensation, idle mode, short winding protection,
OCP, OTP, OVP and UVLO are included in the
controller.
Figure 2:
Idle Mode
Startup
Startup current of ACT513 is designed to be very
low so that VDD could be charged to VDDON
threshold level and device starts up quickly. A large
value startup resistor can therefore be used to
minimize the power loss yet reliable startup in
application. For a typical AC/DC adaptor with
universal input range design, two 1MΩ, 1/8 W
startup resistors could be used together with a VDD
capacitor(4.7uF) to provide a fast startup and yet
low power dissipation design solution.
During startup period, the IC begins to operate with
minimum Ippk to minimize the switching stresses
for the main switch, output diode and transformers.
And then, the IC operates at maximum power
output to achieve fast rise time. After this, VOUT
reaches about 90% VOUT , the IC operates with a
‘soft-landing’ mode(decrease Ippk) to avoid output
overshoot.
Vo 12V
Io
2A
0A
Vfb
Vfb_olp
Vfb_fl
Vfbbm2
Vfbbm1
Ip Ilim
Ip_FL
t
Primary Inductor Current Limit
Compensation vs Line
The ACT513 integrates a primary inductor peak
current limit compensation circuit to achieve
constant OLP over wide line.
Constant Voltage (CV) Mode Operation
Frequency Foldback
In constant voltage operation, the ACT513
regulates its output voltage through secondary side
control circuit . The output voltage information is
sensed at FB pin through OPTO coupling. The error
signal at FB pin is amplified through TL431 and
OPTO circuit. When the secondary output voltage is
above regulation, the error amplifier output voltage
decreases to reduce the switch current. When the
secondary output voltage is below regulation, the
error amplifier output voltage increases to ramp up
the switch current to bring the secondary output
back to regulation. The output regulation voltage is
determined by the following relationship:
When the load drops to 75% of full load level,
ACT513 starts to reduce the switching frequency,
which is proportional to the load current ,to improve
the efficiency of the converter.
VOUTCV
R
= VREF _ TL 431 × (1 + F 1 )
RF 2
ACT513’s load adaptive switching frequency
enables applications to meet all latest green energy
standards. The actual minimum average switching
frequency is programmable with output
capacitance, feedback circuit and dummy load
(while still meeting standby power).
Valley Switching
ACT513 employed valley switching from no load to
heavy load to reduce switching loss and EMI. In
discontinuous mode operation, the resonant voltage
between inductance and parasitic capacitance on
MOSFET source pin is coupled by auxiliary winding
and reflected on VDET pin through feedback
network R5, R6. Internally, the VDET pin is
connected to an zero-crossing detector to generate
the switch turn on signal when the conditions are
met.
(1)
where RF1 (R15) and RF2 (R16) are top and bottom
feedback resistor of the TL431.
No Load Idle Mode
In no load standby mode, the feedback voltage falls
below VFBBM2 and reaches VFBBM1, ACT513 stop
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Copyright © 2014 Active-Semi, Inc.
ACT513
Rev 2, 24-Feb-14
FUNCTIONAL DESCRIPTION CONT’D
Figure 3:
Valley Switching
V
Vdrain_gnd
DC voltage
Possible Valley turn on
Ton
t
T
Protection Features
The ACT513 provides full protection functions. The
following table summarizes all protection functions.
Auto-Restart Operation
ACT513 will enter into auto-restart mode when a
fault is identified. There is a startup phase in the
auto-restart mode. After this startup phase the
conditions are checked whether the failure is still
present. Normal operation proceeds once the
failure mode is removed. Otherwise, new startup
phase will be initiated again.
To reduce the power loss during fault mode, the
startup delay control is implemented. The startup
delay time increases over lines.
PROTECTION
FUNCTIONS
FAILURE
CONDITION
PROTECTION
MODE
VDD Over Voltage
VDD > 25V
(4 duty cycle)
Auto Restart
VVDET Over Voltage/No Voltage
VVD > 2.72V or
No switching
for 4 cycles
Auto Restart
Over Temperature
T > 135˚C
Auto Restart
Short Winding/
Short Diode
Over Load/Open
Loop
Output Short
Circuit
VDD Under Voltage
VCS > 1.72V
Auto Restart
IPK = ILIMIT or
VFB = 3.5V + VBE
for 320ms
Auto Restart
VDET < 0.58V
Auto Restart
VDD < 7.4V
Auto Restart
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ActiveQRTM is a trademark of Active-Semi.
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Copyright © 2014 Active-Semi, Inc.
ACT513
Rev 2, 24-Feb-14
TYPICAL APPLICATION
line frequency, tC is the estimated rectifier
conduction time, CIN is empirically selected to be
82µF electrolytic capacitors.
Design Example
The design example below gives the procedure for
12V/2A flyback converter using ACT513. Refer to
application circuit Figure 4, the design for an
adapter application starts with the following
specification:
Input Voltage Range
To get minimum primary peak current for saving
system efficiency, the maximum duty cycle is set to
be 50% at low line voltage 90VAC and the circuit
efficiency is estimated to be 88%. Then in CCM the
primary to secondary turn ratio NP/NS:
90VAC - 265VAC, 50/60Hz
Output Power, PO
24W
Np
Output Voltage, VOUTCV
12V
Ns
Full Load Current, IOUTFL
2A
0 . 5 × 105
=
= 8 . 75
( 1 − 0 . 5 ) × 12
OCP Current, IOUTMAX
2.3-2.6A
System Efficiency CV, η
0.88,DOE2.0
VINDC
=
_ MIN
=
_ MIN
2 × VIN ( MAX ) AC
2 × ( 265 V AC ) = 375 V
× VIN _ min
_ max
_ max
) × Vo
(4)
Po
Iedc =
η × Vin _ min × Dmax
(5)
12 × 2
= 0 .52 A
=
105 × 0.88 × 0.5
To get deeply CCM operation, set k=Ippk_start/
Ippk=0.57 in low line, then Ippk is:
2 × I edc
1+ k
2 × 0 . 52
=
= 0 . 662 A
1 + 0 . 57
I ppk =
(6)
The primary inductance is:
Lp =
Vindc × Duty
(1 − k ) × I ppk × fsw
(7)
105 × 0.5
=
= 4 mH
(1 − 0.57 ) × 0.662 × 45000
ER28 core is selected for the transformer. The core
minimum Ae is 0.82cm^2. The minimum turn of the
primary winding is:
Np ≥
=
Lp × ΔI ppk × 10 8
(8)
ΔBmax × Aemin ( gaus × cm 2 )
0.004 × (1 − k ) × 0.662 × 10
= 116T
1200 × 0.82
8
VDD voltage is set to 13V, base on the data we can
get primary, secondly and auxiliary turns:
N A Vdd + Vd _ aux
13 + 0.7
=
=
= 1 .1
Ns
Vo + Vd _ sec
12 + 0.45
(2)
1
2 × 24 × (
- 3 . 5 ms )
2
2
47
×
2 × 90 ≈105 V
0 . 88 × 82 μ F
VIN ( MAX ) DC =
=
2
2VINAC
DCCM
( 1 − DCCM
We set all CCM operation at full load in all line, the
low line primary average current is:
The operation for the circuit shown in Figure 4 is as
follows: the rectifier bridge D1−D4 and the capacitor
C1 convert the AC line voltage to DC bus voltage.
This voltage supplies the primary winding of the
transformer T1 and the startup circuit of R7/R8 and
C4 to VDD pin of ACT513. The primary power
current path is formed by the transformer’s primary
winding, Q1, and the current sense resistor R9. The
resistors R3, R2, diode D5 and capacitor C3 create
a snubber clamping network that protects Q1 from
damage due to high voltage spike during Q1’s turn
off. The network consisting of capacitor C4, diode
D6 and resistor R4 provides a VDD supply voltage
for ACT513 from the auxiliary winding of the
transformer. The resistor R4 is optional, which
filters out spikes and noise to makes VDD more
stable. C4 is the decoupling capacitor of the supply
voltage and energy storage component for startup.
During power startup, the current charges C4
through startup resistor R7/R8 from the rectified bus
voltage. The diode D8 and the capacitor C5/L2/C6
rectify filter the output voltage. The resistor divider
consists of R15 and R16 programs the output
voltage.
Since a bridge rectifier and bulk input
capacitors are used, the resulting minimum and
maximum DC input voltages can be calculated:
1
2 POUT (
- tC )
2 fL
η × C IN
=
(9)
So base on the result, we can get the turn ratios.
N p = 122 T , N s = 14 T , N a = 15 T
(10)
(3)
Where ŋ is the estimated circuit efficiency, fL is the
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Copyright © 2014 Active-Semi, Inc.
ACT513
Rev 2, 24-Feb-14
TYPICAL APPLICATION CONT’D
high current ground returns, the input capacitor
ground lead, and the ACT513 GND pin to a single
point (star ground configuration).
Determining the value of the current sense resistor
(R7) uses the maximum current in the design. So
the input primary maximum current at maximum
load:
I p _ OCP =
=
2
2 × Lp × fsw × Pin + Vin2 _ min × Dmax
2 × LP × fsw × Vin _ min × Dmax
12 × 2 × 2.6
+ 105 2 × 0.5 2
0.88
= 0.82 A
2 × 4 × 45 × 105 × 0.5
(11)
2 × 4 × 45 ×
Since the ACT513 internal current limit is set to
0.96V, the design of the current sense resistor is
given by:
RCS =
VCS
0 . 96
=
≈ 1 .27 Ω
I p _ OCP
0 . 82
(12)
The voltage feedback resistors are selected
according to the design. Because the line UVLO is
70VDC, the upper feedback resistor is given by:
RFB _ UP = VINDC _ UVLO ×
=
NA
N p × IFB _ UVLO
70 × 14
≈ 54 .9 kΩ
122 × 0.15 mA
(13)
The lower feedback resistor is selected as:
RFB _ LOW =
VFB
(VOUT + VD )
NA
- VFB
NS
RFB _ UP
(14)
2.2
=
× 54.9 kΩ ≈ 11.7 kΩ
(12 + 0.45 ) × 1.1 - 2.2
When selecting the output capacitor, a low ESR
electrolytic capacitor is recommended to minimize
ripple from the current ripple. The approximate
equation for the output capacitance value is given
by:
COUT =
IOUT
2
=
= 889μF
fsw × VRIPPLE 45k × 50mV
(15)
Three 470µF electrolytic capacitors are used to
further reduce the output ripple.
PCB Layout Guideline
Good PCB layout is critical to have optimal
performance. Decoupling capacitor (C4) and
feedback resistor (R5/R6) should be placed close to
VDD and FB pin respectively. There are two main
power path loops. One is formed by C1/C2, primary
winding, mosfet transistor and current sense
resistor (R9). The other is secondary winding,
rectifier D8 and output capacitors (C5/C6). Keep
these loop areas as small as possible. Connecting
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ACT513
Rev 2, 24-Feb-14
Figure 4:
Universal VAC Input, 12V/2A Output Adaptor
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Active-Semi Proprietary―For Authorized Recipients and Customers
ActiveQRTM is a trademark of Active-Semi.
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Copyright © 2014 Active-Semi, Inc.
ACT513
Rev 2, 24-Feb-14
Table 1:
ACT513 12V24W Bill of Materials
ITEM REFERENCE
DESCRIPTION
QTY
MANUFACTURER
1
U1
IC, ACT513, SOT23-6
1
Active-Semi
2
C1
Capacitor, Electrolytic, 82µF/400V, 18 × 20mm
1
Rubcon
3
C3
Capacitor, Ceramic,1000pF/1KV,DIP
1
POE
4
C4
Capacitor, Electrolytic,4.7µF/35V,5*11mm
1
KSC
5
C5,C6,C7
Capacitor, Solid, 470µF/16V, 8*16mm
3
Rubcon
6
C8
Capacitor, Ceramic, 0.1µF/50V,0805,SMD
1
POE
7
C9
Capacitor, Ceramic,1000pF/100V,0805,SMD
1
POE
8
Cfb
Capacitor, Ceramic,100pF/50V,0805,SMD
1
POE
9
BD1
GBL10 2A/600V 4Pin DIP
1
Good-Ark
10
D5
Diode, Ultra Fast, FR107,1000V/1.0A, DO-41
1
Good-Ark
11
D6
RS1M SMD
1
Good-Ark
12
D8
Diode, Schottky, 60V/30A, SBR3060, DO-220
1
Diodes
13
Dgate
Diode L4148 SMD
1
Good-Ark
14
LF1
CM Inductor, 50mH, UU10.5
1
SoKa
15
LF2
Axial Inductor, 0.75*5T, 5*7,Dip 200uH
1
SoKa
16
Q1
Mosfet Transisor, 04N65, TO-220F
1
Infineon
17
PCB1
PCB, L*W*T =49x68x1.6mm, Cem-1, Rev:A
1
Jintong
18
F1
Fusible, 2A/250V
1
TY-OHM
19
R1
Chip Resistor,22 Ω, SMD 0805, 5%
1
TY-OHM
20
R2
metal Resistor,100K Ω,DIP,1W,5%
1
TY-OHM
21
R3
Chip Resistor, 100Ω, 0805, 5%
1
TY-OHM
22
R4
Chip Resistor,4.7Ω, 0805, 5%
1
TY-OHM
23
R5
Chip Resistor,54.9kΩ, 0805, 1%
1
TY-OHM
24
R6
Chip Resistor, 11.8KΩ, 0805, 1%
1
TY-OHM
25
R7,R8
Chip Resistor, 1MΩ, 5%
2
TY-OHM
26
R9
metal Resistor, 1.27Ω, 1W, 1%
1
TY-OHM
27
R10
Chip Resistor, 510Ω, 1/4W, 5%
1
TY-OHM
28
R12,R14
Chip Resistor, 3.3KΩ, 0805, 5%
2
TY-OHM
29
R13
Chip Resistor, 10Ω, 0805, 5%
1
TY-OHM
30
R15
Chip Resistor,24.3kΩ, 0805,1%
1
TY-OHM
31
R16
Chip Resistor,6.19KΩ, 0805, 1%
1
TY-OHM
32
Rgate
Chip Resistor,330Ω, 0805, 5%
1
TY-OHM
33
T1
ER28 Lm=4mH
1
34
CX1
X capacitance, 0.1µF/400V,X1
1
35
NTC
Thermistor, SC053
1
TY-OHM
36
TVS
Varistor, 10471
1
TY-OHM
37
CY1
Y capacitance, 1000pF/400V,Y1
1
SEC
38
U2
Opto-coupler, PC817C CTR=200 dip-4
1
Sharp
39
U3
Voltage Regulator, TL431A, Vref=2.5V TO-92
1
ST
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Active-Semi Proprietary―For Authorized Recipients and Customers
ActiveQRTM is a trademark of Active-Semi.
www.active-semi.com
Copyright © 2014 Active-Semi, Inc.
ACT513
Rev 2, 24-Feb-14
TYPICAL PERFORMANCE CHARACTERISTICS
Startup Supply Current vs. Temperature
VDD ON/OFF Voltage vs. Temperature
VDDON and VDDOFF (V)
11.5
Startup Supply Current (µA)
VDDON
12.5
10.5
9.5
8.5
VDDOFF
7.5
9
8
7
6
0
40
80
120
0
20
80
100
Supply Current at Idle/Fault Mode vs.
Temperature
Maximum Switching Frequency vs.
Temperature
Idle Mode
0.4
0.3
Fault Mode
0
20
40
60
80
100
120
120
ACT513-004
ACT513-003
0.5
0.2
60
50
40
0
20
Temperature (°C)
40
60
80
100
120
Temperature (°C)
VFB Threshold Voltage vs. Temperature
VCS Voltage vs. Temperature
VFB Threshold Voltage (V)
0.9
0.8
0.7
ACT513-006
5
ACT513-005
1.0
VCS Voltage (V)
60
Temperature (°C)
0.6
0.6
0
40
Temperature (°C)
Maximum Switching Frequency (KHz)
6.5
Supply Current (mA)
ACT513-002
10
ACT513-001
13.5
4
OLP
3
Start Switching
2
1
Stop Switching
0
20
40
60
80
100
0
120
20
Temperature (°C)
Innovative PowerTM
60
80
100
120
Temperature (°C)
- 12 -
Active-Semi Proprietary―For Authorized Recipients and Customers
ActiveQRTM is a trademark of Active-Semi.
40
www.active-semi.com
Copyright © 2014 Active-Semi, Inc.
ACT513
Rev 2, 24-Feb-14
PACKAGE OUTLINE
SOT23-6 PACKAGE OUTLINE AND DIMENSIONS
Active-Semi, Inc. reserves the right to modify the circuitry or specifications without notice. Users should evaluate each
product to make sure that it is suitable for their applications. Active-Semi products are not intended or authorized for use
as critical components in life-support devices or systems. Active-Semi, Inc. does not assume any liability arising out of
the use of any product or circuit described in this datasheet, nor does it convey any patent license.
Active-Semi and its logo are trademarks of Active-Semi, Inc. For more information on this and other products, contact
[email protected] or visit http://www.active-semi.com.
is a registered trademark of Active-Semi.
Innovative PowerTM
- 13 -
Active-Semi Proprietary―For Authorized Recipients and Customers
ActiveQRTM is a trademark of Active-Semi.
www.active-semi.com
Copyright © 2014 Active-Semi, Inc.