ROHM DTC114WSATP

DTC114WE / DTC114WUA / DTC114WKA / DTC114WSA
Transistors
100mA / 50V Digital transistors
(with built-in resistors)
DTC114WE / DTC114WUA / DTC114WKA / DTC114WSA
zApplications
Inverter, Interface, Driver
zExternal dimensions (Unit : mm)
EMT3
(SC-75A)
<SOT-416>
0.55
0.3
(2)
1.6
(3)
0.8
(1)
0.2
0.2
0.15
0.5 0.5
1.0
(1) GND
0.1Min.
zFeatures
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.
2) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input,
and parasitic effects are almost completely eliminated.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
4) Higher mounting densities can be achieved.
0.7
1.6
Each lead has same dimensions
(2) IN
(3) OUT
Abbreviated symbol : 84
0.9
2.0
UMT3
<SC-70>
0.7
0.2
0.3
(1)
(2)
0.65 0.65
Each lead has same dimensions
Abbreviated symbol : 84
zPackaging specifications
DTC114WE
DTC114WUA
DTC114WKA
DTC114WSA
zEquivalent circuit
T106
3000
−
−
−
−
−
−
T146
3000
−
TP
5000
−
−
−
−
−
1.1
0.4
<SC-59>
0.8
(3)
(2)
(1)
0.95 0.95
0.15
1.9
(1) GND
(2) IN
(3) OUT
0.3Min.
TL
3000
SMT3
1.6
2.8
Part No.
2.9
EMT3 UMT3 SMT3 SPT
Taping Taping Taping Taping
Code
Basic ordering unit (pieces)
0.15
1.3
(1) GND
(2) IN
(3) OUT
Package
Packaging type
0.1Min.
zStructure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
2.1
1.25
(3)
Each lead has same dimensions
Abbreviated symbol : 84
SPT
4.0
2.0
R1
OUT
(15Min.)
IN
3Min.
3.0
(SC-72)
R2
0.45
GND(+)
IN
OUT
GND(+)
2.5
(1) GND
(2) OUT
(3) IN
0.5
0.45
5.0
(1) (2) (3)
Abbreviated symbol : C114WS
R1=10kΩ / R2=4.7kΩ
Rev.B
1/3
DTC114WE / DTC114WUA / DTC114WKA / DTC114WSA
Transistors
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
VCC
VI
50
−10 to +30
V
V
IO
100
100
150 ∗
200 ∗
mW
300 ∗
150
−55 to +150
°C
°C
Supply voltage
Input voltage
Output current
IC(Max.)
DTC114WE
Power
dissipation
DTC114WUA / DTC114WKA
PD
DTC114WSA
Junction temperature
Storage temperature
Tj
Tstg
mA
∗ When mounted on the recommended land
zExternal characteristics (Unit: mm)
Parameter
Symbol
Min.
Typ.
Max.
Input voltage
VI(off)
VI(on)
−
−
0.8
3
−
Output voltage
VO(on)
−
0.1
−
0.3
II
−
−
IO(off)
GI
−
24
R1
R2/R1
7
0.37
−
−
10
0.47
−
250
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗ Characteristics of built-in transistor
fT
∗
0.88
0.5
−
13
0.57
−
Unit
V
V
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=2mA
IO=10mA, II=0.5mA
µA
VI=5V
VCC=50V, VI=0V
−
IO=10mA, VO=5V
mA
kΩ
−
MHz
−
−
VCE=10V, IE= −5mA, f=100MHz
Rev.B
2/3
DTC114WE / DTC114WUA / DTC114WKA / DTC114WSA
Transistors
zElectrical characteristics curves
1k
VCC=5V
5m
Ta=100°C
5
Ta= −40°C
Ta= 25°C
2
Ta=100°C
1
500m
Ta=100°C
1m
500µ
Ta=25°C
200µ
100µ
50µ
Ta= −40°C
20µ
10µ
5µ
2µ
100m
100µ 200µ 500µ 1m 2m
5m 10m 20m 50m 100m
Fig.1 Input voltage vs. Output current
(ON characteristics)
1
200
Ta= 25°C
100
Ta= −40°C
50
20
10
5
2
1µ
0
500m
1
1.5
2
2.5
3
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : IO (A)
DC CURRENT GAIN : GI
2m
20
10
VO=5V
500
200m
OUTPUT VOLTAGE : VO(on) (V)
10m
VO=0.3V
50
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI(on) (V)
100
Fig.2 Output current vs. Input voltage
(OFF characteristics)
1
100µ 200µ 500µ 1m 2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. Output current
IO / II= 20
500m
Ta= 25°C
200m
Ta=100°C
100m
Ta= −40°C
50m
20m
10m
1m
2m
5m
10m
20m
50m
100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. Output current
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1