ACT511 Rev 2, 21-Feb-14 ActiveQRTM Quasi-Resonant PWM Controller FEATURES good margin. • Quasi-Resonant Operation ACT511 integrates comprehensive protection. In case of over temperature, over voltage, winding short, current sense resistor short, open loop and overload conditions, it would enter into auto restart mode including Cycle-by-Cycle current limiting. • Adjustable up to 75kHz Switching Frequency • Accurate OCP/OLP Protection • Integrated Patented Frequency Foldback ACT511 is to achieve no overshoot and very short rise time even with a big capacitive load (4000µF) with the built-in fast and soft start process. Technique • Integrated Patented Line and Primary Inductance Compensation The Quasi-Resonant (QR) operation mode can improve efficiency, reduce EMI and further reduce the components in input filter. • Built-in Soft-Start Circuit • Line Under-Voltage, Thermal, Output Overvoltage, Output Short Protections • • • • ACT511 is ideal for applications up to 60 Watts. Current Sense Resistor Short Protection Figure 1: Transformer Winding Short Protection Simplified Application Circuit 100mW Standby Power Complies with Global Energy Efficiency and CEC Average Efficiency Standards • Tiny SOT23-6 Packages APPLICATIONS • AC/DC Adaptors/Chargers for Cell Phones, Cordless Phone, PDAs, E-books • Adaptors for Portable Media Player, DSCs, Set-top boxes, DVD players, records • Linear Adapter Replacements GENERAL DESCRIPTION The ACT511 is a high performance peak current mode PWM controller. ACT511 applies ActiveQRTM and frequency foldback technique to reduce EMI and improve efficiency. ACT511’s maximum switching frequency is set at 90kHz. Very low standby power, good dynamic response and accurate voltage regulation is achieved with an opto-coupler and the secondary side control circuit. The idle mode operation enables low standby power of 100mW with small output voltage ripple. By applying frequency foldback and ActiveQRTM technology, ACT511 increases the average system efficiency compared to conventional solutions and exceeds the latest ES2.0 efficiency standard with Innovative PowerTM -1- Active-Semi Proprietary―For Authorized Recipients and Customers ActiveQRTM is a trademark of Active-Semi. www.active-semi.com Copyright © 2014 Active-Semi, Inc. ACT511 Rev 2, 21-Feb-14 ORDERING INFORMATION PART NUMBER TEMPERATURE RANGE PACKAGE PINS PACKING METHOD ACT511US-T -40°C to 85°C SOT23-6 6 TUBE & REEL TOP MARK FSGT PIN CONFIGURATION SOT23-6 ACT511US PIN DESCRIPTIONS PIN NAME DESCRIPTION 1 CS 2 GND Ground. 3 GATE Gate Drive. Gate driver for the external MOSFET transistor. 4 VDD Power Supply. This pin provides bias power for the IC during startup and steady state operation. 5 VDET Valley Detector Pin. Connect this pin to a resistor divider network from the auxiliary winding to detect zero-crossing points for valley turn on operation. 6 FB Current Sense Pin. Connect an external resistor (RCS) between this pin and ground to set peak current limit for the primary switch. Feedback Pin. Connect this pin to optocouplers’s collector for output regulation. Innovative PowerTM -2- Active-Semi Proprietary―For Authorized Recipients and Customers ActiveQRTM is a trademark of Active-Semi. www.active-semi.com Copyright © 2014 Active-Semi, Inc. ACT511 Rev 2, 21-Feb-14 ABSOLUTE MAXIMUM RATINGSc PARAMETER VALUE UNIT FB, CS, VDET to GND -0.3 to + 6 V VDD, GATE to GND -0.3 to + 28 V 0.45 W -40 to 150 ˚C 220 ˚C/W -55 to 150 ˚C 300 ˚C Maximum Power Dissipation (SOT23-6) Operating Junction Temperature Junction to Ambient Thermal Resistance (θJA) Storage Temperature Lead Temperature (Soldering, 10 sec) c: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods. ELECTRICAL CHARACTERISTICS (VDD = 13.5V, LM = 0.68mH, RCS = 0.953Ω, VOUT = 5V, NP = 106, NS = 7, NA = 18, TA = 25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT 11.16 12 12.84 V 6.6 7.4 8.2 V Supply VDD Turn-On Voltage VDDON VDD Rising from 0V VDD Turn-Off Voltage VDDOFF VDD Falling after Turn-on VDD Over Voltage Protection VDDOVP VDD Rising from 0V 25 VDD = 10V, before VDD Turn-on 8 Start Up Supply Current IDDST IDD Supply Current IDD V 15 µA VDD = 15V, after VDD Turn-on ,FB floating 0.6 mA IDD Supply Current at Standby IDDSTBY FB = 1.3V 0.4 mA IDD Supply Current at Fault IDDFAULT Fault mode, FB Floating 250 µA Feedback FB Pull up Resistor RFB 15 kΩ CS to FB Gain ACS 3 V/V 3 + VBE V VFB at Max Peak Current FB Threshold to Stop Switching VFBBM1 1.82 V FB Threshold to Start Switching VFBBM2 1.91 V 3.5 + VBE V 320 ms Output Overload Threshold OverLoad/Over Voltage Blanking Time TOVBLANK Innovative PowerTM -3- Active-Semi Proprietary―For Authorized Recipients and Customers ActiveQRTM is a trademark of Active-Semi. www.active-semi.com Copyright © 2014 Active-Semi, Inc. ACT511 Rev 2, 21-Feb-14 ELECTRICAL CHARACTERISTICS CONT’D (VDD = 13.5V, LM = 0.68mH, RCS = 0.953Ω, VOUT = 5V, NP = 106, NS = 7, NA = 18, TA = 25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT VCSLIM 0.91 0.96 1.01 V TCSBLANK 240 300 360 ns Current Limit CS Current Limit Threshold Leading Edge Blanking Time GATE DRIVE Gate Rise Time TRISE VDD = 10V, CL = 1nF 200 300 ns Gate Falling Time TFALL VDD = 10V, CL = 1nF 115 200 ns Gate Low Level ON-Resistance RONLO ISINK = 30mA 7 Ω Gate High Level ON-Resistance RONHI ISOURCE = 30mA 40 Ω GATE = 25V, before VDD turn-on Gate Leakage Current 1 µA 88 kHz Oscillator Maximum Switching Frequency fMAX Switching Frequency Foldback fMIN 70 fMAX/3 kHz 75 % 100 mV 3.5 µs 1 µA 2 µs CS Short Detection Threshold 0.115 V CS Open Threshold Voltage 1.73 V Abnormal OCP Blanking Time 150 ns Thermal Shutdown Temperature 135 ˚C Maximum Duty Cycle FB = 2.3V+VBE 79 DMAX 65 Valley Detection ZCD Threshold Voltage VDETTH After valley detection time window, if no valley detected, forcedly turn-on main switch Valley Detection Time Window VDET Leakage Current Protection CS Short Waiting Time Line UVLO IVDETUVLO 0.1 mA Line OVP IVDETOVP 2 mA VDET Over Voltage Protection VDETVOOVP 2.72 V VDET Vo Short Threshold VDETVOshort 0.58 V Innovative PowerTM -4- Active-Semi Proprietary―For Authorized Recipients and Customers ActiveQRTM is a trademark of Active-Semi. www.active-semi.com Copyright © 2014 Active-Semi, Inc. ACT511 Rev 2, 21-Feb-14 FUNCTIONAL BLOCK DIAGRAM Innovative PowerTM -5- Active-Semi Proprietary―For Authorized Recipients and Customers ActiveQRTM is a trademark of Active-Semi. www.active-semi.com Copyright © 2014 Active-Semi, Inc. ACT511 Rev 2, 21-Feb-14 FUNCTIONAL DESCRIPTION switching. After it stops, as a result of a feedback reaction, the feedback voltage increases. When the feedback voltage reaches VFBBM2, ACT511 start switching again. Feedback voltage drops again and output voltage starts to bounds back and forward with very small output ripple. ACT511 leaves idle mode when load is added strong enough to pull feedback voltage exceed VFBBM2. ACT511 is a high performance peak current mode low-voltage PWM controller IC. The controller includes the most advance features that are required in the adaptor applications up to 60 Watt. Unique fast startup, frequency foldback, QR switching technique, accurate OLP, idle mode, external compensation adjustment, short winding protection, OCP, OTP, OVP and UVLO are included in the controller. Figure 2: Idle Mode Startup Startup current of ACT511 is designed to be very low so that VDD could be charged to VDDON threshold level and device starts up quickly. A large value startup resistor can therefore be used to minimize the power loss yet reliable startup in application. For a typical AC/DC adaptor with universal input range design, two 1MΩ, 1/8 W startup resistors could be used together with a VDD capacitor(4.7µF) to provide a fast startup and yet low power dissipation design solution. During startup period, the IC begins to operate with minimum Ippk to minimize the switching stresses for the main switch, output diode and transformers. And then, the IC operates at maximum power output to achieve fast rise time. After this, VOUT reaches about 90% VOUT , the IC operates with a ‘soft-landing’ mode(decrease Ippk) to avoid output overshoot. Vo 12V Io 0A Vfb Vfb_olp Vfb_fl Vfbbm2 Vfbbm1 Ip Ilim Ip_FL t Primary Inductance Compensation The ACT511 integrates a built-in primary inductance compensation circuit to maintain constant OLP despite variations in transformer manufacturing. The compensated ranges is +/-7%. Primary Inductor Current Limit Compensation Constant Voltage (CV) Mode Operation In constant voltage operation, the ACT511 regulates its output voltage through secondary side control circuit . The output voltage information is sensed at FB pin through OPTO coupling. The error signal at FB pin is amplified through TL431 and OPTO circuit. When the secondary output voltage is above regulation, the error amplifier output voltage decreases to reduce the switch current. When the secondary output voltage is below regulation, the error amplifier output voltage increases to ramp up the switch current to bring the secondary output back to regulation. The output regulation voltage is determined by the following relationship: VOUTCV = V REF _ TL 431 × (1 + R F1 ) RF 2 2A The ACT511 integrates a primary inductor peak current limit compensation circuit to achieve constant OLP over wide line and wide inductance. Frequency Foldback When the load drops to 75% of full load level, ACT511 starts to reduce the switching frequency, which is proportional to the load current ,to improve the efficiency of the converter. ACT511’s load adaptive switching frequency enables applications to meet all latest green energy standards. The actual minimum average switching frequency is programmable with output capacitance, feedback circuit and dummy load (while still meeting standby power). (1) where RF1 (R15) and RF2 (R16) are top and bottom feedback resistor of the TL431. No Load Idle Mode In no load standby mode, the feedback voltage falls below VFBBM2 and reaches VFBBM1, ACT511 stop Innovative PowerTM -6- Active-Semi Proprietary―For Authorized Recipients and Customers ActiveQRTM is a trademark of Active-Semi. www.active-semi.com Copyright © 2014 Active-Semi, Inc. ACT511 Rev 2, 21-Feb-14 FUNCTIONAL DESCRIPTION CONT’D Valley Switching ACT511 employed valley switching from medium load to heavy load to reduce switching loss and EMI. In discontinuous mode operation, the resonant voltage between inductance and parasitic capacitance on MOSFET source pin is coupled by auxiliary winding and reflected on VDET pin through feedback network R5, R6. Internally, the VDET pin is connected to an zero-crossing detector to generate the switch turn on signal when the conditions are met. PROTECTION FUNCTIONS FAILURE CONDITION PROTECTION MODE VDD Over Voltage VDD > 25V (4 duty cycle) Auto Restart VVDET Over Voltage/No Voltage VVD > 2.75V or No switching for 4 cycles Auto Restart Over Temperature T > 135˚C Auto Restart VCS > 1.75V Auto Restart IPK = ILIMIT or VFB = 3.5V + VBE for 320ms Auto Restart VDET < 0.6V Auto Restart VDD < 7V Auto Restart Short Winding/ Short Diode Figure 3: Over Load/Open Loop Valley Switching Output Short Circuit V VDD Under Voltage Vdrain_gnd DC voltage Possible Valley turn on Ton t T Protection Features The ACT511 provides full protection functions. The following table summarizes all protection functions. Auto-Restart Operation ACT511 will enter into auto-restart mode when a fault is identified. There is a startup phase in the auto-restart mode. After this startup phase the conditions are checked whether the failure is still present. Normal operation proceeds once the failure mode is removed. Otherwise, new startup phase will be initiated again. To reduce the power loss during fault mode, the startup delay control is implemented. The startup delay time increases over lines. Innovative PowerTM -7- Active-Semi Proprietary―For Authorized Recipients and Customers ActiveQRTM is a trademark of Active-Semi. www.active-semi.com Copyright © 2014 Active-Semi, Inc. ACT511 Rev 2, 21-Feb-14 TYPICAL APPLICATION Where ŋ is the estimated circuit efficiency, fL is the line frequency, tC is the estimated rectifier conduction time, CIN is empirically selected to be 33µF electrolytic capacitors. Design Example The design example below gives the procedure for a DCM flyback converter using ACT511. Refer to application circuit Figure 4, the design for an adapter application starts with the following specification: Input Voltage Range The maximum duty cycle is set to be 45% at low line voltage 90VAC and the circuit efficiency is estimated to be 80%. Then the average input current is: 90VAC - 265VAC, 50/60Hz 15W Output Power, PO = V OUT × I OUT _ FL V INDC _ MIN × η Output Voltage, VOUTCV 5V I IN Full Load Current, IOUTFL 3A 5 × 3 = 208 mA = 90 × 0 . 8 OCP Current, IOUTMAX 3.9-4.5A System Efficiency CV, η 0.80 VINDC = _ MIN I ppk Lp = 2V ) DC = 2 × VIN ( MAX ) AC 2 × ( 265 V AC ) = 375 V Innovative PowerTM = 2 × II N 2 × 208 mA = = 926 mA D MAX 0 . 45 VIN DMAX 90 × 0.45 = = 0.68 mH I ppk _ FLfsw 926 mA × 65 kHz T ON _ FL = Lp I ppk _ FL V INDC _ MIN (6) (7) 0 . 68 mH × 926 mA = = 7 μs 90 The ringing periods from primary inductance with mosfet drain-source capacitor: TRINGING _ MAX = 2π LpCDS _ MAX = 2 × 3.14 × 0.68mH ×100PF = 1.57 μs (8) To guarantee the valley turn on switching at full load, secondly reset time at full load can be calculated: TRST = Tsw - TON _ FL - 0.5TRINGING _ MAX = 1 / 65 kHz - 7 μs - 0.5 × 1.57 μs = 7.6 μs (9) The minimum primary to secondary turn ratio NP/NS: T V IN _ MIN NP = ON _ FL × NS T RST V OUT + V D = (2) (10) 7 90 × = 15 . 35 7 .6 5 + 0 .4 The auxiliary to secondary turn ratio NA/NS: N A VDD + VD ' 13 .5 + 0 .45 = = = 2 .58 N S VOUT + VD 5 + 0 .4 (11) (3) -8- Active-Semi Proprietary―For Authorized Recipients and Customers ActiveQRTM is a trademark of Active-Semi. (5) The primary turn on time at full load: 2 POUT ( = _ FL The primary inductance of the transformer: 1 - 3 . 5 ms ) 2 × 15 × ( 2 × 2 47 ≈90 V 2 × 90 0 . 8 × 33 μ F VIN ( MAX = 1 - tC ) 2 fL η × C IN (4) The input primary peak current: The operation for the circuit shown in Figure 4 is as follows: the rectifier bridge D1−D4 and the capacitor C1/C2 convert the AC line voltage to DC bus voltage. This voltage supplies the primary winding of the transformer T1 and the startup circuit of R7/ R8 and C4 to VDD pin of ACT511. The primary power current path is formed by the transformer’s primary winding, Q1, and the current sense resistor R9. The resistors R3, R2, diode D5 and capacitor C3 create a snubber clamping network that protects Q1 from damage due to high voltage spike during Q1’s turn off. The network consisting of capacitor C4, diode D6 and resistor R4 provides a VDD supply voltage for ACT511 from the auxiliary winding of the transformer. The resistor R4 is optional, which filters out spikes and noise to makes VDD more stable. C4 is the decoupling capacitor of the supply voltage and energy storage component for startup. During power startup, the current charges C4 through startup resistor R7/R8 from the rectified bus voltage. The diode D8 and the capacitor C5/L2/C6 rectify filter the output voltage. The resistor divider consists of R15 and R16 programs the output voltage. Since a bridge rectifier and bulk input capacitors are used, the resulting minimum and maximum DC input voltages can be calculated: 2 INAC _ MIN _ MAX www.active-semi.com Copyright © 2014 Active-Semi, Inc. ACT511 Rev 2, 21-Feb-14 TYPICAL APPLICATION CONT’D EE19 core is selected for the transformer. The gapped core with an effective inductance ALE of 60 nH/T2 is selected. The turn of the primary winding is: LP = ALE NP = 0.68 mH = 106T 60 nH / T 2 PCB Layout Guideline Good PCB layout is critical to have optimal performance. Decoupling capacitor (C4) and feedback resistor (R5/R6) should be placed close to VDD and FB pin respectively. There are two main power path loops. One is formed by C1/C2, primary winding, mosfet transistor and current sense resistor (R9). The other is secondary winding, rectifier D8 and output capacitors (C5/C6). Keep these loop areas as small as possible. Connecting high current ground returns, the input capacitor ground lead, and the ACT511 GND pin to a single point (star ground configuration). (12) The turns of secondary and auxiliary winding can be derived accordingly: NS = Ns 1 × Np = × 106 = 7T Np 15 .35 (13) NA = NA × N s = 2 . 58 × 7 = 18 T NS (14) Determining the value of the current sense resistor (R7) uses the maximum current in the design. So the input primary maximum current at maximum load: Ip _OCP = 2 × IOUT _OCP ×VOUT 2 × 3.9 × 5 = = 1.05A LP × fsw ×η 0.68 × 65 × 0.8 (15) Since the ACT511 internal current limit is set to 1V, the design of the current sense resistor is given by: R CS = VCS 1 = ≈ 0 . 953 Ω I p _ OCP 1 . 05 (16) The voltage feedback resistors are selected according to the design. Because the line UVLO is 65VDC, the upper feedback resistor is given by: R FB _ UP = V INDC _ UVLO × NA N p × I FB _ UVLO (17) 65 × 18 = ≈ 53 . 6 k Ω 106 × 0 . 2 mA The lower feedback resistor is selected as: RFB _ LOW = V FB (VOUT + VD ) NA - VFB NS RFB _ UP (18) 2. 2 = × 53.6 kΩ ≈ 9.953 kΩ ( 5 + 0.4 ) ×18 / 7 - 2.2 When selecting the output capacitor, a low ESR electrolytic capacitor is recommended to minimize ripple from the current ripple. The approximate equation for the output capacitance value is given by: COUT = IOUT 3 = = 923μF fsw ×VRIPPLE 65k × 50mV (19) Two 820µF electrolytic capacitors are used to further reduce the output ripple. Innovative PowerTM -9- Active-Semi Proprietary―For Authorized Recipients and Customers ActiveQRTM is a trademark of Active-Semi. www.active-semi.com Copyright © 2014 Active-Semi, Inc. ACT511 Rev 2, 21-Feb-14 Figure 4: Universal VAC Input, 5V/3A Output Adaptor Innovative PowerTM - 10 - Active-Semi Proprietary―For Authorized Recipients and Customers ActiveQRTM is a trademark of Active-Semi. www.active-semi.com Copyright © 2014 Active-Semi, Inc. ACT511 Rev 2, 21-Feb-14 Table 1: ACT511 5V15W Bill of Materials ITEM REFERENCE DESCRIPTION QTY MANUFACTURER IC, ACT511, SOT23-6 1 Active-Semi Capacitor, Electrolytic, 15µF/400V, 12 × 14mm 2 KSC 1 U1 2 C1,C2 3 C3 Capacitor, Ceramic,1000pF/500V,0805,SMD 1 POE 4 C4 Capacitor, Electrolytic, 4.7µF/35V, 5 × 11mm 1 KSC 5 C5,C6 Capacitor, Electrolytic, 820µF/10V, 10 × 11.5mm 2 KSC 6 C7,C8 Capacitor, Ceramic, 0.1µF/25V,0805,SMD 2 POE 7 C9 Capacitor, Ceramic,1000pF/100V,0805,SMD 1 POE 8 Cfb Capacitor, Ceramic,1000pF/50V,0805,SMD 1 POE 9 D1-D4 Diode, Rectifier ,1000V1A, 1N4007, DO-41 4 Good-Ark 10 D5,D6 Diode, Ultra Fast, FR107,1000V/1.0A, DO-41 2 Good-Ark 11 D8 Diode, Schottky, 40V/30A, SBL3040, DO-220 1 Good-Ark 12 L1 DM Inductor, 1.5mH,R5 1 SoKa 13 L2 DM Inductor, 3µH, R5 1 SoKa 14 Q1 Mosfet Transisor, 4N65, TO-220F 1 ST 15 PCB1 PCB, L*W*T = 48.5х29х1.6mm, Cem-1, Rev:A 1 Jintong 16 F1 Fusible, 1A/250V 1 TY-OHM 17 R1 Carbon Resistor, 22Ω, 0805, 5% 1 TY-OHM 18 R2 Carbon Resistor, 750kΩ, 1W, 5% 1 TY-OHM 19 R3 Chip Resistor, 100Ω, 0805, 5% 1 TY-OHM 20 R4 Chip Resistor, 4.7Ω, 0805, 5% 1 TY-OHM 21 R5 Chip Resistor, 53.6kΩ, 0805, 1% 1 TY-OHM 22 R6 Chip Resistor, 9.95kΩ, 0805, 1% 1 TY-OHM 23 R7,R8 Chip Resistor, 1MΩ, 0805, 5% 2 TY-OHM 24 R9 Chip Resistor, 0.953Ω,1W, 1% 1 TY-OHM 25 R10,R12 Chip Resistor, 1.5KΩ, 0805, 5% 2 TY-OHM 26 Rgate Chip Resistor, 22kΩ, 0805, 5% 1 TY-OHM 27 R14 Chip Resistor, 3.3kΩ, 0805, 5% 1 TY-OHM 28 R15 Chip Resistor, 10.7kΩ, 0805, 1% 1 TY-OHM 29 R16 Chip Resistor, 10.5kΩ, 0805, 1% 1 TY-OHM 30 T1 Transformer, LP = 0.68mH, EE19 1 31 CY1 Y capacitance, 1000pF/400V,Y1 1 SEC 32 U2 Opto-coupler, PC817C CTR = 200 1 Sharp 33 U3 Voltage Regulator, TL431A, VREF = 2.5V 1 ST Innovative PowerTM - 11 - Active-Semi Proprietary―For Authorized Recipients and Customers ActiveQRTM is a trademark of Active-Semi. www.active-semi.com Copyright © 2014 Active-Semi, Inc. ACT511 Rev 2, 21-Feb-14 TYPICAL PERFORMANCE CHARACTERISTICS VDD ON/OFF Voltage vs. Temperature Startup Supply Current (µA) VDDON and VDDOFF (V) 11.5 10.5 9.5 8.5 VDDOFF 7.5 8 7 6 0 40 80 120 0 20 80 100 Supply Current at Idle/Fault Mode vs. Temperature Maximum Switching Frequency vs. Temperature 0.3 Fault Mode 0 20 40 60 80 100 120 120 90 ACT511-004 ACT511-003 Idle Mode 0.2 80 70 60 0 20 Temperature (°C) 40 60 80 100 120 Temperature (°C) VFB Threshold Voltage vs. Temperature VCS Voltage vs. Temperature VFB Threshold Voltage (V) 0.9 0.8 0.7 4 ACT511-006 5 ACT511-005 1.0 VCS Voltage (V) 60 Temperature (°C) 0.4 0.6 0 40 Temperature (°C) Maximum Switching Frequency (KHz) 6.5 Supply Current (mA) ACT511-002 VDDON 12.5 Startup Supply Current vs. Temperature 9 ACT511-001 13.5 OLP 3 Start Switching 2 Stop Switching 1 0 20 40 60 80 100 0 120 20 Temperature (°C) Innovative PowerTM 60 80 100 120 Temperature (°C) - 12 - Active-Semi Proprietary―For Authorized Recipients and Customers ActiveQRTM is a trademark of Active-Semi. 40 www.active-semi.com Copyright © 2014 Active-Semi, Inc. ACT511 Rev 2, 21-Feb-14 PACKAGE OUTLINE SOT23-6 PACKAGE OUTLINE AND DIMENSIONS Active-Semi, Inc. reserves the right to modify the circuitry or specifications without notice. Users should evaluate each product to make sure that it is suitable for their applications. Active-Semi products are not intended or authorized for use as critical components in life-support devices or systems. Active-Semi, Inc. does not assume any liability arising out of the use of any product or circuit described in this datasheet, nor does it convey any patent license. Active-Semi and its logo are trademarks of Active-Semi, Inc. For more information on this and other products, contact [email protected] or visit http://www.active-semi.com. is a registered trademark of Active-Semi. Innovative PowerTM - 13 - Active-Semi Proprietary―For Authorized Recipients and Customers ActiveQRTM is a trademark of Active-Semi. www.active-semi.com Copyright © 2014 Active-Semi, Inc.