Power management (dual transistors) VT6T12 (5) (4) 0 ~ 0.05 0.14 (1) (2) (3) 0.16 ± 0.05 0.13 ± 0.05 0.4 0.4 0.2 ± 0.1 1.2 ± 0.1 zFeatures 1) Very small package with two transistors. 2) Suitable for current mirror circuits. 0.5 ± 0.1 1.2 ± 0.1 (6) 0.92 ± 0.1 0.14 VMT6 0.2 ± 0.1 zDimensions (Unit : mm) zStructure PNP silicon epitaxial planar transistor 0.8 ± 0.1 zApplications Current mirror circuits Abbreviated symbol : T12 UNIT : mm Each lead has same dimensions. zPackaging specifications Package Type zinner circuit Taping Code T2R Basic ordering unit (pieces) 8000 (6) (5) (4) Tr2 VT6T12 Tr1 zAbsolute maximum ratings (Ta=25°C) (1) Symbol Limits Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V IC Parameter Collector current ICP Total Power dissipation Element Junction temperature Range of storage temperature PD −100 mA ∗1 −200 mA ∗2 150 mW 120 mW 150 −55 to +150 °C Tj Tstg (2) (3) (1) Base (2) Emitter (3) Emitter (4) Collector (5) Collector (5) Base (6) Collector (6) Base (Tr1) (Tr1) (Tr2) (Tr2) (Tr1) (Tr2) (Tr1) (Tr2) °C ∗1 Pw=1mS Single pulse ∗2 Each terminal mounted on a recommended land zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit BVCEO BVCBO −50 −50 − − BVEBO −5 − − ICBO VCE(sat) hFE − − − 120 − − −0.1 V V DC current gain ratio hFE (Tr1) / hFE (Tr2) 0.9 Transition frequency Output capacitance fT − Cob − Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ IEBO − − V IE= −50µA µA µA V − VCB= −50V VEB= −5V IC= −50mA, IB= −5mA VCE= −6V, IC= −1mA − MHz VCE= −6V, IC= −1mA − − pF −0.1 −0.15 − −0.40 560 − 300 2 1.1 1/2 Conditions IC= −1mA IC= −50µA VCE= −10V, IE=10mA, f=100MHz VCB= −10V, IE=0A, f=1MHz 2009.09 - Rev.A VT6T12 Data Sheet zElectrical characteristics curves IB=450uA IB=400uA IB=350uA IB=300uA -50 VCE =2V Ta=125 C 25 C -55 C -10 -1 -0.1 -40 IB=200uA -30 IB=150uA -20 IB=100uA -10 IB=50uA -0.6 -0.8 -1 0 -1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) IC/IB = 20/1 IC/IB = 10/1 -0.1 -2 -3 -4 IB=0uA -1 -10 -100 COLLECTOR CURRENT : IC (mA) 10 -0.1 -5 IC/IB = 10/1 Ta=125 C 25 C -55 C -0.1 -0.01 -0.01 Ta=125 C 25 C -55 C -1 -10 -100 COLLECTOR CURRENT : IC (mA) -1 -10 -100 COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) -1 Ta=25 C -1 TRANSITION FREQUENCY :fT (MHz) -0.4 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta=25 C 0 -0.2 VCE=5V 100 -0.01 0 1000 IB=250uA DC CURENT GAIN : hFE -100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) IB=500uA 1000 VCE = 10V Ta = 25 C 100 10 -0.1 -1 -10 -100 -1000 EMITTER CURRENT ：IE (mA) 100 Cib Cob (pF) Cib (pF) 10 Cob 1 0.1 Ta=25 C f=1MHz IE=0 IC=0 -0.01 -0.1 -1 -10 -100 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB(V) www.rohm.com c 2009 ROHM Co., Ltd. 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