Midium Power Transistors (50V / 3A) 2SCR533D Structure NPN Silicon epitaxial planar transistor Dimensions (Unit : mm) CPT3 6.5 5.1 (SC-63) <SOT-428> 2.3 0.5 (1) Base (2) Collector (3) Emitter Packaging specifications 9.5 0.8Min. 0.75 Applications Driver Package Code Basic ordering unit (pieces) 2.5 0.9 2) High speed switching Type 1.5 5.5 1.5 Features 1) Low saturation voltage V CE (sat) = 0.35V (Max.) (I C / I B= 1A / 50mA) 0.65 0.9 2.3 (1) (2) (3) 2.3 0.5 1.0 Inner circuit (Unit : mm) CPT3 TL 2500 (2) (1) Absolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage VCBO Collector-emitter voltage Emitter-base voltage VCEO VEBO Collector current DC Pulsed Power dissipation Junction temperature Range of storage temperature Limits Unit 50 50 V V 6 3 IC ICP *1 6 PD *2 1 *3 PD 10 150 Tj Tstg -55 to 150 (1) Base (2) Collector (3) Emitter (3) V A A W W °C °C *1 Pw=10ms, Single Pulse *2 Mounted on a substrate *3 TC=25°C www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.12 - Rev.A 2SCR533D Data Sheet Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage BVCEO 50 - - V IC= 1mA Collector-base breakdown voltage BVCBO 50 - - V IC= 100μA Emitter-base breakdown voltage BVEBO 6 - - V IE= 100μA Collector cut-off current ICBO - - 1 μA VCB= 50V Emitter cut-off current IEBO - - 1 μA VEB= 4V *1 VCE(sat) - 130 350 hFE 180 - 450 Collector-emitter staturation voltage DC current gain Transition frequency f T *1 - 320 - mV IC= 1A, IB= 50mA - Collector output capacitance Cob - 13 - pF Turn-on time ton *2 - 50 - ns Storage time tstg *2 - 450 - ns t f *2 - 80 - ns Fall time VCE= 3V, IC= 50mA VCE= 10V MHz IE=-500mA, f=100MHz VCB= 10V, IE=0A f=1MHz IC= 1.5A, I B1= 150mA, _ 10V IB2=-150mA, V CC ~ *1 Pulsed *2 See switching time test circuit www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/5 2010.12 - Rev.A 2SCR533D Data Sheet Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics 5.0mA 3.0mA Fig.2 DC Current Gain vs. Collector Current ( I ) 2.5mA 1000 0.50 Ta=25°C 2.0mA 1.5mA DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC[A] 0.40 0.30 1.0mA 0.20 VCE=5V 3V 100 0.5mA 0.10 Ta=25°C 0.00 10 0 0.5 1 1.5 2 1 10 Fig3. DC Current Gain vs. Collector Current ( II ) 10000 Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( I ) 1 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat)[V] VCE=3V DC CURRENT GAIN : hFE 1000 COLLECTOR CURRENT : IC[mA] COLECTOR TO EMITTER VOLTAGE :VCE[V] 100 Ta=125°C 75°C 25°C -40°C Ta=25°C 0.1 0.01 IC/IB=50 20 10 0.001 10 1 10 100 1000 1 10000 10 COLLECTOR CURRENT : IC[mA] 100 1000 10000 COLLECTOR CURRENT : IC[mA] Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( II ) Fig.6 Ground Emitter Propagation Characteristics 10000 1 VCE=3V COLLECTOR CURRENT : IC[mA] IC/IB=20 COLLECTOR SATURATION VOLTAGE : VCE(sat)[V] 100 0.1 0.01 Ta=125°C 75°C 1000 Ta=125°C 75°C 25°C 100 -40°C 10 25°C -40°C 0.001 1 1 10 100 1000 0 10000 0.4 0.6 0.8 1 1.2 1.4 BASE TO EMITTER VOLTAGE : VBE[V] COLLECTOR CURRENT : IC[mA] www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 0.2 3/5 2010.12 - Rev.A 2SCR533D Data Sheet Fig.7 Emitter Input Capacitance vs. Emitter-Base Voltage Collector Output Capacitance vs. Collector-Base Voltage Fig.8 Gain Bandwidth Product vs. Emitter Current 1000 Ta=25°C VCE=10V Ta=25°C f=1MHz IE=0A IC=0A Cib TRANSITION FREQUENCY : fT[MHz] COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib(pF) 1000 100 10 Cob 100 10 1 0.1 1 10 100 10 COLLECTOR - BASE VOLTAGE : VCB (V) EMITTER - BASE VOLTAGE : VEB (V) 100 1000 EMITTER CURRENT : IE[mA] Fig.9 Safe Operating Area 10 COLLECTOR CURRENT : I C[A] Pw=1ms Pw=10ms 1 Ta=25°C DC(Mounted on a substrate) 0.1 Tc=25°C DC Tc=25°C Single non repetitive pulse 0.01 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE : VCE[V] www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 4/5 2010.12 - Rev.A 2SCR533D Data Sheet Switching time test circuit RL=6.8Ω VIN I B1 IC _ 10V VCC~ IB2 _ 50μs Pw ~ Pw DUTY CYCLE≦1% I B1 BASE CURENT WAVEFORM I B2 ton tstg tf 90% IC COLLECTOR CURRENT WAVEFORM 10% www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 5/5 2010.12 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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