EMD6 / UMD6N / IMD6A NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet <For DTr1(NPN)> lOutline Parameter Value VCEO IC R1 50V 100mA 4.7kW EMT6 (1) (2) (5) (4) (3) (4) Value (3) -50V -100mA 4.7kW (2) (6) (1) SMT6 Parameter UMT6 (5) (2) (5) (4) (3) UMD6N SOT-353 (SC-88) EMD6 (SC-107C) <For DTr2(PNP)> VCEO IC R1 (6) (6) (1) IMD6A SOT-457 (SC-74) lFeatures lInner circuit 1) Both the DTC143T chip and DTA143T chip in one package. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Lead Free/RoHS Compliant. Collector (6) Base (5) Emitter (4) DTr1 DTr2 (1) Emitter (2) Base (3) Collector EMD6 / UMD6N Collector (4) Base (5) Emitter (6) DTr2 DTr1 lApplication Inverter circuit, Interface circuit, Driver circuit (3) Emitter (2) Base (1) Collector IMD6A lPackaging specifications Package Package size (mm) Taping code EMD6 EMT6 1616 T2R 180 8 8,000 D6 UMD6N UMT6 2021 TR 180 8 3,000 D6 IMD6A SMT6 2928 T108 180 8 3,000 D6 Part No. www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1/7 Basic Reel size Tape width ordering (mm) (mm) unit (pcs) Marking 2013.05 - Rev.B Data Sheet EMD6 / UMD6N / IMD6A lAbsolute maximum ratings (Ta = 25C) Parameter Symbol DTr1(NPN) DTr2(PNP) Unit Collector-base voltage VCBO 50 -50 V Collector-emitter voltage VCEO 50 -50 V Emitter-base voltage VEBO 5 -5 V IC 100 Collector current Collector Power dissipation EMD6 / UMD6N -100 mA *3 mW 300 (Total)*4 mW Tj 150 °C Tstg -55 to +150 °C 150 (Total) PC *2 IMD6A Junction temperature Range of storage temperature lElectrical characteristics(Ta = 25°C) <For DTr1(NPN)> Parameter Conditions Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO IC= 50mA 50 - - Collector-emitter breakdown voltage BVCEO IC= 1mA 50 - - Emitter-base breakdown voltage BVEBO IE= 50mA 5 - - Collector cut-off current ICBO VCB = 50V - - 500 nA Emitter cut-off current IEBO VEB = 4V - - 500 nA IC / IB= 5mA / 0.25mA - - 300 mV 100 300 600 - Collector-emitter saturation voltage VCE(sat) VCE= 5V, IC= 1mA V DC current gain hFE Input resistance R1 - 3.29 4.7 6.11 - Transition frequency fT *1 VCE = 10V, IE = -5mA f = 100MHz - 250 - MHz Min. Typ. Max. Unit lElectrical characteristics(Ta = 25°C) <For DTr2(PNP)> Parameter Conditions Symbol Collector-base breakdown voltage BVCBO IC= -50mA -50 - - Collector-emitter breakdown voltage BVCEO IC= -1mA -50 - - Emitter-base breakdown voltage BVEBO IE= -50mA -5 - - Collector cut-off current ICBO VCB = -50V - - -500 nA Emitter cut-off current IEBO VEB = -4V - - -500 nA VCE(sat) IC / IB= -5mA / -0.25mA - - -300 mV DC current gain hFE VCE= -5V, IC= -1mA 100 300 600 - Input resistance R1 - 3.29 4.7 6.11 - Transition frequency fT *1 VCE = -10V, IE = 5mA f = 100MHz - 250 - MHz Collector-emitter saturation voltage V *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 2/7 2013.05 - Rev.B Data Sheet EMD6 / UMD6N / IMD6A lElectrical characteristic curves(Ta = 25°C) <For DTr1(NPN)> Fig.2 Grounded emitter output characteristics Fig.1 Grounded emitter propagation characteristics 100 10 Ta=25ºC COLLECTOR CURRENT : IC [mA] COLLECTOR CURRENT : IC [mA] VCE=5V 1 0.1 Ta=100ºC 25ºC -40ºC 0.01 0.001 0 0.5 1 1.5 2 IB= 500μA 450μA 400μA 80 350μA 300μA 60 250μA 200μA 40 150μA 100μA 20 0 50μA 0A 0 5 10 COLLECTOR TO EMITTER VOLTAGE : VCE [V] BASE TO EMITTER VOLTAGE : VBE [V] Fig.4 Collector-emitter saturation voltage vs. Collector Current DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) [V] Fig.3 DC Current gain vs. Collector Current COLLECTOR CURRENT : IC [A] COLLECTOR CURRENT : IC [A] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 3/7 2013.05 - Rev.B Data Sheet EMD6 / UMD6N / IMD6A lElectrical characteristic curves(Ta = 25°C) <For DTr2(PNP)> Fig.2 Grounded emitter output characteristics Fig.1 Grounded emitter propagation characteristics -10 -100 COLLECTOR CURRENT : IC [mA] COLLECTOR CURRENT : IC [mA] VCE= -5V -1 -0.1 Ta=100ºC 25ºC -40ºC -0.01 -0.001 0 -0.5 -1 -1.5 -2 IB= Ta=25ºC -500μA -450μA -80 -400μA -350μA -300μA -60 -250μA -200μA -40 -150μA -100μA -20 -50μA 0 0 -2 -4 -6 -8 0A -10 COLLECTOR TO EMITTER VOLTAGE : VCE [V] BASE TO EMITTER VOLTAGE : VBE [V] Fig.4 Collector-emitter saturation voltage vs. Collector Current DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) [V] Fig.3 DC Current gain vs. Collector Current COLLECTOR CURRENT : IC [A] COLLECTOR CURRENT : IC [A] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 4/7 2013.05 - Rev.B Data Sheet EMD6 / UMD6N / IMD6A lDimensions (Unit : mm) D b x c S A Lp Lp HE L E L EMT6 A A1 y S l1 A e1 e S b2 e Pattern of terminal position areas [Not a recommended pattern of soldering pads] DIM A A1 b c D E e HE L Lp x y DIM b2 e1 l1 MILIMETERS MIN MAX 0.45 0.55 0.00 0.10 0.17 0.27 0.08 0.18 1.50 1.70 1.10 1.30 0.50 1.50 1.70 0.10 0.30 0.35 0.10 0.10 INCHES MIN 0.018 0.000 0.007 0.003 0.059 0.043 MAX 0.022 0.004 0.011 0.007 0.067 0.051 0.020 0.059 0.004 - MILIMETERS MIN MAX 0.37 1.25 0.45 0.067 0.012 0.014 0.004 0.004 INCHES MIN - MAX 0.015 0.049 - 0.018 Dimension in mm / inches www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 5/7 2013.05 - Rev.B Data Sheet EMD6 / UMD6N / IMD6A lDimensions (Unit : mm) D A e c x Lp L1 A3 S A e e1 l1 y S A1 A b HE Q E UMT6 S b2 Pattern of terminal position areas [Not a recommended pattern of soldering pads] DIM A A1 A3 b c D E e HE L1 Lp Q x y DIM b2 e1 l1 MILIMETERS MIN MAX 0.80 1.00 0.00 0.10 0.25 0.15 0.30 0.10 0.20 1.90 2.10 1.15 1.35 0.65 2.00 2.20 0.20 0.50 0.25 0.55 0.10 0.30 0.10 0.10 INCHES MIN 0.031 0.000 MAX 0.039 0.004 0.010 0.006 0.004 0.075 0.045 0.012 0.008 0.083 0.053 0.026 0.079 0.008 0.010 0.004 - MILIMETERS MIN MAX 0.40 1.55 0.65 0.087 0.020 0.022 0.012 0.004 0.004 INCHES MIN - MAX 0.016 0.061 - 0.026 Dimension in mm / inches www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 6/7 2013.05 - Rev.B Data Sheet EMD6 / UMD6N / IMD6A lDimensions (Unit : mm) D A e SMT6 c L1 Lp HE E Q A3 b x S A l1 A e1 e A1 y S S b2 Pattern of terminal position areas [Not a recommended pattern of soldering pads] DIM A A1 A3 b c D E e HE L1 Lp Q x y DIM b2 e1 l1 MILIMETERS MIN MAX 1.00 1.30 0.00 0.10 0.25 0.25 0.40 0.09 0.25 2.80 3.00 1.50 1.80 0.95 2.60 3.00 0.30 0.60 0.40 0.70 0.20 0.30 0.20 0.10 INCHES MIN 0.039 0.000 MAX 0.051 0.004 0.010 0.010 0.004 0.110 0.059 0.016 0.010 0.118 0.071 0.037 0.102 0.012 0.016 0.008 - MILIMETERS MIN MAX 0.60 2.10 0.90 0.118 0.024 0.028 0.012 0.008 0.004 INCHES MIN - MAX 0.024 0.083 - 0.035 Dimension in mm / inches www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 7/7 2013.05 - Rev.B Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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