Data Sheet 1.5V Drive Pch MOSFET + PNP TRANSISTOR QS8F2 Structure Silicon P-channel MOSFET/ PNP TRANSISTOR Dimensions (Unit : mm) TSMT8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(1.5V drive). (1) (2) Abbreviated symbol : F02 Application Switching Packaging specifications Type (3) (4) Package Code Basic ordering unit (pieces) QS8F2 Inner circuit Taping TR 3000 (8) Absolute maximum ratings (Ta = 25C) <Tr1(Pch MOSFET)> Parameter Symbol Limits Drain-source voltage VDSS 12 V Gate-source voltage VGSS 10 V Continuous ID 2.5 A Pulsed Continuous Pulsed IDP* Is Isp* 10 1 10 A A A Symbol Limits Unit Collector-Emitter voltage VCEO 30 V Collector-Base voltage VCBO 30 V Emitter-Base voltage VEBO 6 V IC ICP* 2 4 A A Symbol Limits Unit Drain current Source current (Body Diode) Unit (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Emitter (4) Tr2 Base (5) Tr2 Collector (6) Tr2 Collector (7) Tr1 Drain (8) Tr1 Drain (7) (6) (5) (2) (3) (4) ∗2 ∗1 (1) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE * Pw10s, Duty cycle1% <Tr2(PNP Tr)> Parameter Collector current Continuous Pulsed * Pw1ms, Pulsed <MOSFET and Di> Parameter Power dissipation Junction temperature Range of storage temperature PD Tj Tstg * 1.5 W / TOTAL W / ELEMENT 1.25 150 C 55 to 150 C * Mounted on a ceramic board. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.04 - Rev.A Data Sheet QS8F2 Electrical characteristics (Ta = 25C) <Tr1(Pch MOSFET)> Parameter Symbol Min. Typ. Max. Unit IGSS - - 10 A VGS=10V, VDS=0V V (BR)DSS 12 Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) 0.3 Conditions - - V ID=1mA, VGS=0V - 1 A VDS=12V, VGS=0V - 1.0 V VDS=6V, ID=1mA - 44 61 ID=2.5A, VGS=4.5V - 60 84 ID=1.2A, VGS=2.5V - 81 121 - 110 220 l Yfs l* 3.5 - - S VDS=6V, ID=2.5A Input capacitance Ciss - 1350 - pF VDS=6V Output capacitance Coss - 130 - pF VGS=0V Reverse transfer capacitance Crss - 125 - pF f=1MHz Turn-on delay time td(on) * - 9 - ns ID=1.2A, VDD 6V tr * - 35 - ns VGS=4.5V td(off) * - 130 - ns RL=5 tf * - 85 - ns RG=10 Total gate charge Qg * - 13 - nC ID=2.5A, Gate-source charge Gate-drain charge Qgs * Qgd * - 2.5 2.0 - nC nC VDD 6V VGS=4.5V Static drain-source on-state resistance RDS (on)* Forward transfer admittance Rise time Turn-off delay time Fall time m ID=1.2A, VGS=1.8V ID=0.5A, VGS=1.5V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Conditions Symbol VSD * Min. Typ. Max. Unit - - 1.2 V Symbol Min. Typ. Max. Unit Collector-Emitter breakdown voltage BVCEO BVCBO Collector-Base breakdown voltage 30 - - V IC=1mA 30 - - V IC=10μA BVEBO 6 - - V IE=10μA ICBO - - 100 nA VCB=30V IEBO * VCE(sat) - - 100 nA VEB=6V - 180 370 ｈFE 270 - 680 mV IC=1.5A , IB=75mA VCE=2V,IC=200mA - fT - 280 - MHz VCE=2V,IE=200mA, f=100MHｚ Cob - 20 - pF VCB=10V,IE=0mA, f=1MHz Parameter Forward Voltage Is=2.5A, VGS=0V *Pulsed <Tr2(PNP Tr)> Parameter Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current Collector-Emitter saturation voltage DC current gain Transistor frequency Collector output capacitance Conditions *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.04 - Rev.A Data Sheet QS8F2 Electrical characteristic curves (Ta=25C) 〈Tr.1〉 10 10 6 VGS= -1.6V 4 2 DRAIN CURRENT : -ID [A] 8 10 Ta=25℃ Pulsed VGS= -10V VGS= -4.5V VGS= -4.0V VGS= -2.5V VGS= -2.0V DRAIN CURRENT -ID[A] DRAIN CURRENT -ID[A] Ta=25℃ Pulsed 8 VGS= -1.8V VGS= -10V VGS= -4.5V VGS= -2.5V 6 4 VGS= -1.5V 2 VGS= -1.2V VDS= -6V Pulsed 1 Ta= 125°C Ta= 75℃ Ta= 25℃ Ta= - 25℃ 0.1 VGS= -1.2V 0.01 0 0 0.2 0.4 0.6 0.8 0 1.0 2 DRAIN-SOURCE VOLTAGE -VDS[V] 8 10 0.0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [mΩ] 100 . VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 10 1 100 Ta=125℃ Ta=75℃ Ta=25℃ Ta= -25℃ 10 0.1 1 DRAIN CURRENT : -ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 10 0.1 1 10 10 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) VGS= -1.5V Pulsed 100 Ta=125℃ Ta=75℃ Ta=25℃ Ta= -25℃ 10 0.1 1 DRAIN CURRENT : -ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 3/6 10 DRAIN CURRENT : -ID [A] REVERSE DRAIN CURRENT : -Is [A] Ta=125℃ Ta=75℃ Ta=25℃ Ta= -25℃ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Ta=125℃ Ta=75℃ Ta=25℃ Ta= -25℃ Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [mΩ] 100 1 DRAIN CURRENT : -ID [A] 100 10 1000 VGS= -1.8V Pulsed 0.1 VGS= -2.5V Pulsed DRAIN CURRENT : -ID [A] 1000 1.5 1000 VGS= -4.5V Pulsed 10 1.0 Fig.3 Typical Transfer Characteristics 1000 Ta=25℃ Pulsed 0.1 0.5 GATE-SOURCE VOLTAGE : -VGS [V] Fig.2 Typical Output Characteristics(Ⅱ) 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [mΩ] 6 DRAIN-SOURCE VOLTAGE -VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [mΩ] 4 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [mΩ] 0.0 10 10 VGS=0V Pulsed 1 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 0.1 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 2011.04 - Rev.A 200 VDS= -6V Pulsed 150 ID= -2.5A 100 GATE-SOURCE VOLTAGE : -VGS [V] 100 Ta=25℃ Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [mΩ] Data Sheet QS8F2 ID= -1.2A 50 10 0 Ta= -25℃ Ta=25℃ Ta=75℃ Ta=125℃ 1 5 0.1 10 Ta=25℃ VDD= -6V ID= -2.5A RG=10Ω Pulsed 4 3 2 1 0 0 0 5 1.0 DRAIN CURRENT : -ID [A] GATE-SOURCE VOLTAGE : -VGS [V] 10.0 2 4 6 8 10 12 14 TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics Fig.11 Forward Transfer Admittance vs. Drain Current Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 0 1000 10000 SWITCHING TIME : t [ns] CAPACITANCE : C [pF] td(off) 1000 Ciss Crss 100 Coss Ta=25℃ f=1MHz VGS=0V 10 0.01 0.1 1 10 tf 100 10 td(on) tr 1 0.01 100 0.1 1 10 DRAIN CURRENT : -ID [A] DRAIN-SOURCE VOLTAGE : -VDS [V] Fig.13 Typical Capacitance vs. Drain-Source Voltage NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) Ta=25℃ VDD= -6V VGS=-4.5V RG=10Ω Pulsed Fig.14 Switching Characteristics 10 1 0.1 Ta = 25℃ Single Pulse : 1Unit Rth（ch-a）（t） = ｒ（t）×Rth（ch-a） Rth（ch-a） = 62.5 ℃/W <Mounted on a SERAMIC board> 0.01 0.001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.04 - Rev.A QS8F2 Data Sheet 〈Tr.2〉 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.04 - Rev.A Data Sheet QS8F2 Measurement circuits Pulse Width VGS ID VDS VGS 10% 50% 90% RL 50% 10% D.U.T. 10% RG VDD VDS 90% td(on) tr ton 90% td(off) tf toff Fig.1-2 Switching Waveforms Fig.1-1 Switching Time Measurement Circuit VG VGS ID VDS RL IG(Const.) D.U.T. Qg VGS Qgs RG Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A