SST5911 - Calogic, LLC

N-Channel JFET
Monolithic Dual
LLC
SST5911 / SST5912
FEATURES
DESCRIPTION
APPLICATIONS
The SST5912 is a High Speed N-Channel Monolithic JFET
pair encapsulated in a surface mount plastic SO-8 package.
The device is designed for high gain (typically > 6000 µmhos),
low leakage ( < 1pA typically) and low noise, The SST5912 is
an excellent choice for differential wideband amplifiers,
VHF/UHF amplifiers and test and measurement.
• High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gfs > 6 mS
• Low Leakage . . . . . . . . . . . . . . . . . . . . . . IG < 1pA typical
Noise
• Low
• Surface Mount Package
• Differential Wideband Amplifier
• VHF/UHF Amplifiers
• Test and Measurement
ORDERING INFORMATION
Part
Package
Temperature Range
-55oC to +150oC
SST5912 Plastic SO-8 Package
NOTE: For Sorted Chips in Carriers, See 2N5911 Series
PIN CONFIGURATION
TOP VIEW
SO-8
(1) S1
N/C (8)
(2) D1
G2 (7)
(3) G1
D2 (6)
(4) N/C
S2 (5)
CJ1
PRODUCT MARKING
SST5912
SST5912
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
Parameter/Test Condition
Gate-Drain Voltage
Gate-Source Voltage
Forward Gate Current
Power Dissipation (per side)
(total)
Power Derating
(per side)
(total)
Operating Junction Temperature
Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
Symbol
Limit
Unit
VGD
VGS
IG
PD
-25
-25
50
300
500
2.4
4
-55 to 150
-65 to 150
300
V
V
mA
mW
mW
mW/ oC
mW/ oC
o
C
o
C
o
C
TJ
Tstg
TL
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX
DS071 REV A
SST5911 / SST5912
LLC
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
SYMBOL
CHARACTERISTCS
TYP1
SST5912
MIN
UNIT
MAX
TEST CONDITIONS
STATIC
Gate-Source Breakdown Voltage
-35
-25
VGS(OFF)
Gate-Source Cut off Voltage
-3.5
-1
-5
IDSS
Saturation Drain Current
15
7
40
mA
VDS = 10V, VGS = 0V
IGSS
Gate Reverse Current
-100
pA
VGS = -15V, VDS = 0V
nA
TA = 125 oC
IG
Gate Operating Current
pA
VDG = 10V, ID = 5mA
nA
TA = 125 oC
VGS
Gate-Source Voltage
-1.5
VGS(F)
Gate-Source Forward Voltage
0.7
V(BR)GSS
2
-1
-0.2
-1
-100
-0.2
-0.3
IG = -1µA, VDS = 0V
V
-4
VDS = 10V, ID = 1nA
VDG = 10V, ID = 5mA
V
IG = 1mA, VDS = 0V
DYNAMIC
gfs
Common-Source Forward Transconductance
6
gos
Common-Source Output Conductance
20
5
gfs
Common-Source Forward Transconductance
6
gos
Common-Source Output Conductance
30
Ciss
Common-Source Input Capacitance
3.5
5
Crss
Common-Source Reverse Transfer Capacitance
1
1.2
en
Equivalent Input Noise Voltage
4
20
NF
Noise Figure
0.1
1
5
10
mS
100
µS
10
mS
150
µS
pF
VDG = 10V, ID = 5mA
f = 1kHz
VDG = 10V, ID = 5mA
f = 100MHz
VDG = 10V, ID = 5mA
f = 1MHz
nV/ Hz VDG = 10V, ID = 5mA, f = 10kHz
dB
VDG = 10V, ID = 5mA, f = 10kHz, RG = 100Ω
ELECTRICAL CHARACTERISTICS (continued) (TA = 25oC unless otherwise noted)
SST5911
SYMBOL
SST5912
CHARACTERISTICS
UNITS
TEST CONDITIONS
MIN MAX MIN MAX
| IG1 - IG2 |
IDSS1
IDSS2
| VGS1 - VGS2 |
∆ | VGS1 - VGS2 |
∆T
gfs1
gfs2
Differential Gate Current
Saturation Drain Current Ratio
20
0.95
Differential Gate-Source Voltage
1
20
0.95
10
15
20
40
VDG = 10V, ID = 5mA
mV
µV/ oC VDG = 10V, ID = 5mA
20
0.95
1
0.95
TA = 125 oC
VDS = 10V, VGS = 0
(Pulsewidth 300µs, duty cycle ≤ 3%)
1
Gate Source Voltage Differential Drift
(Measured at end points, TA and TB)
Transconductance Ratio
nA
TA = 25oC
TB = 125 oC
40
TA = -55oC
TB = 25oC
1
f = 1kHz
NOTES: 1. For design aid only, not subject to production testing.
2. Pulse test; PW = 300µs, duty cycle ≤ 3%.
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX
DS071 REV A