High-Speed Analog N-Channel Enhancement-Mode DMOS FETS LLC SD200 / SD201 / SD202 / SD203 / SSTSD201 / SSTSD203 FEATURES • High gain . . . . . . . . . . . . . . . . . . . . . 8.0 dB min @ 1 GHz • Low Noise. . . . . . . . . . . . . . . . . . . . . 5.0 dB max @ 1 GHz (SD202, SD203, SSTSD203) Low Interelectrode Capacitances APPLICATIONS • High Gain VHF/UHF Amplifiers • Oscillators • Mixers DESCRIPTION The SD200 series is manufactured utilizing Calogic’s proprietary DMOS design and processing techniques. The device is designed to operate well through 1 GHz while maintaining excellent frequency response, power gain, and low noise. The DMOS structure is an inherently low capacitance and very high speed design resulting in a device that bridges JFETS and GaAs products in performance characteristics. ORDERING INFORMATION Part Package SD200DC SD201DC SD202DC SD203DC SSTSD201 SSTSD203 XSD200 XSD201 XSD202 XSD203 4 Lead TO-52 Package 4 Lead TO-52 Package 4 Lead TO-52 Package 4 Lead TO-52 Package Surface Mount SOT-143 Surface Mount SOT-143 Sorted Chips in Carriers Sorted Chips in Carriers Sorted Chips in Carriers Sorted Chips in Carriers PIN CONFIGURATION Temperature Range -55oC to +125oC -55oC to +125oC -55oC to +125oC -55oC to +125oC -55oC to +125oC -55oC to +125oC -55oC to +125oC -55oC to +125oC -55oC to +125oC -55oC to +125oC SCHEMATIC DIAGRAM (2) DRAIN (4) CASE, BODY CD10-1 CD10-2 SD201, SD203, zener protected SD202, SD204, non-zener (3) GATE CASE, B G D S (1) SOURCE GATE (3) DRAIN (2) BODY (4) SOT-143 PART MARKINGS (SOT-143) P/N MARKING SSTSD201 201 SSTSD203 203 BODY INTERNALLY CONNECTED TO CASE. DIODE PROTECTION ON SD201/SD203 ONLY. SOURCE (1) CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX DS054 REV A SD200 / SD201 / SD202 / SD203 / SSTSD201 / SSTSD203 LLC ABSOLUTE MAXIMUM RATING (TA = +25oC unless otherwise noted) PARAMETER Breakdown Voltages SD200 SD201 SD202 SD203 VDS VDB VGS +25 +25 ±40 VGB ±40 VGD ±40 +25 +25 -0.3 +20 -0.3 +20 -0.3 +20 +20 +20 ±40 ±40 ±40 UNIT +20 +20 -0.3 +20 -0.3 +20 -0.3 +20 Continuous Drain Current . . . . . . . . . . . . . . . . . . 50 mA Power Dissipation (at or below TC = +25oC) . . . . 1.8 W Linear Derating Factor . . . . . . . . . . . . . . . . . 18 mW/ oC Power Dissipation (at or below TA = +25C) . . . 360 mW Linear Derating Factor . . . . . . . . . . . . . . . . . 3.6 mW/ oC Operating Junction Temperature Range . . . . . . . . . . . . . . -55oC to + 125oC Storage Temperature Range . . . . . . . . -65oC to +175oC ID PT PD V V V V V V V V Tj Ts ELECTRICAL CHARACTERISTICS (TA = +25oC unless otherwise noted) 200, 201 SYMBOL 202, 203 PARAMETER UNIT MIN TYP 30 MAX MIN TYP 20 25 TEST CONDITIONS MAX STATIC BVDS Drain-Source Breakdown Voltage 25 BVDB Drain-Body Breakdown Voltage 25 ID(OFF) Drain-Source OFF Current IGBS 20 1.0 ID = 1.0µA, VGS = VBS = 0 V ID = 1.0µA, VGB = 0 Source OPEN µA 1.0 ±0.1 SD200 Gate-Body Leakage Current V SD201 nA 1.0 SD203 VGS(th) Gate Threshold Voltage rDS(ON) Drain-Source ON Resistance VGS = VBS = 0 VDS = 20 V ±0.1 SD202 VDS = 25 V VGV = ±40 V VDB = VSB = 0 µA VGB = 20 V 1.0 0.1 1.0 2.0 40 70 0.1 1.0 2.0 V VDS = VGS, ID = 1µA, VSB = 0 35 50 ohms VGS = 5 V, ID = 1 mA, VSB = 0 DYNAMIC gfs Common-Source Forward Transcondconductance ciss Common-Source Input Capacitance 2.4 3.0 3.0 3.6 coss Common-Source Output Capacitance 1.0 1.2 1.0 1.2 crss Common-Source Reverse Transfer Capacitance 0.2 0.3 0.2 0.3 Gps Common-Source Power Gain 13 14 17 20 mS ID = 20 mA, VDS = 15 V f = 1 KHz, VSB = 0 ID = 20 mA pF VGS = 0 8.0 10 8.0 10 dB NF Noise Figure 4.5 Pi Intercept Point 29 6.0 4.0 29 5.0 dBm ∆f = 2 MHz CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX VDS = 15 V f = 1 MHz VSB = 0 VDS = 15 V f = 1 GHz ID = 20 mA VSB = 0 DS054 REV A