N-Channel Depletion Mode Lateral DMOS FET LLC SD2100 / SST2100 FEATURES • Fast Switching . . . . . . . . . . . . . . . . . . . . . . . . . tON 1.0ns • Low Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . crss 2pf • Low RON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50Ω DESCRIPTION The SD2100/SST2100 is a depletion mode DMOS lateral FET that provides ultra high speed switching with very low capacitance. The product is available in TO-72 and surface mount SOT-143. APPLICATIONS Switches • Analog • Amplifiers ORDERING INFORMATION Part Package Temperature Range SD2100 SST2100 XSD2100 TO-72 -55oC to +125oC SOT-143 -55oC to +125oC Sorted Chips in Carriers -55oC to +125oC CONNECTION DIAGRAMS 3 TO-72 2 1 2 3 4 4 SOURCE DRAIN GATE SUBSTRATE 3 2 4 1 1 4 3 BOTTOM VIEW 1 2 DRAIN (2) BODY (4) SOURCE 1 4 2 3 BODY AND CASE GATE (3) DRAIN GATE SOURCE (1) BODY IS INTERNALLY CONNECTED TO THE CASE (TOP VIEW) PART MARKING (SOT-231) CD1-2 SST2100 D10 CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX DS055 REV A SD2100 / SST2100 LLC ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) SYMBOL PARAMETERS/TEST CONDITIONS LIMITS UNITS VGS Gate-Source Voltage ±25 VDS Drain-Source Voltage 25 ID Drain Current 50 mA PD Power Dissipation 300 mW Power Derating 2.4 mW/oC TJ Operating Junction Temperature -55 to 150 Tstg Storage Temperature -55 to 150 TL Lead Temperature (1/16" from case for 10 sec.) V o C 300 ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted) SYMBOL PARAMETER TYP1 MIN 25 15 MAX UNIT TEST CONDITIONS STATIC V(BR)DS Drain-Source Breakdown Voltage IGSS Gate Reverse Current IDSS Saturation Drain Current VGS(OFF ) Gate-Source Cutoff VGS Gate-Source Voltage rDS(ON) ±0.05 7 0.5 -1.5 V VGS = VBS = -5V, ID = 1µA ±1 nA VGS = ±25V, VDS = VBS = 0V 10 mA VDS = 10V, VGS = VBS = 0V -2 -0.3 -1 1 0.4 0 1.5 120 200 40 50 Drain-Source On-Resistance VDS = 10V, ID = 1µA, VBS = 0V V Ω VDG = 10V VBS = 0V ID = 100µA VBS = 0V ID = 5mA ID = 10mA VGS = 0V VGS = 5V DYNAMIC gfs Forward Transconductance 8000 gos Output Conductance 250 gfs Forward Transconductance gos Output Conductance Ciss Crss 1000 VDS = 10V, VGS = VBS = 0V, f = 1kHz 10000 500 µS 7000 VDG = 10V, VBS = 0V, ID = 10mA, f = 1kHz 350 500 Common-Source Input Capacitance 5 6 Reverse Transfer Capacitance 1 2 pF VDS = 10V, f = 1MHz, VGS = VBS = -5V ns VDD = 5V, RL = 680Ω, VIN = -4V to -2V SWITCHING td(ON) 0.7 Turn-ON Time tr tOFF 0.4 Turn-OFF Time 5 Note1: For design aid only, not subject to production testing. CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX DS055 REV A