ROHM QSH29

QSH29
Transistors
Dual digital transistors
QSH29
zFeatures
In addition to the standard features of digital transistor,
this transisitor has:
1) Low collector saturation voltage, typically
VCE (sat) =100mV for IC / IB=100mA / 1mA(Typ.)
2) High current gain, minimum
hFE=500mA for VCE=5V, IC=200mA.
3) Built in Zener diode for protection against surges when
connected to inductive load.
zDimensions (Unit : mm)
TSMT6
Abbreviated symbol : H29
zStructure
NPN silicon epitaxial planar transistor
zApplications
Driver
zEquivalent circuit
zPackaging specifications and hFE
Type
Package
TSMT6
Packaging type
Taping
(6)
Di
3000
Basic ordering unit (pieces)
R=10kΩ
R
TR
Code
(4)
(5)
DTr1
DTr2
Di
QSH29
R
(1)
(2)
(3)
(1) : Emitter
(2) : Base
(3) : Collector
(4) : Emitter
(5) : Base
(6) : Collector
(DTr1)
(DTr1)
(DTr2)
(DTr2)
(DTr2)
(DTr1)
zAbsolute maximum ratings (Ta=25°C)
<< DTr1>> << DTr2>>
Parameter
Symbol
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
Continuous
IC
Collector current
Pulsed
ICP
Power dissipation
Junction temperature
Range of storage temperature
PD
Tj
Tstg
Unit
Limits
V
60±10
V
60±10
5
V
500
mA
∗1
1
A
1.25
W/TOTAL ∗2
0.9
W/1 ELEMENT ∗2
150
°C
−55 to +150
°C
∗1 Pw=10ms 1 Pulse
∗2 Each terminal mounted on a ceramic board
1/3
QSH29
Transistor
zElectrical characteristics (Ta=25°C)
<< DTr1>> << DTr2>>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-emitter breakdown voltage BVCEO
50
−
70
V IC=50µA
BVCBO
Collector-base breakdown voltage
50
−
70
V IC=50µA
BVEBO 5.0
Emitter-base breakdown voltage
−
−
V IE=720µA
ICBO
Collector cut-off current
−
−
0.5
µA VCB=40V
IEBO
Emitter cut-off current
300
−
580 µA VEB=4V
100 300 mV IC=100mA, IB=1mA
Collector-emitter saturation voltage VCE (sat)
−
hFE
VCE=5V, IC=200mA
DC current gain
500
−
−
−
−
R
Emitter-base resistance
7
10
13
kΩ
2/3
QSH29
Transistor
zElectrical characterristic curves
125˚C
25˚C
−40˚C
0.1
0.01
1
IB=400uA
300
IB=300uA
IB=200uA
200
100
COLLECTOR SATURATION VOLTAGE
: VCE(sat) (V)
COLLECTOR SATURATION VOLTAGE
: VCE(sat) (V)
0.1
0.1
3
4
5
10
Ic/Ib=200/1
Ic/Ib=150/1
Ic/Ib=100/1
0.01
0.01
2
6
7
8
9
10
1
0.001
10
1
COLLECTOR CURRENT : IC (A)
1
Ic/Ib=100/1
125°C
25°C
−40°C
0.1
0.01
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.4 Collector-Emitter Saturation
Voltage vs. Collector Current ( )
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current ( )
−40°C
25°C
125°C
100
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.3 DC Current Gain vs.
Collector Current
Fig.2 Typical Output Characteristics
Ta=25˚C
1
1
1000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded Emitter Propagation
Characteristics
10
IB=100uA
0
0
VCE=5V
IB=500uA
400
10
BASE TO EMITTER VOLTAGE : VBE (V)
10000
IB=600uA
BASE EMITTER SATURATION VOLTAGE
: VBE(sat) (V)
0.001
0.1
Ta=25˚C
DC CURRENT GAIN : hFE
500
VCE=2V
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (A)
1
10
1
0.1
0.001
Ic/Ib=10/1
−40˚C
25˚C
125˚C
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.6 Base-emitter Saturation
Voltage vs. Collector Current
COLLECTOR CURRENT : IC (A)
10
Ta=25˚C
Pulsed
1ms
1
DC (Ta=25˚C)
0.1
10ms
100ms
0.01
0.001
0.1
1
10
100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.7 Safe Operating Area
3/3
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
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Appendix1-Rev2.0