SF11G - SF19G : GLASS PASSIVATED JUNCTION SUPER

TH09/2479
TH97/2478
www.eicsemi.com
SF11G - SF19G
IATF 0113686
SGS TH07/1033
GLASS PASSIVATED JUNCTION
SUPER FAST RECTIFIER DIODES
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
DO - 41
FEATURES :
*
*
*
*
*
*
*
Glass passivated chip
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Super fast recovery time
1.00 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
0.205 (5.2)
0.166 (4.2)
* Pb / RoHS Free
MECHANICAL DATA :
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL SF11G SF12G SF13G SF14G SF15G SF16G SF17G SF18G SF19G UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
150
200
300
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
105
140
210
280
420
560
700
V
VDC
50
100
150
200
300
400
600
800
1000
V
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 55 °C
IF(AV)
1.0
A
IFSM
30
A
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
0.95
1.7
4.0
V
10
µA
Maximum Peak Forward Voltage at IF = 1.0 A.
VF
Maximum DC Reverse Current
at Rated DC Blocking Voltage
IR
Maximum Reverse Recovery Time ( Note 1 )
Trr
Typical Junction Capacitance ( Note 2 )
CJ
50
pf
Junction Temperature Range
TJ
- 65 to + 150
°C
Storage Temperature Range
TSTG
- 65 to + 150
°C
5.0
35
ns
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
Rev. 02 : March 25, 2005
TH09/2479
TH97/2478
www.eicsemi.com
IATF 0113686
SGS TH07/1033
RATING AND CHARACTERISTIC CURVES ( SF11G - SF19G )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 Ω
10 Ω
Trr
+ 0.5 A
D.U.T.
+
0
PULSE
GENERATOR
( NOTE 2 )
50 Vdc
(approx)
1Ω
- 0.25 A
OSCILLOSCOPE
( NOTE 1 )
- 1.0 A
SET TIME BASE FOR 15 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
1 cm
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
30
1.0
PEAK FORWARD SURGE
CURRENT, AMPERES
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
0.8
0.6
0.4
0.2
8.3 ms SINGLE HALF SINE
Ta = 50 °C
24
18
12
6.0
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0
25
50
75
100
125
150
0
175
1
AMBIENT TEMPERATURE, ( °C)
4
6
10
20
40
60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
10
100
SF15G - SF17G
TJ = 100 °C
REVERSE CURRENT,
MICROAMPERES
SF11G- SF14G
FORWARD CURRENT, AMPERES
2
10
SF18G - SF19G
1.0
0.1
1.0
0.1
TJ = 25 °C
0.01
Pulse Width = 300 µs
2% Duty Cycle
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
TJ = 25 °C
0.01
0
0.8
1.6
2.4
3.2
4.0
4.8
5.6
6.4
7.2
8.0
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : March 25, 2005