TH09/2479 TH97/2478 www.eicsemi.com 1N5711 and 1N6263 IATF 0113686 SGS TH07/1033 SCHOTTKY BARRIER DIODES DO - 35 Glass (DO-204AH) VRRM : 70V , 60V FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. • This diode is also available in the MiniMELF case with type designation LL5711 and LL6263. • Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. Cathode Mark 1.00 (25.4) min. 0.020 (0.52)max. MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified. Parameter Symbol 1N5711 Repetitive Peak Reverse Voltage 1N6263 Value Unit 70 VRRM V 60 400(1) Power Dissipation (Infinite Heatsink) PD Maximum Single Cycle Surge 10 µs Square Wave IFSM 2 A Thermal Resistance Junction to Ambient Air RθJA 0.3(1) °C/mW Junction Temperature TJ 125(1) Storage temperature range TS -55 to + 150 mW °C °C (1) Electrical Characteristics (TJ = 25°C unless otherwise noted) Parameter Reverse Breakdown Voltage Symbol 1N5711 1N6263 V(BR)R Reverse Current IR Forward Voltage Drop VF Diode Capacitance Reverse Recovery Time 1N5711 1N6263 Test Condition IR = 10 µA VR = 50 V IF = 1mA IF = 15mA Cd VR = 0 V, f = 1MHz Trr IF = IR = 5mA, recover to 0.1IR Typ Max 70 60 - Min - 200 0.41 1.0 2.0 2.2 - - 1 Unit V nA V pF ns Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.. Page 1 of 2 Rev. 02 : March 24, 2005 TH09/2479 TH97/2478 www.eicsemi.com IATF 0113686 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( 1N5711 and 1N6263 ) Typical variation of forward current and forward voltage for primary conduction through the schottky barrier Typical forward conduction curve of combination schottky barrier and PN junction guard ring 10 100 Forward Current , IF (mA) Forward Current , IF (mA) 5 2 1 0.5 0.2 0.1 0.05 80 60 40 20 0.02 0.01 0 0 0.5 1 0 0.5 Forward Voltage , VF (V) Typical capacitance curve as a function of reverse voltage Typical variation of reverse current at various temperatures 100 2 50 Tj = 25°C Reverse Current , IR (µA) 20 Capacitance , Cd (pF) 1 Forward Voltage , VF (V) 1 Ta = 125°C 10 5 2 1 0.5 0.2 Ta = 25°C 0.1 0.05 0.02 0.01 0 0 10 20 30 40 Reverse Voltage , VR (V) Page 2 of 2 50 0 10 20 30 40 50 Reverse Voltage , VR (V) Rev. 02 : March 24, 2005